JPH0281484A - Gallium nitride-based compound semiconductor light-emitting element - Google Patents

Gallium nitride-based compound semiconductor light-emitting element

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Publication number
JPH0281484A
JPH0281484A JP23288788A JP23288788A JPH0281484A JP H0281484 A JPH0281484 A JP H0281484A JP 23288788 A JP23288788 A JP 23288788A JP 23288788 A JP23288788 A JP 23288788A JP H0281484 A JPH0281484 A JP H0281484A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
layer
formed
type gan
method
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23288788A
Inventor
Isamu Akasaki
Hiroshi Amano
Akira Mabuchi
Katsuhide Manabe
Michinari Sasa
Original Assignee
Res Dev Corp Of Japan
Toyoda Gosei Co Ltd
Univ Nagoya
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

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Abstract

PURPOSE: To obtain a thick N-layer whose crystal property is good by a method wherein an AlN buffer layer is formed on a sapphire substrate and an N-layer composed of an N-type GaN-based compound semiconductor is formed on it by a halide vapor growth method.
CONSTITUTION: A sapphire substrate 2 is attached to a susceptor of an MOVPE apparatus; an AlN buffer layer 3 is formed; after that, an N-type GaN layer 4 is formed at a growth speed of about 1μm/min by using a halide vapor growth apparatus. Then, a second N-type layer 8 of N-type GaN and an I-type GaN layer 5 are formed by an MOVPE method; electrodes 6, 7 are evaporated; a light-emitting diode is completed. When the second N-layer 8 which has been grown precisely by the MOVPE method is formed on the first N-layer 4, a crystallinity of the I-layer 5 can be made much better.
COPYRIGHT: (C)1990,JPO&Japio
JP23288788A 1988-09-16 1988-09-16 Gallium nitride-based compound semiconductor light-emitting element Pending JPH0281484A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23288788A JPH0281484A (en) 1988-09-16 1988-09-16 Gallium nitride-based compound semiconductor light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23288788A JPH0281484A (en) 1988-09-16 1988-09-16 Gallium nitride-based compound semiconductor light-emitting element

Publications (1)

Publication Number Publication Date
JPH0281484A true true JPH0281484A (en) 1990-03-22

Family

ID=16946397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23288788A Pending JPH0281484A (en) 1988-09-16 1988-09-16 Gallium nitride-based compound semiconductor light-emitting element

Country Status (1)

Country Link
JP (1) JPH0281484A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5192987A (en) * 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
US5278433A (en) * 1990-02-28 1994-01-11 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
US5408120A (en) * 1992-07-23 1995-04-18 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
US5729029A (en) * 1996-09-06 1998-03-17 Hewlett-Packard Company Maximizing electrical doping while reducing material cracking in III-V nitride semiconductor devices
US5733796A (en) * 1990-02-28 1998-03-31 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6489636B1 (en) 2001-03-29 2002-12-03 Lumileds Lighting U.S., Llc Indium gallium nitride smoothing structures for III-nitride devices
JP2002542624A (en) * 1999-04-16 2002-12-10 シービーエル テクノロジーズ インコーポレイテッド Semiconductor hetero structure and a manufacturing method according to the two-step process
US6635904B2 (en) 2001-03-29 2003-10-21 Lumileds Lighting U.S., Llc Indium gallium nitride smoothing structures for III-nitride devices
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US7772599B2 (en) 2004-05-27 2010-08-10 Showa Denko K.K. Gallium nitride-based semiconductor stacked structure, production method thereof, and compound semiconductor and light-emitting device each using the stacked structure
US7829913B2 (en) 2002-06-28 2010-11-09 Hitachi Cable, Ltd. Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6472689B1 (en) 1990-02-28 2002-10-29 Toyoda Gosei Co., Ltd. Light emitting device
US5278433A (en) * 1990-02-28 1994-01-11 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
US6593599B1 (en) 1990-02-28 2003-07-15 Japan Science And Technology Corporation Light-emitting semiconductor device using gallium nitride group compound
US6984536B2 (en) 1990-02-28 2006-01-10 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US5733796A (en) * 1990-02-28 1998-03-31 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6607595B1 (en) 1990-02-28 2003-08-19 Toyoda Gosei Co., Ltd. Method for producing a light-emitting semiconductor device
US6249012B1 (en) 1990-02-28 2001-06-19 Toyoda Gosei Co., Ltd. Light emitting semiconductor device using gallium nitride group compound
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
US6472690B1 (en) 1990-02-28 2002-10-29 Toyoda Gosei Co., Ltd. Gallium nitride group compound semiconductor
US5296395A (en) * 1991-05-17 1994-03-22 Apa Optics, Inc. Method of making a high electron mobility transistor
US5192987A (en) * 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
US5408120A (en) * 1992-07-23 1995-04-18 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
USRE36747E (en) * 1992-07-23 2000-06-27 Toyoda Gosei Co., Ltd Light-emitting device of gallium nitride compound semiconductor
GB2317053B (en) * 1996-09-06 2001-08-15 Hewlett Packard Co Doped semiconductor devices
US5729029A (en) * 1996-09-06 1998-03-17 Hewlett-Packard Company Maximizing electrical doping while reducing material cracking in III-V nitride semiconductor devices
JP2002542624A (en) * 1999-04-16 2002-12-10 シービーエル テクノロジーズ インコーポレイテッド Semiconductor hetero structure and a manufacturing method according to the two-step process
US6635904B2 (en) 2001-03-29 2003-10-21 Lumileds Lighting U.S., Llc Indium gallium nitride smoothing structures for III-nitride devices
US6489636B1 (en) 2001-03-29 2002-12-03 Lumileds Lighting U.S., Llc Indium gallium nitride smoothing structures for III-nitride devices
US7829913B2 (en) 2002-06-28 2010-11-09 Hitachi Cable, Ltd. Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method
US7772599B2 (en) 2004-05-27 2010-08-10 Showa Denko K.K. Gallium nitride-based semiconductor stacked structure, production method thereof, and compound semiconductor and light-emitting device each using the stacked structure

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