JPH027919B2 - - Google Patents

Info

Publication number
JPH027919B2
JPH027919B2 JP18707885A JP18707885A JPH027919B2 JP H027919 B2 JPH027919 B2 JP H027919B2 JP 18707885 A JP18707885 A JP 18707885A JP 18707885 A JP18707885 A JP 18707885A JP H027919 B2 JPH027919 B2 JP H027919B2
Authority
JP
Japan
Prior art keywords
composition
crystal
rod
tungsten
raw material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP18707885A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6247000A (ja
Inventor
Takao Tanaka
Shigeki Ootani
Yoshio Ishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO
Original Assignee
KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO filed Critical KAGAKU GIJUTSUCHO MUKIZAISHITSU KENKYUSHOCHO
Priority to JP18707885A priority Critical patent/JPS6247000A/ja
Publication of JPS6247000A publication Critical patent/JPS6247000A/ja
Publication of JPH027919B2 publication Critical patent/JPH027919B2/ja
Granted legal-status Critical Current

Links

JP18707885A 1985-08-26 1985-08-26 タングステン・カ−バイドの結晶体の製造法 Granted JPS6247000A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18707885A JPS6247000A (ja) 1985-08-26 1985-08-26 タングステン・カ−バイドの結晶体の製造法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18707885A JPS6247000A (ja) 1985-08-26 1985-08-26 タングステン・カ−バイドの結晶体の製造法

Publications (2)

Publication Number Publication Date
JPS6247000A JPS6247000A (ja) 1987-02-28
JPH027919B2 true JPH027919B2 (zh) 1990-02-21

Family

ID=16199746

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18707885A Granted JPS6247000A (ja) 1985-08-26 1985-08-26 タングステン・カ−バイドの結晶体の製造法

Country Status (1)

Country Link
JP (1) JPS6247000A (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10043792A1 (de) * 2000-09-06 2002-03-14 Starck H C Gmbh Ultragrobes, einkristallines Wolframkarbid und Verfahren zu dessen Herstellung; und daraus hergestelltes Hartmetall
GB2509790B (en) * 2013-03-27 2015-02-25 Hardide Plc Superabrasive material with protective adhesive coating and method for producing said coating

Also Published As

Publication number Publication date
JPS6247000A (ja) 1987-02-28

Similar Documents

Publication Publication Date Title
EP0986655B1 (en) THE METHOD OF FABRICATION OF HIGHLY RESISTIVE GaN BULK CRYSTALS
US4303465A (en) Method of growing monocrystals of corundum from a melt
Schönherr et al. Growth germanium monosulfide single crystals by sublimation
JPS6065787A (ja) 転位のないケイ素単結晶ロツドの製造法
JP2005112718A5 (zh)
JPS61178495A (ja) 単結晶の成長方法
JPH027919B2 (zh)
Kletowski et al. Single crystal growth of (rare earth) Me3 compounds where Me≡ Sn, In and Pb
JP5326865B2 (ja) サファイア単結晶の製造方法
JP3069656B1 (ja) 球状の金属チタン及びチタン化合物の製造方法
JP5471398B2 (ja) エピタキシャル成長用のサファイア単結晶ウエハ及びその製造方法
JP2580523B2 (ja) 二ホウ化チタン単結晶の育成法
EP0018111B1 (en) Method of producing ferrite single crystals
US3932292A (en) Process for the manufacture of doped silver halides
JP2720927B2 (ja) Yb50単結晶体の製造方法
JP3912959B2 (ja) β−FeSi2結晶の製造方法および製造装置
JP2929007B1 (ja) Va族二ホウ化物単結晶の育成法
JPS63250428A (ja) インジウムの純化方法
JP2929006B1 (ja) 高品質結晶薄板材料の製造方法
JPH07206598A (ja) Cd1−x−yMnxHgyTe系単結晶の製造装置
JPS59131597A (ja) 高品質ガリウム砒素単結晶の製造方法
JP2997762B2 (ja) 六ホウ化カルシウム結晶の育成法
JPS5814399B2 (ja) チタン・カ−バイドの結晶体の製造法
JPS63315599A (ja) 無機化合物単結晶の成長方法
JP2997761B2 (ja) 二ホウ化レニウム単結晶の製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term