JPH0275823U - - Google Patents
Info
- Publication number
- JPH0275823U JPH0275823U JP15566788U JP15566788U JPH0275823U JP H0275823 U JPH0275823 U JP H0275823U JP 15566788 U JP15566788 U JP 15566788U JP 15566788 U JP15566788 U JP 15566788U JP H0275823 U JPH0275823 U JP H0275823U
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- gate
- static induction
- induction transistor
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000006698 induction Effects 0.000 claims description 7
- 230000003068 static effect Effects 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 claims description 3
- 238000004804 winding Methods 0.000 claims 2
- 230000001681 protective effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
Landscapes
- Control Of High-Frequency Heating Circuits (AREA)
- Electronic Switches (AREA)
Description
第１図は、本考案によるＳＩＴ駆動回路の実施
例を示す回路構成図。第２図は、ＳＩＴの等価回
路図。第３図は、ＳＩＴのゲート・ソース間バイ
アス電圧ＶＧＳの値と、ゲート・ソース間の入力
等価容量Ｇｉｓｓの関係を示す図。第４図はゲー
ト・ソース入力電圧ｖｇｓの波形を示し、第４図
ａは従来回路による波形、第４図ｂは本考案によ
る回路方式による波形を示す。第５図は、従来の
回路を示す図。
１１，５１……駆動信号源、Ｔ１１，Ｔ５１…
…ドライブトランス、Ｒ１１，Ｒ１２，Ｒ５１…
…抵抗、Ｃ１１，Ｃ５１……コンデンサ、Ｄ１１
……ダイオード、１２，５２……保護回路、ＳＩ
Ｔ１１，ＳＩＴ５１……静電誘導型トランジスタ
、１３，５３……負荷、Ｅ１１，Ｅ５１……電源
、Ｒｇ……ゲート側直列入力抵抗、ｒｇｓ……ゲ
ート・ソース入力並列抵抗、Ｒｄ……ドレーン抵
抗、Ｃｇｓ……ゲート・ソース間容量、Ｃｇｄ…
…ゲート・ドレーン間容量、Ｃｄｓ……ドレーン
・ソース間容量、μ……電圧増巾率、ｖｇｓ……
ゲート・ソース入力信号電圧、Ｃｉｓｓ……入力
等価容量、ＶＧＳ……ゲート・ソース間バイアス
電圧、Ｇ……ゲート、Ｄ……ドレン、Ｓ……ソー
ス、Ｔ４１……立ち上がり時間、Ｔ４２……パル
ス巾。
FIG. 1 is a circuit configuration diagram showing an embodiment of the SIT drive circuit according to the present invention. FIG. 2 is an equivalent circuit diagram of SIT. FIG. 3 is a diagram showing the relationship between the value of the gate-source bias voltage VGS of the SIT and the input equivalent capacitance Giss between the gate and source. FIG. 4 shows the waveform of the gate-source input voltage vgs, FIG. 4a shows the waveform according to the conventional circuit, and FIG. 4b shows the waveform according to the circuit system according to the present invention. FIG. 5 is a diagram showing a conventional circuit. 11, 51... Drive signal source, T11, T51...
...Drive transformer, R11, R12, R51...
...Resistor, C11, C51...Capacitor, D11
...Diode, 12,52...Protection circuit, SI
T11, SIT51...Static induction transistor, 13,53...Load, E11, E51...Power supply, Rg...Gate side series input resistance, rgs...Gate-source input parallel resistance, Rd...Drain resistance, Cgs...Gate-source capacitance, Cgd...
...Gate-drain capacitance, Cds...Drain-source capacitance, μ...Voltage amplification rate, vgs...
Gate-source input signal voltage, Ciss...input equivalent capacitance, VGS...gate-source bias voltage, G...gate, D...drain, S...source, T41...rise time, T42...pulse width .
Claims (1)
おいて、駆動信号源と静電誘導型トランジスタの
間をドライブトランスにより絶縁し、ドライブト
ランスの二次側巻線には並列に第１の抵抗を接続
し、一方の端子はコンデンサと、カソードが静電
誘導型トランジストのゲート端子と接続しアノー
ドがコンデンサの一端と接続して第２の抵抗と並
列回路を形成するダイオードとを直列に接続し、
該ドライブトランス二次側巻線の他方の端子は、
該静電誘導型トランジスタのソース端子に接続す
るとともに、ゲート端子とソース端子間にゲート
端子を静電誘導トランジスタが動作時負電位に保
持するよう構成した保護回路を接続し構成したこ
とを特徴とする静電誘導型トランジスタの駆動回
路。 In the gate side drive circuit of the static induction transistor, the drive signal source and the static induction transistor are insulated by a drive transformer, a first resistor is connected in parallel to the secondary winding of the drive transformer, One terminal is connected in series with a capacitor and a diode whose cathode is connected to the gate terminal of the electrostatic induction transistor and whose anode is connected to one end of the capacitor to form a parallel circuit with a second resistor;
The other terminal of the drive transformer secondary winding is
A protective circuit is connected to the source terminal of the static induction transistor and is connected between the gate terminal and the source terminal so that the gate terminal is held at a negative potential when the static induction transistor is in operation. A drive circuit for static induction transistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15566788U JPH0275823U (en) | 1988-11-29 | 1988-11-29 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15566788U JPH0275823U (en) | 1988-11-29 | 1988-11-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0275823U true JPH0275823U (en) | 1990-06-11 |
Family
ID=31433500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15566788U Pending JPH0275823U (en) | 1988-11-29 | 1988-11-29 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0275823U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5930560B1 (en) * | 2015-01-30 | 2016-06-08 | 株式会社京三製作所 | High frequency insulated gate driver circuit and gate circuit driving method |
-
1988
- 1988-11-29 JP JP15566788U patent/JPH0275823U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5930560B1 (en) * | 2015-01-30 | 2016-06-08 | 株式会社京三製作所 | High frequency insulated gate driver circuit and gate circuit driving method |
| US10038435B2 (en) | 2015-01-30 | 2018-07-31 | Kyosan Electric Mfg. Co., Ltd. | High-frequency-isolation gate driver circuit and gate circuit driving method |
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