JPH0274012A - Magnetic thin film - Google Patents
Magnetic thin filmInfo
- Publication number
- JPH0274012A JPH0274012A JP63226264A JP22626488A JPH0274012A JP H0274012 A JPH0274012 A JP H0274012A JP 63226264 A JP63226264 A JP 63226264A JP 22626488 A JP22626488 A JP 22626488A JP H0274012 A JPH0274012 A JP H0274012A
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetic
- thin film
- coercive force
- magnetic thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 239000000203 mixture Substances 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 abstract description 25
- 239000000758 substrate Substances 0.000 abstract description 16
- 239000000956 alloy Substances 0.000 abstract description 12
- 229910045601 alloy Inorganic materials 0.000 abstract description 12
- 230000004907 flux Effects 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 4
- 229920006395 saturated elastomer Polymers 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
- 239000001301 oxygen Substances 0.000 description 14
- 229910052760 oxygen Inorganic materials 0.000 description 14
- 238000005259 measurement Methods 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000005415 magnetization Effects 0.000 description 3
- -1 CoMo Inorganic materials 0.000 description 2
- 229910018979 CoPt Inorganic materials 0.000 description 2
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 2
- 239000010952 cobalt-chrome Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- IYLGZMTXKJYONK-ACLXAEORSA-N (12s,15r)-15-hydroxy-11,16-dioxo-15,20-dihydrosenecionan-12-yl acetate Chemical compound O1C(=O)[C@](CC)(O)C[C@@H](C)[C@](C)(OC(C)=O)C(=O)OCC2=CCN3[C@H]2[C@H]1CC3 IYLGZMTXKJYONK-ACLXAEORSA-N 0.000 description 1
- 229910002441 CoNi Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008451 emotion Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004452 microanalysis Methods 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- IYLGZMTXKJYONK-UHFFFAOYSA-N ruwenine Natural products O1C(=O)C(CC)(O)CC(C)C(C)(OC(C)=O)C(=O)OCC2=CCN3C2C1CC3 IYLGZMTXKJYONK-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、磁性′ａ躾例えば垂直磁気記録媒体に係わる
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to magnetic recording media, such as perpendicular magnetic recording media.
本発明による磁性薄膜は、組成式が
（Ｃｏａ Ｐｔｂ Ｂｃ） ５ｏｂ−ｘＯｘ（但し、ａ
、ｂ、ｃ、ｘは原子％）
なる組成式で示され、その組成範囲が、ａ−１ｏｏ−ｂ
−Ｃ
Ｏ≦ｂ≦５０
０．１≦Ｃ≦３０
０＜Ｘ≦１５
とした磁性＊Ｍｆ４を構成することによって高い垂直保
磁力Ｈｃ上及び商飽和磁束密度Ｂｓを有する晶い垂直異
方性磁界を保持した垂直磁気記録媒体として好適な磁性
薄膜を得る。The magnetic thin film according to the present invention has a compositional formula of (Coa Ptb Bc) 5ob-xOx (however, a
, b, c, x are atomic %), and the composition range is a-1oo-b
-C O≦b≦50 0.1≦C≦30 0<X≦15 By configuring the magnetism *Mf4, a crystalline perpendicular anisotropic magnetic field having a high perpendicular coercive force Hc and a quotient saturation magnetic flux density Bs is created. To obtain a magnetic thin film suitable for a perpendicular magnetic recording medium that retains .
従来の薄膜磁気記録媒体として用いられる磁性１１１１
の、等方性、すなわち面内磁化による磁性薄膜としては
、ＣｏＮｉ、 ＣｏＰ＋ ＣｏＰｔ等の合金磁性Ｎ繞が
知られている。これらＣｏＮ ｊ及びＣｏＰによる各磁
性ｉ１Ｍは、柱状構造を利用した硬磁気特性で、その飽
和磁束密度Ｂｓは約１０ｋＧ、保磁力Ｈｃは、約１（ｋ
Ｏｅ）ないしはそれ以下である。また、ＣｏＰｔ磁性ｉ
膜については、例えば特開昭５８−２００５１３号公報
にその開示があるが、この場合、その膜厚が３００へ以
下においては１．５ （ｋＯｅ ）以上に及ぶ高い保磁
力Ｈｃを示すものの、その膜厚が大となると、Ｂｓは１
０ｋＧ前後であるが、Ｈｃは高々 ７００（Ｏｅ）とい
う低い値となる。Magnetic 1111 used as a conventional thin film magnetic recording medium
As a magnetic thin film with isotropic, ie, in-plane magnetization, alloy magnetic N-layers such as CoNi, CoP+CoPt, etc. are known. Each magnetism i1M due to CoN j and CoP has hard magnetic properties using a columnar structure, and its saturation magnetic flux density Bs is about 10 kG and coercive force Hc is about 1 (k
Oe) or less. In addition, CoPt magnetic i
The film is disclosed in, for example, Japanese Patent Application Laid-Open No. 58-200513. In this case, although the film exhibits a high coercive force Hc of 1.5 (kOe) or more when the film thickness is less than 300 mm, As the film thickness increases, Bs becomes 1
Although it is around 0 kG, Hc is a low value of 700 (Oe) at most.
また、一方垂直磁化による磁性薄膜としては、ＣｏＣｒ
、 ＣｏＭｏ、 ＣｏＶ、 ＣｏＲｕ等の合金磁性ｉｌ
ｌが知られている。この場合、これら合金のうち、最も
磁気特性の優れているＣｏＣｒ系についてその代表的な
磁気特性をみると、Ｂｓが４（ｋＧ）〜６（ｋＧ）であ
り、垂直保磁力Ｈｃ上は、この合金膜のスパッタリング
等の被着成膜時の基板温度が１５０℃加熱の場合は、約
１．５ （ｋｏｅ ）に及ぶ値を示すものの、その成膜
時の基板温度が、室温程度である場合は、約３００ （
Ｏｅ）である。そして、垂直方向の角型比（Ｍｒ／Ｍｓ
）上は約０．２．異方性磁界ＨＫは約４〜６（ｋｏｅ）
である、この場合、そのＢｓが比較的低いという課題と
共にそのＢｃ上は、成膜時の基板温度を高くしないと高
い値を得ることができないことから、その基板としては
耐熱性の低い安価なポリエチレンテレフタレート（ＰＥ
Ｔ）基板を用いることができないという課題がある。On the other hand, as a magnetic thin film with perpendicular magnetization, CoCr
, CoMo, CoV, CoRu etc. alloy magnetic il
l is known. In this case, looking at the typical magnetic properties of the CoCr system, which has the best magnetic properties among these alloys, Bs is 4 (kG) to 6 (kG), and the perpendicular coercive force Hc is When the substrate temperature is heated to 150°C during deposition such as sputtering of an alloy film, the value reaches approximately 1.5 (koe), but when the substrate temperature during the deposition is around room temperature. is about 300 (
Oe). Then, the vertical squareness ratio (Mr/Ms
) above is about 0.2. Anisotropic magnetic field HK is approximately 4 to 6 (koe)
In this case, the problem is that the Bs is relatively low, and a high value for the Bc cannot be obtained unless the substrate temperature is raised during film formation, so an inexpensive substrate with low heat resistance is used as the substrate. Polyethylene terephthalate (PE
T) There is a problem that a substrate cannot be used.
本発明は上述したように膜厚を大にすると充分なＨｃが
得られないとか、成膜時の基板温度を高める必要がある
とか、充分な飽和磁束密度ＢＳを得難いなどの課題を解
決し、特に垂直磁化膜として好適な磁性薄膜を提供する
。The present invention solves the problems described above, such as not being able to obtain sufficient Hc when the film thickness is increased, the need to raise the substrate temperature during film formation, and the difficulty in obtaining a sufficient saturation magnetic flux density BS. A magnetic thin film particularly suitable as a perpendicular magnetization film is provided.
（課題を解決するための手段〕
本発明は、ＣｏＰＬＢ系合金、ないしはＣｏＢ糸合金合
金るものであり、特に、
（Ｃｏａ Ｐｔｂ Ｂｃ） １（Ｘ）−ｘＯｘ（但し、
ａ、ｂ、ｃ、ｘは原子％）
なる組成式で示され、その組成範囲が、ａ−ｔｏｏ−ｂ
−ｃ
Ｏ≦ｂ≦５０
０．１５ｃ≦３０
０＜ｘ≦１５
となる組成の磁性薄膜とする。(Means for Solving the Problems) The present invention relates to a CoPLB alloy or a CoB thread alloy, and in particular, (Coa Ptb Bc) 1(X)-xOx (however,
a, b, c, x are atomic %), and the composition range is a-too-b.
The magnetic thin film has a composition such that -c O≦b≦50 0.15c≦30 0<x≦15.
本発明による磁性ｆｉ１９ｔ！は、成膜時の基板温度を
商めることなくまた比較的厚い膜厚でも高い保磁力Ｈｃ
、高い飽和磁束密度Ｂｓ、高い垂直異方性磁界Ｈにを得
ることができ、更に垂直磁化膜として用いて好適な特性
を呈する。Magnetic fi19t according to the invention! can maintain a high coercive force Hc even with a relatively thick film thickness without changing the substrate temperature during film formation.
, a high saturation magnetic flux density Bs, and a high perpendicular anisotropy magnetic field H can be obtained, and furthermore, it exhibits suitable characteristics when used as a perpendicularly magnetized film.
実施例１
スライドガラス基板上に、マグネトロン型スパッタ装置
によって磁性薄膜を作製した。そのスパッタ条件は、
バックグラウンド真空度Ｐ ｙａ ； ４．ＯＸ １０
−’ Ｔｏｒｒとした。この場合のターゲ・ノドは、複
合ターゲット或いは合金ターゲットを用いた。複合ター
ゲットとしては、直径４インチ、厚さ３ｓｎのＣｏ迦−
ｘＢｘ（Ｘは原子％で、０≦Ｘ≦２５）の合金ターゲッ
ト上にその中心から、それぞれ６°、１２°、１８°の
広がり角を有し、厚さ１ｍｍのｐｔの扇形チップを３枚
から６装置いたターゲットを用いた０合金ターゲツトは
直径４インチ、厚さ３ｍｍのＣｏａ Ｐｔｂ Ｂｅ（ａ
、ｂ、ｃＪｊｔ子％）のターゲットを用いた。Example 1 A magnetic thin film was produced on a slide glass substrate using a magnetron sputtering device. The sputtering conditions are as follows: background vacuum degree Pya; 4. OX10
−' Torr. In this case, a composite target or an alloy target was used as the target nod. The composite target is a Co ball with a diameter of 4 inches and a thickness of 3 sn.
Three PT sector chips with a thickness of 1 mm and having divergence angles of 6°, 12°, and 18° from the center are placed on an alloy target of xBx (X is atomic %, 0≦X≦25). The target was a Coa Ptb Be(a) with a diameter of 4 inches and a thickness of 3 mm.
,b,cJjt%) targets were used.
実施例１において、ターゲットの組成の選定によって膜
組成を変化させてその組成と各磁気特性の関係を測定し
た。その測定結果を第１図〜第５図に示す、第１図〜第
５図の各図において底辺はＢの組成比（原子％）、左斜
辺はＣｏの組成比（原子％）、右斜辺はｐｔの組成比（
原子％）をとったものである。第１図は、飽和磁束密度
Ｂｓ（４πＭｓ）（ｋＧ）の測定結果を示したもので同
図中細線（１１）（１２） （１３）及び（１４）は
、それぞれＢｓが７．５ｋＧ。In Example 1, the film composition was changed by selecting the composition of the target, and the relationship between the composition and each magnetic property was measured. The measurement results are shown in Figures 1 to 5. In each of Figures 1 to 5, the bottom is the composition ratio of B (atomic %), the left hypotenuse is the composition ratio of Co (atomic %), and the right hypotenuse is is the composition ratio of pt (
%). Figure 1 shows the measurement results of the saturation magnetic flux density Bs (4πMs) (kG), and the thin lines (11), (12), (13) and (14) in the figure each have a Bs of 7.5 kG.
１０．０ｋＧ、 １２．５ｋＧ及び１５．０ｋＧの等値
線を示したものである。また、第２図は垂直（ＭＩ性Ｗ
ｉ膜の膜面に対して垂直）残留磁束密度Ｍｒ”と、面内
残留磁束密度Ｍｒ“との比、計上／Ｍｒ“の測定結果を
示し、同図中細線（２１） 、 （２２）及び（２３
）は、それぞれＭｒ↓／ Ｍｒ／／が０．５．１．０及
び１．５の等値線を示す。It shows isovalue lines of 10.0kG, 12.5kG and 15.0kG. In addition, Fig. 2 shows vertical (MI characteristic W)
The measurement results of the ratio of the residual magnetic flux density (perpendicular to the film surface of the i-film) Mr" and the in-plane residual magnetic flux density Mr", calculated/Mr", are shown by the thin lines (21), (22) and (23
) indicate isolines with Mr↓/Mr// of 0.5, 1.0 and 1.5, respectively.
第３図は垂直保磁力Ｈｃ” （Ｏｅ）の測定結果を示
し、同図中細線（３１） 、 （３２）及び（３３）
は、Ｈｃ上が１０００ （Ｏｅ） 、 ２０００ （Ｏ
ｅ）及び３０００ （Ｏｅ）の等（Ｉａ線を示す、第４
図は面内保磁力Ｈｃ“（Ｏｅ）の測定結果を示し、同図
中細１ｍ１（４１）及び（４２）は、それぞれ）Ｉｃ“
が、５００ （Ｏｅ） 、 １０００ （Ｏｅ）の等値
線を示す、第５図は垂直異方性磁界Ｈｘ（ｋＯｅ）と各
組成との関係を示し、同図中曲線（５１）はＨＫ −１
５，０の等値線を示す。Figure 3 shows the measurement results of the vertical coercive force Hc” (Oe), and the thin lines (31), (32) and (33) in the figure
is 1000 (Oe), 2000 (Oe) on Hc
e) and 3000 (Oe) (showing the Ia line, the fourth
The figure shows the measurement results of the in-plane coercive force Hc" (Oe), and the thin 1 m1 (41) and (42) in the figure are respectively) Ic"
Figure 5 shows the relationship between the perpendicular anisotropic magnetic field Hx (kOe) and each composition, and the curve (51) in the figure shows the isolines of 500 (Oe) and 1000 (Oe). 1
The 5,0 isoline is shown.
実施例２
実施例１と同様の方法によってＣｏｔＩＰＬ２２ Ｂ
ｔの磁性Ｖｓ膜を作製した。そして、この場合、スパッ
タの開始に先立って行われるスパッタ室内の排気によっ
て得るバックグラウンド真空度Ｐ８Ｇを変えた。そして
各バックグラウンド真空度ＰＦＩＩ３でのそれぞれ得ら
れた磁性薄膜Ｃ０Ｔｌ Ｐｈｚ Ｂ ｙ中の酸素濃度を
測定した。また、この各Ｐ田に等価な酸素分圧を、磁性
薄膜中の酸素濃度との対応によって求表 １
この実施例においては、Ｃ０Ｔｌ Ｐｂｚ Ｂ Ｔ 躾
についての膜中の酸素濃度と、ＰＢＧ及びＰＯ２との関
係をみたものであるが、他の組成のＣｏＰＬＢ系の磁性
薄膜についても、これの酸素濃度と、ＰＢＧ及びＰＯ２
との関係は殆んど同等の関係となった。Example 2 CotIPL22 B was produced by the same method as in Example 1.
A magnetic Vs film of t was fabricated. In this case, the background vacuum degree P8G obtained by evacuation of the sputtering chamber prior to the start of sputtering was varied. Then, the oxygen concentration in the magnetic thin film COTl Phz B y obtained at each background vacuum level PFII3 was measured. In addition, the oxygen partial pressure equivalent to each P field is calculated based on the correspondence with the oxygen concentration in the magnetic thin film. 1 In this example, the oxygen concentration in the film for C0Tl Pbz B This shows the relationship between the oxygen concentration and PBG and PO2 of CoPLB-based magnetic thin films with other compositions.
The relationship was almost the same.
実施例３
実施例１において、合金ターゲットを用いＣｏτ７Ｐｂ
εＢｙ磁性薄膜を作製した。この場合バックグラウンド
真空度ＰＢＧ−１μＴｏｒｒとし、更にそのスパッタ中
の酸素分圧を変えて得た各試料について、そのスパッタ
中の酸素分圧と垂直保磁力Ｈｃ上との関係を測定した結
果を第６図に示す、同図において、０印は、磁性薄秩下
に下地層として１５００人の厚さのＰｔ層を被着した場
合、Ｏ印は何ら下地層を介在させなかった場合を示す。Example 3 In Example 1, using an alloy target, Coτ7Pb
An εBy magnetic thin film was produced. In this case, the background vacuum level is set to PBG-1μTorr, and the relationship between the oxygen partial pressure in the sputtering and the vertical coercive force Hc is measured for each sample obtained by changing the oxygen partial pressure in the sputtering. In FIG. 6, the mark 0 indicates the case where a 1,500-layer thick Pt layer was deposited as an underlayer under the magnetic thin layer, and the mark O indicates the case where no underlayer was interposed.
実施例４
実施例１において、ＧＯ９２Ｂ ｓの合金ターゲット上
に広がり角が６°の扇形状ｐｔチップを６枚載せた複合
ターゲットを用い磁性薄膜を作製した。この場合バック
グラウンド真空度Ｐ８Ｇ−１μＴｏｒｒとし、そのスパ
ッタ中の酸素分圧ＰＯ２と、窒素分圧ＰＨ２を変えて得
た各試料について垂直保磁力Ｈｃ上と、垂直異方性磁界
際とを測定した結果を第７図に示す、同図において、・
印及びＯ印は酸素分圧ＰＯ２に対するＨｃ上及び血を測
定した結果を示し、■印及び０印は窒素分圧ＰＭ２に対
するＨｃ↓及びＨにを測定した結果を示す。Example 4 In Example 1, a magnetic thin film was produced using a composite target in which six fan-shaped PT chips with a spread angle of 6° were mounted on a GO92Bs alloy target. In this case, the background vacuum level was P8G-1μTorr, and the vertical coercive force Hc and vertical anisotropic magnetic field were measured for each sample obtained by changing the oxygen partial pressure PO2 and nitrogen partial pressure PH2 during sputtering. The results are shown in Figure 7, in which:
The marks and O marks indicate the results of measuring Hc and blood against oxygen partial pressure PO2, and the marks ■ and 0 show the results of measuring Hc↓ and H against nitrogen partial pressure PM2.
実施例５
実施例１においてバンクグラウンド真空度を変えて（Ｃ
ｏ〒ｔ Ｐｔ２２Ｂ ｖ ） ９ｓ Ｏｓの組成による
磁性薄膜を作製した。この場合の磁ＡヒＨ−磁界Ｈ曲線
を第８図に示す、同図中実線曲線は垂直方向の門−１１
曲線、破線曲線は面内方向のｌ’ｌ−８曲線をボす。Example 5 In Example 1, the bank ground vacuum degree was changed (C
A magnetic thin film having a composition of otPt22Bv)9sOs was fabricated. The magnetic A H - magnetic field H curve in this case is shown in Figure 8. The solid line curve in the figure is the vertical gate - 11.
The curved line and the dashed line curve correspond to the l'l-8 curve in the in-plane direction.
この磁性薄膜は垂直方向に対し高いＨｃとを有するすぐ
れた垂直値化１５（として形成されていることがわかる
。It can be seen that this magnetic thin film is formed as an excellent perpendicular value 15 having a high Hc in the perpendicular direction.
面、上述したところにおいて磁気特性は、試料振動型磁
力計によって測定されたものであり、膜組成は電子線プ
ローブマイクロアナリシス（１１！ＰＭＡ）と、Ｉ Ｐ
Ｃ（ｌｎｃｌｕｃｔｔｖｅｌｙ Ｃｏｕｐｌｅｄ Ｐ
Ｊａｓ＋ｗａ Ａｎａｌｙｓｉｓ）発光分析の併用によ
り渕疋し、表１の検電のｖＡ濃度は、ＮＩ詣ドース量の
明確な標準試料との比較で２次イオン質門分析ＳＩＭＳ
（Ｓｅｃｏｎｄａｒｙ Ｉｏｎ ＭａｓｓＳｐｅｃｔ
ｒｏｓｕＬｅｒ）法とＭＰＦｉＡ法とを併用して測定し
た。As mentioned above, the magnetic properties were measured using a sample vibrating magnetometer, and the film composition was determined using electron beam probe microanalysis (11!PMA) and IP
C(lnclcttvery Coupled P
The vA concentration of the voltage test in Table 1 was determined using secondary ion material analysis (SIMS) in comparison with a standard sample with a clear NI dose.
(Secondary Ion Mass Spect
The measurement was carried out using a combination of the rosuLer) method and the MPFiA method.
向、上述の各実施例においては、基数としてスライドガ
ラス撮を用いた場合であるが、そのほかボリイζド樹脂
基数、結晶化ガラス基板を始めＩとして、ＰＡＴ ＆板
等各棟基板を用いることもできる。In addition, in each of the above-mentioned embodiments, a slide glass is used as the substrate, but in addition, various substrates such as PAT & plates may be used as the base, including a polyamide resin substrate and a crystallized glass substrate. can.
（発明の効果〕
」二連の本発明によるＣｏＰ ｔ８ｏ０ないしはＣｏｔ
ｌｏＯ磁性薄膜は、成膜時の基板温度を商めることなく
また、例えば５０００人という膜厚においても、垂直磁
気記録媒体としてすぐれた磁気特性を示す磁性薄膜を得
ることができた。(Effect of the invention) ``Two series of CoP t8o0 or Cot according to the present invention
The loO magnetic thin film could be obtained without changing the substrate temperature during film formation, and even at a film thickness of, for example, 5,000, the magnetic thin film exhibits excellent magnetic properties as a perpendicular magnetic recording medium.
すなわち、第６図及び第７図をみて明らかなように、酸
素０２の導入によって垂直保磁力Ｈｃ上の格段の向上を
、さほど異方性磁界Ｈにの低下をみることなく得ること
ができ、また第１図〜第５図をみて明らかなように広い
組成範囲で高い８３． Ｈｃ上際が得られることが分る
。That is, as is clear from FIGS. 6 and 7, the introduction of oxygen 02 can significantly improve the perpendicular coercive force Hc without significantly reducing the anisotropic magnetic field H. Furthermore, as is clear from Figures 1 to 5, the 83% concentration is high over a wide composition range. It can be seen that the upper limit of Hc can be obtained.
史にまた、室温程度での成膜が可能であることから、Ｐ
ＥＴ等の低廉な基板を用いることができるなど、実用上
大きな利益を有する。Historically, since it is possible to form a film at around room temperature, P
It has great practical advantages, such as being able to use inexpensive substrates such as ET.
第１図〜第５図はそれぞれ本発明による磁性薄膜の各組
成に対する飽和磁束密度、残留磁束密度比、世直保磁力
、面内保磁力、垂直各測定結果を示し、第６図はスパッ
タ中の酸素分圧と垂直保磁力との関係の測定結果を示す
図、第７図は同様の酸素分圧と垂直保磁力及び垂直異方
性磁界の測定結果を示す図、第８図は本発明による磁性
薄膜の一例の門−Ｈ曲線図である。
４゜
− Ｂ Ｃ層＋％）
１゜
−８ （側）％）
飽和珀東審崖（４πＭｓ（ｋＧ））
第１図
ｙ＋ｖｉａ東完＊比（Ｍｒ／ Ｍｒ”）第２図
４Ｆ、！Ｅ保Ｘａ力（Ｈ（”（Ｏｅ））１゜
□Ｂ情！）’／ｌ）
重直屡方妊万龜蜂（Ｈｋ（ｋＯｅ））
第５図
如
− Ｂ （！与％）
面＾保Ｘ注力（Ｈｃ″（Ｏｅ））
鎗 １ Ｒ１
スハー／り中−＃ｌＬ肴４す及Ｐｏ２φＩＴｏｒｒ）第
図
庫−’ｆｕ月により凪ゼ主逼１Ｗ発、Ｂ−Ｈ曲線第８図Figures 1 to 5 show the saturation magnetic flux density, residual magnetic flux density ratio, direct coercive force, in-plane coercive force, and perpendicular measurement results for each composition of the magnetic thin film according to the present invention, and Figure 6 shows the measurement results during sputtering. Figure 7 is a diagram showing the measurement results of the relationship between oxygen partial pressure and vertical coercive force, Figure 7 is a diagram showing similar measurement results of oxygen partial pressure, vertical coercive force, and vertical anisotropy magnetic field, Figure 8 is a diagram showing the measurement results of the relationship between oxygen partial pressure and vertical coercive force, and Figure 8 is a diagram showing the measurement results of the relationship between oxygen partial pressure and vertical coercive force. FIG. 2 is a gate-H curve diagram of an example of a magnetic thin film according to the present invention. 4゜- B C layer +%) 1゜-8 (side) %) Saturated Kuto cliff (4πMs (kG)) Fig. 1 y+via east completion * ratio (Mr/ Mr”) Fig. 2 4F, !E Maintenance Xa power (H ("(Oe)) 1゜□B emotion!)'/l) Shige-Nao 屡方 ま龜bee (Hk (kOe)) Figure 5 - B (!%) Surface X focus (Hc'' (Oe)) Spear 1 R1 Suha/Rinaka-#lL appetizer 4S and Po2φITorr) 2nd library-'fu month, Nagize main 1W departure, B-H curve Figure 8
Claims (1)
＿ｘ（但し、ａ，ｂ，ｃ，ｘは原子％） なる組成式で示され、その組成範囲が、 ａ＝１００−ｂ−ｃ ０≦ｂ≦５０ ０．１≦ｃ≦３０ ０＜ｘ≦１５ であることを特徴とする磁性薄膜。[Claims] (Co_aPt_bB_c)_1_0_0_-_xO
It is represented by the compositional formula __x (where a, b, c, and x are atomic %), and its composition range is a=100-b-c 0≦b≦50 0.1≦c≦30 0<x≦ 15. A magnetic thin film characterized by:
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22626488A JP2625959B2 (en) | 1988-09-09 | 1988-09-09 | Magnetic thin film |
| EP89102895A EP0330116B1 (en) | 1988-02-22 | 1989-02-20 | Magnetic recording medium |
| KR1019890001965A KR970007795B1 (en) | 1988-02-22 | 1989-02-20 | Magnetio recording medium |
| DE68925045T DE68925045T2 (en) | 1988-02-22 | 1989-02-20 | Magnetic record carrier |
| HK98106793A HK1007625A1 (en) | 1988-02-22 | 1998-06-25 | Magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22626488A JP2625959B2 (en) | 1988-09-09 | 1988-09-09 | Magnetic thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0274012A true JPH0274012A (en) | 1990-03-14 |
| JP2625959B2 JP2625959B2 (en) | 1997-07-02 |
Family
ID=16842479
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22626488A Expired - Fee Related JP2625959B2 (en) | 1988-02-22 | 1988-09-09 | Magnetic thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2625959B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0415431A2 (en) * | 1989-08-30 | 1991-03-06 | Sony Corporation | Magnetic recording medium |
| EP0505783A1 (en) * | 1991-03-28 | 1992-09-30 | Fuji Photo Film Co., Ltd. | Magnetic recording medium |
| US5942342A (en) * | 1993-03-10 | 1999-08-24 | Kabushiki Kaisha Toshiba | Perpendicular recording medium and magnetic recording apparatus |
| US5991126A (en) * | 1991-10-22 | 1999-11-23 | Sony Corporation | Perpendicular magnetic recording and perpendicular magnetic reproducing apparatus |
| US6541131B1 (en) | 2000-05-25 | 2003-04-01 | Seagate Technology Llc | Perpendicular recording media with enhanced coercivity |
| CN102776395A (en) * | 2012-08-02 | 2012-11-14 | 西北工业大学 | Method for preparing Co-Gd alloy capable of improving soft magnetic performance |
-
1988
- 1988-09-09 JP JP22626488A patent/JP2625959B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0415431A2 (en) * | 1989-08-30 | 1991-03-06 | Sony Corporation | Magnetic recording medium |
| EP0505783A1 (en) * | 1991-03-28 | 1992-09-30 | Fuji Photo Film Co., Ltd. | Magnetic recording medium |
| US5991126A (en) * | 1991-10-22 | 1999-11-23 | Sony Corporation | Perpendicular magnetic recording and perpendicular magnetic reproducing apparatus |
| US5942342A (en) * | 1993-03-10 | 1999-08-24 | Kabushiki Kaisha Toshiba | Perpendicular recording medium and magnetic recording apparatus |
| US6541131B1 (en) | 2000-05-25 | 2003-04-01 | Seagate Technology Llc | Perpendicular recording media with enhanced coercivity |
| CN102776395A (en) * | 2012-08-02 | 2012-11-14 | 西北工业大学 | Method for preparing Co-Gd alloy capable of improving soft magnetic performance |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2625959B2 (en) | 1997-07-02 |
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