JPH0265359U - - Google Patents
Info
- Publication number
- JPH0265359U JPH0265359U JP14420088U JP14420088U JPH0265359U JP H0265359 U JPH0265359 U JP H0265359U JP 14420088 U JP14420088 U JP 14420088U JP 14420088 U JP14420088 U JP 14420088U JP H0265359 U JPH0265359 U JP H0265359U
- Authority
- JP
- Japan
- Prior art keywords
- shot barrier
- barrier
- semiconductor
- shot
- metal film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988144200U JPH0610700Y2 (ja) | 1988-11-04 | 1988-11-04 | ショットキバリアダイオード |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988144200U JPH0610700Y2 (ja) | 1988-11-04 | 1988-11-04 | ショットキバリアダイオード |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0265359U true JPH0265359U (no) | 1990-05-16 |
JPH0610700Y2 JPH0610700Y2 (ja) | 1994-03-16 |
Family
ID=31411694
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1988144200U Expired - Lifetime JPH0610700Y2 (ja) | 1988-11-04 | 1988-11-04 | ショットキバリアダイオード |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0610700Y2 (no) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10178186A (ja) * | 1996-10-15 | 1998-06-30 | Internatl Rectifier Corp | 高電圧ショットキーダイオード |
JP2012124329A (ja) * | 2010-12-08 | 2012-06-28 | Rohm Co Ltd | SiC半導体装置 |
JP2014045211A (ja) * | 2013-11-01 | 2014-03-13 | Rohm Co Ltd | SiC半導体装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63192274A (ja) * | 1987-01-13 | 1988-08-09 | フェアチャイルド セミコンダクタ コンポレーション | 耐アルファ粒子スタティックランダムアクセスメモリ用改良型ショットキーバリアダイオード |
-
1988
- 1988-11-04 JP JP1988144200U patent/JPH0610700Y2/ja not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63192274A (ja) * | 1987-01-13 | 1988-08-09 | フェアチャイルド セミコンダクタ コンポレーション | 耐アルファ粒子スタティックランダムアクセスメモリ用改良型ショットキーバリアダイオード |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10178186A (ja) * | 1996-10-15 | 1998-06-30 | Internatl Rectifier Corp | 高電圧ショットキーダイオード |
JP2012124329A (ja) * | 2010-12-08 | 2012-06-28 | Rohm Co Ltd | SiC半導体装置 |
JP2014045211A (ja) * | 2013-11-01 | 2014-03-13 | Rohm Co Ltd | SiC半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0610700Y2 (ja) | 1994-03-16 |