JPH0263289B2 - - Google Patents
Info
- Publication number
- JPH0263289B2 JPH0263289B2 JP8908882A JP8908882A JPH0263289B2 JP H0263289 B2 JPH0263289 B2 JP H0263289B2 JP 8908882 A JP8908882 A JP 8908882A JP 8908882 A JP8908882 A JP 8908882A JP H0263289 B2 JPH0263289 B2 JP H0263289B2
- Authority
- JP
- Japan
- Prior art keywords
- nozzle
- inert gas
- chemical
- valve
- pressurized inert
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000126 substance Substances 0.000 claims description 40
- 239000011261 inert gas Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 12
- 238000005507 spraying Methods 0.000 claims description 9
- 238000004381 surface treatment Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003595 mist Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nozzles (AREA)
- Coating Apparatus (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
【発明の詳細な説明】
この発明は、ガラス基板にクロームなどの薄膜
を蒸着し、その上にフオトレジストを塗布し、プ
リベークを施し、ついでそれにマスター版による
露光を行つたフオトマスク用基板や、シリコンに
アルミニウムの薄膜を蒸着し、その上に塗布した
フオトレジストをプリベークし、ついでそれにフ
オトマスクによる露光を行つたシリコンウエハな
どに対して、現像、エツチング、剥離などの表面
処理を行うためにこれらの前処理済基板、ウエハ
（以下被処理基板と称する。）にそれぞれ所定の処
理薬液をアスピレータ式ノズルにより散布する薬
液散布装置の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photomask substrate in which a thin film such as chrome is deposited on a glass substrate, a photoresist is applied thereon, prebaked, and then exposed to light using a master plate, and a silicon A thin film of aluminum is deposited on a silicon wafer, a photoresist coated thereon is prebaked, and then exposed to light using a photomask. In order to perform surface treatments such as development, etching, and peeling, The present invention relates to an improvement of a chemical liquid spraying device that sprays predetermined processing chemical liquids onto a processed substrate and a wafer (hereinafter referred to as processed substrates) using an aspirator type nozzle.
従来の装置においては薬液の散布が所定時間だ
けなされると、被処理基板の直上に設けられた処
理薬液散布用のアスピレータ式ノズルにそれぞれ
接続される薬液吸入管路ならびに加圧不活性ガス
供給管路にそれぞれ取付けられている開閉弁を同
時に閉状態とし、前記ノズルに対する薬液および
加圧不活性ガスの供給を同時に停止し、薬液の散
布を停止するのであるが、その際に前記ノズルの
噴出口すなわちノズルチツプに薬液が残留するこ
とがあり、それがときに液滴となつて所定の処理
を完了した被処理基板の面上に落下することがあ
る。このような落下液滴はそれまでに均一に表面
処理がなされた状態を乱し、たとえば著しい現像
むら、局部的なエツチングの過多を被処理基板に
生じさせることとなる。 In conventional equipment, after the chemical solution has been sprayed for a predetermined period of time, a chemical suction pipe and a pressurized inert gas supply pipe are connected to aspirator-type nozzles for dispersing the processing chemical solution provided directly above the substrate to be processed. The on-off valves installed in each channel are simultaneously closed, and the supply of the chemical solution and pressurized inert gas to the nozzle is simultaneously stopped, and the spraying of the chemical solution is stopped. In other words, the chemical solution may remain on the nozzle tip, and this may sometimes form droplets and fall onto the surface of the substrate to be processed after a predetermined process has been completed. Such falling droplets disturb the previously uniform surface treatment, resulting in, for example, severe uneven development and excessive local etching on the substrate to be processed.
この発明は従来の装置における前記した不都合
を解消するためになされたものであつて、前記加
圧不活性ガス管路に加圧不活性ガスを蓄えるアキ
ユムレータ用タンクを前記ノズル、開閉弁間にお
いて取付けてなり、薬液吸入管路ならびに加圧不
活性ガス供給管路のそれぞれ開閉弁を閉とし、前
記ノズルからの薬液散布を停止せしめ、ついで前
記ノズル内に残留する薬液を、薬液散布中に前記
アキユムレータ用タンク内に貯えられている加圧
不活性ガスを前記ノズルから噴出させることによ
り霧状にして飛散させ、ノズル内隅所に残留しな
いようにした薬液散布装置にかかるものである。 The present invention has been made in order to solve the above-mentioned disadvantages of conventional devices, and includes installing an accumulator tank for storing pressurized inert gas in the pressurized inert gas pipeline between the nozzle and the on-off valve. Then, the on-off valves of the chemical suction pipe and the pressurized inert gas supply pipe are closed to stop the spraying of the chemical from the nozzle, and then the chemical remaining in the nozzle is removed from the accumulator during the chemical spraying. The present invention relates to a chemical spraying device that sprays pressurized inert gas stored in a tank from the nozzle to disperse it in the form of a mist so that it does not remain in the corners of the nozzle.
以下、この発明にかかる実施例装置について図
面を参照しながら説明する。 DESCRIPTION OF THE PREFERRED EMBODIMENTS An example device according to the present invention will be described below with reference to the drawings.
第１図はこの実施例装置の要部を示す模式説明
図である。 FIG. 1 is a schematic explanatory diagram showing the main parts of this embodiment device.
所定の薬液１０がいれられたタンク１１からこ
の薬液１０を吸入する薬液吸入管路１２および加
圧不活性ガス（たとえば窒素ガスをボンベから減
圧し、適当な圧力にしたもの）を供給する加圧不
活性ガス供給管路１３がアスピレータ式ノズル１
４にそれぞれ接続されており、前記両管路１２，
１３には開閉弁AV，SV1がそれぞれ取付けられ
ている。さらに加圧不活性ガス供給管路１３に
は、前記ノズル１４と開閉弁SV1との間に、密閉
容器からなる加圧不活性ガスを蓄えるアキユムレ
ータ用タンク２１および逆止弁２２が管路上流に
向つてこの順に取付けられている。この実施例に
おいては処理薬液１０が引火性である場合に備
え、開閉弁AVには空気作動式のものが、開閉弁
SV1にはコントローラ１５によつてその開閉が制
御される電磁開閉弁がそれぞれ使用してある。そ
して前記開閉弁AVの作動機構に対して加圧不活
性ガスを導入するために加圧不活性ガス管路１３
と接続する分岐管路１６′が図示のとおり設けら
れている。なお１７は被処理基板、１８は別な不
活性ガス管路でタンク１１内の薬液１０の空気と
の接触による変質を防ぐとともに、液面上方の空
間部を常時正圧状態に保つための不活性ガスの導
入用である。 A chemical solution suction line 12 for inhaling a predetermined chemical solution 10 from a tank 11 filled with it, and a pressurizer for supplying pressurized inert gas (for example, nitrogen gas evacuated from a cylinder to an appropriate pressure). The inert gas supply line 13 is an aspirator type nozzle 1
4, and both the pipes 12,
On-off valves AV and SV 1 are respectively attached to 13. Further, in the pressurized inert gas supply pipe 13, between the nozzle 14 and the on-off valve SV 1 , an accumulator tank 21 consisting of a closed container for storing pressurized inert gas and a check valve 22 are installed upstream of the pipe. They are installed in this order. In this embodiment, in case the processing chemical 10 is flammable, the on-off valve AV is an air-operated one.
Each SV 1 uses an electromagnetic on-off valve whose opening/closing is controlled by a controller 15. A pressurized inert gas pipe 13 is used to introduce pressurized inert gas into the operating mechanism of the on-off valve AV.
A branch line 16' is provided as shown. Note that 17 is a substrate to be processed, and 18 is another inert gas pipe that prevents deterioration of the chemical solution 10 in the tank 11 due to contact with air, and also maintains a positive pressure state in the space above the liquid level at all times. This is for introducing active gas.
つぎにこの装置における動作について説明す
る。コントローラ１５からの信号により開閉弁
SV1が開状態にされると、加圧不活性ガスは分岐
管路１６′を経て開閉弁AVの作動機構に到達し、
この弁AVを開状態にするとともに、加圧不活性
ガス供給管路１３から逆止弁２２をへてアスピレ
ータ式ノズル１４に送りこまれ、加圧不活性ガス
供給管路１３に設けているレギユレータ（図示せ
ず）により所定の流量に調整され、そのノズル口
から外部へ噴出する。この不活性ガスの前記ノズ
ル口からの噴出によつて、薬液吸入管路１２が一
定の負圧状態に保たれることから、単位時間当り
一定量の薬液１０が前記管路１２によりタンク１
１から吸上げられ、開状態の開閉弁AVをとおさ
れ、前記ノズル１４に供給される。そしてこの供
給された薬液１０は、前記した加圧不活性ガスの
噴出流によつてノズル口から霧状となつて被処理
基板１７（通常所定の回転速度にて予め回転させ
られている。）の表面に均一に散布される。 Next, the operation of this device will be explained. Open/close valve by signal from controller 15
When SV 1 is opened, the pressurized inert gas reaches the operating mechanism of the on-off valve AV via the branch line 16';
When this valve AV is opened, the pressurized inert gas is fed from the pressurized inert gas supply line 13 through the check valve 22 to the aspirator type nozzle 14, and the regulator ( (not shown) to a predetermined flow rate, and is ejected to the outside from the nozzle opening. By ejecting this inert gas from the nozzle port, the chemical liquid suction line 12 is maintained in a constant negative pressure state, so that a certain amount of the chemical liquid 10 is delivered to the tank by the pipe line 12 per unit time.
1, passes through the open/close valve AV, and is supplied to the nozzle 14. The supplied chemical solution 10 is atomized from the nozzle opening by the above-mentioned pressurized inert gas jet flow, and is atomized onto the substrate to be processed 17 (usually rotated in advance at a predetermined rotational speed). evenly distributed over the surface.
ところで、加圧不活性ガス供給管路１３のライ
ン圧力は、前記ノズル１４において生ずる圧力損
失、いいかえればそのノズル口から大気に不活性
ガスが噴出されるまでに不活性ガスに作用する抵
抗の大きさによつておのずから規制される。 By the way, the line pressure of the pressurized inert gas supply pipe 13 is determined by the pressure loss that occurs in the nozzle 14, or in other words, the amount of resistance that acts on the inert gas before it is ejected from the nozzle opening into the atmosphere. It is regulated by itself.
薬液１０は開閉弁AV，SV1がコントローラ１
５に設定された一定時間開状態に保持されている
間、前記した一定流量にて前記ノズル１４から被
処理基板１７の表面に引続いて散布される。そし
てこの間に前記ライン圧力に保持される不活性ガ
スがアキユムレータ用タンク２１に前記ライン圧
力と同じ圧力になるまで蓄えられる。 Chemical solution 10 is on-off valve AV, SV 1 is controller 1
While the nozzle 14 is kept open for a certain period of time set at 5, the nozzle 14 is continuously sprayed onto the surface of the substrate 17 to be processed at the above-mentioned constant flow rate. During this time, the inert gas maintained at the line pressure is stored in the accumulator tank 21 until the pressure reaches the same pressure as the line pressure.
さて被処理基板１７の所定の表面処理に要する
薬液散布がコントローラ１５に設定した時間だけ
なされると、コントローラ１５から出力される信
号によつて開閉弁SV1が閉じられる。したがつて
開閉弁SV1より下流の管路１３および分岐管路１
６′内の不活性ガスはその圧力がいずれも大気圧
力とバランスするまで前記ノズル１４から外気に
放出される。その結果分岐管路１６′のライン圧
力が低下し、開閉弁AVが閉じられ、前記ノズル
１４への薬液１０の供給が停止する。 Now, when the chemical solution required for predetermined surface treatment of the substrate 17 to be processed has been sprayed for a time set in the controller 15, the on-off valve SV1 is closed by a signal output from the controller 15. Therefore, the pipe line 13 and branch pipe line 1 downstream of the on-off valve SV 1
The inert gas in 6' is discharged to the atmosphere through said nozzle 14 until its pressure balances with atmospheric pressure. As a result, the line pressure in the branch pipe line 16' decreases, the on-off valve AV is closed, and the supply of the chemical liquid 10 to the nozzle 14 is stopped.
この薬液１０の供給停止に引続いてごく短時間
＜この時間の長さはアキユムレータ用タンク２１
の容量によつて規制される＞薬液散布中にアキユ
ムレータ用タンク２１に蓄えられた加圧不活性ガ
スが前記ノズル１４のノズルチツプから外気に噴
き出し、それに残留した薬液１０に液滴となつて
落下する余裕を与えず、一瞬それを霧状にして外
部に飛散させる。 Following the stoppage of the supply of the chemical solution 10, there is a very short period of time.
During spraying of the chemical solution, the pressurized inert gas stored in the accumulator tank 21 is blown out from the nozzle tip of the nozzle 14 into the outside air and falls into the chemical solution 10 remaining therein as droplets. Without giving it any leeway, it momentarily turns into a mist and scatters outside.
薬液１０に引火性をもたぬものが用いられる場
合には、第２図に示すように、薬液吸入管路１２
の開閉弁に対しても電磁開閉弁SV2を用い、開閉
弁SV1とともにコントローラ１５により同時に制
御するようにすることもできる。この場合には逆
止弁２２は取付けるを要しない。 When the chemical solution 10 is non-flammable, as shown in FIG.
It is also possible to use the electromagnetic on-off valve SV 2 for the on-off valve and control it simultaneously with the on-off valve SV 1 by the controller 15. In this case, it is not necessary to install the check valve 22.
以上の説明において明らかなように、この発明
にかかる薬液散布装置においては、薬液吸入管
路、加圧不活性供給管路にそれぞれ設けられてい
る開閉弁を同時に閉状態にし、ノズルからの薬液
散布を停止したあと、アキユムレータ用タンクに
薬液散布中に蓄えられた加圧不活性ガスがごく短
時間ノズルから噴出することによりノズル内の残
留薬液を一瞬に外部へ霧状にして飛散させるよう
にされているので、ノズル内における薬液の残留
を皆無とし、従来の装置にときとして生じたノズ
ル口からの残留薬液の被処理基板上への滴下を完
全に防止することができたものである。 As is clear from the above description, in the chemical spraying device according to the present invention, the on-off valves provided in the chemical suction pipe and the pressurized inert supply pipe are simultaneously closed, and the chemical liquid is sprayed from the nozzle. After the system is stopped, the pressurized inert gas stored in the accumulator tank during spraying of the chemical liquid is ejected from the nozzle for a very short period of time, causing the residual chemical liquid in the nozzle to be instantaneously dispersed in the form of mist to the outside. Therefore, there is no residual chemical in the nozzle, and it is possible to completely prevent residual chemical from dripping onto the substrate to be processed from the nozzle opening, which sometimes occurs in conventional devices.
第１図はこの発明にかかる実施例装置の要部を
示す模式説明図、第２図はその別な実施例装置の
模式説明図である。
１０…薬液、１２…薬液吸入管路、１３…加圧
不活性ガス吸入管路、１４…アスピレータ式ノズ
ル、１７…被処理基板、２１…アキユムレータ用
タンク、２２…逆止弁、AV，SV1，SV2…開閉
弁。
FIG. 1 is a schematic explanatory diagram showing the main parts of an embodiment of the device according to the present invention, and FIG. 2 is a schematic explanatory diagram of another embodiment of the device. 10... Chemical liquid, 12... Chemical liquid suction line, 13... Pressurized inert gas suction line, 14... Aspirator type nozzle, 17... Processed substrate, 21... Tank for accumulator, 22... Check valve, AV, SV 1 , SV 2 ...Open/close valve.
Claims (1)
理を施すため、所定の薬液を吸入する薬液吸入管
路と加圧不活性ガスを供給するガス供給管路との
間にノズルを接続し、かつ前記両管路にそれぞれ
開閉弁を設け、これら開閉弁を操作することによ
り、前記基板に前記薬液を前記ノズルから散布せ
しめる装置において、前記加圧不活性ガス供給管
路に不活性ガスのアキユムレータ用タンクを前記
ノズルと開閉弁との間に取付け、薬液散布後小時
間このアキユムレータ用タンクからガスを噴出さ
せるようにしたことを特徴とする薬液散布装置。1. In order to perform surface treatments such as development, etching, and peeling on a substrate, a nozzle is connected between a chemical suction line that sucks in a predetermined chemical liquid and a gas supply line that supplies pressurized inert gas, and In an apparatus for dispersing the chemical solution onto the substrate from the nozzle by providing on-off valves in both pipes and operating these on-off valves, an inert gas accumulator tank is provided in the pressurized inert gas supply pipe. is installed between the nozzle and the on-off valve, and gas is ejected from the acumulator tank for a short time after spraying the chemical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8908882A JPS58205153A (en) | 1982-05-25 | 1982-05-25 | Sprayer of chemical solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8908882A JPS58205153A (en) | 1982-05-25 | 1982-05-25 | Sprayer of chemical solution |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58205153A JPS58205153A (en) | 1983-11-30 |
| JPH0263289B2 true JPH0263289B2 (en) | 1990-12-27 |
Family
ID=13961113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8908882A Granted JPS58205153A (en) | 1982-05-25 | 1982-05-25 | Sprayer of chemical solution |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58205153A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60139354A (en) * | 1983-12-28 | 1985-07-24 | Nissei Oobaru Kk | Low pressure spray apparatus |
| KR100582837B1 (en) * | 2003-12-23 | 2006-05-23 | 동부일렉트로닉스 주식회사 | Appratus and method of wafer planarization |
| JP5887089B2 (en) * | 2011-09-14 | 2016-03-16 | アドバンス電気工業株式会社 | Liquid supply device |
| JP6173192B2 (en) * | 2013-12-03 | 2017-08-02 | 株式会社ディスコ | Liquid ejector |
| JP2016172244A (en) * | 2015-03-18 | 2016-09-29 | リンテック株式会社 | Coating liquid supply device, coating liquid supply method, manufacturing method of lamination body, manufacturing method of gas barrier film, lamination body, and gas barrier film |
-
1982
- 1982-05-25 JP JP8908882A patent/JPS58205153A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58205153A (en) | 1983-11-30 |
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