JPH0262236A - Metallized film for capacitor and manufacture thereof - Google Patents
Metallized film for capacitor and manufacture thereofInfo
- Publication number
- JPH0262236A JPH0262236A JP63214144A JP21414488A JPH0262236A JP H0262236 A JPH0262236 A JP H0262236A JP 63214144 A JP63214144 A JP 63214144A JP 21414488 A JP21414488 A JP 21414488A JP H0262236 A JPH0262236 A JP H0262236A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- film
- vapor
- vacuum
- deposited film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000011104 metalized film Substances 0.000 title abstract 4
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 32
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 32
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000001704 evaporation Methods 0.000 claims abstract description 7
- 239000002985 plastic film Substances 0.000 claims abstract description 7
- 229920006255 plastic film Polymers 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 7
- 238000001771 vacuum deposition Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 abstract 3
- 230000002349 favourable effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 11
- -1 polyethylene terephthalate Polymers 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- LNVJLOIIRUIQCP-UHFFFAOYSA-N silanide Chemical compound [SiH3-] LNVJLOIIRUIQCP-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Laminated Bodies (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、コンデンサ用蒸着フィルム及びその製造方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a vapor-deposited film for a capacitor and a method for manufacturing the same.
［従来の技術］
従来、フィルムコンデンサ用の蒸着フィルムのＩｎ’／
Ｎ方法として、エンドレスのテープを用いたり、オイル
マスクを使用したりして、マージン部（非蒸着部）を設
けながら蒸着することが知られている。[Prior art] Conventionally, In'/ of vapor-deposited films for film capacitors
As the N method, it is known to perform vapor deposition while providing a margin part (non-evaporated part) by using an endless tape or an oil mask.
また、フィルム全面に金属蒸着を施し、レーザー光線を
当ててマージン部を設けることや、特開昭６２−２７９
６２０号公報に記載されているように、片刃に電圧を印
加してマージン部をつくることが知られている。In addition, metal vapor deposition is applied to the entire surface of the film, and margins are provided by irradiating the film with a laser beam.
As described in Japanese Patent Application No. 620, it is known to create a margin portion by applying a voltage to one edge.
また、アルミニウム蒸着フィルムの蒸着膜の断面の層構
成は、表層（１００人位まで）が酸化アルミニウムであ
り、内部がアルミニウム、フィルム表面近傍が酸化アル
ミニウムの３層構成になっている。Further, the layer structure of the cross section of the vapor deposited film of the aluminum vapor deposited film has a three-layer structure in which the surface layer (up to about 100 people) is aluminum oxide, the interior is aluminum, and the vicinity of the film surface is aluminum oxide.
［発明が解決しようとする課題］
しかしながら、このような従来の方法でつくった蒸着フ
ィルムは、蒸着膜の付着力が弱い、コンデンサ素子にし
た時に耐湿下での静電容量変化率が大きいという課題が
ある。[Problems to be solved by the invention] However, the vapor-deposited film produced by such a conventional method has problems such as weak adhesion of the vapor-deposited film and a large rate of change in capacitance under moisture resistance when used as a capacitor element. There is.
［課題を解決するための手段］
本発明は、
（１）プラスチックフィルム及び蒸着膜からなる蒸着フ
ィルムであって、該蒸着膜の断面が、少なくともＭ化ア
ルミニウム／アルミニウム／酸化アルミニウム／アルミ
ニウムで構成されていることを特徴とするコンデンサ用
蒸着フィルム、及び（２） プラスチックフィルムを
真空蒸着する方法において、１０−２〜１０ ’ Ｔｏ
ｒｒで真空蒸着した俊、真空度を１〜１０００１Ｏｒｒ
にし、その後１０″′〜１０ ’ Ｔｏｒｒで再度真空
蒸着することを特徴とするコンデンサ用蒸着フィルムの
製造方法、に関するものである。[Means for Solving the Problems] The present invention provides: (1) A vapor deposited film consisting of a plastic film and a vapor deposited film, wherein the cross section of the vapor deposited film is composed of at least aluminum Mide/aluminum/aluminum oxide/aluminum. 10-2 to 10' To
Shun vacuum evaporated with rr, vacuum degree 1~10001Orr
The present invention relates to a method for manufacturing a vapor-deposited film for a capacitor, which is characterized in that the film is vacuum-deposited again at 10'' to 10' Torr.
本発明にあ（ブるプラスチックフィルムとは、ポリエチ
レンテレフタレート、ポリエチレンナフタレート、ポリ
イミド、ポリカーボネート、ポリプロピレン、ポリフェ
ニレン４ノルフアイトなどのフィルムのいずれでもよい
が、特に好ましいのは、ポリエチレンテレタレートフイ
ルムでおる。The plastic film used in the present invention may be any film made of polyethylene terephthalate, polyethylene naphthalate, polyimide, polycarbonate, polypropylene, polyphenylene 4-norphite, etc., but polyethylene terethalate film is particularly preferred.
真空蒸着とは、通常の巻取式真空蒸着機を使用して、蒸
着金属を真空下で蒸発させて、プラスチックフィルム−
の片面あるいは両面に付着させるもので必る。蒸着金属
としては、アルミニウム、亜鉛、銅、錫などの低融点金
属のいずれも用いることができるが、特に好ましいのは
アルミニウムである。また、初めの蒸着と百度の蒸着で
異なる金属を用いてもよいが、好ましくは同じ金属を用
いる。Vacuum deposition is the process of evaporating deposited metal under vacuum using a regular winding type vacuum deposition machine to form a plastic film.
It must be attached to one or both sides of the surface. As the vapor-deposited metal, any low melting point metal such as aluminum, zinc, copper, or tin can be used, but aluminum is particularly preferred. Further, different metals may be used for the first vapor deposition and the second vapor deposition, but preferably the same metal is used.
本発明は、プラスチックフィルムをまず１０−２〜１０
’ Ｔｏｒｒの圧力でフィルム全面に、或いはテープ
などでマージンをとりながら真空蒸着する。The present invention first prepares a plastic film with a 10-2 to 10
' Vacuum evaporate on the entire surface of the film under Torr pressure or while keeping a margin with tape.
その後、真空度を１〜１０００Ｔｏｒｒに戻し、その後
再度真空度を１０−２〜１０−６Ｔｏｒｒにして、フィ
ルム全面おるいはマージンをセンサーでコントロールし
ながら、蒸着することが必要でおる。Thereafter, it is necessary to return the degree of vacuum to 1 to 1,000 Torr, then increase the degree of vacuum again to 10 -2 to 10 -6 Torr, and perform vapor deposition while controlling the entire surface or margin of the film with a sensor.
蒸着厚みは、０．０２〜０．２μｍ程度の範囲が好まし
い。The deposition thickness is preferably in the range of about 0.02 to 0.2 μm.
上記説明は、２回蒸着の場合についてのものであるが、
３回以上行なってもよいことはもちろんで必る。The above explanation is for the case of double evaporation, but
It is of course possible to do this three or more times, but it is not necessary.
本発明の蒸着フィルムは、アルミニウム蒸着の場合、蒸
着膜の断面が少なくとも酸化アルミニウム／アルミニウ
ム／酸化アルミニウム／アルミニウムの＠構造になって
いることが好ましい。特に好ましくは、蒸着膜の断面が
表面から酸化アルミニウム／アルミニウム／酸化アルミ
ニウム／アルミニウム／駿化アルミニウムの少なくとも
５層構造になっていることが望ましい。In the case of aluminum vapor deposition, the vapor deposited film of the present invention preferably has a cross section of at least an @ structure of aluminum oxide/aluminum/aluminum oxide/aluminum. Particularly preferably, the cross section of the deposited film has at least a five-layer structure of aluminum oxide/aluminum/aluminum oxide/aluminum/aluminum silanide from the surface.
こうしてできた蒸着フィルムは、仝面蒸着されたものは
、レーザー光線などでマージン部を作り、マイクロスリ
ットされる。マイクロスリットされたフィルムは、巻回
あるいは積層され、コンデンサ素子にし、公知の方法で
熱プレス、メタリコン、切断、電圧処理され、コンデン
サとして使用される。The thus-formed vapor-deposited film, which has been vapor-deposited on both sides, is then micro-slit with margins created using a laser beam or the like. The microslit film is wound or laminated to form a capacitor element, heat pressed, metallized, cut, and voltage treated using known methods to be used as a capacitor.
［発明の効果］
本発明は、−度蒸着した後、−旦圧力を上げ、再度蒸着
を行なうため、蒸着膜の付着、蒸着膜の配向、蒸着膜の
成長状態、蒸着膜の層構成が通常の蒸着のものと異なり
、緻密になったものと推定される。このため、蒸着膜の
付着力が向上し、コンデンサにした時の耐湿下の静電容
量変化率が減少したものと思われる。[Effects of the Invention] In the present invention, after the vapor deposition is performed, the pressure is increased once again and the vapor deposition is performed again. It is presumed that the material is denser than that of the vapor-deposited material. This seems to have improved the adhesion of the deposited film and reduced the rate of change in capacitance under moisture resistance when used as a capacitor.
［特性の測定方法及び効果の評価方法］（１） 蒸着
膜の付着力
恒温層に水を入れ、６５°Ｃの温水にし、これに１５分
間蒸着フィルムを浸漬し、蒸着膜の消失度合を観察した
。蒸着膜の変化がないものを○、少し変化したものを△
、蒸着膜がほとんど消失してしまったものを×とし、３
段階で付着力を評ｆＩｉした。[Method for measuring characteristics and evaluating effectiveness] (1) Adhesion of vapor deposited film Fill the constant temperature layer with water, make it hot at 65°C, soak the vapor deposited film in this for 15 minutes, and observe the degree of disappearance of the vapor deposited film. did. ○ means that there is no change in the deposited film, △ means that there is a slight change
, those in which the deposited film has almost disappeared are marked as ×, and 3
The adhesion force was evaluated at the step fIi.
（２） 静電容量変化率
蒸着したフィルムからコンデンサ素子を（１゜５μＦ）
をつくり、５０’Ｃ１９５％ＲＨで、３５Ｖの直流印加
の条件で２０００時間経過したときの静電容量変化率（
ΔＣ／Ｃ）（％）を測定した。(2) Capacitance change rate (1°5μF) from the vapor-deposited film
The capacitance change rate (
ΔC/C) (%) was measured.
（３）アルミニウム蒸着膜の層構成の判定赤外分光装置
ＩＦ５−１１３Ｖ （Ｂｒｕｋｅｒ型ＦＴ−ＩＲ１干渉
計ゲンツエル型）を用いて、中赤外領域透過スペクトル
、差スペクトルを求め、そのスペクトル（ＩＲと略す）
結果及びＥＳＣＡ（Ｘ線光電子分光）の測定結果から蒸
着膜の断面のＩＦＨｆｉ７成がアルミニウムでおるのか
酸化アルミニウムでおるのかの判定を行なった。(3) Determination of the layer structure of the aluminum vapor deposited film Using an infrared spectrometer IF5-113V (Bruker type FT-IR1 interferometer Genzel type), obtain the transmission spectrum in the mid-infrared region and the difference spectrum. omitted)
Based on the results and the measurement results of ESCA (X-ray photoelectron spectroscopy), it was determined whether the IFHfi7 structure in the cross section of the deposited film was aluminum or aluminum oxide.
［実施例］ 以下、実施例に基づいて、本発明を説明する。[Example] Hereinafter, the present invention will be explained based on Examples.
実施例１
ポリエチレンテレフタレートフィルム（１０μｍ）を、
巻取式真空蒸着機で、１０−’ Ｔｏｒｒの圧力でアル
ミニウムを真空蒸着した。−旦空気を吹きこみ、１０
Ｔｏｒｒにした後、再び真空（１０−４Ｔｏｒｒ ）に
し、再度アルミニウムを蒸着した。蒸着膜の厚みは、０
．０６μｍでめった。この蒸着フィルムの付着力を測定
すると、第１表のとおりであった。また、コンデンサに
して静電容量変化率を測定すると０．０１％であり、は
とんど変化はなく、良好でめった。また、アルミニウム
蒸着膜の断面の層構成は、表面から酸化アルミニウム、
アルミニウム、酸化アルミニウム、アルミニウム、酸化
アルミニウムの５層＃１ｒＩｉ造であった。Example 1 Polyethylene terephthalate film (10 μm),
Aluminum was vacuum deposited at a pressure of 10-' Torr using a roll-type vacuum deposition machine. - Blow in air once, 10
After the vacuum was set to Torr, the vacuum was again set (10-4 Torr), and aluminum was deposited again. The thickness of the deposited film is 0
．． 06 μm. The adhesive strength of this vapor-deposited film was measured and was as shown in Table 1. In addition, when the capacitance change rate was measured using a capacitor, it was 0.01%, which was good with almost no change. In addition, the layer structure of the cross section of the aluminum vapor deposited film is as follows: aluminum oxide,
It had a five-layer #1rIi structure of aluminum, aluminum oxide, aluminum, and aluminum oxide.
比較例１
ポリエチレンテレフタレートフィルム（１０μｍ）を巻
取式真空蒸着機で、’ｌ Ｑ−４ｒｏｒｒの圧力でアル
ミニウを蒸着した。蒸着膜の厚みは、０゜０６μｍであ
った。この蒸着フィルムの付着力を測定すると、第１表
のとおりであり、蒸着膜がほとんど消失してしまった。Comparative Example 1 Aluminum was deposited on a polyethylene terephthalate film (10 μm) using a winding vacuum deposition machine at a pressure of 1 Q-4 roll. The thickness of the deposited film was 0.06 μm. When the adhesive strength of this vapor deposited film was measured, it was as shown in Table 1, and the vapor deposited film had almost completely disappeared.
また、コンデンサにして静電容量変化率を測定すると、
１％であり、よい結果は得られなかった。また、蒸着膜
の断面の層構成は、表面から酸化アルミニウム、アルミ
ニウム、酸化アルミニウムの３層構造であった。Also, when measuring the capacitance change rate using a capacitor,
1%, and no good results were obtained. The cross-sectional layer structure of the deposited film was a three-layer structure of aluminum oxide, aluminum, and aluminum oxide from the surface.
比較例２
ポリエチレンテレフタレートフィルム（１０μｍ）を巻
取式真空蒸着機で、１０４Ｔｏｒｒでアルミニウムを真
空蒸着した。真空のまま（１０’Ｔｏｒｒ ）再度アル
ミニウムを蒸着した。蒸着膜の厚みはＯ； ０６μｍで
あった。この蒸着フィルムの付着力は、第１表のとおり
でおり、蒸着膜がほとんど消失してしまった。また、コ
ンデンサにして静電容量変化率を測定すると、０．５％
と良くなかった。蒸着膜の断面の層構成は、表面から酸
化アルミニウム、アルミニウム、酸化アルミニウムの３
層＠逍であった。Comparative Example 2 Aluminum was vacuum-deposited on a polyethylene terephthalate film (10 μm) using a winding vacuum deposition machine at 104 Torr. Aluminum was deposited again under vacuum (10' Torr). The thickness of the deposited film was 0.06 μm. The adhesive strength of this vapor-deposited film is as shown in Table 1, and the vapor-deposited film almost completely disappeared. Also, when measuring the capacitance change rate for a capacitor, it is 0.5%.
It wasn't good. The cross-sectional layer structure of the deposited film is aluminum oxide, aluminum, and aluminum oxide from the surface.
It was layer@sho.
第１表Table 1
Claims (2)
ィルムであつて、該蒸着膜の断面が、少なくとも酸化ア
ルミニウム／アルミニウム／酸化アルミニウム／アルミ
ニウムで構成されていることを特徴とするコンデンサ用
蒸着フィルム。(1) A vapor-deposited film for a capacitor comprising a plastic film and a vapor-deposited film, wherein a cross section of the vapor-deposited film is composed of at least aluminum oxide/aluminum/aluminum oxide/aluminum.
て、１０＾−＾２〜１０＾−＾６Ｔｏｒｒで真空蒸着し
た後、真空度を１〜１０００Ｔｏｒｒにし、その後１０
＾−＾２〜１０＾−＾６Ｔｏｒｒで再度真空蒸着するこ
とを特徴とするコンデンサ用蒸着フィルムの製造方法。(2) In the method of vacuum evaporating plastic film, after vacuum evaporating at 10^-^2 to 10^-^6 Torr, the degree of vacuum is set to 1 to 1000 Torr, and then 10
A method for producing a vapor-deposited film for a capacitor, comprising performing vacuum deposition again at ^-^2 to 10^-^6 Torr.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63214144A JP2625949B2 (en) | 1988-08-29 | 1988-08-29 | Evaporated film for capacitor and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63214144A JP2625949B2 (en) | 1988-08-29 | 1988-08-29 | Evaporated film for capacitor and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0262236A true JPH0262236A (en) | 1990-03-02 |
| JP2625949B2 JP2625949B2 (en) | 1997-07-02 |
Family
ID=16650957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63214144A Expired - Lifetime JP2625949B2 (en) | 1988-08-29 | 1988-08-29 | Evaporated film for capacitor and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2625949B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5267852A (en) * | 1992-07-28 | 1993-12-07 | Iwatani Sangyo Kabushiki Kaisha | Gas cylinder |
| CN111373244A (en) * | 2017-11-23 | 2020-07-03 | Tdk电子股份有限公司 | Method and apparatus for determining coating properties on transparent film and method for manufacturing capacitor film |
-
1988
- 1988-08-29 JP JP63214144A patent/JP2625949B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5267852A (en) * | 1992-07-28 | 1993-12-07 | Iwatani Sangyo Kabushiki Kaisha | Gas cylinder |
| CN111373244A (en) * | 2017-11-23 | 2020-07-03 | Tdk电子股份有限公司 | Method and apparatus for determining coating properties on transparent film and method for manufacturing capacitor film |
| US11703319B2 (en) | 2017-11-23 | 2023-07-18 | Tdk Electronics Ag | Method to determine properties of a coating on a transparent film, method for manufacturing a capacitor film and device to determine properties of a coating on a transparent film |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2625949B2 (en) | 1997-07-02 |
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