JPH0261965U - - Google Patents

Info

Publication number
JPH0261965U
JPH0261965U JP14025488U JP14025488U JPH0261965U JP H0261965 U JPH0261965 U JP H0261965U JP 14025488 U JP14025488 U JP 14025488U JP 14025488 U JP14025488 U JP 14025488U JP H0261965 U JPH0261965 U JP H0261965U
Authority
JP
Japan
Prior art keywords
crucible
raw material
single crystal
heater
material melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14025488U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP14025488U priority Critical patent/JPH0261965U/ja
Publication of JPH0261965U publication Critical patent/JPH0261965U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP14025488U 1988-10-27 1988-10-27 Pending JPH0261965U (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14025488U JPH0261965U (zh) 1988-10-27 1988-10-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14025488U JPH0261965U (zh) 1988-10-27 1988-10-27

Publications (1)

Publication Number Publication Date
JPH0261965U true JPH0261965U (zh) 1990-05-09

Family

ID=31404256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14025488U Pending JPH0261965U (zh) 1988-10-27 1988-10-27

Country Status (1)

Country Link
JP (1) JPH0261965U (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013542169A (ja) * 2010-11-15 2013-11-21 エルジー シルトロン インコーポレイテッド サファイアインゴットの成長装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046998A (ja) * 1983-08-26 1985-03-14 Sumitomo Electric Ind Ltd 単結晶引上方法及びそのための装置
JPS60221391A (ja) * 1984-04-18 1985-11-06 Toshiba Corp 化合物半導体単結晶育成装置
JPS60239389A (ja) * 1984-05-11 1985-11-28 Sumitomo Electric Ind Ltd 単結晶引上装置
JPH01242489A (ja) * 1988-03-23 1989-09-27 Nippon Mining Co Ltd 単結晶成長装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046998A (ja) * 1983-08-26 1985-03-14 Sumitomo Electric Ind Ltd 単結晶引上方法及びそのための装置
JPS60221391A (ja) * 1984-04-18 1985-11-06 Toshiba Corp 化合物半導体単結晶育成装置
JPS60239389A (ja) * 1984-05-11 1985-11-28 Sumitomo Electric Ind Ltd 単結晶引上装置
JPH01242489A (ja) * 1988-03-23 1989-09-27 Nippon Mining Co Ltd 単結晶成長装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013542169A (ja) * 2010-11-15 2013-11-21 エルジー シルトロン インコーポレイテッド サファイアインゴットの成長装置

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