JPH0259561B2 - - Google Patents

Info

Publication number
JPH0259561B2
JPH0259561B2 JP58123547A JP12354783A JPH0259561B2 JP H0259561 B2 JPH0259561 B2 JP H0259561B2 JP 58123547 A JP58123547 A JP 58123547A JP 12354783 A JP12354783 A JP 12354783A JP H0259561 B2 JPH0259561 B2 JP H0259561B2
Authority
JP
Japan
Prior art keywords
gas
silicon
temperature
sic
tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58123547A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5956308A (ja
Inventor
Kaataa Marinesu Jon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5956308A publication Critical patent/JPS5956308A/ja
Publication of JPH0259561B2 publication Critical patent/JPH0259561B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/20—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by pyrolytic processes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/90—Carbides
    • C01B32/914—Carbides of single elements
    • C01B32/956—Silicon carbide
    • C01B32/963—Preparation from compounds containing silicon
    • C01B32/977—Preparation from organic compounds containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin-film techniques
    • H01C17/14—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin-film techniques by chemical deposition
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/02—Amorphous compounds
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C01P2002/54—Solid solutions containing elements as dopants one element only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Conductive Materials (AREA)
JP58123547A 1982-09-24 1983-07-08 導電性物質 Granted JPS5956308A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US423491 1982-09-24
US06/423,491 US4451391A (en) 1982-09-24 1982-09-24 Conductive silicon carbide

Publications (2)

Publication Number Publication Date
JPS5956308A JPS5956308A (ja) 1984-03-31
JPH0259561B2 true JPH0259561B2 (enExample) 1990-12-12

Family

ID=23679087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58123547A Granted JPS5956308A (ja) 1982-09-24 1983-07-08 導電性物質

Country Status (5)

Country Link
US (1) US4451391A (enExample)
EP (1) EP0104405B1 (enExample)
JP (1) JPS5956308A (enExample)
CA (1) CA1190043A (enExample)
DE (1) DE3365450D1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6054913A (ja) * 1983-09-05 1985-03-29 Semiconductor Energy Lab Co Ltd 珪素繊維およびその作製方法
US4865659A (en) * 1986-11-27 1989-09-12 Sharp Kabushiki Kaisha Heteroepitaxial growth of SiC on Si
BE1001563A3 (fr) * 1988-04-12 1989-12-05 Inst Nat Interuniversitaire De Composites ceramique-ceramique, utiles pour applications electriques.
DE3911101A1 (de) * 1989-04-06 1990-10-11 Siedle Horst Kg Potentiometer
US5269971A (en) * 1989-07-11 1993-12-14 Ngk Insulators, Ltd. Starting material for use in manufacturing a voltage non-linear resistor
US5250281A (en) * 1989-07-11 1993-10-05 Ngk Insulators, Ltd. Process for manufacturing a voltage non-linear resistor and a zinc oxide material to be used therefor
EP0408308B1 (en) * 1989-07-11 1994-10-12 Ngk Insulators, Ltd. Process for manufacturing a voltage non-linear resistor and a zinc oxide material to be used therefor
DE102005049932A1 (de) * 2005-10-19 2007-04-26 Sicrystal Ag Verfahren zur Züchtung eines SiC:Ge-Volumenmischkristalls
JP6728097B2 (ja) * 2017-04-24 2020-07-22 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1226088B (de) * 1959-07-17 1966-10-06 Wacker Chemie Gmbh Verfahren zur Herstellung von hochreinem kristallinem Siliciumcarbid
GB1039748A (en) * 1964-07-25 1966-08-24 Ibm Improvements relating to methods of growing silicon carbide crystals epitaxially
GB1054519A (enExample) * 1964-12-05 1900-01-01
DE1521540B1 (de) * 1966-05-07 1970-04-16 Texas Instruments Inc Verfahren und Vorrichtung zur Herstellung von Siliciumkarbid-Schichten und -Formkoerpern
US3716844A (en) * 1970-07-29 1973-02-13 Ibm Image recording on tetrahedrally coordinated amorphous films
US4208449A (en) * 1974-09-11 1980-06-17 U.S. Philips Corporation Method of making an electric resistor having a resistance body consisting of silicon carbide having a negative temperature coefficient
US4042447A (en) * 1976-11-01 1977-08-16 Sotec Corporation Crystallizing a layer of silicon on a sodium thallium type crystalline alloy substrate
US4123571A (en) * 1977-09-08 1978-10-31 International Business Machines Corporation Method for forming smooth self limiting and pin hole free SiC films on Si
US4265991A (en) * 1977-12-22 1981-05-05 Canon Kabushiki Kaisha Electrophotographic photosensitive member and process for production thereof
JPS554040A (en) * 1978-06-26 1980-01-12 Hitachi Ltd Photoconductive material

Also Published As

Publication number Publication date
EP0104405B1 (en) 1986-08-20
DE3365450D1 (en) 1986-09-25
US4451391A (en) 1984-05-29
CA1190043A (en) 1985-07-09
JPS5956308A (ja) 1984-03-31
EP0104405A1 (en) 1984-04-04

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