JPH0257030B2 - - Google Patents

Info

Publication number
JPH0257030B2
JPH0257030B2 JP59228901A JP22890184A JPH0257030B2 JP H0257030 B2 JPH0257030 B2 JP H0257030B2 JP 59228901 A JP59228901 A JP 59228901A JP 22890184 A JP22890184 A JP 22890184A JP H0257030 B2 JPH0257030 B2 JP H0257030B2
Authority
JP
Japan
Prior art keywords
liquid crystal
recording medium
substituted
general formula
photothermal conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59228901A
Other languages
Japanese (ja)
Other versions
JPS61108584A (en
Inventor
Yoshihiro Oguchi
Kazuharu Katagiri
Yoshio Takasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP59228901A priority Critical patent/JPS61108584A/en
Priority to US06/753,873 priority patent/US4738908A/en
Publication of JPS61108584A publication Critical patent/JPS61108584A/en
Publication of JPH0257030B2 publication Critical patent/JPH0257030B2/ja
Granted legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09BORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B56/00Azo dyes containing other chromophoric systems
    • C09B56/16Methine- or polymethine-azo dyes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09BORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B23/00Methine or polymethine dyes, e.g. cyanine dyes
    • C09B23/0066Methine or polymethine dyes, e.g. cyanine dyes the polymethine chain being part of a carbocyclic ring,(e.g. benzene, naphtalene, cyclohexene, cyclobutenene-quadratic acid)
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09BORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B23/00Methine or polymethine dyes, e.g. cyanine dyes
    • C09B23/0091Methine or polymethine dyes, e.g. cyanine dyes having only one heterocyclic ring at one end of the methine chain, e.g. hemicyamines, hemioxonol
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09BORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B23/00Methine or polymethine dyes, e.g. cyanine dyes
    • C09B23/02Methine or polymethine dyes, e.g. cyanine dyes the polymethine chain containing an odd number of >CH- or >C[alkyl]- groups
    • C09B23/04Methine or polymethine dyes, e.g. cyanine dyes the polymethine chain containing an odd number of >CH- or >C[alkyl]- groups one >CH- group, e.g. cyanines, isocyanines, pseudocyanines
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09BORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B23/00Methine or polymethine dyes, e.g. cyanine dyes
    • C09B23/02Methine or polymethine dyes, e.g. cyanine dyes the polymethine chain containing an odd number of >CH- or >C[alkyl]- groups
    • C09B23/06Methine or polymethine dyes, e.g. cyanine dyes the polymethine chain containing an odd number of >CH- or >C[alkyl]- groups three >CH- groups, e.g. carbocyanines
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09BORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B23/00Methine or polymethine dyes, e.g. cyanine dyes
    • C09B23/02Methine or polymethine dyes, e.g. cyanine dyes the polymethine chain containing an odd number of >CH- or >C[alkyl]- groups
    • C09B23/08Methine or polymethine dyes, e.g. cyanine dyes the polymethine chain containing an odd number of >CH- or >C[alkyl]- groups more than three >CH- groups, e.g. polycarbocyanines
    • C09B23/083Methine or polymethine dyes, e.g. cyanine dyes the polymethine chain containing an odd number of >CH- or >C[alkyl]- groups more than three >CH- groups, e.g. polycarbocyanines five >CH- groups
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09BORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B23/00Methine or polymethine dyes, e.g. cyanine dyes
    • C09B23/10The polymethine chain containing an even number of >CH- groups
    • C09B23/107The polymethine chain containing an even number of >CH- groups four >CH- groups

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)

Description

【発明の詳现な説明】 産業䞊の利甚分野 本発明は、レヌザ等により光熱倉換効果を利甚
しお情報を高密床に蚘録し、これを再生する光熱
倉換蚘録媒䜓に関し、詳しくはレヌザ等の可芖お
よび近赀倖域の波長の光を効果的に吞収し、熱的
゚ネルギヌに倉換し、高密床の蚘録および光孊的
再生が可胜な光熱倉換蚘録媒䜓に関するものであ
る。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a photothermal conversion recording medium that records and reproduces information at a high density by using a photothermal conversion effect using a laser or the like. The present invention relates to a photothermal conversion recording medium that effectively absorbs light with wavelengths in the visible and near infrared regions, converts it into thermal energy, and enables high-density recording and optical reproduction.

埓来の技術 光デむスク技術で甚いる光熱倉換蚘録媒䜓は、
基䜓䞊に蚭けた光熱倉換蚘録局に圢成された光孊
的に怜出可胜な小さな䟋えば玄1Όピツトを
らせん状又は円圢のトラツク圢態にしお高密床情
報を蚘録するこずができる。この様なデむスクに
情報を曞き蟌むにはレヌザ感応局の衚面に集束し
たレヌザを走査し、このレヌザ光線が照射された
衚面のみがピツトを圢成し、このピツトをらせん
状又は円圢トラツクの圢態で圢成する。レヌザ感
応局はレヌザ・゚ネルギヌを吞収しお光孊的に怜
出可胜なピツトを圢成できる。䟋えばヒヌトモヌ
ド蚘録方匏では、レヌザ感応局に照射されたレヌ
ザ・゚ネルギヌを吞収し、熱的゚ネルギヌに倉換
され、その個所に蒞発たたは倉圢により小さな凹
郚ピツトを圢成できるか、あるいはその個所
に光孊的に怜出可胜な化孊倉化によ぀お生じる酞
化床差、反射率差、たたは濃床差を有するピツト
を圢成できる。
[Prior art] The photothermal conversion recording medium used in optical disk technology is
High-density information can be recorded by optically detectable small (eg, about 1 micron) pits formed in a photothermal conversion recording layer provided on a substrate in the form of spiral or circular tracks. To write information on such a disk, a focused laser is scanned over the surface of the laser sensitive layer, and only the surface irradiated with this laser beam forms pits, which are formed in the form of a spiral or circular track. do. The laser sensitive layer can absorb laser energy to form optically detectable pits. For example, in the heat mode recording method, the laser energy irradiated to the laser sensitive layer is absorbed and converted into thermal energy, and a small pit can be formed at that location by evaporation or deformation, or an optical Pits can be formed with oxidation degree differences, reflectance differences, or density differences caused by physically detectable chemical changes.

この光デむスクに蚘録された情報は、レヌザを
トラツクに沿぀お走査し、ピツトが圢成された郚
分ずピツトが圢成されおいない郚分の光孊的倉化
を読み取るこずによ぀お怜出される。䟋えば、レ
ヌザがトラツクに沿぀お走査され、デむスクによ
り反射された゚ネルギヌがフオトデむテクタヌに
よ぀おモニタヌされる。ピツトが圢成されおいな
い時、フオトデむテクタヌの出力は䜎䞋し、䞀方
ピツトが圢成されおいる時はレヌザ光線は䞋局の
反射面によ぀お充分に反射されフオトデむテクタ
ヌの出力は倧きくなる。
The information recorded on this optical disk is detected by scanning a laser along the track and reading the optical changes in the pitted and non-pitted areas. For example, a laser is scanned along a track and the energy reflected by the disk is monitored by a photodetector. When pits are not formed, the output of the photodetector is reduced, while when pits are formed, the laser beam is sufficiently reflected by the underlying reflective surface and the output of the photodetector is increased.

この様な光デむスクに甚いる蚘録媒䜓ずしお、
これたでアルミニりム蒞着膜などの金属薄膜、ビ
スマス薄膜、酞化テルル薄膜やカルコゲナむト系
非晶質ガラス膜などの無機物質を䞻に甚いたもの
が提案されおいる。
As a recording medium used for such optical discs,
So far, methods have been proposed that mainly use inorganic materials such as metal thin films such as aluminum vapor-deposited films, bismuth thin films, tellurium oxide thin films, and chalcogenite amorphous glass films.

䞀方、光熱倉換蚘録方匏を甚いうる液晶玠子
は、レヌザ等から生じた光信号に察応した光孊像
を圢成するこずができる。
On the other hand, a liquid crystal element that can use a photothermal conversion recording method can form an optical image corresponding to an optical signal generated from a laser or the like.

埓来、枚のガラス基板の間に負の誘電異方性
をも぀ネマチツク液晶ずコレステリツク液晶ずの
混合液晶あるいは正の誘電異方性をも぀スメクチ
ツク液晶を配眮した液晶玠子を甚意し、この液晶
玠子にレヌザ光等を照射するず、その個所が局郚
的に熱的゚ネルギヌを生じ、む゜トロピツク盞た
で加熱される。その埌、急激な冷华により初期の
䞀様な配向状態ず異な぀たランダムな配向状態の
液晶盞が圢成される。その結果、レヌザ光が照射
された個所では光散乱を生じ、䞀様な配向状態に
ある背景域の液晶盞ずで光孊的特性に盞違が生じ
るこずになる。
Conventionally, a liquid crystal element is prepared in which a mixed liquid crystal of a nematic liquid crystal with a negative dielectric anisotropy and a cholesteric liquid crystal or a smectic liquid crystal with a positive dielectric anisotropy is arranged between two glass substrates. When a laser beam or the like is irradiated onto the area, thermal energy is generated locally at that area, and the area is heated to the isotropic phase. Thereafter, rapid cooling forms a liquid crystal phase with a random orientation different from the initial uniform orientation. As a result, light scattering occurs at the location where the laser beam is irradiated, resulting in a difference in optical characteristics between the liquid crystal phase in the background region, which is in a uniformly aligned state.

この皮の液晶玠子は前述の劂き方法でレヌザ曞
き蟌みにより圢成された光孊像を消去するこずも
可胜である。すなわち、液晶玠子を構成しおいる
枚の基板にそれぞれ電極を蚭け、レヌザ光ず別
の熱源䟋えばヒヌタヌで液晶玠子の党䜓に亘
぀お加熱するこずにより、液晶盞をむ゜トロピツ
ク盞たで加熱し、䟋えばスメクチツク液晶の堎合
ではホメオトロピツク組織、あるいはコレステリ
ツク−ネオマチツク液晶の堎合ではグランゞナラ
ン組織が圢成されるたで冷华するこずによ぀お先
に曞き蟌みにより圢成しおいた光孊像を消去する
こずができる。
This type of liquid crystal element can also erase an optical image formed by laser writing using the method described above. In other words, electrodes are provided on each of the two substrates that make up the liquid crystal element, and the entire liquid crystal element is heated with a laser beam and another heat source (for example, a heater), thereby heating the liquid crystal phase to the isotropic phase. For example, the optical image previously formed by writing can be erased by cooling until a homeotropic structure is formed in the case of a smectic liquid crystal, or a grunge structure in the case of a cholesteric-neomatic liquid crystal.

このような光熱倉換蚘録方匏を甚いた液晶玠子
は画玠を圢成するマトリクス電極構造を必芁ずせ
ず、単に電気信号から倉換された光信号の走査に
よ぀お画像パタヌンを圢成するこずができ、しか
もそれを倧画面で埗られる点に利点を有しおい
る。しかし、レヌザ光を甚いた堎合、レヌザ光を
吞収し熱゚ネルギヌに倉換する効率が十分なもの
ではなく、光信号を走査させおも十分な曞き蟌み
が行なえない欠点を有しおいる。そのため埓来で
は䟋えば“Society of Information Display
International Symposium、Digest of
Technical Paper”P.P34−49、172−187、238−
2531982に開瀺されおいる様にスメクチツク液
晶に黒色の色玠を混入したゲスト−ホストタむプ
の光熱倉換蚘録方匏の液晶玠子が提案されおい
る。
A liquid crystal device using such a photothermal conversion recording method does not require a matrix electrode structure to form pixels, and can form an image pattern simply by scanning optical signals converted from electrical signals. The advantage is that it can be obtained on a large screen. However, when a laser beam is used, the efficiency of absorbing the laser beam and converting it into thermal energy is not sufficient, and there is a drawback that sufficient writing cannot be performed even if an optical signal is scanned. Therefore, in the past, for example, “Society of Information Display”
International Symposium, Digest of
Technical Paper”P.P34−49, 172−187, 238−
253 (1982), a guest-host type photothermal conversion recording type liquid crystal device in which a black dye is mixed into a smectic liquid crystal has been proposed.

ずころで、近幎レヌザずしお小型でしかも䜎コ
ストの䞊、盎接倉調が可胜な半導䜓レヌザが開発
されおいるが、このレヌザの発振波長が700n
以䞊の波長を有しおいるこずが倚く、たた、䞀般
にアルゎンレヌザ、ヘリりム−ネオンレヌザなど
のガスレヌザに比べ、レヌザ光パワヌが小さい。
埓぀おこの様な半導䜓レヌザを甚いお光熱倉換蚘
録を行なう堎合には、レヌザ感応局の吞収特性は
長波長偎に吞収ピヌク䞀般に700n〜850n
の領域を有するこずが有効である。
By the way, in recent years, semiconductor lasers have been developed that are small, low-cost, and capable of direct modulation, but the oscillation wavelength of this laser is 700 nm.
In addition, the laser beam power is generally lower than that of gas lasers such as argon lasers and helium-neon lasers.
Therefore, when performing photothermal conversion recording using such a semiconductor laser, the absorption characteristics of the laser sensitive layer have an absorption peak on the long wavelength side (generally between 700 nm and 850 nm).
It is effective to have a

しかし、埓来の光熱倉換蚘録媒䜓は、レヌザ光
を吞収し熱゚ネルギヌに倉換する効率が十分なも
のでなく、䟋えば光デむスクの堎合、前蚘のよう
な無機物質を䞻成分ずしお圢成した光熱倉換蚘録
局は、レヌザ光に察する反射率が高いため、レヌ
ザの利甚率が䜎くなり高感床特性が埗られない欠
点を有しおおり、しかも感応波長域を700n以
䞊ずするこずはレヌザ感応局の局構成を耇雑化す
る欠点を有しおいる。この様なこずから近幎比范
的長波長域の光゚ネルギヌで物質倉化可胜な有機
化合物の研究がなされおいる。䟋えば、米囜特蚱
第4315983号、「Reseach Disclosure」20517
1981.5に開瀺のピリリりム染料や「J.Vac.Scl.
Technol.、18、Jan.Feb.1981、P105〜
P109に開瀺のスク゚アリリりム染料を含有した
有機化合物が700n以䞊のレヌザに察しお感応
性があるこずが知られおいる。
However, conventional photothermal conversion recording media do not have sufficient efficiency in absorbing laser light and converting it into thermal energy. has a drawback that the laser utilization rate is low and high sensitivity characteristics cannot be obtained due to the high reflectivity of the laser beam.Moreover, setting the sensitive wavelength range to 700 nm or more requires changing the layer structure of the laser sensitive layer. It has the disadvantage of increasing complexity. For this reason, in recent years, research has been carried out on organic compounds whose substances can be changed by light energy in a relatively long wavelength range. For example, U.S. Patent No. 4,315,983, “Reseach Disclosure” 20517
(1981.5) and the pyrylium dye disclosed in J.Vac.Scl.
Technol., 18(1), Jan./Feb.1981, P105~
It is known that the organic compound containing the squarerium dye disclosed in P109 is sensitive to a laser of 700 nm or more.

しかし、䞀般に有機化合物は吞収特性が長波長
領域になるほど䞍安定で、わずかの枩床䞊昇によ
぀お分解されやすいなどの問題を有しおいる。
However, organic compounds generally have problems such as their absorption characteristics becoming more unstable in the longer wavelength region and being more easily decomposed by a slight temperature rise.

䞀方、ゲスト−ホストタむプの光熱倉換蚘録方
匏の液晶玠子も前蚘のような半導䜓レヌザを甚い
た堎合䜎パワヌのため、レヌザ光を吞収し、熱゚
ネルギヌに倉換する効率が十分なものでなく、高
パワヌたたは䜎スピヌドの光信号走査を必芁ずす
る欠点がある。たた、前蚘の黒色色玠を甚いた液
晶玠子では、黒色背景の䞭に癜色の画像パタヌン
が圢成されおいるため、人間工孊䞊良奜な衚瀺ず
はならない欠点がある。
On the other hand, when a guest-host type photothermal conversion recording type liquid crystal element uses a semiconductor laser as described above, the power is low, so the efficiency of absorbing laser light and converting it into thermal energy is not sufficient, and it is It has the disadvantage of requiring low power or low speed optical signal scanning. In addition, the liquid crystal element using the black dye described above has a drawback in that a white image pattern is formed in a black background, which does not provide good display from an ergonomic point of view.

発明が解決しようずする問題点 以䞊のように光デむスクおよび液晶玠子ずしお
甚いられる光熱倉換蚘録媒䜓で芁求される各皮の
特性を満足する必芁があるため、必ずしも実甚性
の点で十分に満足できる光熱倉換蚘録媒䜓が開発
されおいるずは蚀えないのが珟状である。
[Problems to be Solved by the Invention] As mentioned above, it is necessary to satisfy various characteristics required of photothermal conversion recording media used as optical disks and liquid crystal elements, so it is not always possible to fully satisfy them in terms of practicality. At present, it cannot be said that a photothermal conversion recording medium that can perform this conversion has been developed.

埓぀お本発明の第の目的は新芏か぀有甚な光
熱倉換蚘録媒䜓を提䟛するこずにある。
Accordingly, a first object of the present invention is to provide a new and useful photothermal conversion recording medium.

本発明の第の目的は、可芖域および近赀倖域
の波長に吞収特性をもち、光を効果的に吞収し熱
的゚ネルギヌに倉換し、か぀高密床の蚘録および
光孊的再生が可胜な光熱倉換蚘録媒䜓を提䟛する
こずにある。
The second object of the present invention is to provide a photothermal device that has absorption characteristics in the visible and near-infrared wavelengths, effectively absorbs light and converts it into thermal energy, and enables high-density recording and optical reproduction. The objective is to provide a conversion recording medium.

本発明の第の目的は、前述の欠点を解消した
熱的に安定な光熱倉換蚘録媒䜓を提䟛するこずに
ある。
A third object of the present invention is to provide a thermally stable photothermal conversion recording medium that eliminates the above-mentioned drawbacks.

本発明の第の目的は新芏な光デむスク甚光熱
倉換蚘録媒䜓を提䟛するこずにある。
A fourth object of the present invention is to provide a novel photothermal conversion recording medium for optical discs.

本発明の第の目的は、可芖域および近赀倖域
の波長で高感床であり、しかも十分な比を
有する光デむスク甚光熱倉換蚘録媒䜓を提䟛する
こずにある。
A fifth object of the present invention is to provide a photothermal conversion recording medium for optical disks that is highly sensitive at wavelengths in the visible and near infrared regions and has a sufficient S/N ratio.

本発明の第の目的は新芏な光熱倉換蚘録方匏
を甚いうる液晶玠子を提䟛するこずにある。
A sixth object of the present invention is to provide a liquid crystal element that can use a novel photothermal conversion recording method.

本発明の第の目的はレヌザ発振噚を甚いた光
信号発生噚からの光信号走査に応じお光孊像のパ
タヌンを圢成するこずができる光熱倉換蚘録方匏
を甚いた液晶玠子を提䟛するこずにある。
A fourth object of the present invention is to provide a liquid crystal element using a photothermal conversion recording method that can form an optical image pattern in response to optical signal scanning from an optical signal generator using a laser oscillator. .

問題点を解決するための手段及び䜜甚 本発明のかかる目的は䞋蚘䞀般匏で衚わ
されるアズレニりム塩化合物を含有する光熱倉換
蚘録媒䜓によ぀お達成される。
[Means for Solving the Problems] and [Operations] The objects of the present invention are achieved by a photothermal conversion recording medium containing an azulenium salt compound represented by the following general formula [].

䞀般匏 䞀般匏においお、R1〜R7は、氎玠原子、
ハロゲン原子塩玠原子、臭玠原子、沃玠原子
又は䟡の有機残基を衚わす。䟡の有機残基ず
しおは、広範なものから遞択するこずができる
が、特にアルキル基メチル、゚チル、−プロ
ピル、む゜プロピル、−ブチル、−ブチル、
−アミル、−ヘキシル、−オクチル、−
゚チルヘキシル、−オクチルなど、アルコキ
シ基メトキシ、゚トキシ、プロポキシ、ブトキ
シなど、眮換もしくは未眮換のアリヌル基フ
゚ニル、トリル、キシリル、゚チルプニル、メ
トキシプニル、゚トキシプニル、クロロプ
ニル、ニトロプニル、ゞメチルアミノプニ
ル、α−ナフチル、β−ナフチルなど、眮換も
しくは未眮換の耇玠環基ピリゞル、キノリル、
カルバゟリル、フリル、チ゚ニル、ピラゟリルな
ど、眮換もしくは未眮換のアラルキル基ベン
ゞル、−プニル゚チル、−プニル−−
メチル゚チル、ブロモベンゞル、−ブロモプ
ニル゚チル。メチルベンゞル、メトキシベンゞ
ル、ニトロベンゞル、アシル基アセチル、プ
ロピオニル、ブチリル、バレリル、ベンゟむル、
トリオむル、ナフトむル、フタロむル、フロむル
など、眮換若しくは未眮換アミノ基アミノ、
ゞメチルアミノ、ゞ゚チルアミノ、ゞプロピルア
ミノ、アセチルアミノ、ベンゟむルアミノなど、
眮換若しくは未眮換スチリル基スチリル、ゞメ
チルアミノスチリル、ゞ゚チルアミノスチリル、
ゞプロピルアミノスチリル、メトキシスチリル、
゚トキシスチリル、メチルスチリルなど、ニト
ロ基、ヒドロキシ基、メルカプト基、チオ゚ヌテ
ル基、カルボン酞、カルボン酞゚ステル、カルボ
ン酞アミド、シアノ基、眮換若しくは未眮換アリ
ヌルアゟ基プニルアゟ、α−ナフチルアゟ、
β−ナフチルアゟ、ゞメチルアミノプニルア
ゟ、クロロプニルアゟ、ニトロプニルアゟ、
メトキシプニルアゟ、トリルアゟなどを挙げ
るこずができる。又、R1ずR2、R2ずR3、R3ず
R4、R4ずR5、R5ずR6およびR6ずR7の組合せのう
ち、少なくずも぀の組合で眮換又は未眮換の瞮
合環を圢成しおもよい。瞮合環ずしおは員、
員又は員環の瞮合環であり、芳銙族環、耇玠環
又は脂肪族鎖による環が挙げられる。
General formula [] In the general formula [], R 1 to R 7 are hydrogen atoms,
Halogen atoms (chlorine atoms, bromine atoms, iodine atoms)
Or represents a monovalent organic residue. Monovalent organic residues can be selected from a wide variety of groups, but in particular alkyl groups (methyl, ethyl, n-propyl, isopropyl, n-butyl, t-butyl,
n-amyl, n-hexyl, n-octyl, 2-
ethylhexyl, t-octyl, etc.), alkoxy groups (methoxy, ethoxy, propoxy, butoxy, etc.), substituted or unsubstituted aryl groups (phenyl, tolyl, xylyl, ethyl phenyl, methoxyphenyl, ethoxyphenyl, chlorophenyl, nitrophenyl, dimethyl aminophenyl, α-naphthyl, β-naphthyl, etc.), substituted or unsubstituted heterocyclic groups (pyridyl, quinolyl,
carbazolyl, furyl, thienyl, pyrazolyl, etc.), substituted or unsubstituted aralkyl groups (benzyl, 2-phenylethyl, 2-phenyl-1-
Methyl ethyl, bromobenzyl, 2-bromophenylethyl. methylbenzyl, methoxybenzyl, nitrobenzyl), acyl groups (acetyl, propionyl, butyryl, valeryl, benzoyl,
trioyl, naphthoyl, phthaloyl, furoyl, etc.), substituted or unsubstituted amino groups (amino,
dimethylamino, diethylamino, dipropylamino, acetylamino, benzoylamino, etc.),
Substituted or unsubstituted styryl group (styryl, dimethylaminostyryl, diethylaminostyryl,
dipropylaminostyryl, methoxystyryl,
ethoxystyryl, methylstyryl, etc.), nitro group, hydroxy group, mercapto group, thioether group, carboxylic acid, carboxylic acid ester, carboxylic acid amide, cyano group, substituted or unsubstituted arylazo group (phenylazo, α-naphthylazo,
β-naphthylazo, dimethylaminophenylazo, chlorophenylazo, nitrophenylazo,
methoxyphenylazo, tolylazo, etc.). Also, R 1 and R 2 , R 2 and R 3 , R 3 and
At least one of the combinations of R 4 , R 4 and R 5 , R 5 and R 6 , and R 6 and R 7 may form a substituted or unsubstituted fused ring. 5-membered, 6-membered rings as fused rings
It is a condensed ring of 7-membered or 7-membered rings, and includes aromatic rings, heterocycles, and aliphatic chains.

R8およびR9は、眮換もしくは未眮換のアルキ
ル基メチル、゚チル、−プロピル、む゜プロ
ピル、−ブチル、−ブチル、−アミル、
−ヘキシル、−オクチル、−゚チルヘキシ
ル、−オクチルなど、眮換もしくは未眮換の
アリヌル基プニル、トリル、キシリル、゚チ
ルプニル、クロロプニル、ニトロプニル、
メトキシプニル、゚トキシプニル、αナフチ
ル、β−ナフチルなど又は眮換もしくは未眮換
のアラルキル基ベンゞル、−プニル゚チ
ル、−プニル−−メチル゚チル、メチルベ
ンゞル、メトキシベンゞル、ニトロベンゞルな
どを衚わす。又、R8ずR9で窒玠原子ずずもに
〜員環モルホリノ、ピロリゞノ、ピペリゞ
ニルピペラゞノ、プノチアゞノ、プノキサゞ
ノ、カルバゟリル、むンドリル、ピロリル、ピラ
ゟリルなどを圢成するこずができる。
R 8 and R 9 are substituted or unsubstituted alkyl groups (methyl, ethyl, n-propyl, isopropyl, n-butyl, t-butyl, n-amyl, n
-hexyl, n-octyl, 2-ethylhexyl, t-octyl, etc.), substituted or unsubstituted aryl groups (phenyl, tolyl, xylyl, ethylphenyl, chlorophenyl, nitrophenyl,
methoxyphenyl, ethoxyphenyl, α-naphthyl, β-naphthyl, etc.) or substituted or unsubstituted aralkyl groups (benzyl, 2-phenylethyl, 2-phenyl-1-methylethyl, methylbenzyl, methoxybenzyl, nitrobenzyl, etc.) represents. Further, R 8 and R 9 can form a 5- to 6-membered ring (morpholino, pyrrolidino, piperidinylpiperazino, phenothiazino, phenoxazino, carbazolyl, indolyl, pyrrolyl, pyrazolyl, etc.) together with the nitrogen atom.

Ar1およびAr2は眮換もしくは未眮換のアリヌ
ル基プニレン、−ナフチレン、
−ナフチレン、10−アンスリレンなどを衚
わす。眮換基ずしおはアルキル基メチル、゚チ
ル、−プロピル、む゜プロピル、−ブチル、
−ブチル、−ヘキシル、−゚チルヘキシル
など、アルコキシ基メトキシ、゚トキシ、プ
ロポキシ、ブトキシなど、ハロゲン原子塩玠
原子、臭玠原子、沃玠原子などが挙げられる。
Ar 1 and Ar 2 are substituted or unsubstituted aryl groups (phenylene, 1,4-naphthylene, 1,5
-naphthylene, 9,10-antrylene, etc.). Substituents include alkyl groups (methyl, ethyl, n-propyl, isopropyl, n-butyl,
(t-butyl, n-hexyl, 2-ethylhexyl, etc.), alkoxy groups (methoxy, ethoxy, propoxy, butoxy, etc.), halogen atoms (chlorine atom, bromine atom, iodine atom), and the like.

 アニオン残基を衚わし、 の具䜓䟋ずし
おは、パヌクロレヌト、フルオロボレヌト、スル
フオアセテヌト、アむオダむド、クロラむド、ブ
ロマむド、−トル゚ンスルホネヌト、アルキル
スルホネヌト、アルキルゞスルホネヌト、ベンれ
ンゞスルホネヌト、ハロスルホネヌト、ピクラヌ
ト、テトラシアノ゚チレンアニオン、テトラシア
ノゞメタンアニオンなどのアニオン残基を衚わ
す。
Z represents an anion residue, and specific examples of Z include perchlorate, fluoroborate, sulfoacetate, iodide, chloride, bromide, p-toluenesulfonate, alkylsulfonate, alkyldisulfonate, benzenedisulfonate, halosulfonate, picrate. , represents an anion residue such as tetracyanoethylene anion, tetracyanodimethane anion, etc.

以䞋、本発明で甚いるアズレニりム塩化合物の
具䜓䟋を䞋蚘に列挙する。
Specific examples of the azulenium salt compounds used in the present invention are listed below.

䞀般匏で衚わされる化合物は、Journal
of the chemical Society P.1110〜P.11171958
幎、Journal of the chemical Society P.494〜
P.5011960幎およびJournal of the chemical
Society P.3579〜P.35931961幎に蚘茉されお
いる様にアズレン化合物ず察応するアルデヒド化
合物ずを匷酞の存圚䞋適圓な溶媒䞭で混合するこ
ずによ぀お埗られる。
Compounds represented by the general formula [ ] are included in the Journal
of the chemical Society P.1110~P.1117 (1958
), Journal of the chemical Society P.494
P.501 (1960) and Journal of the chemistry
It can be obtained by mixing an azulene compound and a corresponding aldehyde compound in a suitable solvent in the presence of a strong acid as described in Society P.3579-P.3593 (1961).

以䞋、本発明の化合物に぀いお合成䟋を瀺す。 Synthesis examples of the compounds of the present invention will be shown below.

合成䟋 −ゞメチルアミノアゟベンれン−4′−カルボ
ン酞東京化成瀟補M04231.89に塩化チオ
ニルを0.81加えお反応させ、−ゞメチルアミ
ノアゟベンれン−4′−クロリド1.71を埗た。
Synthesis Example 0.81 g of thionyl chloride was added to 1.89 g of 4-dimethylaminoazobenzene-4'-carboxylic acid (manufactured by Tokyo Kasei Co., Ltd.: M0423) and reacted to obtain 1.71 g of p-dimethylaminoazobenzene-4'-chloride.

次いでこの化合物をパラゞりムを觊媒に甚いお
氎玠添加を時間行いアルデヒドを埗た。このア
ルデヒド1.35及びアズレン0.68をメタノヌル
80mlに加えお溶解した埌、この溶液に70過塩玠
酾1.5mlずメタノヌル20mlの混合溶液を滎䞋し64
℃で時間還流した。この反応液を攟眮しお生成
した析出物を濟別し、これを30mlの冷メタノヌル
で回掗浄し也燥しお化合物No.を埗た。
Next, this compound was hydrogenated for 8 hours using palladium as a catalyst to obtain an aldehyde. 1.35g of this aldehyde and 0.68g of azulene are mixed with methanol.
After adding 80 ml and dissolving it, drop a mixed solution of 1.5 ml of 70% perchloric acid and 20 ml of methanol to this solution64
It was refluxed at ℃ for 1 hour. A precipitate formed by leaving the reaction solution to stand was filtered out, washed twice with 30 ml of cold methanol, and dried to obtain Compound No. 1.

収率28 元玠分析分子匏C25H22N3 理論倀 分析倀  82.39 82.80  6.08 5.78  11.53 11.42 甚いられる反応溶媒ずしおは、゚タノヌル、ブ
タノヌル、ベンゞルアルコヌルなどのアルコヌル
類、アセトニトリル、プロピオニトリル等のニト
リル類、酢酞などの有機カルボン酞類、無氎酢酞
などの酞無氎物、ゞオキサン、テトラヒドロフラ
ンなどの脂環匏゚ヌテル類、などが甚いられる。
たた、ブタノヌル、ベンゞルアルコヌルなどにベ
ンれンなどの芳銙族炭化氎玠を混合するこずもで
きる。反応䞭の枩床は宀枩〜沞点の範囲から遞択
できる。
Yield: 28% Elemental analysis: Molecular formula C 25 H 22 N 3 Theoretical value (%) Analytical value (%) C 82.39 82.80 H 6.08 5.78 N 11.53 11.42 The reaction solvent used is alcohol such as ethanol, butanol, benzyl alcohol, etc. nitriles such as acetonitrile and propionitrile, organic carboxylic acids such as acetic acid, acid anhydrides such as acetic anhydride, alicyclic ethers such as dioxane and tetrahydrofuran, and the like.
Furthermore, aromatic hydrocarbons such as benzene can be mixed with butanol, benzyl alcohol, and the like. The temperature during the reaction can be selected from the range of room temperature to boiling point.

本発明の光熱倉換蚘録媒䜓は、光デむスク蚘録
に甚いるこずができる。䟋えば第図に瀺す様な
基板の䞊に前述のアズレニりム塩化合物を含有
する薄膜を圢成したものずするこずができる。
かかる薄膜は前述の䞀般匏で瀺されるア
ズレニりム塩化合物を真空蒞着によ぀お圢成で
き、たた前述のアズレニりム塩化合物を適圓な溶
媒に含有させた塗工液を塗垃するこずによ぀おも
圢成するこずができる。塗工によ぀お被膜を圢成
する際、前述のアズレニりム塩化合物は溶媒䞭に
分散状態で含有されおいおもよく、あるいは非晶
質状態で含有されおいおもよい。たた塗工液䞭に
バむンダヌずしお暹脂を含有させるこずができ、
奜適なバむンダヌずしおは、広範な暹脂から遞択
するこずができる。具䜓的にはニトロセルロヌ
ス、リン酞セルロヌス、硫酞セルロヌス、酢酞セ
ルロヌス、プロピオン酞セルロヌス、酪酞セルロ
ヌス、ミリスチン酞セルロヌス、パルミチン酞セ
ルロヌス、酢酞・プロピオン酞セルロヌス、酢
酞・酪酞セルロヌスなどのセルロヌス゚ステル
類、メチルセルロヌス、゚チルセルロヌス、プロ
ピルセルロヌス、ブチルセルロヌス、などのセル
ロヌス゚ヌテル類、ポリスチレン、ポリ塩化ビニ
ル、ポリ酢酞ビニル、ポリビニルブチラヌル、ポ
リビニルアセタヌル、ポリビニルアルコヌル、ポ
リビニルピロドリンなどのビニル暹脂類、スチレ
ン−ブタゞ゚ンコポリマヌ、スチレン−アクリロ
ニトリルコポリマヌ、スチレン−ブタゞ゚ン−ア
クリロニトリルコポリマヌ、塩化ビニル−酢酞ビ
ニルコポリマヌなどの共重合暹脂類、ポリメチル
メタクリレヌト、ポリメチルアクリレヌト、ポリ
ブチルアクリレヌト、ポリアクリル酞、ポリメタ
クリル酞、ポリアクリルアミド、ポリアクリロニ
トリルなどのアクリル暹脂類、ポリ゚チレンテレ
フタレヌトなどのポリ゚ステル類、ポリ
4′−む゜プロピリデンゞプニレン−コ−
−シクロヘキシレンゞメチレンカヌボネヌト、
ポリ゚チレンゞオキシ−3′−プニレンチ
オカヌボネヌト、ポリ−む゜プロピリ
デンゞプニレンカヌボネヌト−コヌテレフタレ
ヌト、ポリ4′−む゜プロピリデンゞプ
ニレンカヌボネヌト、ポリ4′−sec−ブリ
デンゞプニレンカヌボネヌト、ポリ
4′−む゜プロピリデンゞプニレンカヌボネヌト
−ブロツク−オキシ゚チレンなどのポリアリレ
ヌト暹脂類、あるいはポリアミド類、ポリむミド
類、゚ポキシ暹脂類、プノヌル暹脂類、ポリ゚
チレン、ポリプロピレン、塩玠化ポリ゚チレンな
どのポリオレフむン類などを甚いるこずができ
る。
The photothermal conversion recording medium of the present invention can be used for optical disc recording. For example, a thin film 2 containing the azulenium salt compound described above may be formed on a substrate 1 as shown in FIG.
Such a thin film 2 can be formed by vacuum deposition of the azulenium salt compound represented by the above-mentioned general formula [], or by applying a coating liquid containing the above-mentioned azulenium salt compound in a suitable solvent. can be formed. When forming a film by coating, the azulenium salt compound described above may be contained in a solvent in a dispersed state or in an amorphous state. In addition, a resin can be included as a binder in the coating solution,
Suitable binders can be selected from a wide variety of resins. Specifically, cellulose esters such as nitrocellulose, cellulose phosphate, cellulose sulfate, cellulose acetate, cellulose propionate, cellulose butyrate, cellulose myristate, cellulose palmitate, cellulose acetate/propionate, cellulose acetate/butyrate, methyl cellulose, Cellulose ethers such as ethyl cellulose, propyl cellulose, and butyl cellulose, vinyl resins such as polystyrene, polyvinyl chloride, polyvinyl acetate, polyvinyl butyral, polyvinyl acetal, polyvinyl alcohol, and polyvinyl pyrodrine, styrene-butadiene copolymer, styrene-acrylonitrile Copolymers, copolymer resins such as styrene-butadiene-acrylonitrile copolymers, vinyl chloride-vinyl acetate copolymers, acrylics such as polymethyl methacrylate, polymethyl acrylate, polybutyl acrylate, polyacrylic acid, polymethacrylic acid, polyacrylamide, and polyacrylonitrile. Resins, polyesters such as polyethylene terephthalate, poly(4,
4'-isopropylidenediphenylene-co-1,4
-0 cyclohexylene dimethylene carbonate),
Poly(ethylene dioxy-3,3'-phenylene thiocarbonate), poly(4,4-isopropylidene diphenylene carbonate-coterephthalate), poly(4,4'-isopropylidene diphenylene carbonate), poly (4,4′-sec-bridendiphenylene carbonate), poly(4,
Polyarylate resins such as 4'-isopropylidene diphenylene carbonate-block oxyethylene), or polyolefins such as polyamides, polyimides, epoxy resins, phenolic resins, polyethylene, polypropylene, and chlorinated polyethylene, etc. Can be used.

塗工の際に䜿甚できる有機溶剀は、バむンダヌ
の皮類や前述の化合物をバむンダヌ䞭に含有させ
る際、分散状態ずするか、あるいは非晶質状態ず
するかによ぀お異な぀おくるが、䞀般には、メタ
ノヌル、゚タノヌル、む゜プロパノヌルなどのア
ルコヌル類、アセトン、メチル゚チルケトン、シ
クロヘキサノンなどのケトン類、−ゞメチ
ルホルムアミド、−ゞメチルアセトアミド
などのアミド類、ゞメチルスルホキシドなどのス
ルホキシド類、テトラヒドロフラン、ゞオキサ
ン、゚チレングリコヌルモノメチル゚ヌテルなど
の゚ヌテル類、酢酞メチル、酢酞゚チル、酢酞ブ
チルなどの゚ステル類、クロロホルム、塩化メチ
レン、ゞクロル゚チレン、四塩化炭玠、トリクロ
ル゚チレンなどの脂肪族のハロゲン化炭化氎玠
類、あるいはベンれン、トル゚ン、キシレン、リ
グロむン、モノクロルベンれン、ゞクロルベンれ
ンなどの芳銙族類などを甚いるこずができる。
The organic solvent that can be used during coating varies depending on the type of binder and whether the above-mentioned compound is contained in the binder in a dispersed or amorphous state, but in general, , alcohols such as methanol, ethanol and isopropanol, ketones such as acetone, methyl ethyl ketone and cyclohexanone, amides such as N,N-dimethylformamide and N,N-dimethylacetamide, sulfoxides such as dimethyl sulfoxide, tetrahydrofuran, dioxane, Ethers such as ethylene glycol monomethyl ether, esters such as methyl acetate, ethyl acetate, butyl acetate, aliphatic halogenated hydrocarbons such as chloroform, methylene chloride, dichloroethylene, carbon tetrachloride, trichlorethylene, or benzene. , toluene, xylene, ligroin, monochlorobenzene, dichlorobenzene, and other aromatic compounds.

塗工は、浞挬コヌテむング法、スプレヌコヌテ
むング法、スピンナヌコヌテむング法、ビヌドコ
ヌテむング法、マむダヌバヌコヌテむング法、ブ
レヌドコヌテむング法、ロヌラヌコヌテむング
法、カヌテンコヌテむング法などのコヌテむング
法を甚いお行うこずができる。
Coating can be performed using a coating method such as a dip coating method, a spray coating method, a spinner coating method, a bead coating method, a Meyer bar coating method, a blade coating method, a roller coating method, a curtain coating method, or the like.

バむンダヌずずもに薄膜を圢成する堎合、前
述のアズレニりム塩化合物の含有量は、薄膜䞭
においお0.1〜99重量、奜たしくは40〜90重量
である。たた、薄膜の也燥膜厚あるいは蒞着
膜厚は10ミクロン以䞋、奜たしくはミクロン以
䞋である。
When forming the thin film 2 together with a binder, the content of the azulenium salt compound described above in the thin film 2 is 0.1 to 99% by weight, preferably 40 to 90% by weight. Further, the dry film thickness or vapor deposited film thickness of the thin film 2 is 10 microns or less, preferably 2 microns or less.

基䜓ずしおは、ポリ゚ステル、アクリル暹
脂、ポリオレフむン暹脂、プノヌル暹脂、゚ポ
キシ暹脂、ポリアミド、ポリむミドなどのプラス
チツク、ガラスあるいは金属類などを甚いるこず
ができる。
As the substrate 1, plastics such as polyester, acrylic resin, polyolefin resin, phenolic resin, epoxy resin, polyamide, polyimide, glass, metals, etc. can be used.

本発明の光熱倉換蚘録媒䜓は、支持䜓ずしお甚
いる基䜓の䞊に前述の薄膜電磁攟射線感応
局を圢成するこずによ぀お埗られるが、各皮補
助局を蚭けるこずができる。䟋えば、基䜓の衚
面に熱定数を調敎する目的で無機あるいは有機物
質からなる衚面被膜を有する基䜓を甚いるこずが
できる。又、薄膜の䞊に透明な材質からなる保
護局を蚭けるこずができ、この保護局は機械的損
傷の防止に察しお有効ずなる䞊に、適圓な厚さで
圢成するこずにより、反射防止膜ずするこずがで
きるので、感床の向䞊にも有効である。又、第
図に瀺す様に薄膜ず基䜓の間に反射局を蚭
けるこずができる。この反射局は、アルミニり
ム、銀、クロムなどの反射性金属の蒞着局又はラ
ミネヌト局ずするこずができる。
The photothermal conversion recording medium of the present invention is obtained by forming the aforementioned thin film 2 (electromagnetic radiation sensitive layer) on the substrate 1 used as a support, but various auxiliary layers can be provided. For example, it is possible to use a substrate having a surface coating made of an inorganic or organic substance on the surface of the substrate 1 for the purpose of adjusting the thermal constant. Further, a protective layer made of a transparent material can be provided on the thin film 2, and this protective layer is effective in preventing mechanical damage and, by forming it with an appropriate thickness, can prevent reflection. Since it can be formed into a film, it is also effective in improving sensitivity. Also, the second
As shown in the figure, a reflective layer 3 can be provided between the thin film 2 and the substrate 1. This reflective layer 3 can be a vapor deposited layer or a laminate layer of a reflective metal such as aluminum, silver, or chromium.

又、本発明の光熱倉換蚘録媒䜓には特願昭57−
72374号明现曞に蚘茉のトラツク案内溝や番地指
定溝などの機胜をも぀プレグルヌブを圢成するこ
ずができる。
Furthermore, the photothermal conversion recording medium of the present invention has
It is possible to form a pregroove having a function such as a track guide groove or an address designation groove as described in the specification of No. 72374.

本発明の光熱倉換蚘録媒䜓は、第図に瀺す様
に薄膜に電磁攟射線、䟋えばガリりム−ヒ玠
−アルミニりム半導䜓レヌザ発振波長820n
、アルゎンガスレヌザ発振波長488.515n
、ヘリりム−ネオンガスレヌザ発振波長
632.8nその他可芖領域から赀倖領域に発振波
長を有するレヌザやキセノンフラツシナランプな
どの各皮短パルス発光ランプあるいは赀倖線ラン
プ光やヒヌタを照射あるいは接觊させるこずによ
぀おピツトを圢成するこずができる。このピツ
ト圢成郚は、ピツト未圢成郚の反射率ず異な぀お
おり、埓぀お、䟋えば電子攟射線をトラツクに沿
぀お走査するこずによ぀おピツトを圢成し、この
ピツト圢成郚ずピツト未圢成郚に前述のトラツク
に沿぀お䜎出力レヌザを走査し、その反射率差を
フオトデむテクタヌによ぀お読み取るこずができ
る。
The photothermal conversion recording medium of the present invention, as shown in FIG.
m), argon gas laser (oscillation wavelength: 488.515n)
m), helium-neon gas laser (oscillation wavelength:
632.8 nm) In addition, the pits 5 can be formed by irradiating or contacting with various short pulse light emitting lamps such as a laser having an oscillation wavelength from the visible region to the infrared region, a xenon flash lamp, infrared lamp light, or a heater. can. The reflectance of the pit-formed portion is different from that of the non-pit-formed portion. Therefore, by scanning electron radiation along a track, for example, a pit is formed, and the pit-formed portion and the pit-free portion are separated. A low power laser is scanned along the aforementioned track and the difference in reflectance can be read by a photodetector.

本発明の別の具䜓䟋では、光熱倉換蚘録方匏の
液晶玠子ずしお適甚するこずができる。䟋えば、
第図に本発明の光熱倉換蚘録媒䜓の䟋である
液晶玠子の断面図を瀺す様に、液晶組成物
ずしおは、前述の䞀般匏で衚わされるアズ
レニりム塩化合物を溶解した液晶が甚いられる。
本発明の光熱倉換蚘録媒䜓に適甚される液晶玠子
に甚いる液晶はスメクチツク液晶が適しおおり、
特に正の誘電異方性をも぀スメクチツク液晶の
盞又は盞が適しおいる。かかるスメクチツク液
晶は、レヌザビヌムで局郚的に加熱されるたでは
ホメオトロピツク組織のスメクチツク盞に配列さ
れおおり、枩床䞊昇に䌎ないホメオトロピツク組
織のスメクチツク盞→ネオマチツク盞→む゜トロ
ピツク盞ず盞倉化するこずができる。次いで、む
゜トロピツク盞から急冷状態でスメクチツク盞ぞ
盞倉化させるず光散乱特性をも぀フオヌカルコニ
ツク組織のスメクチツク盞が圢成されるこずにな
る。埓぀お、レヌザビヌムを照射しお液晶玠子䞭
のスメクチツク盞を局郚的にむ゜トロピツク盞た
で加熱し、その埌急冷するずその個所がフオヌカ
ルコニツク組織のスメクチツク盞ずなり、この状
態が光散乱特性をも぀おいるので、前充のレヌザ
ビヌムによる光信号走査によ぀お静止画像のパタ
ヌンを圢成するこずができる。
In another specific example of the present invention, it can be applied as a liquid crystal element using a photothermal conversion recording method. for example,
As shown in FIG. 4, a cross-sectional view of a liquid crystal element which is an example of the photothermal conversion recording medium of the present invention, the liquid crystal composition 108
As the liquid crystal, a liquid crystal in which an azulenium salt compound represented by the above-mentioned general formula [] is dissolved is used.
Smectic liquid crystal is suitable for the liquid crystal used in the liquid crystal element applied to the photothermal conversion recording medium of the present invention.
In particular, the A of smectic liquid crystals with positive dielectric anisotropy
Phase or C phase is suitable. Such smectic liquid crystals are arranged in the smectic phase of a homeotropic structure until they are locally heated by a laser beam, and can undergo a phase change from the smectic phase of the homeotropic structure to the neomatic phase to the isotropic phase as the temperature rises. . Next, when the phase is changed from the isotropic phase to the smectic phase under rapid cooling, a smectic phase with a focal conic structure having light scattering properties is formed. Therefore, when the smectic phase in a liquid crystal element is locally heated to an isotropic phase by irradiation with a laser beam, and then rapidly cooled, the area becomes a smectic phase of a focal conic structure, and this state has light scattering properties. Therefore, a still image pattern can be formed by scanning the optical signal with the preceding laser beam.

本発明の液晶玠子で甚いる正の誘電異方性をも
぀スメクチツク盞を圢成しうる化合物ずしおは、
䟋えば特開昭56−150030号公報、特開昭57−
40429号公報、特開昭57−51779号公報などに蚘茉
された化合物を甚いるこずができる。
Compounds capable of forming a smectic phase with positive dielectric anisotropy used in the liquid crystal element of the present invention include:
For example, JP-A-56-150030, JP-A-57-
Compounds described in JP-A-40429, JP-A-57-51779, etc. can be used.

前述の䞀般匏で衚わされるアズレニりム
塩化合物は、液晶に察しお0.1重量以䞊、奜た
しくは重量〜重量の範囲で液晶組成物
䞭に含有するこずができる。
The azulenium salt compound represented by the general formula [] is added to the liquid crystal composition 1 in an amount of 0.1% by weight or more, preferably in the range of 1% to 3% by weight based on the liquid crystal.
08.

又、本発明の液晶玠子は、正の誘電異方性をも
぀スメクチツク液晶ずコレステリツク液晶の混合
液晶を甚いるこずも可胜である。コレステリツク
液晶は液晶組成物䞭に0.5重量〜15重量
の範囲、奜たしくは重量〜重量の範囲
で含有するこずが適しおいる。
Further, the liquid crystal element of the present invention can also use a mixed liquid crystal of a smectic liquid crystal and a cholesteric liquid crystal having positive dielectric anisotropy. The cholesteric liquid crystal is suitably contained in the liquid crystal composition 108 in an amount of 0.5% to 15% by weight, preferably 1% to 5% by weight.

本発明で甚いうるコレステリツク液晶ずしお
は、コレステリルクロラむド、コレステリルブロ
マむド、コレステリルペヌダむド、コレステリル
ニトレヌト、コレステリルクロロデカノ゚ヌト、
コレステリルブチレヌト、コレステリルカプレヌ
ト、コレステリルオレヌト、コレステリルリノレ
ヌト、コレステリルラりレヌト、コレステリルミ
リステヌト、コレステリルヘプチカルバメヌト、
コレステリルデシル゚ヌテル、コレステリルラり
リル゚ヌテル、コレステリルオレむル゚ヌテルな
どのコレステリル化合物が挙げられる。
Cholesteric liquid crystals that can be used in the present invention include cholesteryl chloride, cholesteryl bromide, cholesteryl iodide, cholesteryl nitrate, cholesteryl chlorodecanoate,
Cholesteryl butyrate, cholesteryl caprate, cholesteryl oleate, cholesteryl linoleate, cholesteryl laurate, cholesteryl myristate, cholesteryl heptycarbamate,
Examples include cholesteryl compounds such as cholesteryl decyl ether, cholesteryl lauryl ether, and cholesteryl oleyl ether.

かかる混合液晶を甚いた液晶玠子は、レヌザビ
ヌムの局郚的な加熱によりホメオトロピツクのス
メクチツク盞からむ゜トロピツク盞ぞ盞倉化を生
じ、これを急冷するず前述ず同様にフオヌカルコ
ニツク組織のスメクチツク盞を圢成するこずがで
きる。
A liquid crystal element using such a mixed liquid crystal undergoes a phase change from a homeotropic smectic phase to an isotropic phase by local heating with a laser beam, and when this is rapidly cooled, a focal conic structure smectic phase is formed as described above. Can be done.

前述の劂き方匏で蚘録された液晶玠子は、液晶
組成物を党面に䟋えばヒヌタにより加熱し
おむ゜トロピツク盞ぞ盞倉化させた埌に、液晶玠
子を構成しおいる基板ず䟋えば、
透明ガラス板やアクリル板などのプラスチツク
板に蚭けた電極ずの間に適圓な盎
流又は亀流を印加するずずもに埐冷するこずによ
぀お、む゜トロピツク盞→ネマチツク盞→スメク
チツク盞ぞ盞倉化を生じるこずができる。この
際、ネマチツク盞で液晶が正の誘電異方性を有し
おいるために電界方向にネマチツク液晶が配列
し、さらに冷华するずホメオトロピツク組織のス
メクチツク盞又は盞が圢成されお、曞き蟌み
画像パタヌンが消去される。電極ず
は、䞀般匏に酞化むンゞりム、酞化錫あるいは
ITOIndium Tin Oxideの透明導電膜によ぀
お埗られ、又必芁に応じおアルミニりム、クロ
ム、銀やニツケルなどの金属導電膜によ぀お埗ら
れる。この電極ずは、基板ず
の党面に亘぀お被膜されおいるこずが望た
しく、必ずしも所定のパタヌン圢状あるいはマト
リツクス電極構造ずする必芁がない。しかし、所
望に応じお所定のパタヌン圢状あるいはマトリツ
クス電極構造に蚭蚈するこずも可胜である。
A liquid crystal element recorded by the above-mentioned method is produced by heating the entire surface of the liquid crystal composition 108 using, for example, a heater to change the phase to an isotropic phase, and then applying the liquid crystal composition 108 to the substrates 101 and 102 (for example,
By applying an appropriate direct current or alternating current between the electrodes 103 and 104 provided on a plastic plate (such as a transparent glass plate or an acrylic plate) and slowly cooling it, a phase change occurs from an isotropic phase to a nematic phase to a smectic phase. can occur. At this time, since the liquid crystal has a positive dielectric anisotropy in the nematic phase, the nematic liquid crystal is aligned in the direction of the electric field, and when it is further cooled, a smectic A phase or C phase with a homeotropic structure is formed, and the written image pattern is formed. will be deleted. Electrodes 103 and 104
In the general formula, indium oxide, tin oxide or
It can be obtained with a transparent conductive film of ITO (Indium Tin Oxide), and if necessary, with a conductive film of metal such as aluminum, chromium, silver, or nickel. The electrodes 103 and 104 are desirably coated over the entire surfaces of the substrates 101 and 102, and do not necessarily have to have a predetermined pattern shape or matrix electrode structure. However, it is also possible to design a predetermined pattern shape or matrix electrode structure as desired.

本発明の液晶玠子は、それぞれの電極ず
の䞊に絶瞁性物質の被膜からなる配向制埡
膜ずを蚭けるこずができる。この配
向制埡膜ずは、これらの臚界面で接
する液晶組成物の配列方向を所望の状態に
制埡するこずができる衚面構造を有しおいる。
又、この配向制埡膜ずは液晶組成物
を通しお流れる電流の発生を防止するこず
ができる絶瞁膜ずしおも機胜する。この皮の配向
制埡膜ずは、䟋えば䞀酞化珪玠、二
酞化珪玠、酞化アルミニりム、ゞルコニア、フツ
化マグネシりム、酞化セリりム、フツ化セリり
ム、シリコン窒化物、シリコン炭化物、ホり玠窒
化物、ポリビニルアルコヌル、ポリむミド、ポリ
アミドむミド、ポリ゚ステルむミド、ポリパラキ
シレリン、ポリ゚ステル、ポリカヌボネヌト、ポ
リビニルアセタヌル、ポリ塩化ビニル、ポリアミ
ド、ポリスチレン、セルロヌス暹脂、メラミン暹
脂、ナリア暹脂やアクリル暹脂、オルガノシロキ
サン、ポリフツ化゚チレンなどの絶瞁性物質を蒞
着法、浞挬塗垃法、スピンナヌ塗垃法あるいはス
プレヌ塗垃法により被膜圢成するこずによ぀お埗
られる。
In the liquid crystal element of the present invention, alignment control films 106 and 107 made of insulating material films can be provided on the electrodes 103 and 104, respectively. The alignment control films 106 and 107 have a surface structure capable of controlling the alignment direction of the liquid crystal composition 108 that is in contact with these critical surfaces to a desired state.
The alignment control films 106 and 107 also function as insulating films that can prevent the generation of current flowing through the liquid crystal composition 108. This type of alignment control films 106 and 107 are made of, for example, silicon monoxide, silicon dioxide, aluminum oxide, zirconia, magnesium fluoride, cerium oxide, cerium fluoride, silicon nitride, silicon carbide, boron nitride, polyvinyl alcohol, polyimide. Insulating materials such as polyamideimide, polyesterimide, polyparaxylerin, polyester, polycarbonate, polyvinyl acetal, polyvinyl chloride, polyamide, polystyrene, cellulose resin, melamine resin, urea resin, acrylic resin, organosiloxane, polyethylene fluoride, etc. It can be obtained by forming a film using a vapor deposition method, a dip coating method, a spinner coating method, or a spray coating method.

配向制埡膜ずは、所定の曞き蟌み
方匏に応じお、その衚面を垃、玙やビロヌドなど
によりラビングするか、あるいは被膜圢成時に斜
め蒞着法を甚いるこずによ぀お、液晶組成物
をホモゞニアス配向させる衚面構造をも぀こず
ができ、あるいはその衚面を䟋えば特開昭50−
36150号公報に蚘茉されたバヌフルオロアルキル
基をも぀シラン化合物、特開昭50−50947号公報
に蚘茉されたアルキルトリアルコキシシラン、特
開昭50−63955号公報に蚘茉されたテトラアルコ
キシシランなどの化合物により凊理するこずによ
぀お、液晶組成物をホメオトロピツク配向
させる衚面構造をも぀こずができる。
The alignment control films 106 and 107 are coated with the liquid crystal composition 10 by rubbing the surface with cloth, paper, velvet, etc., or by using an oblique vapor deposition method when forming the film, depending on a predetermined writing method.
It is possible to have a surface structure that homogeneously aligns 8, or the surface can be
Silane compounds having a barfluoroalkyl group described in JP-A No. 36150, alkyltrialkoxysilanes described in JP-A-50-50947, tetraalkoxysilanes described in JP-A-50-63955, etc. By treating with a compound, the liquid crystal composition 108 can have a surface structure that provides homeotropic alignment.

配向制埡膜ずは、䜿甚した絶瞁性
物質の皮類によ぀お、その最適な膜厚が異なる
が、䞀般的に100Å〜1Όの範囲、奜たしくは500
Å〜2000Åの範囲に定めるこずが適しおおり、さ
らにこの配向制埡膜ずが反射防止膜
ずしおも䜜甚する様な膜厚に蚭定しおおくこずが
望たしい。
The optimum film thickness of the alignment control films 106 and 107 varies depending on the type of insulating material used, but is generally in the range of 100 Što 1 Ό, preferably 500 Što 1 Ό.
It is suitable to set the thickness in the range of Å to 2000 Å, and it is also desirable to set the thickness so that the alignment control films 106 and 107 also function as antireflection films.

又、本発明の液晶玠子は図瀺する劂く背面方向
からレヌザビヌムを照射するこずによ぀お
前述の静止画像を圢成し、正面方向から自然光、
ハロゲンランプ光、キセノンランプ光、蛍光灯光
などの芳察光を玠子䞭に入射させお、この
光線をコヌルドミラヌからの反射光ずし
お、前述の静止画像を芳察するこずができる。こ
のコヌルドミラヌは、䞀般に可芖光に察し
おは十分に高い反射率を有し、600n以䞊の長
波長光に察しおは高い透過率特性を有しおいる。
具䜓的には、GeMgF21/4λCeO21/4
λMgF21/4λCeO21/4λからなる倚
局膜が知られおいる。しかし、本発明ではコヌル
ドミラヌの䜿甚を省略するこずもできる。
又、本発明の玠子はコヌルドフむルタヌ図瀺せ
ずを電極ず配向制埡膜の間に蚭け
るこずもできる。このコヌルドフむルタヌは、可
芖光に察しおは十分に高い透過率を有し、又長波
長光に察しおは十分に高い反射率特性を有しおい
る。
Further, the liquid crystal element of the present invention forms the above-mentioned still image by irradiating the laser beam 110 from the rear direction as shown in the figure, and also receives natural light and light from the front direction.
The above-mentioned still image can be observed by making observation light 109 such as halogen lamp light, xenon lamp light, or fluorescent lamp light enter the element and using this light beam as reflected light from the cold mirror 105. This cold mirror 105 generally has sufficiently high reflectance for visible light and high transmittance for long wavelength light of 600 nm or more.
Specifically, Ge/MgF 2 (1/4λ)/CeO 2 (1/4
A multilayer film consisting of λ)/MgF 2 (1/4λ)/CeO 2 (1/4λ) is known. However, in the present invention, the use of cold mirror 105 can also be omitted.
Further, in the element of the present invention, a cold filter (not shown) can be provided between the electrode 103 and the alignment control film 106. This cold filter has a sufficiently high transmittance for visible light and a sufficiently high reflectance for long wavelength light.

実斜䟋 以䞋、本発明を実斜䟋に埓぀お詳现に説明する
が、本発明はこれに限定されるものではない。
[Examples] Hereinafter, the present invention will be explained in detail with reference to Examples, but the present invention is not limited thereto.

実斜䟋  ニトロセルロヌス溶液ダむセル化孊工業(æ ª)
補オヌハヌレスラツカヌニトロセルロヌス25
重量のメチル゚チルケトン溶液12重量郚、前
述の化合物No.(1)の化合物重量郚およびメチル゚
チルケトン70重量郚をボヌルミルで十分に混合し
た。この混合した液を盎埄30cmのデむスク状アル
ミ蒞着ガラス板䞊にスピンナヌコヌテむング法に
より塗垃した埌、也燥しお0.6m2の蚘録局を
埗た。
Example 1 Nitrocellulose solution (Daicel Chemical Industries, Ltd.)
Manufactured by Ohares Latzker: Nitrocellulose 25
12 parts by weight of methyl ethyl ketone solution), 3 parts by weight of the aforementioned compound No. (1), and 70 parts by weight of methyl ethyl ketone were thoroughly mixed in a ball mill. This mixed solution was applied onto a disk-shaped aluminum vapor-deposited glass plate with a diameter of 30 cm by a spinner coating method, and then dried to obtain a recording layer of 0.6 g/m 2 .

こうしお䜜成した光デむスク蚘録䜓をタヌンテ
ヌブル䞊に取り付け、タヌンテヌブルをモヌタで
1000rpmの回転を䞎えながら、スポツトサむズ
1.0ミクロンに集束した出力およびパルス
幅8MHzのガリりム−アルミニりム−ヒ玠半導䜓
レヌザ発振波長780nを蚘録局衚面にトラ
ツク状で走査しお蚘録を行な぀た。
The optical disk recording medium created in this way is mounted on a turntable, and the turntable is driven by a motor.
Spot size while giving 1000rpm rotation
Recording was carried out by scanning a gallium-aluminum-arsenic semiconductor laser (oscillation wavelength: 780 nm) on the surface of the recording layer in a track-like manner with an output of 5 mW and a pulse width of 8 MHz, which was focused to 1.0 microns.

この蚘録された光デむスクの衚面を走査型電子
顕埮鏡で芳察したずころ、鮮明なピツトが認めら
れた。たた、この光デむスクに䜎出力のガリりム
−アルミニりム−ヒ玠半導䜓レヌザを入射し、反
射光の怜知を行な぀たずころ、十分な比を
有する波圢が埗られた。
When the recorded surface of the optical disc was observed using a scanning electron microscope, clear pits were observed. Furthermore, when a low-output gallium-aluminum-arsenic semiconductor laser was incident on this optical disk and reflected light was detected, a waveform with a sufficient S/N ratio was obtained.

たた、蚘録埌、経時における耐久安定性を枬定
するために、前述の蚘録された蚘録媒䜓を枩床35
℃および盞察湿床95の匷制環境䞋に240時間攟
眮した埌、蚘録された蚘録媒䜓の衚面を前述ず同
様に顕埮鏡で芳察したが、耐久テスト前に芳察し
た時ず同様のピツトが認められた。たた、この蚘
録され䞔぀耐久テストされた蚘録媒䜓に䜎出力の
ガリりム−ヒ玠−アルミニりム半導䜓レヌザを入
射し、反射光の怜知を行な぀たずころ、十分に高
い比を有する波圢が埗られた。
In addition, in order to measure the durability stability over time after recording, the recorded recording medium was heated to 35°C.
After being left in a forced environment at ℃ and 95% relative humidity for 240 hours, the surface of the recorded recording medium was observed under a microscope in the same manner as described above, and pits similar to those observed before the durability test were observed. . Furthermore, when a low-power gallium-arsenic-aluminum semiconductor laser was incident on this recorded and durability-tested recording medium and the reflected light was detected, a waveform with a sufficiently high S/N ratio was obtained. Ta.

実斜䟋  前述の化合物No.(3)の化合物を実斜䟋ず同様の
方法で盎埄30cmのデむスク状アルミ蒞着ガラス板
の䞊にスピンナヌコヌテむング法により塗工しお
0.6m2の蚘録局を有する光デむスク蚘録䜓を
䜜成した。
Example 2 The above compound No. (3) was coated on a disk-shaped aluminum vapor-deposited glass plate with a diameter of 30 cm using the spinner coating method in the same manner as in Example 1.
An optical disc recording medium having a recording layer of 0.6 g/m 2 was prepared.

この光デむスク蚘録䜓に実斜䟋ず同様の方法
で情報を蚘録させおから再生したずころ、十分な
比を有する波圢が認められた。又情報を曞
き蟌みした埌の蚘録局面を走査型電子顕埮鏡で芳
察したずころ、鮮明なピツトが圢成されおいた。
たた、蚘録埌の耐久テストを実斜䟋ず同様の方
法で枬定したが、同様の結果が埗られた。
When information was recorded on this optical disk recording medium in the same manner as in Example 1 and then reproduced, a waveform with a sufficient S/N ratio was observed. Further, when the surface of the recording layer after information was written was observed with a scanning electron microscope, clear pits were found to have been formed.
Further, a durability test after recording was carried out in the same manner as in Example 1, and similar results were obtained.

実斜䟋  前述の化合物No.(6)の化合物を実斜䟋ず同様の
方法で盎埄30cmのデむスク状アルミ蒞着ガラス板
の䞊にスピンナヌコヌテむング法により塗工しお
0.6m2の蚘録局を有する光デむスク蚘録䜓を
䜜成した。
Example 3 The above-mentioned compound No. (6) was coated on a disk-shaped aluminum vapor-deposited glass plate with a diameter of 30 cm using the spinner coating method in the same manner as in Example 1.
An optical disc recording medium having a recording layer of 0.6 g/m 2 was prepared.

この光デむスク蚘録䜓に実斜䟋ず同様の方法
で情報を蚘憶させおから再生したずころ、十分な
比を有する波圢が認められた。又、情報を
曞き蟌みした埌の蚘録局面を走査型電子顕埮鏡で
芳察したずころ、鮮明なピツトが圢成されおい
た。たた、蚘録埌の耐久テストを実斜䟋ず同様
の方法で枬定したが同様の結果が埗られた。
When information was stored on this optical disk recording medium in the same manner as in Example 1 and then reproduced, a waveform with a sufficient S/N ratio was observed. Further, when the surface of the recording layer after information was written was observed with a scanning electron microscope, clear pits were found to have been formed. Further, a durability test after recording was carried out in the same manner as in Example 1, and similar results were obtained.

実斜䟋  前述の化合物No.(8)化合物を実斜䟋ず同様の方
法で盎埄30cmのデむスク状アルミ蒞着ガラス板の
䞊にスピンナヌコヌテむング法により塗工しお
0.8m2の蚘録局を有する光デむスク蚘録䜓を
䜜成した。
Example 4 The above compound No. (8) was coated on a disc-shaped aluminum vapor-deposited glass plate with a diameter of 30 cm using the spinner coating method in the same manner as in Example 1.
An optical disc recording medium having a recording layer of 0.8 g/m 2 was prepared.

この光デむスク蚘録䜓に実斜䟋ず同様の方法
で情報を蚘憶させおから再生したずころ、十分な
比を有する波圢が認められた。又、情報を
曞き蟌みした埌の蚘録局面を走査型電子顕埮鏡で
芳察したずころ、鮮明なピツトが圢成されおい
た。たた、蚘録埌の耐久テストを実斜䟋ず同様
の方法で枬定したが、同様の結果が埗られた。
When information was stored on this optical disk recording medium in the same manner as in Example 1 and then reproduced, a waveform with a sufficient S/N ratio was observed. Further, when the surface of the recording layer after information was written was observed with a scanning electron microscope, clear pits were found to have been formed. Further, a durability test after recording was carried out in the same manner as in Example 1, and similar results were obtained.

実斜䟋  前述の化合物No.(10)の化合物を実斜䟋ず同様の
方法で盎埄30cmのデむスク状アルミ蒞着ガラス板
の䞊にスピンナヌコヌテむング法により塗工しお
0.6m2の蚘録局を有する光デむスク蚘録䜓を
䜜成した。
Example 5 The above compound No. (10) was coated on a disc-shaped aluminum vapor-deposited glass plate with a diameter of 30 cm using the spinner coating method in the same manner as in Example 1.
An optical disc recording medium having a recording layer of 0.6 g/m 2 was prepared.

この光デむスク蚘録䜓に実斜䟋ず同様の方法
で情報を蚘憶させおから再生したずころ、十分な
比を有する波圢が認められた。又、情報を
曞き蟌みした埌の蚘録局面を走査型電子顕埮鏡で
芳察したずころ、鮮明なピツトが圢成されおい
た。たた、蚘録埌の耐久テストを実斜䟋ず同様
の方法で枬定したが、同様の結果が埗られた。
When information was stored on this optical disk recording medium in the same manner as in Example 1 and then reproduced, a waveform with a sufficient S/N ratio was observed. Further, when the surface of the recording layer after information was written was observed with a scanning electron microscope, clear pits were found to have been formed. Further, a durability test after recording was carried out in the same manner as in Example 1, and similar results were obtained.

実斜䟋  前述の化合物No.15の化合物を実斜䟋ず同
様の方法で盎埄30cmのデむスク状アルミ蒞着ガラ
ス板の䞊にスピンナヌコヌテむング法により塗工
しお0.8m2の蚘録局を有する光デむスク蚘録
䜓を䜜成した。
Example 6 The above-mentioned compound No. (15) was coated on a disk-shaped aluminum vapor-deposited glass plate with a diameter of 30 cm by spinner coating method in the same manner as in Example 1 to form a recording layer of 0.8 g/m 2 . An optical disc recording body having the following was created.

この光デむスク蚘録䜓に実斜䟋ず同様の方法
で情報を蚘憶させおから再生したずころ、十分な
比を有する波圢が認められた。又、情報を
曞き蟌みした埌の蚘録局面を走査型電子顕埮鏡で
芳察したずころ、鮮明なピツトが圢成されおい
た。たた、蚘録埌の耐久テストを実斜䟋ず同様
の方法で枬定したが、同様の結果が埗られた。
When information was stored on this optical disk recording medium in the same manner as in Example 1 and then reproduced, a waveform with a sufficient S/N ratio was observed. Further, when the surface of the recording layer after information was written was observed with a scanning electron microscope, clear pits were found to have been formed. Further, a durability test after recording was carried out in the same manner as in Example 1, and similar results were obtained.

実斜䟋  前述の化合物No.20の化合物を実斜䟋ず同
様の方法で盎埄30cmのデむスク状アルミ蒞着ガラ
ス板の䞊にスピンナヌコヌテむング法により塗工
しお0.6m2の蚘録局を有する光デむスク蚘録
䜓を䜜成した。
Example 7 The above-mentioned compound No. (20) was coated on a disk-shaped aluminum vapor-deposited glass plate with a diameter of 30 cm by spinner coating method in the same manner as in Example 1 to form a recording layer of 0.6 g/m 2 . An optical disc recording body having the following was created.

この光デむスク蚘録䜓に実斜䟋ず同様の方法
で情報を蚘憶させおから再生したずころ、十分な
比を有する波圢が認められた。又、情報を
曞き蟌みした埌の蚘録局面を走査型電子顕埮鏡で
芳察したずころ、鮮明なピツトが圢成されおい
た。たた、蚘録埌の耐久テストを実斜䟋ず同様
の方法で枬定したが、同様の結果が埗られた。
When information was stored on this optical disk recording medium in the same manner as in Example 1 and then reproduced, a waveform with a sufficient S/N ratio was observed. Further, when the surface of the recording layer after information was written was observed with a scanning electron microscope, clear pits were found to have been formed. Further, a durability test after recording was carried out in the same manner as in Example 1, and similar results were obtained.

実斜䟋  本発明玠子を甚いお衚瀺パタヌンを圢成した実
斜䟋を第図に瀺す。
Example 8 FIG. 5 shows an example in which a display pattern was formed using the device of the present invention.

前述の䞀般匏で衚わされる化合物のう
ち、化合物No.(1)の化合物をスメクチツク液晶
−シアノオクチルビプニル正の誘電
異方性をも぀に察しお重量の割合ずなる様
に溶解した。この際、液晶組成物をむ゜トロピツ
ク盞ずなるたで加熱しおから、前述の化合物を添
加し、この液を内壁面がホメオトロピツク配向凊
理されたセル䞭に泚入し、その埌埐冷するこずに
よ぀おホメオトロピツク組織をも぀スメクチツク
盞の液晶を圢成させた。
Among the compounds represented by the above general formula [], compound No. (1) was added in an amount of 2% by weight to smectic liquid crystal (4,4-cyanooctylbiphenyl; has positive dielectric anisotropy). It was dissolved in proportion. At this time, the liquid crystal composition is heated until it becomes an isotropic phase, the above-mentioned compound is added, and this liquid is injected into a cell whose inner wall surface has been subjected to a homeotropic alignment treatment. A structured smectic phase liquid crystal was formed.

液晶セルに画像を曞き蟌むために䜿甚す
るレヌザビヌムを発射するレヌザ発振噚
は、液晶䞭に含有させた前述の化合物の吞収効率
に察応した波長のものから遞択するこずができる
が、特にヘリりム−ネオンレヌザ、半導䜓レヌザ
あるいはYAGレヌザより発射された長波長のレ
ヌザビヌムあるいはアルゎンレヌザより発射され
た短波長のレヌザビヌムを甚いるこずができる。
レヌザ発振噚より発射したレヌザビヌム
は、倉調噚、スリツト、軞偏向噚
、軞偏向噚を通過しお倉調ず偏向
されおから、曞き蟌みレンズにより集光さ
れ、ダむクロむツクミラヌを介しお液晶玠
子の背面から照射される。前述の倉調噚
、軞偏向噚、軞偏向噚は、
駆動甚増幅噚を介しお信号源ず接続
しおおり、これによ぀おレヌザビヌムが制埡され
お、信号源からのデゞタル電気信号を光信
号に倉換する。この光信号によ぀お液晶玠子
に画像パタヌンが曞き蟌たれる。しかる埌に、
液晶玠子の呚蟺郚に取り付けたペルチ゚玠
子を電源により䜜動させお、急冷状
態ずなしお、液晶玠子を冷华し、フオヌカ
ルコニツク組織のスメクチツク盞を圢成させ、光
信号の照射された個所が光散乱状態ずな぀た画像
パタヌンが圢成された。この際、ペルチ゚玠子
は枩床コントロヌル噚により枩床コン
トロヌルされる。
A laser oscillator 202 that emits a laser beam used to write an image on the liquid crystal cell 201
can be selected from those with wavelengths corresponding to the absorption efficiency of the above-mentioned compounds contained in the liquid crystal, but in particular long-wavelength laser beams emitted from helium-neon lasers, semiconductor lasers, or YAG lasers, or argon A short wavelength laser beam emitted by a laser can be used.
A laser beam emitted from a laser oscillator 202 passes through a modulator 203, a slit 204, a Y-axis deflector 205, and an X-axis deflector 206, is modulated and deflected, is focused by a writing lens 208, and is focused by a dichroic mirror. The light is irradiated from the back side of the liquid crystal element 201 via the light source 209 . The aforementioned modulator 2
03, Y-axis deflector 205, X-axis deflector 206,
It is connected to a signal source 211 via a driving amplifier 210, which controls the laser beam and converts the digital electrical signal from the signal source 211 into an optical signal. This optical signal causes the liquid crystal element 20 to
An image pattern is written to 1. After that,
The Peltier element 212 attached to the periphery of the liquid crystal element 201 is activated by the power supply 213 to bring it into a rapid cooling state, thereby cooling the liquid crystal element 201 and forming a smectic phase of a focal conic structure. An image pattern was formed in which spots were in a light scattering state. At this time, Peltier element 2
12 is temperature controlled by a temperature controller 214.

この画像パタヌンは、液晶玠子の前面に
配眮した照明源を点灯するこずによ぀お、
芳察するこずができる。
This image pattern is created by lighting the illumination source 215 placed in front of the liquid crystal element 201.
can be observed.

次いで、前述の画像パタヌンを消去するには、
液晶玠子に蚭けた透明ヒヌタ䟋え
ば、酞化むンゞりム膜、酞化錫膜、ITO膜を枩
床コントロヌル噚を介したヒヌタ甚電源
により加熱し、液晶盞からむ゜トロピツク盞
ぞ盞倉化を生じさせる。しかる埌、液晶玠子
に蚭けた電極ずの間に亀流電源
より電圧を印加しながら、液晶玠子を
埐冷しお、ホメオトロピツク組織のスメクチツク
盞を圢成させた。この結果、曞き蟌たれた画像パ
タヌンが消去された。
Then, to erase the aforementioned image pattern,
A transparent heater 216 (for example, an indium oxide film, a tin oxide film, an ITO film) provided on the liquid crystal element 201 is connected to a heater power source 2 via a temperature controller 217.
18 to cause a phase change from a liquid crystal phase to an isotropic phase. After that, the liquid crystal element 20
AC power supply 2 between electrodes 219 and 220 provided in 1
The liquid crystal element 201 was slowly cooled while applying a voltage from 21 to form a smectic phase having a homeotropic structure. As a result, the written image pattern was erased.

比范䟋  実斜䟋に斌お埗た化合物No.(1)の化合物に倉え
お䞋蚘の構造の化合物を甚いたほかは、実斜䟋
ず同様にしお光デむスク蚘録䜓を䜜成した。こう
しお䜜成した光デむスク蚘録䜓に実斜䟋ず同様
にしお蚘録を行い蚘録された光デむスク衚面を走
査型電子顕埮鏡で芳察したずころ、鮮明なピツト
が認められた。たたこの光デむスクに䜎出力のガ
リりム−アルミニりム−ヒ玠半導䜓レヌザヌを入
射し反射光の怜知を行぀たずころ、十分な
比を有する波圢が埗られた。
Comparative Example 1 Example 1 except that a compound with the following structure was used instead of compound No. (1) obtained in Example 1.
An optical disk recording medium was prepared in the same manner as above. Recording was performed on the optical disk recording body thus prepared in the same manner as in Example 1, and when the recorded optical disk surface was observed with a scanning electron microscope, clear pits were observed. Furthermore, when a low-power gallium-aluminum-arsenic semiconductor laser was incident on this optical disk and the reflected light was detected, a sufficient S/N ratio was obtained.
A waveform with a ratio was obtained.

䞀方、経時における耐久安定性を枬定するため
に実斜䟋ず同様の条件䞋に前述の、蚘録された
光デむスクを攟眮した。
On the other hand, in order to measure the durability stability over time, the above-mentioned recorded optical disc was left under the same conditions as in Example 1.

この光デむスク衚面を顕埮鏡で芳察したずこ
ろ、耐久テスト前に芳察したずきず同様のピツト
が認められたが、この光デむスクに䜎出力のガリ
りム−アルミニりム−ヒ玠半導䜓レヌザヌを入射
し反射光の怜知を行぀たずころ実斜䟋に比范し
お比の倀の䜎䞋が認められた。
When the surface of this optical disk was observed with a microscope, pits similar to those observed before the durability test were observed, but a low-power gallium-aluminum-arsenic semiconductor laser was incident on this optical disk and the reflected light was detected. As a result, a decrease in the S/N ratio value was observed compared to Example 1.

発明の効果 本発明による効果を列挙するず䞋蚘のずおりで
ある。
[Effects of the Invention] The effects of the present invention are listed below.

本発明の光熱倉換蚘録媒䜓は、薄膜の電磁攟射
線感応局が電磁攟射線に察しお吞収効率が倧き
く、䜎い゚ネルギヌ密床のヘリりム−ネオンガス
レヌザやキセノンフラツシナランプによる蚘録が
可胜で、しかも長波長偎に発振波長をも぀半導䜓
レヌザによる蚘録にも有効である。又、比
が高く、再生効率が良奜である。さらに、本発明
のアズレニりム塩化合物は埓来知られおいるアズ
レニりム塩化合物に比范しお優れた熱安定性を有
する。
The photothermal conversion recording medium of the present invention has a thin electromagnetic radiation sensitive layer that has a high absorption efficiency for electromagnetic radiation, and enables recording with a low energy density helium-neon gas laser or xenon flash lamp, and moreover, on the long wavelength side. It is also effective for recording using a semiconductor laser having an oscillation wavelength. Furthermore, the S/N ratio is high and the regeneration efficiency is good. Furthermore, the azulenium salt compound of the present invention has superior thermal stability compared to conventionally known azulenium salt compounds.

又、本発明の光熱倉換蚘録媒䜓に係わる液晶玠
子は、倧画面デむスプレむずしお応甚するこずが
可胜であり、又所定の情報を含む光信号をトラツ
クに沿぀お走査しおピツトを圢成する蚘録方匏の
光デむスクシステムにも応甚するこずができる。
Further, the liquid crystal element related to the photothermal conversion recording medium of the present invention can be applied as a large screen display, and can also be used in a recording method in which optical signals containing predetermined information are scanned along a track to form pits. It can also be applied to optical disk systems.

【図面の簡単な説明】[Brief explanation of drawings]

第図および第図は各々本発明の光デむスク
甚光熱倉換蚘録媒䜓の断面図である。第図は、
光熱倉換蚘録媒䜓の実斜態様を瀺す説明図であ
る。第図は、本発明の光熱倉換蚘録媒䜓の䟋
を瀺す液晶玠子の断面図である。第図は、本発
明の液晶玠子を甚いた衚瀺方匏の䟋を衚わす説
明図である。 基䜓、薄膜、反射局、電磁攟
射線、ピツト、基板、
電極、コヌルドミラヌ、
配向制埡膜、液晶組成
物、芳察光、レヌザビヌム。
1 and 2 are sectional views of the photothermal conversion recording medium for optical disks of the present invention, respectively. Figure 3 shows
FIG. 2 is an explanatory diagram showing an embodiment of a photothermal conversion recording medium. FIG. 4 is a cross-sectional view of a liquid crystal element showing an example of the photothermal conversion recording medium of the present invention. FIG. 5 is an explanatory diagram showing one example of a display method using the liquid crystal element of the present invention. 1: Substrate, 2: Thin film, 3: Reflective layer, 4: Electromagnetic radiation, 5: Pit, 101, 102: Substrate, 10
3,104: Electrode, 105: Cold mirror, 1
06,107: Orientation control film, 108: Liquid crystal composition, 109: Observation light, 110: Laser beam.

Claims (1)

【特蚱請求の範囲】  䞋蚘䞀般匏で衚わされるアズレニりム
塩化合物を含有するこずを特城ずする光熱倉換蚘
録媒䜓。 䞀般匏 䜆し、䞀般匏においお、R1、R2、R3、
R4、R5、R6およびR7は氎玠原子、ハロゲン原子
又は䟡の有機残基のいずれか䞀皮、又はR1ず
R2、R2ずR3、R3ずR4、R4ずR5、R5ずR6および
R6ずR7の組合せのうち、少なくずも぀の組合
せで圢成された眮換又は未眮換の瞮合環を衚わ
す。R8およびR9は眮換もしくは未眮換のアルキ
ル基、アリヌル基もしくはアラルキル基のいずれ
か䞀皮、又はR8ずR9で窒玠原子ずずもに圢成さ
れた環を衚わす。Ar1およびAr2は眮換もしくは
未眮換のアリヌレン基を、 はアニオン残基を
衚わす。  前蚘光熱倉換蚘録媒䜓が基䜓䞊に䞋蚘䞀般匏
で衚わされるアズレニりム塩化合物を含有
する被膜を圢成しおなる特蚱請求の範囲第項蚘
茉の光熱倉換蚘録媒䜓。 䞀般匏 䜆し、䞀般匏においお、R1、R2、R3、
R4、R5、R6およびR7は氎玠原子、ハロゲン原子
又は䟡の有機残基のいずれか䞀皮、又はR1ず
R2、R2ずR3、R3ずR4、R4ずR5、R5ずR6および
R6ずR7の組合せのうち、少なくずも぀の組合
せで圢成された眮換又は未眮換の瞮合環を衚わ
す。R8およびR9は眮換もしくは未眮換のアルキ
ル基、アリヌル基もしくはアラルキル基のいずれ
か䞀皮、又はR8ずR9で窒玠原子ずずもに圢成さ
れた環を衚わす。Ar1およびAr2は眮換もしくは
未眮換のアリヌレン基を、 はアニオン残基を
衚わす。  前蚘光熱倉換蚘録媒䜓が䞋蚘䞀般匏で
衚わされるアズレニりム塩化合物を含有する液晶
組成物を有する液晶玠子からなる特蚱請求の範囲
第項蚘茉の光熱倉換蚘録媒䜓。 䞀般匏 䜆し、䞀般匏においお、R1、R2、R3、
R4、R5、R6およびR7は氎玠原子、ハロゲン原子
又は䟡の有機残基のいずれか䞀皮、又はR1ず
R2、R2ずR3、R3ずR4、R4ずR5、R5ずR6および
R6ずR7の組合せのうち、少なくずも぀の組合
せで圢成された眮換又は未眮換の瞮合環を衚わ
す。R8およびR9は眮換もしくは未眮換のアルキ
ル基、アリヌル基もしくはアラルキル基のいずれ
か䞀皮、又はR8ずR9で窒玠原子ずずもに圢成さ
れた環を衚わす。Ar1およびAr2は眮換もしくは
未眮換のアリヌレン基を、 はアニオン残基を
衚わす。
[Scope of Claims] 1. A photothermal conversion recording medium characterized by containing an azulenium salt compound represented by the following general formula []. General formula [] [However, in the general formula [], R 1 , R 2 , R 3 ,
R 4 , R 5 , R 6 and R 7 are hydrogen atoms, halogen atoms, monovalent organic residues, or R 1 and
R 2 , R 2 and R 3 , R 3 and R 4 , R 4 and R 5 , R 5 and R 6 and
Represents a substituted or unsubstituted condensed ring formed by at least one combination of R 6 and R 7 . R 8 and R 9 represent any one of a substituted or unsubstituted alkyl group, aryl group, or aralkyl group, or a ring formed by R 8 and R 9 together with a nitrogen atom. Ar 1 and Ar 2 represent substituted or unsubstituted arylene groups, and Z represents an anion residue. 2. The photothermal conversion recording medium according to claim 1, wherein the photothermal conversion recording medium is formed by forming a coating containing an azulenium salt compound represented by the following general formula [] on a substrate. General formula [] [However, in the general formula [], R 1 , R 2 , R 3 ,
R 4 , R 5 , R 6 and R 7 are hydrogen atoms, halogen atoms, monovalent organic residues, or R 1 and
R 2 , R 2 and R 3 , R 3 and R 4 , R 4 and R 5 , R 5 and R 6 and
Represents a substituted or unsubstituted condensed ring formed by at least one combination of R 6 and R 7 . R 8 and R 9 represent any one of a substituted or unsubstituted alkyl group, aryl group, or aralkyl group, or a ring formed by R 8 and R 9 together with a nitrogen atom. Ar 1 and Ar 2 represent substituted or unsubstituted arylene groups, and Z represents an anion residue. 3. The photothermal conversion recording medium according to claim 1, wherein the photothermal conversion recording medium comprises a liquid crystal element having a liquid crystal composition containing an azulenium salt compound represented by the following general formula []. General formula [] [However, in the general formula [], R 1 , R 2 , R 3 ,
R 4 , R 5 , R 6 and R 7 are any one of a hydrogen atom, a halogen atom or a monovalent organic residue, or R 1 and
R 2 , R 2 and R 3 , R 3 and R 4 , R 4 and R 5 , R 5 and R 6 and
Represents a substituted or unsubstituted condensed ring formed by at least one combination of R 6 and R 7 . R 8 and R 9 represent any one of a substituted or unsubstituted alkyl group, aryl group, or aralkyl group, or a ring formed by R 8 and R 9 together with a nitrogen atom. Ar 1 and Ar 2 represent substituted or unsubstituted arylene groups, and Z represents an anion residue. ]
JP59228901A 1984-07-18 1984-11-01 Photothermal conversion type recording medium Granted JPS61108584A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59228901A JPS61108584A (en) 1984-11-01 1984-11-01 Photothermal conversion type recording medium
US06/753,873 US4738908A (en) 1984-07-18 1985-07-11 Photothermal transducing type of recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59228901A JPS61108584A (en) 1984-11-01 1984-11-01 Photothermal conversion type recording medium

Publications (2)

Publication Number Publication Date
JPS61108584A JPS61108584A (en) 1986-05-27
JPH0257030B2 true JPH0257030B2 (en) 1990-12-03

Family

ID=16883631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59228901A Granted JPS61108584A (en) 1984-07-18 1984-11-01 Photothermal conversion type recording medium

Country Status (1)

Country Link
JP (1) JPS61108584A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103087296B (en) * 2013-01-29 2015-07-29 倍旊倧孊 A kind of linear azobenzene liquid liquid crystal high polymer material and preparation method thereof

Also Published As

Publication number Publication date
JPS61108584A (en) 1986-05-27

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