JPH0257011A - Over-current protecting circuit for igbt - Google Patents
Over-current protecting circuit for igbtInfo
- Publication number
- JPH0257011A JPH0257011A JP20858788A JP20858788A JPH0257011A JP H0257011 A JPH0257011 A JP H0257011A JP 20858788 A JP20858788 A JP 20858788A JP 20858788 A JP20858788 A JP 20858788A JP H0257011 A JPH0257011 A JP H0257011A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- current
- igbt
- over
- overcurrent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 claims abstract description 14
- 238000012544 monitoring process Methods 0.000 abstract description 6
- 230000000630 rising effect Effects 0.000 abstract description 6
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003708 edge detection Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229940035289 tobi Drugs 0.000 description 1
- NLVFBUXFDBBNBW-PBSUHMDJSA-N tobramycin Chemical compound N[C@@H]1C[C@H](O)[C@@H](CN)O[C@@H]1O[C@H]1[C@H](O)[C@@H](O[C@@H]2[C@@H]([C@@H](N)[C@H](O)[C@@H](CO)O2)O)[C@H](N)C[C@@H]1N NLVFBUXFDBBNBW-PBSUHMDJSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
Landscapes
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、インバータなどの電力変換装置に使用される
I G B T (Insulated Gate B
ipolarTrans is tor)を短絡事故な
どによって生しる過電流から保護する過電流保護回路に
関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention is applied to IGBT (Insulated Gate B) used in power conversion devices such as inverters.
The present invention relates to an overcurrent protection circuit that protects an ipolartransistor from overcurrent caused by a short circuit or the like.
従来、この種の過電流保護回路としてI GBTのコレ
クタ・エミッタ間電圧の増大を検出することにより過電
流を検知し、ゲートしゃ断してIGBTを保護する方法
が採られている。Conventionally, as this type of overcurrent protection circuit, a method has been adopted in which an overcurrent is detected by detecting an increase in the voltage between the collector and emitter of the IGBT, and the gate is cut off to protect the IGBT.
第5図はその一例を示すもので、図中lはIGBT3の
ゲート駆動回路、2は抵抗器、4は過電流保護回路であ
る。この過電流保護回路4ば、IGBT3のコレクタ・
エミッタ間電圧を監視する電圧監視回路5と、この電圧
監視回路5からの出力を受け、一定時間遅れで出力する
タイマー回路6と、タイマー回路6の出力でIGBT3
のゲートしゃ断を行うトランジスタ8と抵抗器7との組
合せで構成される。第6図は、第5図に示す回路の各部
の動作波形を示す。FIG. 5 shows an example of this. In the figure, 1 is a gate drive circuit for the IGBT 3, 2 is a resistor, and 4 is an overcurrent protection circuit. This overcurrent protection circuit 4 is connected to the collector of IGBT3.
A voltage monitoring circuit 5 that monitors the emitter voltage, a timer circuit 6 that receives the output from the voltage monitoring circuit 5 and outputs it with a certain time delay, and an IGBT 3 that uses the output of the timer circuit 6.
It is composed of a combination of a transistor 8 and a resistor 7, which performs gate cutoff. FIG. 6 shows operating waveforms of each part of the circuit shown in FIG. 5.
第6図において示すように、入力信号の立下がり直前で
過電流が発生した場合は、過電流保護回路が動作する前
に、ゲートがオフとなり、従って、過電流の流れている
期間は過電流の発生タイミングによってまちまちとなる
。As shown in Figure 6, if an overcurrent occurs just before the input signal falls, the gate is turned off before the overcurrent protection circuit operates, and therefore, the overcurrent protection circuit is turned off while the overcurrent is flowing. It varies depending on the timing of occurrence.
ところで、I GBT3を短絡などによって生じろ過電
流から保護するには、素子が耐え得る範囲内で過電流を
しゃ断しなければならない。素子の耐量は短時間である
が、継続時間が許容されるエネルギーによる破壊と、ラ
ッチアップ耐量により決まる。後者は、最終的には熱破
壊に至るが、この原因となるラッチアップは瞬時でも電
流が許容値を越えると発生ずる(以下、この許容値をう
・ノチアップ電流(1、)と呼ぶ。)
一方、電力変換装置における短絡事故時にICBT3に
流れる電流は第7図、第8図に示すように、尖頭値に達
した後、時間の経過に伴い減少する傾向を示す。第7図
中14は直流電源、15は配線インダクタンスである。By the way, in order to protect the IGBT 3 from a filtering current caused by a short circuit or the like, it is necessary to cut off the overcurrent within a range that the element can withstand. The withstand capability of the device is short-term, and the duration is determined by the allowable energy breakdown and the latch-up capability. The latter will eventually lead to thermal breakdown, but the latch-up that causes this occurs when the current exceeds the allowable value even momentarily (hereinafter, this allowable value will be referred to as the ``notch-up current (1)''). On the other hand, as shown in FIGS. 7 and 8, the current flowing through the ICBT 3 at the time of a short-circuit accident in the power conversion device shows a tendency to decrease as time passes after reaching a peak value. In FIG. 7, 14 is a DC power supply, and 15 is a wiring inductance.
この電流の尖頭値(Icp)が、ラッチアンプ電流IL
よりも小さい場合には特別な問題はないが、ICI)>
ILの場合には過電流の発生タイミングによってはIc
pをしゃ断する場合が生じ、ラソチア・ツブを起こし、
結果として素子が破壊するという問題がある。The peak value (Icp) of this current is the latch amplifier current IL
There is no particular problem if it is smaller than ICI)>
In the case of IL, depending on the timing of overcurrent occurrence, Ic
There are cases where p is cut off, causing Lasocia whelk,
As a result, there is a problem that the element is destroyed.
本発明の目的は前記従来例の不都合を解消し、I G
B Tが過電流の尖頭値をしゃ断しないようにしてI
GBTのランチアップを防止することができ、確実な保
護がf%られるI GBTの過電流保護回路を提供する
ことにある。An object of the present invention is to eliminate the disadvantages of the conventional example, and to
I prevent B T from cutting off the peak value of overcurrent.
An object of the present invention is to provide an overcurrent protection circuit for an IGBT that can prevent GBT launch-up and provide reliable protection.
〔課題を解決するための手段]
本発明は前記目的を達成するため、I GBTに過電流
が流れたことを検知する過電流検知手段と、該検知手段
の出力を受けて所定パルス幅の信号を送出するワンショ
ット回路を設DJ、過電流が生じた場合には、前記所定
パルス幅に相当する期間、強制的にI G B Tを導
通させた後に、過電流をしゃ断することを要旨とするも
のである。[Means for Solving the Problems] In order to achieve the above object, the present invention includes an overcurrent detection means for detecting that an overcurrent has flowed into an IGBT, and a signal having a predetermined pulse width in response to the output of the detection means. The gist is that if an overcurrent occurs, the IGBT is forcibly turned on for a period corresponding to the predetermined pulse width, and then the overcurrent is cut off. It is something to do.
本発明によれば、過電流の発生を検知した後、一定期間
入力信号とは無関係に強制的にI G B Tを導通さ
せて、過電流の尖頭値をしゃ断しないようにすることに
より、l G B Tがしゃ断する際のコレクタ電流を
ランチアップ電流以下とすることができる。According to the present invention, after detecting the occurrence of an overcurrent, the IGBT is forced to conduct for a certain period of time regardless of the input signal, so that the peak value of the overcurrent is not cut off. The collector current when the lGBT is cut off can be made lower than the launch-up current.
〔実施例] 以下、図面について本発明の実施例を詳細に説明する。〔Example] Embodiments of the present invention will be described in detail below with reference to the drawings.
第1図は本発明のICBTの過電流保護回路の第1実施
例を示す回路図で、前記従来例を示す第5図と同じく、
図中3はIGBT、1はそのケート駆動回路、2は抵抗
器、4は過電流保護回路を示す。FIG. 1 is a circuit diagram showing a first embodiment of the ICBT overcurrent protection circuit of the present invention, and like FIG. 5 showing the conventional example,
In the figure, 3 is an IGBT, 1 is its gate drive circuit, 2 is a resistor, and 4 is an overcurrent protection circuit.
本実施例において、過電流保護回路4は、電圧監視回路
9と立」二り検出回路10との組合せによるIC;BT
3に過電流が流れたことを検知する手段と、この立上り
検出回路10の出力を受は所定の幅のパルスをゲート駆
動回路1へ出力するワンシゴッI・回路11とからなる
。このうち、立」二り検出回路10は入力信号が’ H
’”レベルの期間中に電圧監視回路9の立上りエツジ(
VCEが所定の値をこえたことを意味する)を検出する
ことにより、過電流を検知し、その出力に信号を送出す
るものである。In this embodiment, the overcurrent protection circuit 4 is an IC;
3, and a circuit 11 that receives the output of the rise detection circuit 10 and outputs a pulse of a predetermined width to the gate drive circuit 1. Of these, the input signal is
The rising edge of the voltage monitoring circuit 9 (
This means that VCE exceeds a predetermined value), thereby detecting an overcurrent and sending a signal to its output.
ワンショット回路11は、立上がり検出回路10の出力
を受けて所定の幅のパルスをゲート駆動回路1へ出力す
るものである。The one-shot circuit 11 receives the output of the rising edge detection circuit 10 and outputs a pulse of a predetermined width to the gate drive circuit 1.
第2図はこの第1図回路の各部の動作波形を示すもので
、立上がり検出回路10がCに示すように過電流検出を
表わす出力信号をワンショット回路11へ送り、ワンシ
ョソI・回路11はこれを受けてdに示すようにゲート
駆動回路1に出力“トビ″の所定幅のパルスを送出する
ときに、ゲート駆動回路1は入力信号aの有無とは無関
係にワンショット回路11の出力が前記” H’“の期
間はI GBT3を導通させる。このようにすることに
より、入力信号の立下がり直前で過電流が生じた場合で
も、所定の期間だりICBT3を導通させ、過電流の尖
頭値をしゃ断しないようにすることができる。FIG. 2 shows the operating waveforms of each part of the circuit shown in FIG. In response to this, when sending out a pulse with a predetermined width of the output "tobi" to the gate drive circuit 1 as shown in d, the gate drive circuit 1 outputs the output of the one-shot circuit 11 regardless of the presence or absence of the input signal a. During the "H'" period, the IGBT3 is made conductive. By doing so, even if an overcurrent occurs just before the fall of the input signal, the ICBT 3 can be made conductive for a predetermined period, and the peak value of the overcurrent can be prevented from being cut off.
第3図は本発明の第2実施例を示すもので、過電流保護
回路4におけるICBT3に過電流が流れたことを検知
する手段としては、I GBT3のコレクタ側に設ける
電流検出器12と過電流検出回路13とで構成し、I
GBT3に流れる電流を電流検出器12で検出し、過電
流検出回路13で過電流の有無を判別するようにした。FIG. 3 shows a second embodiment of the present invention, in which the overcurrent protection circuit 4 uses a current detector 12 provided on the collector side of the IGBT 3 and an It consists of a current detection circuit 13,
A current detector 12 detects the current flowing through the GBT 3, and an overcurrent detection circuit 13 determines whether there is an overcurrent.
前記第1実施例と同じくワンショット回路11は過電流
検出信号を受けて所定時間幅の駆動信号を発生し、人力
信号の状態とは無関係にゲート駆動回路1を介してIG
BT3を導通させる。As in the first embodiment, the one-shot circuit 11 receives the overcurrent detection signal and generates a drive signal with a predetermined time width, and outputs the IG signal through the gate drive circuit 1 regardless of the state of the human power signal.
Make BT3 conductive.
第4図はこの第3図回路の各部の動作波形を示すもので
、IGBT3を流れる電流Icが所定のレベル(図示の
I oc)を超えると、過電流検出回路13から検出信
号すが送出される。これをトリガとしてワンショット回
路11から所定のパルス幅T1のパルスが駆動回路へ与
えられ、この結果IGBT3のゲート・エミッタ間電圧
VGEは図示のようになり、過電流検出後T3期期間通
した後IGBT3がオフする。従って、過電流の尖頭値
(Icp)をしゃ断することはなく、ラッチアップを防
止できる。FIG. 4 shows the operating waveforms of each part of the circuit shown in FIG. 3. When the current Ic flowing through the IGBT 3 exceeds a predetermined level (Ioc shown in the figure), a detection signal S is sent from the overcurrent detection circuit 13. Ru. Using this as a trigger, a pulse with a predetermined pulse width T1 is applied from the one-shot circuit 11 to the drive circuit, and as a result, the gate-emitter voltage VGE of the IGBT 3 becomes as shown in the figure, and after passing through the T3 period after overcurrent detection. IGBT3 turns off. Therefore, the peak value (Icp) of overcurrent is not cut off, and latch-up can be prevented.
なお、図中ではIGBT3のオフ状態では■、Eを負電
圧としているが、■6Eは場合によってはOvでもよい
。Note that in the figure, when the IGBT 3 is in the off state, ■ and E are negative voltages, but ■6E may be Ov depending on the case.
(発明の効果〕
以上述べたように本発明のI GBTの過電流保護回路
は、一定期間、入力信号とは無関係に強制的にI GB
Tを導通させることによりI GBTがしゃ断する際の
コレクタ電流のラッチアップ電流以下とすることができ
、確実な保護が得られるものである。(Effects of the Invention) As described above, the IGBT overcurrent protection circuit of the present invention forcibly interrupts the IGBT for a certain period of time regardless of the input signal.
By making T conductive, the collector current can be kept below the latch-up current when the IGBT is cut off, and reliable protection can be obtained.
第1図は本発明のI GBTの過電流保護回路の第1実
施例を示すブロック回路図、第2図は同上動作波形図、
第3図は第2実施例を示すブロック回路図、第4図は同
上動作波形図、第5図は従来例を示すブロック回路図、
第6図は同上動作波形図、第7図は短絡事故時の模擬回
路図、第8図はその時の素子の電圧、電流波形図である
。
1・・・ゲート駆動回路 2・・・抵抗器3・・・
T GBT 4・・・過電流保護回路5・
・・電圧監視回路 6・・・タイマー回路7・・
・抵抗器 8・・・トランジスタ9・・・
電圧監視回路 10・・・立上がり検出回路11
・・・ワンショット回路 12・・・電流検出器13
・・・過電流検出回路 14・・・直流電源15・
・・配線インダクタンス
N曽く■9:
O
−〇FIG. 1 is a block circuit diagram showing a first embodiment of the IGBT overcurrent protection circuit of the present invention, and FIG. 2 is an operation waveform diagram of the same as above.
FIG. 3 is a block circuit diagram showing the second embodiment, FIG. 4 is an operation waveform diagram of the same as above, and FIG. 5 is a block circuit diagram showing a conventional example.
FIG. 6 is an operating waveform diagram similar to the above, FIG. 7 is a simulated circuit diagram at the time of a short circuit accident, and FIG. 8 is a diagram of voltage and current waveforms of the element at that time. 1... Gate drive circuit 2... Resistor 3...
T GBT 4...Overcurrent protection circuit 5.
...Voltage monitoring circuit 6...Timer circuit 7...
・Resistor 8...Transistor 9...
Voltage monitoring circuit 10...rise detection circuit 11
... One-shot circuit 12 ... Current detector 13
...Overcurrent detection circuit 14...DC power supply 15.
・Wiring inductance N soku ■9: O −〇
Claims (1)
段と、該検知手段の出力を受けて所定パルス幅の信号を
送出するワンショット回路を設け、過電流が生じた場合
には、前記所定パルス幅に相当する期間、強制的にIG
BTを導通させた後に、過電流をしゃ断することを特徴
とするIGBTの過電流保護回路。An overcurrent detection means for detecting that an overcurrent has flowed through the IGBT, and a one-shot circuit for receiving the output of the detection means and sending out a signal with a predetermined pulse width are provided. Forced IG for a period corresponding to the pulse width
An overcurrent protection circuit for an IGBT, which is characterized by cutting off an overcurrent after making a BT conductive.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20858788A JPH0770977B2 (en) | 1988-08-23 | 1988-08-23 | IGBT overcurrent protection circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20858788A JPH0770977B2 (en) | 1988-08-23 | 1988-08-23 | IGBT overcurrent protection circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0257011A true JPH0257011A (en) | 1990-02-26 |
JPH0770977B2 JPH0770977B2 (en) | 1995-07-31 |
Family
ID=16558660
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20858788A Expired - Lifetime JPH0770977B2 (en) | 1988-08-23 | 1988-08-23 | IGBT overcurrent protection circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0770977B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6154921A (en) * | 1984-08-28 | 1986-03-19 | Asahi Chem Ind Co Ltd | Acetal copolymer forming material with high young's modulus |
JPH04261370A (en) * | 1991-01-24 | 1992-09-17 | Mitsubishi Electric Corp | Current type inverter |
CN102445647A (en) * | 2011-10-10 | 2012-05-09 | 保定天威集团有限公司 | IGBT (Insulated Gate Bipolar Transistor) pulse check method |
-
1988
- 1988-08-23 JP JP20858788A patent/JPH0770977B2/en not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6154921A (en) * | 1984-08-28 | 1986-03-19 | Asahi Chem Ind Co Ltd | Acetal copolymer forming material with high young's modulus |
JPH0473375B2 (en) * | 1984-08-28 | 1992-11-20 | Asahi Chemical Ind | |
JPH04261370A (en) * | 1991-01-24 | 1992-09-17 | Mitsubishi Electric Corp | Current type inverter |
CN102445647A (en) * | 2011-10-10 | 2012-05-09 | 保定天威集团有限公司 | IGBT (Insulated Gate Bipolar Transistor) pulse check method |
Also Published As
Publication number | Publication date |
---|---|
JPH0770977B2 (en) | 1995-07-31 |
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