JPH0256856B2 - - Google Patents

Info

Publication number
JPH0256856B2
JPH0256856B2 JP20089283A JP20089283A JPH0256856B2 JP H0256856 B2 JPH0256856 B2 JP H0256856B2 JP 20089283 A JP20089283 A JP 20089283A JP 20089283 A JP20089283 A JP 20089283A JP H0256856 B2 JPH0256856 B2 JP H0256856B2
Authority
JP
Japan
Prior art keywords
mosfet
source
series
gate
switch circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP20089283A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6093820A (ja
Inventor
Norikazu Tokunaga
Hiroshi Fukui
Kozo Watanabe
Hisao Amano
Masayoshi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP20089283A priority Critical patent/JPS6093820A/ja
Priority to EP84112922A priority patent/EP0140349B1/en
Priority to DE8484112922T priority patent/DE3485409D1/de
Priority to US06/665,132 priority patent/US4692643A/en
Publication of JPS6093820A publication Critical patent/JPS6093820A/ja
Publication of JPH0256856B2 publication Critical patent/JPH0256856B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches

Landscapes

  • Electronic Switches (AREA)
JP20089283A 1983-10-28 1983-10-28 スイツチ回路 Granted JPS6093820A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP20089283A JPS6093820A (ja) 1983-10-28 1983-10-28 スイツチ回路
EP84112922A EP0140349B1 (en) 1983-10-28 1984-10-26 Semiconductor switching device
DE8484112922T DE3485409D1 (de) 1983-10-28 1984-10-26 Halbleiterschaltvorrichtung.
US06/665,132 US4692643A (en) 1983-10-28 1984-10-26 Semiconductor switching device having plural MOSFET's, GTO's or the like connected in series

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20089283A JPS6093820A (ja) 1983-10-28 1983-10-28 スイツチ回路

Publications (2)

Publication Number Publication Date
JPS6093820A JPS6093820A (ja) 1985-05-25
JPH0256856B2 true JPH0256856B2 (ru) 1990-12-03

Family

ID=16431983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20089283A Granted JPS6093820A (ja) 1983-10-28 1983-10-28 スイツチ回路

Country Status (1)

Country Link
JP (1) JPS6093820A (ru)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01321723A (ja) * 1988-06-23 1989-12-27 Mitsubishi Electric Corp Ｆｅｔ直列回路
JP2996817B2 (ja) * 1992-11-30 2000-01-11 株式会社東芝 ドライバ回路
JPH07115000A (ja) * 1993-10-14 1995-05-02 Agency Of Ind Science & Technol 荷電粒子パルスビーム発生装置
DE102006037336B3 (de) * 2006-08-10 2008-02-07 Semikron Elektronik Gmbh & Co. Kg Levelshifter für eine Ansteuerschaltung für Leistungshalbleiterbauelemente
US8866253B2 (en) * 2012-01-31 2014-10-21 Infineon Technologies Dresden Gmbh Semiconductor arrangement with active drift zone
JP5707357B2 (ja) * 2012-04-04 2015-04-30 株式会社日立ハイテクノロジーズ スイッチ回路、質量分析装置及びスイッチ回路の制御方法
JP6443558B2 (ja) 2015-09-18 2018-12-26 アイシン・エィ・ダブリュ株式会社 電動車両用インバータ装置

Also Published As

Publication number Publication date
JPS6093820A (ja) 1985-05-25

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