JPH0252431A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To enhance a yield by a method wherein, after a semiconductor water has been coated with a silicon compound solution, a silicon compound solution film in a peripheral part of the semiconductor wafer is removed before the wafer is heat- treated in order to prevent a silica component from being released as a particle. CONSTITUTION:After a semiconductor wafer 1 has been fixed to a rotary chuck 3, a silicon compound solution is dropped to the central part of the semiconductor wafer 1. Then, while the rotary chuck 3 is being turned, the silicon compound solution is spread uniformly over a wafer face by means of a centrifugal force. During this process, an excess silicon compound solution is blown off to the outside of the semiconductor wafer 1; however, a silicon compound solution film 2 is formed in a peripheral part and an end part of the semiconductor wafer 1. Then, a removal liquid of the silicon compound solution film is applied, from nozzled 4A, 4B, to the peripheral part of the semiconductor wafer 1 which is being turned; the silicon compound solution film in the peripheral part and the end part is removed. An acid containing hydrofluoric acid or an alcohol is appropriate as the removal liquid. While the water is erected in a wafer support jig 5 and heat-treated in an atmosphere of O2 or H2O, a solvent other than a silica component is evaporated.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, and particularly to a method for forming a silicon oxide film.

[Conventional technology]

Conventionally, in the manufacturing process of semiconductor devices, in order to form a silicon oxide film (hereinafter referred to as a silica film) on a semiconductor wafer, a silicon compound solution is dropped onto the semiconductor wafer and the semiconductor wafer is rotated. Spread the solution on the semiconductor wafer surface, then 2
A method in which a silica film is formed on the surface of a semiconductor wafer by heat treatment at 00 to 1000° C. has been mainly used.

[Problem to be solved by the invention]

In the conventional silica film forming method described above, a film of silicon compound solution is also formed on the periphery of the semiconductor wafer, so the jig that supports the semiconductor wafer comes into contact with the periphery of the semiconductor wafer during heat treatment, causing damage to the contact area. The adhered silicon compound components are released as particles. Then, these particles re-adhere to the surface of the semiconductor wafer and cause defects, resulting in a drawback that a high yield of non-defective products cannot be obtained.

[Means to solve the problem]

The method for manufacturing a semiconductor device of the present invention is a method for manufacturing a semiconductor device in which a silicon compound solution is applied onto a semiconductor wafer by a spin coating method, and a silicon oxide film is formed by heat treatment. This is to remove the silicon compound solution film around the semiconductor wafer.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

FIGS. 1(a) and 1(b) are cross-sectional views of the vicinity of a semiconductor wafer shown in the order of steps for explaining an embodiment of the present invention.

First, as shown in FIG. 1(a), a semiconductor wafer 1 is fixed on a rotating chuck 3, and then a silicon compound solution is dropped onto the center of the semiconductor wafer 1. Next, the rotary chuck 3 is rotated to uniformly spread the silicon compound solution over the wafer surface by centrifugal force. At this time, the excess silicon compound solution is blown off to the outside of the semiconductor wafer 1, but the silicon compound solution film 2 is also formed on the periphery and end of the semiconductor wafer 1.

Next, as shown in FIG. 1(b), a silicon compound solution film removal solution is applied to the peripheral part of the rotating semiconductor wafer 1 from the nozzles 4A and 4B to remove the silicon compound solution film at the peripheral part and the end. Perform removal.

As this removal liquid, an acid or alcohol containing hydrofluoric acid is suitable.

As shown in FIG. 2, the semiconductor wafer 1 from which the peripheral silicon compound solution film has been removed is placed upright on the wafer support jig 5 and placed in an atmosphere of 0□ or H2O.
Heat treatment is performed at 00 to 1000°C. In this step, the solvent other than the silica component evaporates, and a silica film is formed by the chemical reaction of Si(OH)4→s i 02 +2H20↑. In this heat treatment process, the peripheral part of the semiconductor wafer 1 and the wafer support jig 5 come into contact with each other, but since the silicon compound solution film on the peripheral part of the semiconductor wafer 1 is removed in advance, the silica component becomes particles as in the conventional method. It will no longer be released. Therefore, a higher yield of non-defective products can be obtained compared to conventional methods.

〔Effect of the invention〕

As explained above, the present invention removes the silicon compound solution film around the semiconductor wafer after applying the silicon compound solution onto the semiconductor wafer and before heat treatment, thereby preventing contact with the wafer support jig during the heat treatment process. Since the silica component is no longer released as particles, a semiconductor device with improved yield can be obtained.

[Brief explanation of the drawing]

FIGS. 1(a) and 1(b) are cross-sectional views of the vicinity of a semiconductor wafer for explaining one embodiment of the present invention, and FIG. 2 is a cross-sectional view of a semiconductor wafer and a wafer support jig during heat treatment. DESCRIPTION OF SYMBOLS 1... Semiconductor wafer, 2... Silicon compound solution film, 3... Rotating chuck, 4A, 4B... Nozzle,
5...Wafer support jig.

Claims (1)

[Claims] In a method for manufacturing a semiconductor device in which a silicon compound solution is applied onto a semiconductor wafer by a spin coating method and a silicon oxide film is formed by heat treatment, the silicon compound solution film on the periphery of the semiconductor wafer is removed after the silicon compound solution is applied. A method for manufacturing a semiconductor device, characterized in that: