JPH0251220B2 - - Google Patents

Info

Publication number
JPH0251220B2
JPH0251220B2 JP58103667A JP10366783A JPH0251220B2 JP H0251220 B2 JPH0251220 B2 JP H0251220B2 JP 58103667 A JP58103667 A JP 58103667A JP 10366783 A JP10366783 A JP 10366783A JP H0251220 B2 JPH0251220 B2 JP H0251220B2
Authority
JP
Japan
Prior art keywords
graphite
reaction
fluorine
weight
active material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58103667A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59228362A (ja
Inventor
Kazuo Okamura
Satoru Koyama
Tadayuki Maeda
Tsutomu Kamifukikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daikin Industries Ltd
Original Assignee
Daikin Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daikin Industries Ltd filed Critical Daikin Industries Ltd
Priority to JP58103667A priority Critical patent/JPS59228362A/ja
Priority to DE8484106587T priority patent/DE3479696D1/de
Priority to EP84106587A priority patent/EP0128560B1/en
Publication of JPS59228362A publication Critical patent/JPS59228362A/ja
Priority to US06/793,465 priority patent/US4684591A/en
Publication of JPH0251220B2 publication Critical patent/JPH0251220B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/58—Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy; of polyanionic structures, e.g. phosphates, silicates or borates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Battery Electrode And Active Subsutance (AREA)
JP58103667A 1983-06-09 1983-06-09 電池活物質 Granted JPS59228362A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58103667A JPS59228362A (ja) 1983-06-09 1983-06-09 電池活物質
DE8484106587T DE3479696D1 (en) 1983-06-09 1984-06-08 Active materials for batteries
EP84106587A EP0128560B1 (en) 1983-06-09 1984-06-08 Active materials for batteries
US06/793,465 US4684591A (en) 1983-06-09 1985-10-29 Active materials for batteries

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58103667A JPS59228362A (ja) 1983-06-09 1983-06-09 電池活物質

Publications (2)

Publication Number Publication Date
JPS59228362A JPS59228362A (ja) 1984-12-21
JPH0251220B2 true JPH0251220B2 (enrdf_load_stackoverflow) 1990-11-06

Family

ID=14360134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58103667A Granted JPS59228362A (ja) 1983-06-09 1983-06-09 電池活物質

Country Status (1)

Country Link
JP (1) JPS59228362A (enrdf_load_stackoverflow)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US7005717B2 (en) 2000-05-31 2006-02-28 Freescale Semiconductor, Inc. Semiconductor device and method
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US7045815B2 (en) 2001-04-02 2006-05-16 Freescale Semiconductor, Inc. Semiconductor structure exhibiting reduced leakage current and method of fabricating same
US7067856B2 (en) 2000-02-10 2006-06-27 Freescale Semiconductor, Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US7105866B2 (en) 2000-07-24 2006-09-12 Freescale Semiconductor, Inc. Heterojunction tunneling diodes and process for fabricating same
US7161227B2 (en) 2001-08-14 2007-01-09 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US7211852B2 (en) 2001-01-19 2007-05-01 Freescale Semiconductor, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US7342276B2 (en) 2001-10-17 2008-03-11 Freescale Semiconductor, Inc. Method and apparatus utilizing monocrystalline insulator

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6028169A (ja) * 1983-07-22 1985-02-13 Daikin Ind Ltd 電池活物質
KR101222246B1 (ko) 2011-01-10 2013-01-16 삼성에스디아이 주식회사 전지용 케이스 및 이를 포함하는 이차 전지

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4175436A (en) * 1978-08-28 1979-11-27 Burlington Industries, Inc. Wet/dry bulb hygrometer with automatic wick feed
JPS5816468A (ja) * 1981-07-22 1983-01-31 Central Glass Co Ltd 電池活物質

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7067856B2 (en) 2000-02-10 2006-06-27 Freescale Semiconductor, Inc. Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US7005717B2 (en) 2000-05-31 2006-02-28 Freescale Semiconductor, Inc. Semiconductor device and method
US7105866B2 (en) 2000-07-24 2006-09-12 Freescale Semiconductor, Inc. Heterojunction tunneling diodes and process for fabricating same
US7211852B2 (en) 2001-01-19 2007-05-01 Freescale Semiconductor, Inc. Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate
US7045815B2 (en) 2001-04-02 2006-05-16 Freescale Semiconductor, Inc. Semiconductor structure exhibiting reduced leakage current and method of fabricating same
US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US7019332B2 (en) 2001-07-20 2006-03-28 Freescale Semiconductor, Inc. Fabrication of a wavelength locker within a semiconductor structure
US6855992B2 (en) 2001-07-24 2005-02-15 Motorola Inc. Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same
US7161227B2 (en) 2001-08-14 2007-01-09 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US7342276B2 (en) 2001-10-17 2008-03-11 Freescale Semiconductor, Inc. Method and apparatus utilizing monocrystalline insulator
US6916717B2 (en) 2002-05-03 2005-07-12 Motorola, Inc. Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
US7169619B2 (en) 2002-11-19 2007-01-30 Freescale Semiconductor, Inc. Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
US6885065B2 (en) 2002-11-20 2005-04-26 Freescale Semiconductor, Inc. Ferromagnetic semiconductor structure and method for forming the same
US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US7020374B2 (en) 2003-02-03 2006-03-28 Freescale Semiconductor, Inc. Optical waveguide structure and method for fabricating the same

Also Published As

Publication number Publication date
JPS59228362A (ja) 1984-12-21

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