JPH0250319A - Magnetic recording medium - Google Patents
Magnetic recording mediumInfo
- Publication number
- JPH0250319A JPH0250319A JP20046988A JP20046988A JPH0250319A JP H0250319 A JPH0250319 A JP H0250319A JP 20046988 A JP20046988 A JP 20046988A JP 20046988 A JP20046988 A JP 20046988A JP H0250319 A JPH0250319 A JP H0250319A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- protective film
- magnetic recording
- recording medium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001681 protective effect Effects 0.000 claims abstract description 27
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052796 boron Inorganic materials 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 48
- 239000010409 thin film Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 14
- 238000005260 corrosion Methods 0.000 abstract description 14
- 230000007797 corrosion Effects 0.000 abstract description 14
- 239000010410 layer Substances 0.000 description 31
- 230000000694 effects Effects 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- -1 various oxides Chemical class 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 229910000521 B alloy Inorganic materials 0.000 description 1
- 229910001339 C alloy Inorganic materials 0.000 description 1
- 229910020707 Co—Pt Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910001566 austenite Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は磁性薄膜と該磁性薄膜の表面に形成された保護
膜とを有する磁気記録媒体に係り、特にこの保護膜の耐
食性を高めたディスク形の磁気記録媒体に関するもので
ある。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a magnetic recording medium having a magnetic thin film and a protective film formed on the surface of the magnetic thin film, and particularly relates to a disk in which the corrosion resistance of the protective film is improved. This relates to magnetic recording media of the form.
[従来の技術]
近年、記録密度の高い合金磁性薄膜を有する磁気記録媒
体の研究開発が大いに推進されている。[Prior Art] In recent years, research and development of magnetic recording media having alloy magnetic thin films with high recording density has been greatly promoted.
その一つとして、基板の板面上に磁性薄膜層を形成し、
さらにその上に保護膜を設けたものがある。One of them is to form a magnetic thin film layer on the surface of the substrate,
Furthermore, some have a protective film provided thereon.
この保護膜としては、オスミウム、ルテニウム。Osmium and ruthenium are used as this protective film.
イリジウム、マンガン、タングステン等の金属、酸化珪
素、酸化チタン、酸化タンタル、酸化ハフニウム等各種
の酸化物、窒化物、または炭化物、硼素、炭素、炭素と
ホウ素の合金、ポリ珪酸、ダイヤモンド構造炭素などか
らなる膜を用いることが知られている(特開昭59−6
1106号公報)。From metals such as iridium, manganese, and tungsten, various oxides, nitrides, or carbides such as silicon oxide, titanium oxide, tantalum oxide, and hafnium oxide, boron, carbon, alloys of carbon and boron, polysilicate, diamond structure carbon, etc. It is known to use a film of
1106).
[発明が解決しようとする問題点]
これらの保護膜のうち、特に潤滑性に優れるところから
炭素がしばしば用いられている。しかし。[Problems to be Solved by the Invention] Among these protective films, carbon is often used because it has particularly excellent lubricity. but.
この炭素保護膜は、H,Oや08等を透過させる性質が
比較的高く、これがために磁性膜層の耐食。This carbon protective film has a relatively high property of transmitting H, O, 08, etc., and this makes it highly resistant to corrosion of the magnetic film layer.
耐候性を高めるという本来の保護作用にやや欠けるとい
う問題があった。There was a problem that the original protective effect of increasing weather resistance was somewhat lacking.
また、上記の炭素以外の材質からなる保護膜においては
、多少耐食性、耐候性に優れてはいるものの潤滑性が炭
素よりもかなり劣るという問題があった。In addition, protective films made of materials other than carbon have a problem in that, although they have somewhat superior corrosion resistance and weather resistance, their lubricity is considerably inferior to that of carbon.
[問題を解決するための手段]
本発明者らは、磁気記録媒体の磁性薄膜上に形成される
保護膜について、鋭意研究を重ねた結果、保護膜として
硼素(B)または炭素(C)のうち少なくとも1種以上
を含むCrからなる第1層と、この第1層上に形成され
たアモルファス状炭素の第2層からなるものは耐食性、
耐候性及び潤滑性のいずれの特性にも極めて優れている
ことを見出した。[Means for Solving the Problem] As a result of extensive research into the protective film formed on the magnetic thin film of a magnetic recording medium, the present inventors found that boron (B) or carbon (C) was used as the protective film. A first layer made of Cr containing at least one of these and a second layer made of amorphous carbon formed on this first layer has corrosion resistance,
It has been found that both weather resistance and lubricity are extremely excellent.
本発明はかかる知見に基づいてなされたものであり、基
板の板面上に磁性薄膜が形成されており。The present invention has been made based on this knowledge, and a magnetic thin film is formed on the surface of the substrate.
かつこの磁性薄膜の表面上に保護膜が形成された磁気記
録媒体において、該保護膜層は、BまたはCのうちの少
なくとも1種以上を含むCrからなる第1層と、その表
面側に形成されたアモルファス状炭素からなる第2層と
から構成されていることを特徴とする磁気記録媒体であ
る。In the magnetic recording medium in which a protective film is formed on the surface of the magnetic thin film, the protective film layer includes a first layer made of Cr containing at least one of B or C, and a first layer formed on the surface side of the first layer. This magnetic recording medium is characterized by comprising a second layer made of amorphous carbon.
本発明において、上記基板としては、アルミニウム、マ
グネシウムを数%含むアルミニウム合金、あるいはチタ
ン合金などが用いることができるが、軽量かつ安価であ
り加工も容易な点からアルミニウム合金をもちいるのが
好適でる。また、近年。In the present invention, aluminum, an aluminum alloy containing several percent of magnesium, or a titanium alloy can be used as the substrate, but it is preferable to use an aluminum alloy because it is lightweight, inexpensive, and easy to process. . Also, in recent years.
セラミック基板が注目されているが、本発明は、このセ
ラミック基板を用いても良く、さらにはガラス基板をも
用い得るものである。Ceramic substrates are attracting attention, but the present invention may use such ceramic substrates or even glass substrates.
基板は、その表面が平坦になるように仕上げ処理された
ものが用いられる。この基板の上にはヘッドクラッシュ
によるディスク表面の変形を防ぐために、アルマイトや
N1−P等の下地層を設けることが好ましい、なお、セ
ラミック基板の場合には、このような処置は必ずしも必
要ではない。The substrate used is one whose surface has been finished to make it flat. It is preferable to provide a base layer such as alumite or N1-P on this substrate to prevent deformation of the disk surface due to head crashes. However, in the case of a ceramic substrate, such treatment is not necessarily necessary. .
基板がアルミニウムまたはアルミニウム合金である場合
には、基板の表面を陽極酸化法によってアルマイト層を
形成し、これを下地層とすることができる1本発明にお
いて、アルマイト層の厚さは、特に限定されるものでは
ないが1通常は数μm−数10μ−1例えば10μ重程
度とされる。When the substrate is made of aluminum or an aluminum alloy, an alumite layer can be formed on the surface of the substrate by anodizing, and this can be used as a base layer.In the present invention, the thickness of the alumite layer is not particularly limited. It is usually several micrometers to several tens of micrometers, for example, about 10 micrometers thick.
N1−P下地層は1通常、無電界めっき法により形成さ
れ、その厚さとしては、約10〜100μm程度とされ
る。また、これらのアルマイト下地層やN1−P下地層
は、その上に磁性薄膜を形成するに先だって表面研磨す
るのが好ましい。The N1-P underlayer is usually formed by electroless plating and has a thickness of about 10 to 100 μm. Further, it is preferable that the surface of these alumite underlayers and N1-P underlayers be polished before forming a magnetic thin film thereon.
本発明において、上記下地膜の上には磁性薄膜が形成さ
れる。この磁性薄膜としては、合金磁性薄膜や酸化物系
磁性薄膜を用いることができる。In the present invention, a magnetic thin film is formed on the base film. As this magnetic thin film, an alloy magnetic thin film or an oxide magnetic thin film can be used.
合金磁性薄膜としては、Co、Go−Ni、G。Co, Go-Ni, and G are used as alloy magnetic thin films.
−Ni−Pt、Go−Ni−P、Co−Pt系等各種の
ものを用いることができる。酸化物系磁性薄膜としては
、γ−Fe、03等が挙げられる。-Ni-Pt, Go-Ni-P, Co-Pt, etc. can be used. Examples of the oxide-based magnetic thin film include γ-Fe, 03, and the like.
これらの磁性薄膜は1通常のスパッタリング等の気相め
っき法や特開昭56−41524号公報に記載されたよ
うな液相めつき法によって形成できる。なお、上記組成
および製法等は一例であって、本発明は、上記組成及び
製造法に限定されるものでないことは勿論である
本発明において、上記磁性薄膜の上には、BまたはCの
うちの少なくとも1種以上を含むCr膜からなる第1層
と、この第1層の表面側に形成されたアモルファス状炭
素からなる第2層とから構成される保護膜を形成する。These magnetic thin films can be formed by a conventional gas phase plating method such as sputtering or a liquid phase plating method as described in Japanese Patent Application Laid-open No. 56-41524. Note that the above composition and manufacturing method are merely examples, and the present invention is of course not limited to the above composition and manufacturing method. A protective film is formed of a first layer made of a Cr film containing at least one of the above, and a second layer made of amorphous carbon formed on the surface side of the first layer.
第1層として形成されるCr膜は、具体的には、Cr−
B系膜、Cr−C系11.cr−B−C系膜のいずれで
も良い。Specifically, the Cr film formed as the first layer is Cr-
B system film, Cr-C system 11. Any cr-B-C type film may be used.
このBまたはCを1種以上含むCr膜からなる層は、ア
モルファス状炭素からなる層よりも優れた耐食性及び耐
候性を有している。また、BまたはCを含むCr膜は硬
質であり、保護膜の耐C8S性を高める効果がある。This layer made of a Cr film containing one or more types of B or C has better corrosion resistance and weather resistance than a layer made of amorphous carbon. Further, the Cr film containing B or C is hard and has the effect of increasing the C8S resistance of the protective film.
本発明において上記保護膜は、その膜厚(第1層と第2
層との膜厚の和)が1000人を越えると、形成時間が
長くなると共に磁気ヘッドと磁性薄膜との距離を大きく
しディスクの電磁変換特性を低下させる。また、当然な
がら、薄すぎる場合には、保護膜としての機能を果たさ
なくなる。このため、特に好ましいのは、膜厚が300
〜1000人のときである。なお、第1層の膜厚は、1
00〜300人程度が好ましい、100人よりも薄い場
合には、耐食性、耐候性を改善する効果が小さくなるた
めである。一方、300人を越える場合には、耐食性、
耐候性の点においては優れるのであるが、前述のように
保護膜全体として1000Å以下の厚さにするのが好ま
しいため、その分だけ第2層(アモルファス状炭素層)
の厚さを減らすようにする必要が生ずる。また、第2層
は。In the present invention, the protective film has a thickness (first layer and second layer).
If the total film thickness exceeds 1000, the formation time becomes longer and the distance between the magnetic head and the magnetic thin film becomes larger, which deteriorates the electromagnetic conversion characteristics of the disk. Naturally, if it is too thin, it will not function as a protective film. Therefore, it is particularly preferable that the film thickness is 300 mm.
~1000 people. Note that the thickness of the first layer is 1
This is because if the thickness is thinner than 100, the effect of improving corrosion resistance and weather resistance will be reduced. On the other hand, if there are more than 300 people, corrosion resistance,
Although it is excellent in terms of weather resistance, as mentioned above, it is preferable that the overall thickness of the protective film be 1000 Å or less, so the second layer (amorphous carbon layer)
There arises a need to reduce the thickness of the material. Also, the second layer.
200〜700人程度にするのが好ましい、200人よ
りも薄い場合には潤滑性改善効果が小さくなり、700
人を越える場合には、第1層の厚さを制限する必要が生
じ得るためである。It is preferable to set the number to about 200 to 700; if it is thinner than 200, the lubricity improvement effect will be small;
This is because if the thickness exceeds that of a person, it may be necessary to limit the thickness of the first layer.
また、本発明において、上記第1層のCr膜におけるB
またはCの含有量は、5〜30at%であることが好ま
しく、この組成範囲にあるとき、BまたはCがメタライ
ズ元素としての効果を表わし、優れたアモルファスCr
膜を形成する。このようなCr膜は、BまたはCを含ま
ないCr膜よりも緻密性や硬度において優れており、耐
食性あるいは耐候性の点で優れるばかりでなく、耐C8
S性をも高める利点がある。Further, in the present invention, B in the first layer Cr film is
Alternatively, the content of C is preferably 5 to 30 at%, and when it is in this composition range, B or C exhibits an effect as a metallizing element and produces excellent amorphous Cr.
Forms a film. Such a Cr film is superior in density and hardness to a Cr film that does not contain B or C, and not only has excellent corrosion resistance and weather resistance, but also has C8 resistance.
It also has the advantage of increasing S properties.
なお、本発明においては、この保護膜の上に更に各種の
有機物質から成る潤滑剤を塗布することもできる。In the present invention, a lubricant made of various organic substances can also be further applied on the protective film.
[実施例コ 以下、本発明を具体的実施例によって詳細に説明する。[Example code] Hereinafter, the present invention will be explained in detail using specific examples.
なお、以下に述べる実施例においては。In addition, in the examples described below.
マグネトロンr、f、スパッタ装置によったが、イオン
工学的に同様のことが言えるイオンビームスパッタリン
グ等によって本発明の効果を得ることが可能であること
は無論である。Although magnetron R, F, and sputtering devices were used, it goes without saying that the effects of the present invention can be obtained by ion beam sputtering, etc., which can be said to be similar in terms of ion technology.
(実施例1)
ガラス基板上に、平板マグネトロンr、f、スパッタ装
置を用い、下記条件にてCr下地膜を3000人つけ、
ただちにGo−Ni薄膜を形成した。(Example 1) 3,000 Cr base films were deposited on a glass substrate using a flat plate magnetron r, f and sputtering device under the following conditions.
A Go-Ni thin film was immediately formed.
初期排気 <3 X 10 Torrターゲ
ット組成 Ni30原子%残部C。Initial pumping <3 X 10 Torr Target composition 30 atomic percent Ni, balance C.
磁性薄膜 500人
薄膜形成速度 100人/+*in基板温度
200℃
その後、上記と同一条件にて、純度99%以上のCrタ
ーゲット上にBおよびCのチップを配置することにより
成分および組成を変化させ、Crを主とする第1層の保
護膜を形成し、更にArガス圧5mTorr、薄膜形成
速度50人/−inとしたこと以外は上記と同一条件に
てアモルファス状カーボン第2層の保護膜を形成した。Magnetic thin film 500 people Thin film formation speed 100 people/+*in substrate temperature
200°C After that, under the same conditions as above, the components and composition were changed by placing B and C chips on a Cr target with a purity of 99% or more, and a first layer of protective film mainly made of Cr was formed. In addition, a protective film of the amorphous carbon second layer was formed under the same conditions as above except that the Ar gas pressure was 5 mTorr and the thin film formation rate was 50 people/in.
このときの保護層の組成およびそれぞれの保護層の膜厚
は第1表に示した通りである。また、その後、試料を比
抵抗3MΩ・C■(25℃)の純水中に1週間浸漬し、
飽和磁束密度(Br)の減量(ΔBr)を求めることに
より、耐食性、耐候性を試験した。その結果も第1表中
に示す。The composition of the protective layer and the film thickness of each protective layer at this time are as shown in Table 1. After that, the sample was immersed in pure water with a specific resistance of 3 MΩ・C (25°C) for one week.
Corrosion resistance and weather resistance were tested by determining the reduction in saturation magnetic flux density (Br) (ΔBr). The results are also shown in Table 1.
(比較例1)
実施例1と同じスパッタ条件で、Cr膜、Cr−Ni膜
、およびC膜を順次形成し、保護膜を作製した。この膜
について、実施例1と同様に耐食性および耐候性などの
試験を行なった。結果を第1表中に比較例として示す。(Comparative Example 1) A Cr film, a Cr-Ni film, and a C film were sequentially formed under the same sputtering conditions as in Example 1 to produce a protective film. This film was tested for corrosion resistance, weather resistance, etc. in the same manner as in Example 1. The results are shown in Table 1 as a comparative example.
第1表
第1表により、本発明による磁気記録媒体は、比較例に
比べて優れた耐食性および耐候性を有することが明らか
である。Table 1 It is clear from Table 1 that the magnetic recording medium according to the present invention has superior corrosion resistance and weather resistance compared to the comparative example.
[効果]
以上詳述した通り、本発明の磁気記録媒体の保護膜は、
耐食性及び耐候性に優れているので、磁性膜層の十分な
保護が図れ、耐久性に優れる磁気記録媒体が実現できる
。[Effects] As detailed above, the protective film of the magnetic recording medium of the present invention has the following effects:
Since it has excellent corrosion resistance and weather resistance, the magnetic film layer can be sufficiently protected, and a magnetic recording medium with excellent durability can be realized.
Claims (3)
、この磁性薄膜の表面に保護膜層が形成された磁気記録
媒体において、前記保護膜層が、硼素または炭素の少な
くとも1種以上を含有するCr膜からなる第1層と、こ
の第1層の表面側に形成されたアモルファス状炭素から
なる第2層とから構成されていることを特徴とする磁気
記録媒体。(1) In a magnetic recording medium in which a magnetic thin film is formed on the plate surface of a substrate and a protective film layer is formed on the surface of this magnetic thin film, the protective film layer contains at least one kind of boron or carbon. A magnetic recording medium comprising a first layer made of a Cr film containing the above, and a second layer made of amorphous carbon formed on the surface side of the first layer.
00Åであり、第2層の厚さが200〜700Åである
ことを特徴とする請求項(1)に記載の磁気記録媒体。(2) The thickness of the first layer in the above protective film layer is 100 to 3
00 Å, and the second layer has a thickness of 200 to 700 Å.
炭素の含有量が5〜30原子%以下であることを特徴と
する請求項(1)または(2)のいずれかに記載の磁気
記録媒体。(3) The magnetic recording according to any one of claims (1) and (2), characterized in that the content of boron or carbon in the Cr film constituting the first layer is 5 to 30 atomic % or less. Medium.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20046988A JPH0250319A (en) | 1988-08-11 | 1988-08-11 | Magnetic recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20046988A JPH0250319A (en) | 1988-08-11 | 1988-08-11 | Magnetic recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0250319A true JPH0250319A (en) | 1990-02-20 |
Family
ID=16424837
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20046988A Pending JPH0250319A (en) | 1988-08-11 | 1988-08-11 | Magnetic recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0250319A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10155329B2 (en) | 2009-03-16 | 2018-12-18 | Leonhard Kurz Stiftung & Co. Kg | Method for decorating plastic parts |
-
1988
- 1988-08-11 JP JP20046988A patent/JPH0250319A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10155329B2 (en) | 2009-03-16 | 2018-12-18 | Leonhard Kurz Stiftung & Co. Kg | Method for decorating plastic parts |
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