JPH038119A - Production of magnetic recording medium - Google Patents

Production of magnetic recording medium

Info

Publication number
JPH038119A
JPH038119A JP14235689A JP14235689A JPH038119A JP H038119 A JPH038119 A JP H038119A JP 14235689 A JP14235689 A JP 14235689A JP 14235689 A JP14235689 A JP 14235689A JP H038119 A JPH038119 A JP H038119A
Authority
JP
Japan
Prior art keywords
thin film
rare gas
substrate
torr
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14235689A
Other languages
Japanese (ja)
Inventor
Kazunaga Furumizo
古溝 和永
Masatoshi Ichikawa
雅敏 市川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Kasei Corp
Original Assignee
Mitsubishi Kasei Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Kasei Corp filed Critical Mitsubishi Kasei Corp
Priority to JP14235689A priority Critical patent/JPH038119A/en
Publication of JPH038119A publication Critical patent/JPH038119A/en
Pending legal-status Critical Current

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  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

PURPOSE:To obtain a magnetic recording medium having extremely high coercive force by incorporating a specified amt. of water into a rare gas atmosphere at low pressure in the process of forming a Cr base thin film layer on a substrate. CONSTITUTION:A specified amt. of water is incorporated into the rare gas atmosphere at low pressure in the process of forming a Cr base thin film layer on a substrate. The amt. of water incorporated into the rare gas is determined to satisfy the partial pressure of water of >=1 X 10<-5>Torr, and preferably 1 X10<-5> - 1 X 10<-3>Torr, and more preferably, 2 X 10<-5> - 1 X 10<-3>Torr. If the partial pressure of water in the forming process is <1 X 10<-5>Torr, coercive force of the obtd. medium can not be improved enough. The rare gas is Ar, He, Ne, Kr, Xe, etc., and it is particularly preferable to use Ar.

Description

【発明の詳細な説明】 [a梁上の利用分野] 本発明は磁気記録媒体の製造方法に係り、詳しくは、高
い保磁力を有する磁気記録媒体を製造する方法に関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Application on A Beam] The present invention relates to a method of manufacturing a magnetic recording medium, and more particularly, to a method of manufacturing a magnetic recording medium having a high coercive force.

[従来の技術] 近年、コンピュータ等の情報処理技術の発達に伴い、そ
の外部記憶装置に用いられる磁気ディスクなどの磁気記
録媒体に対し、高密度記録化への要求がますます高めら
れている。
[Background Art] In recent years, with the development of information processing technology for computers and the like, there has been an increasing demand for higher density recording in magnetic recording media such as magnetic disks used in external storage devices.

現在、長手記録用磁気ディスクに用いられる磁気記録媒
体の磁性層としては、スパッタリング等によりクロム(
Cr)下地薄膜上に、エピタキシャル的に製膜されたコ
バルト(CO)系合金薄膜が主流となりてきている。し
かして、このCo系合金薄膜磁性層についても、高密度
記録化への要求に対し、磁気特性としてより高い保磁力
を付与することが必要とされており、従来より、その特
性についての報告が、数多くなされている。
Currently, the magnetic layer of magnetic recording media used for longitudinal recording magnetic disks is made of chromium (
Cobalt (CO) based alloy thin films epitaxially formed on Cr) base thin films have become mainstream. However, this Co-based alloy thin film magnetic layer also needs to have higher coercive force as a magnetic property to meet the demand for high-density recording, and there have been no reports on this property. , many have been done.

(例えば、’New longitudinal re
cording mediaCoxNi、 Cr、 f
rom high rate 5tatic magn
etronsputter−ingsystem” I
EEE Trans、 Magn、 Mag−22゜N
o5. (1986)、334;特開昭63−7923
3号公報;特開昭83−79988号公報、) [発明が解決しようとする課題] 従来報告されているように、Co系合金薄膜磁性層の保
磁力は、Cr下地薄膜の膜厚とともに増大する。しかし
ながら、ある上限値を超えると飽和特性を示し、それ以
上の高保磁力化は困難である。例えば、特開昭63−7
9968号公報には、Cr下地層薄膜の膜厚が1500
A以上では磁性層の保磁力がそれ以上上昇しない飽和傾
向が認められ、それ以下では磁性層の保tin力が著し
く低下し、実用上問題があることが示されている。
(For example, 'New longitudinal re
coding mediaCoxNi, Cr, f
rom high rate 5tatic magn
etron sputter-ing system” I
EEE Trans, Magn, Mag-22°N
o5. (1986), 334; JP-A-63-7923
3; JP-A-83-79988) [Problems to be Solved by the Invention] As previously reported, the coercive force of a Co-based alloy thin film magnetic layer increases with the thickness of the Cr underlayer thin film. do. However, when a certain upper limit is exceeded, saturation characteristics are exhibited, and it is difficult to increase the coercive force further. For example, JP-A-63-7
No. 9968 discloses that the thickness of the Cr underlayer thin film is 1500 mm.
It has been shown that above A, there is a tendency for the coercive force of the magnetic layer to saturate and the coercive force of the magnetic layer does not increase any further, and below that, the coercive force of the magnetic layer decreases significantly, posing a practical problem.

また、この保磁力は、Co系合金薄膜の膜厚の低減によ
り増加する。しかしながら、膜厚の低減は再生出力値の
低下につながるため、実用上、所定の膜厚以下に薄くす
ることは困難である。更に、磁性層の成膜時における成
膜ガス圧力、基板温度などのスパッタ条件の選択により
、ある程度の保磁力の向上は可能であるが、その向上効
果は小さいものである。
Moreover, this coercive force increases as the thickness of the Co-based alloy thin film is reduced. However, since reducing the film thickness leads to a decrease in the reproduction output value, it is practically difficult to reduce the film thickness to a predetermined thickness or less. Further, although it is possible to improve the coercive force to some extent by selecting sputtering conditions such as the deposition gas pressure and substrate temperature during deposition of the magnetic layer, the improvement effect is small.

本発明は上記従来の問題点を解決し、著しく高い保磁力
を有する磁気記録媒体を製造する方法を提供することを
目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned conventional problems and provide a method for manufacturing a magnetic recording medium having an extremely high coercive force.

[課題を解決するための手段コ 本発明の磁気記録媒体の製造方法は、基板上にCr下地
層薄膜及びCo系合金磁性薄膜を順次積層形成する磁気
記録媒体の製造方法において、基板上にCr下地層薄膜
を低圧希ガス雰囲気で製膜する際、該希ガスに水分をl
Xl0”’torr以上の分圧で共存させて製膜するこ
とを特徴とする。
[Means for Solving the Problems] The method for manufacturing a magnetic recording medium of the present invention is a method for manufacturing a magnetic recording medium in which a Cr underlayer thin film and a Co-based alloy magnetic thin film are sequentially laminated on a substrate. When forming a base layer thin film in a low-pressure rare gas atmosphere, water is added to the rare gas.
It is characterized in that the film is formed by coexisting at a partial pressure of Xl0'''torr or more.

即ち、本発明者等は上記従来の状況に鑑み、Efi気記
録媒体の保6n力を更に向上させるべく鋭意検討を重ね
た結果、基板上にCr下地層薄膜を低圧希ガス雰囲気に
て製膜するに際し、該希ガスに特定量の水分を共存させ
て製膜することにより、該Cr下地層薄膜上に更にCo
系合金磁性薄膜を製膜して得られる磁気記録媒体の保磁
力が著しく向上することを見出し、本発明を完成するに
至った。
That is, in view of the above-mentioned conventional situation, the present inventors have conducted intensive studies to further improve the retention force of Efi gas recording media, and as a result, they have developed a method for forming a thin Cr underlayer film on a substrate in a low-pressure rare gas atmosphere. When forming a film with the rare gas coexisting with a specific amount of water, Co is further added onto the Cr underlayer thin film.
The present inventors have discovered that the coercive force of a magnetic recording medium obtained by forming a magnetic thin film of a based alloy is significantly improved, and has completed the present invention.

以下、本発明につき詳細に説明する。Hereinafter, the present invention will be explained in detail.

本発明に用いられる基板としては、一般に硬質ガラス、
アルミニウム又はアルミニウム合金等のディスク状基板
が用いられ、特にアルミニウム基板が好適に使用される
。アルミニウム基板は通常所定の厚さに加工し、その表
面を鏡面加工した後、第1次下地層として硬質非6n性
金属、例えばニッケルーリン(Ni−P)合金を無電解
メツキ或いは陽極酸化処理により形成し、しかる後、第
2次下地層としてCrを製膜して用いられる。なお、上
記第1次下地層は必ずしも必要とされず、鏡面加工した
アルミニウム基板上に直接下地層としてCrを製膜する
こともできる。
The substrate used in the present invention generally includes hard glass,
A disk-shaped substrate made of aluminum or an aluminum alloy is used, and an aluminum substrate is particularly preferably used. Aluminum substrates are usually processed to a predetermined thickness, and after mirror-finishing the surface, a hard non-6N metal such as a nickel-phosphorus (Ni-P) alloy is applied as a first underlayer by electroless plating or anodizing. After that, a Cr film is formed and used as a second underlayer. Note that the above-mentioned first underlayer is not necessarily required, and a Cr film may be formed directly on the mirror-finished aluminum substrate as the underlayer.

本発明においては、上記した基板上にCr下地層薄膜を
低圧希ガス雰囲気下で製膜する際、該希ガスに特定量の
水分(H2O)を共存させて製膜することを特徴とする
ものである。該希ガス中の水分共存量としては、製膜時
の水分分圧で1×1O−5torr以上、好ましくはl
Xl0−’〜1xlO−3torrの範囲、更に好まし
くは2×10−5〜lXl0−’torrの範囲である
。この製膜時の水分分圧が1xlO”5torr未満で
は、得られる磁気記録媒体の保bl力の向上効果が十分
に得られないため好ましくない。このような水分分圧の
水分を希ガス中に共存させる方法には特に制限はなく、
種々の方法が採用できる。例えば、希ガスを木で湿潤さ
せた状態で製膜装置へ導入する方法は望ましい方法であ
る。
The present invention is characterized in that when forming a Cr underlayer thin film on the above-mentioned substrate in a low-pressure rare gas atmosphere, the film is formed in the presence of a specific amount of moisture (H2O) in the rare gas. It is. The coexistence amount of water in the rare gas is 1 x 1 O-5 torr or more, preferably l
It is in the range of Xl0-' to 1xlO-3 torr, more preferably in the range of 2x10-5 to lXl0-'torr. If the water partial pressure at the time of film formation is less than 1xlO"5 torr, it is not preferable because the effect of improving the coercive force of the obtained magnetic recording medium will not be sufficiently obtained. If water with such a water partial pressure is contained in a rare gas, it is not preferable. There are no particular restrictions on how they can coexist;
Various methods can be adopted. For example, it is a desirable method to introduce the noble gas into the film forming apparatus while moistened with wood.

また、製膜方法としては、真空引きした後低圧希ガス雰
囲気下で製膜する方法であれば特に制限されないが、一
般に真空蒸着法、スパッタリング法、イオンブレーティ
ング法等が採用可能である。これらのうち、特にスパッ
タリング法が好適に用いられる。なお、希ガスとしては
、アルゴン、ヘリウム、ネオン、クリプトン、キセノン
等が挙げられ、特にアルゴン(Ar)が好適に使用され
る。
Further, the film forming method is not particularly limited as long as it is a method of forming a film in a low pressure rare gas atmosphere after evacuation, but generally a vacuum evaporation method, a sputtering method, an ion blating method, etc. can be adopted. Among these, sputtering method is particularly preferably used. Note that examples of the rare gas include argon, helium, neon, krypton, and xenon, and argon (Ar) is particularly preferably used.

以下、Cr下地層薄膜の形成にスパッタリング法を用い
る場合について詳細に説明する。
Hereinafter, the case where the sputtering method is used to form the Cr underlayer thin film will be described in detail.

スパッタリング法としては、一般に前記基板上にCr下
地層薄膜をスパッタリング法によって製膜す乞際に、通
常採用される装置及び条件がすべて採用可能である。例
えば、基板ホルダーに装着させた基板とCrターゲット
電極とを対向させた状態で、真空排気したチャンバー内
到達圧力をlXl0−6torr以下、製膜圧力、即ち
水分を含有するAr等の希ガス圧力(希ガス+水分の合
計圧力)を5X 10−’〜2X 10−2to r 
r、望ましくは1 x 10−3〜I X 10−2t
o r rの範囲、水分の分圧を1xlO−5torr
以上、好ましくはl X 10−”〜l X 10−’
to r r、更に好ましくは2X 10−5〜I X
 I O−’仁orrの範囲で、基板温度を150℃以
上、望ましくは180〜300℃の範囲の条件下でスパ
ッタリングを行ない、該基板上にCr薄膜を被着形成さ
せる。なお、希ガスと水分との合計圧力に対する水分分
圧の割合は通常0.1/+oo〜10/100、望まし
くは0.1/100〜5/100の範囲内が好ましい。
As the sputtering method, it is possible to use all the equipment and conditions that are normally employed when forming a Cr underlayer thin film on the substrate by the sputtering method. For example, with the substrate mounted on the substrate holder and the Cr target electrode facing each other, the ultimate pressure in the evacuated chamber should be set to 1Xl0-6 torr or less, and the film forming pressure, i.e., the pressure of a rare gas such as Ar containing moisture ( Total pressure of rare gas + moisture) from 5X 10-' to 2X 10-2 tor
r, preferably 1 x 10-3 to I x 10-2t
o r r range, water partial pressure 1xlO-5torr
Above, preferably l x 10-'' to l x 10-'
tor r, more preferably 2X 10-5 to IX
A thin Cr film is deposited on the substrate by sputtering at a substrate temperature of 150 DEG C. or higher, preferably 180 DEG to 300 DEG C., in a range of IO-'N orr. Note that the ratio of the water partial pressure to the total pressure of the rare gas and water is usually within the range of 0.1/+oo to 10/100, preferably 0.1/100 to 5/100.

スパッタリング装置としては、通常のDCマグネトロン
スパッタ装置、又はRFマグネトロンスパッタ装置等が
採用される。
As the sputtering device, a normal DC magnetron sputtering device, an RF magnetron sputtering device, or the like is employed.

このようにして形成されるCr下地層の膜厚は、通常5
0〜3000Aの範囲内とするのが好ましい。
The thickness of the Cr underlayer formed in this way is usually 5
It is preferably within the range of 0 to 3000A.

本発明において、基板のCr下地層薄膜上に形成するC
o系合金bfi性薄膜としては、Co−Cr、Co−N
i、Co−Cr−X、Co−Nf−X、Co−W(タン
グステン)−X等で表わされるCo系合金が使用される
。なお、ここでXとしてはリチウム、ケイ素、カルシウ
ム、チタン。
In the present invention, C formed on the Cr underlayer thin film of the substrate
As the o-based alloy bfi thin film, Co-Cr, Co-N
Co-based alloys represented by i, Co-Cr-X, Co-Nf-X, Co-W (tungsten)-X, etc. are used. In addition, here, X is lithium, silicon, calcium, and titanium.

バナジウム、クロム、ニッケル、ヒ素、イツトリウム、
ジルコニウム、ニオブ、モリブデン、ルテニウム、ロジ
ウム、銀、アンチモン、ハフニウム タンタル、タング
ステン、レニウム、オスミウム、イリジウム、白金、金
、ランタン、セリウム プラセオジム、ネオジム、プロ
メチウム、サマリウム、ユウロピウムからなる群より選
ばれた1種又は2種以上の元素が挙げられる。
vanadium, chromium, nickel, arsenic, yttrium,
Zirconium, niobium, molybdenum, ruthenium, rhodium, silver, antimony, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, gold, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium. Or two or more kinds of elements can be mentioned.

これらのCo系合金からなる1ift性薄膜層は、通常
、真空蒸着法、イオンブレーティング法、スパッタリン
グ法、無電解メツキ法等の手段によって基板のCr下地
層薄膜上に被着形成される。
The 1ift thin film layer made of these Co-based alloys is usually deposited on the Cr underlayer thin film of the substrate by means such as vacuum evaporation, ion blasting, sputtering, electroless plating, or the like.

Co系合金磁性薄膜の製膜方法としては、特にスパッタ
リング法が好適である。
A sputtering method is particularly suitable as a method for forming the Co-based alloy magnetic thin film.

スパッタリング法としては、一般に基板の下地層上にC
o系合金からなるl1Ti性薄膜層をスパッタリング法
によって被着形成させる際に、通常採用される装置及び
条件をすべて採用することが可能である。例えば、真空
排気したチャンバー内到達圧力をlXl0−’torr
以下、Ar等の希ガス圧力を5X10−’〜2X10−
2torr、望ましくはlXl0−’〜lXl0−2t
orrの範囲で、基板温度を150℃以上、望ましくは
180〜300℃の範囲の条件下でスパッタリングを実
施する。
In the sputtering method, C is generally applied on the base layer of the substrate.
When depositing the l1Ti thin film layer made of the o-based alloy by sputtering, it is possible to use all the equipment and conditions that are normally employed. For example, the ultimate pressure inside the evacuated chamber is lXl0-'torr
Below, the pressure of rare gas such as Ar is 5X10-' to 2X10-
2 torr, preferably lXl0-' to lXl0-2t
Sputtering is carried out under conditions where the substrate temperature is 150°C or higher, preferably 180 to 300°C.

スパッタリング装置としては、通常のDCマグネトロン
スパッタ装置、又はRFマグネトロンスパッタ装置等が
採用される。
As the sputtering device, a normal DC magnetron sputtering device, an RF magnetron sputtering device, or the like is employed.

本発明において、Co系合金磁性薄膜層の膜厚は通常2
00〜1500Aの範囲内とするのが好適である。
In the present invention, the thickness of the Co-based alloy magnetic thin film layer is usually 2
It is suitable that it is within the range of 00 to 1500A.

[作用コ 水分分圧lXl0−5torr以上の低圧希ガス雰囲気
で製膜したC「下地層薄膜に、更にCo系合金磁性薄膜
を積層形成することにより、著しく高い保6n力を有す
る6f1気記録媒体が得られる。
[A 6f1 recording medium with an extremely high coercive force by further laminating a Co-based alloy magnetic thin film on the C underlayer thin film formed in a low-pressure rare gas atmosphere with a water partial pressure of 1X10-5 torr or higher. is obtained.

[実施例コ 以下に実施例及び比較例を挙げて本発明をより具体的に
説明するが、本発明はその要旨を超えない限り、以下の
実施例に限定されるものではない。
[Examples] The present invention will be explained in more detail by referring to Examples and Comparative Examples below, but the present invention is not limited to the following Examples unless it exceeds the gist thereof.

実施例1〜3、比較例1.2 表面にN1−Pメツキ処理を施したアルミニウム合金か
らなるディスク状基板とCrターゲットとを対向させた
状態で、第1表に示す条件下でスパッタリングを行ない
、該基板上にCr下地層薄1(2oooA)を被着形成
させた。次いで、Go−Ni−Cr合金ターゲットを用
い、チャンバー内圧力lXl0−”torr以下、製膜
圧力(アルゴン圧力)4X10−”torr、基板温度
210℃の条件下でスパッタリングを行ない、該基板の
Cr下地層上にC07O−Nj20  Cr、。
Examples 1 to 3, Comparative Example 1.2 Sputtering was performed under the conditions shown in Table 1 with a Cr target facing a disk-shaped substrate made of an aluminum alloy whose surface was plated with N1-P. A thin 1 (2oooA) Cr underlayer was deposited on the substrate. Next, using a Go-Ni-Cr alloy target, sputtering was performed under the conditions of a chamber pressure of 1X10-'' torr or less, a film forming pressure (argon pressure) of 4X10-'' torr, and a substrate temperature of 210°C. C07O-Nj20 Cr, on top of the formation.

(数字は原子%を表わす。)磁性薄11i (640A
)を被着形成した。Br・δ(TA留磁束密度(Br)
と磁性薄膜層の膜厚(δ)との稜)は515G・μmで
あった。
(Numbers represent atomic percent.) Magnetic Thin 11i (640A
) was deposited. Br・δ (TA residual magnetic flux density (Br)
The thickness (δ) of the magnetic thin film layer) was 515 G·μm.

得られたbn気ディスクの保磁力を試料振動型6fi力
計で測定し、結果を第1表に示した。
The coercive force of the obtained BN air disk was measured using a sample vibrating type 6FI force meter, and the results are shown in Table 1.

[発明の効果〕 以上詳述した通り、本発明の磁気記録媒体の製造方法に
よれば、高い保磁力を有する高特性磁気記録媒体を容易
に製造することができ磁気記録媒体のより一層の高密度
記録化が可能とされる。
[Effects of the Invention] As detailed above, according to the method for manufacturing a magnetic recording medium of the present invention, a high-performance magnetic recording medium having a high coercive force can be easily manufactured, and a magnetic recording medium with even higher performance can be manufactured. Density recording is possible.

Claims (1)

【特許請求の範囲】[Claims] (1)基板上にクロム下地層薄膜及びコバルト系合金磁
性薄膜を順次積層形成する磁気記録媒体の製造方法にお
いて、基板上にクロム下地層薄膜を低圧希ガス雰囲気で
製膜する際、該希ガスに水分を1×10^−^5tor
r以上の分圧で共存させて製膜することを特徴とする磁
気記録媒体の製造方法。
(1) In a method for manufacturing a magnetic recording medium in which a chromium underlayer thin film and a cobalt-based alloy magnetic thin film are sequentially laminated on a substrate, when forming a chromium underlayer thin film on a substrate in a low-pressure rare gas atmosphere, the rare gas Add 1×10^-^5torr of water to
1. A method for manufacturing a magnetic recording medium, characterized by forming a film at a partial pressure equal to or higher than r.
JP14235689A 1989-06-05 1989-06-05 Production of magnetic recording medium Pending JPH038119A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14235689A JPH038119A (en) 1989-06-05 1989-06-05 Production of magnetic recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14235689A JPH038119A (en) 1989-06-05 1989-06-05 Production of magnetic recording medium

Publications (1)

Publication Number Publication Date
JPH038119A true JPH038119A (en) 1991-01-16

Family

ID=15313473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14235689A Pending JPH038119A (en) 1989-06-05 1989-06-05 Production of magnetic recording medium

Country Status (1)

Country Link
JP (1) JPH038119A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05101378A (en) * 1991-05-14 1993-04-23 Internatl Business Mach Corp <Ibm> Magnetic recording hard disk and manufacture thereof and method for controlling magnetism of thin-film magnetic recording layer
EP2366745A1 (en) 2010-03-18 2011-09-21 Fujifilm Corporation Ink composition, ink set and inkjet image forming method
WO2012014955A1 (en) 2010-07-30 2012-02-02 富士フイルム株式会社 Novel azo compound, aqueous solution, ink composition, ink for inkjet recording, inkjet recording method, ink cartridge for inkjet recording and inkjet recording
EP2487208A1 (en) 2011-02-09 2012-08-15 Fujifilm Corporation Ink composition, ink set and inkjet image forming method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05101378A (en) * 1991-05-14 1993-04-23 Internatl Business Mach Corp <Ibm> Magnetic recording hard disk and manufacture thereof and method for controlling magnetism of thin-film magnetic recording layer
EP2366745A1 (en) 2010-03-18 2011-09-21 Fujifilm Corporation Ink composition, ink set and inkjet image forming method
WO2012014955A1 (en) 2010-07-30 2012-02-02 富士フイルム株式会社 Novel azo compound, aqueous solution, ink composition, ink for inkjet recording, inkjet recording method, ink cartridge for inkjet recording and inkjet recording
EP2487208A1 (en) 2011-02-09 2012-08-15 Fujifilm Corporation Ink composition, ink set and inkjet image forming method

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