JPH0247844A - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPH0247844A
JPH0247844A JP63199364A JP19936488A JPH0247844A JP H0247844 A JPH0247844 A JP H0247844A JP 63199364 A JP63199364 A JP 63199364A JP 19936488 A JP19936488 A JP 19936488A JP H0247844 A JPH0247844 A JP H0247844A
Authority
JP
Japan
Prior art keywords
bonding
bonded
ultrasonic
capillary
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63199364A
Other languages
Japanese (ja)
Inventor
Osamu Umeda
修 梅田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu General Ltd
Original Assignee
Fujitsu General Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu General Ltd filed Critical Fujitsu General Ltd
Priority to JP63199364A priority Critical patent/JPH0247844A/en
Publication of JPH0247844A publication Critical patent/JPH0247844A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/1016—Shape being a cuboid
    • H01L2924/10161—Shape being a cuboid with a rectangular active surface

Abstract

PURPOSE:To make it possible to do bonding to Pd-Ag at low temperature and that firmly by doing bonding only in the same direction as the end part of ultrasonic application. CONSTITUTION:At the end of an ultrasonic oscillation horn 2 is installed a capillary 2, and the wire supplied from the said capillary 2 is ball-bonded by the joint use of heat and ultrasonic. In this case, if the direction of ultrasonic application is defined as A, first as to one side of a chip wires W1, W2 and W3 which are in the same direction as that of ultrasonic application, that is, parallel with the horn 1 are bonded. Next, with the chip 3 kept as it is, wires W4, W5 and W6 at the opposite side are bonded. After that, the chip 3 is rotated 90 deg., and as to the remaining two sides wires W7, W8 and W9 parallel with the horn 1 are bonded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明はワイヤーボンディング方法に関し、さらに詳
しく言えば、ボンディングワイヤーをＰｄ−八ｇに対し
て低温でボールボンディングするボンディング方法に関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a wire bonding method, and more specifically, to a bonding method in which a bonding wire is ball-bonded to Pd-8g at a low temperature.

〔従来の技術〕[Conventional technology]

ワイヤーボンディングは、その接続に用いられるエネル
ギーの種類からすると、■熱圧着法、■超音波法、■熱
−超音波併用法とに分けられる。Wire bonding can be divided into 1) thermocompression bonding method, 2) ultrasonic method, and 2) combined heat-ultrasonic method based on the type of energy used for the connection.

用いられる線材としては、＾Ｕ（主として２５μ＃）、
Ａ１（２５ｊｅ〜６００Ｊ＄）、　Ｃｕ（２５＊φ）な
どが知られている。The wire rods used are ^U (mainly 25μ#),
A1 (25je~600J$), Cu (25*φ), etc. are known.

また、ボンディング部の形状から分けると、ボールボン
ディング、ウェッジボンディングおよびステッチボンデ
ィングがある。Furthermore, when classified based on the shape of the bonding part, there are ball bonding, wedge bonding, and stitch bonding.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

現在、主流となっているのは、２５Ｐ＄Ａｕワイヤーに
よる熱−超音波併用のボールボンディングである。Currently, the mainstream is ball bonding using a combination of heat and ultrasonic waves using a 25P$ Au wire.

厚膜ＩＧへの低温ボンディング（１８０℃以下）を考え
ると、ステッチの材料にＡｕを使用するのがもっとも手
軽といえるが、これにはその材料自体コストがかかり、
また、印刷、焼成などの工程が増えるなどの欠点があっ
た。When considering low-temperature bonding (below 180°C) to thick film IG, it is easiest to use Au as the material for the stitches, but this material itself is costly.
Additionally, there were drawbacks such as the need for additional steps such as printing and firing.

また、Ｐｄ−Ａｇにボンディングする場合には、２５０
℃以上の高温が必要なため、ハンダによる部品の実装を
ワイヤーボンディング後に行なわなければならないとい
う欠点がある。In addition, when bonding to Pd-Ag, 250
Since high temperatures of ℃ or higher are required, there is a drawback that components must be mounted with solder after wire bonding.

この発明は、上記した従来の事情に鑑みなされたもので
、その目的は、Ｐｄ−Ａｇに対するボンディングを低温
でしかも強固に行なうことができるようにしたワイヤー
ボンディング方法を提供することにある。The present invention was made in view of the above-mentioned conventional circumstances, and its purpose is to provide a wire bonding method that allows bonding to Pd-Ag to be performed firmly at low temperatures.

〔課題を解決するための手段〕[Means to solve the problem]

上記目的を達成するため、この発明においては、超音波
振動ホーンの先端部にキャピラリーを設け、同キャピラ
リーから供給されるボンディングワイヤーをＰｄ−Ａｇ
に対して低温でボールボンディングするに際し、 超音波の印加方向と同一方向のみにボールボンディング
を行なうことを特徴としている。In order to achieve the above object, in this invention, a capillary is provided at the tip of the ultrasonic vibration horn, and the bonding wire supplied from the capillary is made of Pd-Ag.
It is characterized by performing ball bonding only in the same direction as the ultrasonic application direction when performing ball bonding at low temperatures.

〔作　　　用〕[For production]

ボールボンディングには、ボンディングの方向性がない
ということが利点とされているが、これに超音波を併用
した場合には、明らかに方向性がでてくる。　Ｐｄ−Ａ
ｇへの低温ボンディングを、超音波印加方向と同方向と
垂直方向とで比較した場合、同方向のワイヤー強度は垂
直方向に比べて２〜３ｇ程度高くなる。An advantage of ball bonding is that there is no directionality in the bonding, but when ultrasonic waves are used in conjunction with this, the directionality clearly appears. Pd-A
When low-temperature bonding to g is compared in the same direction as the ultrasonic application direction and in the perpendicular direction, the wire strength in the same direction is about 2 to 3 g higher than in the perpendicular direction.

〔実　施　例〕〔Example〕

以下、この発明の実施例を添付図面を参照しながら詳細
に説明する。Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

このワイヤーボンディング方法によると、第１図に示さ
れているように、超音波振動ホーン１の先端部にキャピ
ラリー２が取付けられ、同キャピラリー２から供給され
るワイヤーが熱−超音波併用にてボールボンディングさ
れる。According to this wire bonding method, as shown in FIG. 1, a capillary 2 is attached to the tip of an ultrasonic vibration horn 1, and a wire supplied from the capillary 2 is bonded to a ball using both heat and ultrasonic waves. Bonded.

この場合、超音波の印加方向をＡとすれば、第２図に示
されているように、まず、チップ３の一辺について超音
波の印加方向と同一方向、すなわちホーン１と平行なワ
イヤーＷｔ　、Ｗ２−　Ｗａがボンディングされる。次
に、チップ３はそのままの状態として対向する辺のワイ
ヤーＷ４＝　Ｗｂ　−Ｗ−がボンディングされる。しか
るのち、チップ３を９０度回転させて、残る二辺につい
てホーン１と平行なワイヤーＷ、、Ｗ、およびＷ９がボ
ンディングされる。上記のように、この方法によれば、
ウェッジボンディングと異なり、１８０度対向するワイ
ヤーについてもチップ３を反転させることなく、ボンデ
ィングすることができる。In this case, if the direction of application of the ultrasonic wave is A, as shown in FIG. W2-Wa is bonded. Next, the wires W4=Wb-W- on the opposing sides are bonded while the chip 3 remains as it is. Thereafter, the chip 3 is rotated 90 degrees, and wires W, , W, and W9 parallel to the horn 1 are bonded to the remaining two sides. As mentioned above, according to this method,
Unlike wedge bonding, wires facing 180 degrees can be bonded without inverting the chip 3.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、この発明によれば、超音波の印加
方向と同一方向のみにボールボンディングを行なうよう
にしたことにより、Ｐｄ−Ａｇに対するボンディングを
低温でしかも強固に行なうことができるという効果が奏
される。As explained above, according to the present invention, by performing ball bonding only in the same direction as the direction in which ultrasonic waves are applied, it is possible to perform bonding to Pd-Ag firmly at a low temperature. It is played.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図はこの発明の実施に供されるボンディング装置の
概略的な側面図、第２図はそのボンディング方法の一例
を示す工程図である。 図中、１は超音波振動ホーン、２はキャピラリ、３はチ
ップ、Ｗはワイヤーである。 第１図 超音波の印加方向 第２図FIG. 1 is a schematic side view of a bonding apparatus used for carrying out the present invention, and FIG. 2 is a process diagram showing an example of the bonding method. In the figure, 1 is an ultrasonic vibration horn, 2 is a capillary, 3 is a chip, and W is a wire. Figure 1 Direction of ultrasound application Figure 2

Claims (1)

【特許請求の範囲】[Claims] （１）超音波振動ホーンの先端部にキャピラリーを設け
、同キャピラリーから供給されるボンディングワイヤー
をＰｄ−Ａｇに対して低温でボールボンディングするに
際し、 超音波の印加方向と同一方向のみにボールボンディング
を行なうことを特徴とするワイヤーボンディング方法。(1) A capillary is provided at the tip of the ultrasonic vibration horn, and when ball bonding the bonding wire supplied from the capillary to Pd-Ag at low temperature, ball bonding is performed only in the same direction as the ultrasonic application direction. A wire bonding method characterized by:
JP63199364A 1988-08-10 1988-08-10 Wire bonding method Pending JPH0247844A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63199364A JPH0247844A (en) 1988-08-10 1988-08-10 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63199364A JPH0247844A (en) 1988-08-10 1988-08-10 Wire bonding method

Publications (1)

Publication Number Publication Date
JPH0247844A true JPH0247844A (en) 1990-02-16

Family

ID=16406531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63199364A Pending JPH0247844A (en) 1988-08-10 1988-08-10 Wire bonding method

Country Status (1)

Country Link
JP (1) JPH0247844A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08153759A (en) * 1994-11-29 1996-06-11 Nec Yamagata Ltd Single-point bonder and manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08153759A (en) * 1994-11-29 1996-06-11 Nec Yamagata Ltd Single-point bonder and manufacture of semiconductor device

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