JPH0244800B2 - - Google Patents

Info

Publication number
JPH0244800B2
JPH0244800B2 JP57166121A JP16612182A JPH0244800B2 JP H0244800 B2 JPH0244800 B2 JP H0244800B2 JP 57166121 A JP57166121 A JP 57166121A JP 16612182 A JP16612182 A JP 16612182A JP H0244800 B2 JPH0244800 B2 JP H0244800B2
Authority
JP
Japan
Prior art keywords
reaction
tube
reaction tube
substrate
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57166121A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5954698A (ja
Inventor
Kazumi Kasai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57166121A priority Critical patent/JPS5954698A/ja
Publication of JPS5954698A publication Critical patent/JPS5954698A/ja
Publication of JPH0244800B2 publication Critical patent/JPH0244800B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP57166121A 1982-09-24 1982-09-24 単結晶成長装置 Granted JPS5954698A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57166121A JPS5954698A (ja) 1982-09-24 1982-09-24 単結晶成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57166121A JPS5954698A (ja) 1982-09-24 1982-09-24 単結晶成長装置

Publications (2)

Publication Number Publication Date
JPS5954698A JPS5954698A (ja) 1984-03-29
JPH0244800B2 true JPH0244800B2 (enExample) 1990-10-05

Family

ID=15825415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57166121A Granted JPS5954698A (ja) 1982-09-24 1982-09-24 単結晶成長装置

Country Status (1)

Country Link
JP (1) JPS5954698A (enExample)

Also Published As

Publication number Publication date
JPS5954698A (ja) 1984-03-29

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