JPH0243367A - Glow discharge decomposing device - Google Patents

Abstract

PURPOSE:To form a thin film of amorphous Si at a high rate on a substrate to be treated with good efficiency of utilizing gaseous SiH4 by applying a magnetic field to a glow discharge generating region at the time of decomposing the gaseous SiH4 by glow discharge and forming the thin film of amorphous Si on the substrate. CONSTITUTION:A cylindrical electrode 2 made of Al for glow discharge is provided in a cylindrical reaction vessel 1 made of metal and gaseous SiH4 ejection ports 9 are bored over the entire surface thereof. The cylindrical substrate 4 mounted to a cylindrical substrate support 3 is disposed to the inner central part thereof. The gaseous SiH4 is introduced into the vessel 1 from a gas introducing port 8 and is blown from the ejection ports 9 to the surface of the substrate 4 which is heated by a heater 6 and is rotated by a motor 7. The glow discharge is simultaneously generated by the vessel 1 by a high-frequency power source 1 to decompose the SiH4 and to form the thin film of the amorphous Si on the surface of the substrate 4. Many magnet parts consisting of permanent magnets 13a and ferromagnetic materials 13b such as Ni are provided to the outer peripheral surface of an electrode plate 2 for glow discharge on both sides of the gas ejection ports 9, by which the magnetic fields of the glow discharge region are increased and the thin film of the amorphous Si is formed at the high rate on the substrate 2 with the good efficiency of the gaseous raw materials.

Description

[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a glow discharge decomposition device capable of forming an amorphous silicon film, etc., and in particular to a glow discharge decomposition device capable of increasing the film formation rate by applying a magnetic field to the glow discharge generation region. This invention relates to a discharge decomposition device.

[Prior art and its problems]

Amorphous silicon photoreceptor drums manufactured by the glow discharge decomposition method have already been put into practical use.
The thickness of the photoreceptor drum (abbreviated as 3i) is generally about 20 to 40 μm, and the time required to manufacture one photoreceptor drum is about 5 to 10 hours due to the large thickness.

Therefore, the present invention has been devised in view of the above, and its purpose is to provide a glow discharge decomposition device that can increase the film formation rate and shorten the required manufacturing time, thereby improving manufacturing efficiency and manufacturing cost. It's about doing.

[Means for solving problems]

According to the present invention, in a glow discharge decomposition device that includes an electrode section inside a reaction chamber into which a film forming gas is introduced, a film forming substrate, and a magnet section that applies a magnetic field to a glow discharge generation area,
There is provided a glow discharge decomposition device characterized in that the magnet portion includes a permanent magnet and a ferromagnetic material supporting the permanent magnet.

〔Example〕

Hereinafter, the present invention will be described in detail using an example in which an A-3I photosensitive drum is manufactured using a glow discharge decomposition apparatus.

FIG. 1 is a schematic front view of the glow discharge decomposition apparatus of this example,
FIG. 2 is a schematic diagram taken along the section line XX in FIG. 1, FIG. 3 shows the external appearance of the magnet section, and FIG. 4 shows the state of magnetic field generation.

First, in FIGS. 1 and 2, 1 is a cylindrical reaction vessel made of metal, and inside this reaction vessel 1 is an AI.
A cylindrical glow release electrode plate 2 made of a non-magnetic metal such as the like is installed, and a cylindrical substrate support 3 and a cylindrical substrate 4 attached to the substrate support 3 are installed inside the electrode plate 2. There is. Reference numeral 5 designates the bottom of the reaction vessel 1, and a tubular heater portion 6 is connected to the bottom portion 5, and the heater portion 6 heats the substrate support 3 and also heats the substrate 4 at the same time. Further, a motor part 7 is installed in the upper part of the reaction container 1, and this motor part 7 is connected to the substrate support 3, and the substrate 4 is rotated together with the substrate support 3 by the motor part 7. .

Reference numeral 8 indicates a gas inlet, and 9 indicates a plurality of gas outlets formed on the electrode plate 2. The a-5T film forming gas is introduced from the gas inlet 8, and is distributed around the substrate 4 through the gas outlet 9. It is sprayed onto a surface and subjected to a glow discharge. Then, the residual gas accompanying the discharge is discharged from the gas discharge section 10.

Further, 11 is a high frequency power source, one output terminal of which is installed on the ground side, the other output terminal is connected to the peripheral wall of the reaction vessel 1, and the electrode plate 2 is electrically connected to this peripheral wall. Glow discharge power is applied.

Note that the arrow in the figure indicates the direction of gas flow, and 12 is an insulating ring body.

In the glow discharge decomposition apparatus having the above configuration, the inventors installed a plurality of magnet parts 13 on the outer peripheral surface of the electrode plate 2.

As shown in FIGS. 2 and 3, this magnet portion 13 includes a permanent magnet 13a (for example, made of rare earth metal, alnico, etc.),
It is composed of a ferromagnetic material 13b (made of Fe, Ni, etc.).

That is, permanent magnets 13a of a certain size are embedded in the outer circumferential surface of the electrode plate 2 in a vertical line, and a long ferromagnetic material is embedded in each row of the magnets 13a to support each row. 13b is arranged. Moreover, in forming the magnet part 13 in this way, the gas jet port 9 is arranged between the adjacent ferromagnetic bodies 13b.

When the magnet portion 13 is formed, as shown in FIG. 4, the magnetic field on the south pole side of the magnetic field generated by the magnet 13a is rotated to the north pole side by the ferromagnetic material 13b, thereby causing the magnetic field on the north pole side. The intensity increases, which results in a larger magnetic field being applied to the glow discharge generation region.

Thus, according to the glow discharge decomposition apparatus of this example, a-8
i The film-forming gas is blown out from the gas outlet 9, and at the same time a large magnetic field is applied to the gas, and the substrate 4 is
While being set at a temperature of 00 to 300°C, it rotates, and glow discharge occurs between the substrate 4 and the electrode plate 2. Therefore, a cyclotron rotational movement of electrons occurs inside the generated plasma, which increases the gas decomposition efficiency.
The utilization efficiency of gas that contributes to film formation is increased, and as a result,
We were able to further increase the film deposition rate.

Further, according to the present invention, in the glow discharge decomposition apparatus having the above configuration, the magnetic poles of the two closest magnets among the permanent magnets 13a on the opposing sides are in an S-pole-N-pole relationship with each other. As a result, a strong magnetic field is generated between the magnets, further increasing the gas decomposition efficiency, and as a result, the film forming rate can be further increased. Furthermore, if the distance between adjacent ferromagnetic bodies 13b is made as small as possible, the magnetic field will increase accordingly,
This also allows the film formation rate to be further increased.

(Experimental Example 1) In the above glow discharge decomposition apparatus, 5i)I, gas was
The deposition rate of the a-5t film was measured while introducing the a-5t film at a flow rate of 0.000sec, setting the substrate temperature at 26090, and changing the high-frequency power for glow discharge in many ways, and the results are shown in Figure 5. was gotten.

In the figure, the horizontal axis is the high-frequency power amount, the vertical axis is the film formation rate, and the circle mark is the measurement plot of this example.

As a comparative example, the present inventors placed the permanent magnet 13a as it is, but also measured the film formation speed when the ferromagnetic material 13b was not placed and other film formation conditions were set to be the same. This measurement plot is marked with a Δ symbol.

As is clear from the results shown in FIG. 5, according to the glow discharge decomposition apparatus of the present invention, as the amount of high-frequency power increases, the film-forming speed increases (and the film-forming speed becomes faster than that of the comparative example). It is noticeably larger than that.

(Experiment Example 2) In this example, the high frequency power was set to 600W, the substrate temperature was set to 260°C, and the deposition rate of the a-5i film was varied while changing the flow rate of SiH4 gas in many ways. As a result of the measurement, the results shown in FIG. 6 were obtained.

In the figure, the horizontal axis is the 51g4 gas flow rate, the vertical axis is the film formation rate, and the circle marks are measurement plots of this example. In addition, although the permanent magnet 13a is placed as is, the ferromagnetic material 1
Comparative examples in which the film was formed without 3b are indicated by Δ.

As is clear from the results shown in FIG. 6, according to the glow discharge decomposition apparatus of the present invention, the film formation rate increases as the SiH gas flow rate increases, but the film formation rate is lower than that of the conventional one. It can be seen that it is significantly larger.

〔Effect of the invention〕

As described above, according to the glow discharge decomposition apparatus of the present invention, the decomposition efficiency of the film-forming gas increases due to the increase in the magnetic field, and accordingly, the ratio of the gas provided for film-forming increases. , the gas utilization efficiency is increased, and the film formation rate is also increased, resulting in improved manufacturing efficiency and manufacturing cost.

Note that the present invention is not limited to the above embodiments,
Various modifications may be made without departing from the gist of the present invention.
There is no problem with improvement, and various gases other than the aSi film forming gas may be used.

[Brief explanation of the drawing]

Fig. 1 is a schematic front view of the glow discharge decomposition apparatus of the present invention;
The figure is a schematic diagram taken along the section line X-X in Figure 1, Figure 3 is an external view of the magnet section, Figure 4 is a diagram showing the state of magnetic field generation in the magnet section, and Figure 5 is high-frequency power and film formation. A diagram showing the relationship between speeds,
FIG. 6 is a diagram showing the relationship between SiH4 gas flow rate and film formation rate. 1... Reaction vessel 2... Electrode plate for glow discharge 4... Substrate 9... Gas outlet I3... Magnet part 13a... Permanent magnet 13b... Ferromagnetic material patent applicant (663) Kinju Anjo, Representative of Kyocera Corporation

Claims (5)

[Claims] (1) An electrode section inside the reaction chamber into which the film-forming gas is introduced;
A glow discharge decomposition device comprising a film-forming substrate and a magnet section that applies a magnetic field to a glow discharge generation region, wherein the magnet section comprises a permanent magnet and a ferromagnetic material supporting the permanent magnet. Decomposition equipment. (2) The glow discharge decomposition device according to claim (1), wherein the electrode portion is cylindrical. (3) The glow discharge decomposition device according to claim (2), wherein a cylindrical substrate is installed inside the electrode section. (4) The glow discharge decomposition device according to claim (2) or (3), wherein the film-forming gas is blown out from a plurality of gas jet ports formed in the electrode portion. (5) Claim (1), wherein the magnet part is arranged in the electrode part;
The glow discharge decomposition device according to (2), (3) or (4).