JPH0242737A - Wire bonding pad device - Google Patents
Wire bonding pad deviceInfo
- Publication number
- JPH0242737A JPH0242737A JP1144105A JP14410589A JPH0242737A JP H0242737 A JPH0242737 A JP H0242737A JP 1144105 A JP1144105 A JP 1144105A JP 14410589 A JP14410589 A JP 14410589A JP H0242737 A JPH0242737 A JP H0242737A
- Authority
- JP
- Japan
- Prior art keywords
- wire bonding
- wire
- bonding pad
- bonding pads
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 abstract description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05553—Shape in top view being rectangular
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0612—Layout
- H01L2224/0615—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
- H01L2224/06153—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry with a staggered arrangement, e.g. depopulated array
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/494—Connecting portions
- H01L2224/4943—Connecting portions the connecting portions being staggered
- H01L2224/49431—Connecting portions the connecting portions being staggered on the semiconductor or solid-state body
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/494—Connecting portions
- H01L2224/4943—Connecting portions the connecting portions being staggered
- H01L2224/49433—Connecting portions the connecting portions being staggered outside the semiconductor or solid-state body
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
(産業上の利用分野)
本発明は例えばファクシミリの感熱記録用ヘッド等に用
いられるワイヤボンディングパッド装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to a wire bonding pad device used, for example, in a thermal recording head of a facsimile.
(従来の技術)
従来、ファクシミリの感熱記録用ヘッドは第3図に示す
ように構成される。即ち、11はセラミック等の絶縁基
板上に薄膜、厚膜等の技術によって、−列に高密度で並
べた多数の発熱抵抗体で。(Prior Art) Conventionally, a facsimile thermal recording head is constructed as shown in FIG. That is, numeral 11 is a large number of heating resistors arranged in rows with high density using thin film, thick film, etc. techniques on an insulating substrate made of ceramic or the like.
この発熱抵抗体11は連続する複数個(この例では8個
)からなる複数のブロックに分割されている。This heating resistor 11 is divided into a plurality of blocks each consisting of a plurality of consecutive pieces (eight pieces in this example).
前記発熱抵抗体11の各ブロックは夫々対応してダイオ
ードアレイ12に接続される。このダイオードアレイ1
2はこの例では1チツプ内に8個のダイオード121
を納めたフリップチップ型のダイオードアレイである。Each block of the heating resistor 11 is connected to a diode array 12 in a corresponding manner. This diode array 1
2 is 8 diodes 121 in one chip in this example.
It is a flip-chip type diode array containing a
前記発熱抵抗体11は各一端が対応するダイオードアレ
イ12内の各ダイオード121 を介してブロック選択
電極13にブロック毎に共通接続され、各他端が各ブロ
ック間で同一位置にあるものどうし共通接続されて個別
選択電極14に接続される。The heat generating resistor 11 has one end commonly connected to the block selection electrode 13 for each block via each diode 121 in the corresponding diode array 12, and each other end commonly connected between the blocks located at the same position. and connected to the individual selection electrodes 14.
而して、ファクシミリの記録は、所望の発熱抵抗体11
に感熱紙を接触させて行われる。Therefore, the facsimile record indicates the desired heating resistor 11.
This is done by bringing thermal paper into contact with the
このような感熱記録用ヘッドでは発熱抵抗体11の数が
数百ないし千数百程度と極めて多数であるため、第3図
に示すように、発熱抵抗体11に直列に回り込み防止用
ダイオード121を接続したマトリクス配線によって駆
動回路数の低減を図っている。この場合に問題となるの
は、数百から千数百個という多数の発熱抵抗体11と回
り込み防止用ダイオード121とをいかに作業能率よく
接続し、 かつヘッド全体をコンパクトに構成するかと
いう点である。この点を解決するため、第4図(a)、
(b)に示すように、複数個のダイオードを1チツプ
内に納めたダイオードアレイ12を、発熱抵抗体11が
形成されている基板15上に配設し、このダイオードア
レイ12を発熱抵抗体11に直接接続してヘッドを小形
にまとめている。ところが、この場合にはダイオードア
レイ12と発熱抵抗体11からの導線16との接続が問
題となる。ダイオードアレイ12と導線16とを接続す
る技術は、半導体素子のボンディング技術として各種の
方法が考えられるが、いずれの方法を用いるにしても、
導線16のポンディングパッド161の相互間隔及びダ
イオードアレイ12のポンディングパッド122の相互
間隔200IJM以下の高密度であると、ボンディング
の信頼性の点が歩留りが急激に低下する。 このため、
第4図(a)。In such a thermal recording head, the number of heating resistors 11 is extremely large, ranging from several hundred to several hundred, so as shown in FIG. The number of drive circuits is reduced by connecting matrix wiring. In this case, the problem is how to efficiently connect the large number of heat-generating resistors 11, ranging from several hundred to several thousand, and the bypass prevention diodes 121, and how to make the entire head compact. be. In order to solve this problem, Fig. 4(a),
As shown in (b), a diode array 12 in which a plurality of diodes are housed in one chip is disposed on a substrate 15 on which a heat generating resistor 11 is formed, and this diode array 12 is placed on a substrate 15 on which a heat generating resistor 11 is formed. The head is compact by connecting directly to the However, in this case, the connection between the diode array 12 and the conductive wire 16 from the heating resistor 11 becomes a problem. As a technique for connecting the diode array 12 and the conducting wire 16, various methods can be considered as bonding techniques for semiconductor elements, but whichever method is used,
If the mutual spacing between the bonding pads 161 of the conductor 16 and the mutual spacing between the bonding pads 122 of the diode array 12 is less than 200 IJM, the bonding reliability and yield will drop sharply. For this reason,
Figure 4(a).
(b)に示すように、ダイオードアレイ12のポンディ
ングパッド122及び導線I6のポンディングパッド1
61は夫々直線状ではなく千鳥状に配設される。As shown in (b), the bonding pad 122 of the diode array 12 and the bonding pad 1 of the conductor I6
61 are arranged not in a straight line but in a staggered manner.
しかしなから、第4図(a)、 (b)に示す様にポ
ンディングパッド161を千鳥状に配設しても、そのポ
ンディングパッド161の高密度化には限界があった。However, even if the bonding pads 161 are arranged in a staggered manner as shown in FIGS. 4(a) and 4(b), there is a limit to increasing the density of the bonding pads 161.
(発明が解決しようとする問題点)
上述の問題点に鑑みて9本発明は高密度に配置されたワ
イヤボンディングパッド装置の製造方法を提供すること
を目的とする。(Problems to be Solved by the Invention) In view of the above-mentioned problems, it is an object of the present invention to provide a method for manufacturing a wire bonding pad device arranged at high density.
(問題点を解決するための手段)
上記目的を達成するために、本発明のワイヤボンディン
グパッド装置は、
一方の部品のワイヤボンディングパッドと他方の部品の
ワイヤボンディングパッドとの距離の比較的近いものと
比較的遠いものとがこの部品のワイヤボンディングパッ
ド1つおきに現われる様な配置とされており、
且つ他方の部品から距離の比較的近いワイヤボンディン
グパッドどうし及び他方の部品から距離の比較的遠いワ
イヤボンディングパッドどうしを電気的に接続するボン
ディングワイヤを備え、複数のワイヤボンディングパッ
ドを一列状に配置した第1のワイヤボンディングパッド
列と、この第1のワイヤボンディングパッド列を構成す
るワイヤボンディングパッドに電気的に接続する導線か
らなる第1の導線群と、
この第1の導線群を構成する導線間に配された複数のワ
イヤボンディングパッドを一列状に配置した第2のワイ
ヤボンディングパッド列と、この第2のワイヤボンディ
ングパッド列を構成するワイヤボンディングパッドに電
気的に接続する導線からなる第2の導線群とを具備し、
前記第2のワイヤボンディングパッド列を構成するワイ
ヤボンディングパッドに対向する部分の前記第1の導線
群を構成する導線の幅は、前記第1の導線群を構成する
他の部分の導線の幅よりも狭く、且つ前記第1の導線群
を構成する偉の部分の導線の幅と前記第2の導線群を構
成する導線の幅とが実質的に等しいことを特徴とするも
のである。(Means for Solving the Problems) In order to achieve the above object, the wire bonding pad device of the present invention provides a wire bonding pad device in which the distance between the wire bonding pad of one component and the wire bonding pad of the other component is relatively short. Wire bonding pads that are relatively close to each other and wire bonding pads that are relatively far from the other component appear on every other wire bonding pad of this component, and wire bonding pads that are relatively far from the other component appear on every other wire bonding pad of this component. A first wire bonding pad row in which a plurality of wire bonding pads are arranged in a line, including bonding wires that electrically connect wire bonding pads to each other, and wire bonding pads constituting this first wire bonding pad row. a first conductive wire group consisting of electrically connected conductive wires; a second wire bonding pad row in which a plurality of wire bonding pads are arranged in a line between the conductive wires constituting the first conductive wire group; a second conductive wire group consisting of conductive wires electrically connected to the wire bonding pads constituting the second wire bonding pad row;
The width of the conductive wires constituting the first conductive wire group in the portion facing the wire bonding pads constituting the second wire bonding pad row is greater than the width of the conductive wires in other portions constituting the first conductive wire group. The conductor wire is also narrow, and the width of the conductor wire in the cross section constituting the first conductor group is substantially equal to the width of the conductor wire constituting the second conductor group.
(作用)
上述の構成をとることにより、本発明のワイヤボンディ
ングパッド装置は、そのワイヤボンディングパッドを高
密度に配置することができる。(Function) By adopting the above-described configuration, the wire bonding pad device of the present invention can arrange its wire bonding pads at high density.
(実施例) 以下図面を参照して本発明の一実施例を説明する。(Example) An embodiment of the present invention will be described below with reference to the drawings.
第1図(a)において、ワイヤボンディングパッド16
1は千鳥状に配置され、 このワイヤボンディングパッ
ド161に電気的に接続する導線16が形成されている
。17は、このワイヤボンディングパッド161にワイ
ヤボンディングされたボンディングワイヤである。この
ワイヤボンディング161に隣接する部分Eの導線16
の幅Cは、他の部分の導線16の幅りよりも狭い。例え
ば、ポンディングパッド161の幅Aを0.14mm、
ワイヤボンディングパッド161と導線16との間隔
Bは0.03!It、導線16の幅狭部の幅Cは0.0
5mm、導線16の幅広部の幅りは0.07+u+、ボ
ンディングワイヤ17の径は0.025mmとすると、
ワイヤボンディングパッド161のピッチPは、0.
11111!1となる。すなわち、導線16はEの部分
の幅を狭くしたことにより、ワイヤボンディングパッド
161の配置密度が高まることになる。In FIG. 1(a), the wire bonding pad 16
1 are arranged in a staggered manner, and conductive wires 16 electrically connected to these wire bonding pads 161 are formed. 17 is a bonding wire wire-bonded to this wire bonding pad 161. Conductive wire 16 in portion E adjacent to this wire bonding 161
The width C of the conductive wire 16 is narrower than the width of the conductive wire 16 in other parts. For example, the width A of the pounding pad 161 is 0.14 mm,
The distance B between the wire bonding pad 161 and the conductive wire 16 is 0.03! It, the width C of the narrow part of the conductor 16 is 0.0
5mm, the width of the wide part of the conductor 16 is 0.07+u+, and the diameter of the bonding wire 17 is 0.025mm.
The pitch P of the wire bonding pads 161 is 0.
It becomes 11111!1. That is, by narrowing the width of the portion E of the conductive wire 16, the arrangement density of the wire bonding pads 161 is increased.
しかし、第1図(a)に示すワイヤボンディングパッド
装置においては、導線16の高さとポンディングパッド
161の高さは第1図(b)に示すように同一高さに形
成される。而して、高密度のボンディングはボンディン
グワイヤ径、ポンディングパッドピッチ及びポンディン
グパッドサイズにより制限される。このため、ワイヤボ
ンディングパッド161のピッチPは、0.11mmが
限界となる。However, in the wire bonding pad device shown in FIG. 1(a), the height of the conducting wire 16 and the height of the bonding pad 161 are formed to be the same height as shown in FIG. 1(b). Thus, high-density bonding is limited by bonding wire diameter, bonding pad pitch, and bonding pad size. Therefore, the pitch P of the wire bonding pads 161 is limited to 0.11 mm.
したがって、第1図(a)に示すワイヤボンディングパ
ッド装置においては、そのワイヤボンデインクパッド1
61の配置の高密度化には限界がある。Therefore, in the wire bonding pad device shown in FIG. 1(a), the wire bonding pad 1
There is a limit to increasing the density of the arrangement of 61.
なお、一実施例においても、第4図(a)、 (b)に
示す様にワイヤボンディングパッド161 を千鳥状に
配置している。すなわち、各部品の複数のワイヤボンデ
ィングパッドの対応するものどうしをワイヤボンディン
グして電気的に接続するに際し、一方の部品のワイヤボ
ンディングパッドと他方の部品のワイヤボンディングパ
ッドとの距離の比較的近いものと比較的遠いものとがこ
の部品の接続端子1つおきに現われる様な配置とされて
おり、且つワイヤボンディングが他方の部品から距離の
比較的近い接続端子どうし及び他方の部品から距離の比
較的遠いワイヤボンディングパッドどうしでなされてい
る構造となっている。In one embodiment, the wire bonding pads 161 are arranged in a staggered manner as shown in FIGS. 4(a) and 4(b). In other words, when electrically connecting multiple corresponding wire bonding pads of each component by wire bonding, the distance between the wire bonding pad of one component and the wire bonding pad of the other component is relatively close. The wire bonding is arranged so that the wire bonding appears on every other connecting terminal of this component, and the wire bonding is done between the connecting terminals that are relatively close to each other and between the connecting terminals that are relatively far away from the other component. The structure is made up of wire bonding pads that are far apart.
次に、第1図(a)、 (b)をさらに改良したワイヤ
ボンディングパッド装置の他の実施例を第2図(a)。Next, FIG. 2(a) shows another embodiment of the wire bonding pad device which is a further improvement on FIGS. 1(a) and 1(b).
(b)にしたがって説明する。This will be explained according to (b).
第2図(a)、 (b)において、感熱記録用ヘッドの
発熱抵抗体に接続された導線16の先端にはワイヤボン
ディングパッド161が形成される。 このワイングパ
ッド161の位置を同一線上に配置したいわゆる千鳥状
に配設される。ワイヤボンディングパッド161に隣接
する導線16部は他の導線16部より幅狭に形成される
。而して、幅狭の導線16部に隣接するポンディングパ
ッド161部(図中斑点状部)は導線16の高さより例
えば10ミクロン程度高くなるように例えば部分メツキ
等が施されている。171はボンディングワイヤ17の
ボンディング部である。In FIGS. 2(a) and 2(b), a wire bonding pad 161 is formed at the tip of the conductive wire 16 connected to the heating resistor of the thermal recording head. The winding pads 161 are arranged on the same line in a so-called staggered manner. A portion of the conducting wire 16 adjacent to the wire bonding pad 161 is formed narrower than other portions of the conducting wire 16. The portion of the bonding pad 161 (spotted portion in the figure) adjacent to the narrow conducting wire 16 is partially plated, for example, so that it is higher than the height of the conducting wire 16 by, for example, about 10 microns. 171 is a bonding portion of the bonding wire 17.
このようにワイヤボンディングパッド161の高さを隣
接する導線16の高さより高く形成することにより、ボ
ンディングワイヤ17の径、ワイヤボンディングパッド
161の幅を変えることなく、 パッドピッチを詰める
ことができ高密度化を図ることができる。例えば、ワイ
ヤボンディングパッド161の高さを導NlAl6の高
さより10ミクロン程度高くすることにより、ワイヤボ
ンディングパッド161のピッチPを0.09m■にす
葛ことができ、ボンディングマシン精度を±40ミクロ
ンまで吸収できる。 この場合、ワイヤボンディングパ
ッド161の幅は0.14+am、 ワイヤボンディン
グパッド161と幅狭の導線16部との間隔Bは0.0
25mm、幅狭の導線16部の幅Cは0.04mm、幅
広の導線16部の幅りは0.07mmである。By forming the height of the wire bonding pad 161 higher than the height of the adjacent conductive wire 16 in this way, the pad pitch can be reduced without changing the diameter of the bonding wire 17 or the width of the wire bonding pad 161, resulting in high density. It is possible to aim for For example, by making the height of the wire bonding pad 161 about 10 microns higher than the height of the conductive NlAl6, the pitch P of the wire bonding pad 161 can be reduced to 0.09 m, and the bonding machine accuracy can be increased to ±40 microns. It can be absorbed. In this case, the width of the wire bonding pad 161 is 0.14+am, and the distance B between the wire bonding pad 161 and the narrow conducting wire 16 is 0.0
The width C of the 16 parts of the narrow conducting wire is 0.04 mm, and the width of the 16 parts of the wide conducting wire is 0.07 mm.
したがって、第2図(a) 、 (b)に示すワイヤボ
ンディングパッド装置は、第1図(a) 、 (b)に
示すワイヤボンディングパッド装置よりもそのワイヤボ
ンディングパッドの配置を高密度化することができる。Therefore, the wire bonding pad device shown in FIGS. 2(a) and (b) has wire bonding pads arranged more densely than the wire bonding pad device shown in FIGS. 1(a) and (b). Can be done.
本発明のワイヤボンディングパッド装置は、上述の構成
をとることにより、ポンディングパッドのピッチを小さ
くすることができ、高密度化を行うことができる。By adopting the above-described configuration, the wire bonding pad device of the present invention can reduce the pitch of the bonding pads and achieve high density.
特に、ファクシミリの感熱記録用ヘッド等に用いて好適
する。It is particularly suitable for use in facsimile heat-sensitive recording heads and the like.
第1図(a)は本発明のワイヤボンディングパッド装置
の一実施例を示す平面図、第1図(b)は第1図(a)
の3B −3B線断面図、第2図(a)は本発明の他の
実施例を示す平面図、第2図(b)は第2図(a)の4
8−4B線断面図、第3図は従来の感熱記録用ヘッドを
示す回路図、第4図(a)、(b)は従来の感熱記録用
ヘッドのダイオードアレイと導線とのワイヤボンディン
グ部を示す平面図及び側面図である。
11・・・発熱抵抗体、 12・・・ダイオードア
レイ。
121・・・ダイオード、16・・・導線、161・・
・ワイヤボンディングパッド・17・・・ボンディング
ワイヤ、
171・・・ポンディングパッド部。
代理人 弁理士 則 近 憲 佑
同 竹 花 喜久男
(a)
(a)
(b)
第2図
第1図FIG. 1(a) is a plan view showing an embodiment of the wire bonding pad device of the present invention, and FIG. 1(b) is a plan view showing an embodiment of the wire bonding pad device of the present invention.
FIG. 2(a) is a plan view showing another embodiment of the present invention, and FIG. 2(b) is a sectional view taken along line 3B-3B of FIG. 2(a).
8-4B line sectional view, FIG. 3 is a circuit diagram showing a conventional thermal recording head, and FIGS. 4(a) and (b) show a wire bonding portion between a diode array and a conducting wire of a conventional thermal recording head. FIG. 2 is a plan view and a side view. 11... Heat generating resistor, 12... Diode array. 121...Diode, 16...Conductor, 161...
- Wire bonding pad - 17... Bonding wire, 171... Bonding pad part. Agent Patent attorney Noriyuki Chika Yudo Kikuo Takehana (a) (a) (b) Figure 2 Figure 1
Claims (2)
部品のワイヤボンディングパッドとの距離の比較的近い
ものと比較的遠いものとがこの部品のワイヤボンディン
グパッド1つおきに現われる様な配置とされており、 且つ他方の部品から距離の比較的近いワイヤボンディン
グパッドどうし及び他方の部品から距離の比較的遠いワ
イヤボンディングパッドどうしを電気的に接続するボン
ディングワイヤを備え、複数のワイヤボンディングパッ
ドを一列状に配置した第1のワイヤボンディングパッド
列と、この第1のワイヤボンディングパッド列を構成す
るワイヤボンディングパッドに電気的に接続する導線か
らなる第1の導線群と、 この第1の導線群を構成する導線間に配された複数のワ
イヤボンディングパッドを一列状に配置した第2のワイ
ヤボンディングパッド列と、この第2のワイヤボンディ
ングパッド列を構成するワイヤボンディングパッドに電
気的に接続する導線からなる第2の導線群とを具備し、 前記第2のワイヤボンディングパッド列を構成するワイ
ヤボンディングパッドに対向する部分の前記第1の導線
群を構成する導線の幅は、前記第1の導線群を構成する
他の部分の導線の幅よりも狭く、且つ前記第1の導線群
を構成する他の部分の導線の幅と前記第2の導線群を構
成する導線の幅とが実質的に等しいことを特徴とするワ
イヤボンディングパッド装置。(1) The wire bonding pads of one component and the wire bonding pads of the other component are arranged so that the wire bonding pads of the other component are relatively close to each other and those that are relatively far apart appear at every other wire bonding pad of this component. and a bonding wire that electrically connects wire bonding pads that are relatively close to each other and wire bonding pads that are relatively far from the other component, and a plurality of wire bonding pads are arranged in a line. a first wire bonding pad row arranged; a first conductor group consisting of conductor wires electrically connected to the wire bonding pads constituting the first wire bonding pad row; A second wire bonding pad row in which a plurality of wire bonding pads arranged between conductive wires are arranged in a line, and a second wire bonding pad row consisting of conductive wires electrically connected to the wire bonding pads constituting the second wire bonding pad row. 2 conductive wire groups, and the width of the conductive wires constituting the first conductive wire group in the portion facing the wire bonding pads constituting the second wire bonding pad row is equal to the width of the conductive wires constituting the first conductive wire group. The width of the conductor wire in the other portion constituting the first conductor group is substantially equal to the width of the conductor wire constituting the second conductor group. Characteristic wire bonding pad device.
るワイヤボンディングパッドは、前記第2の導線群を構
成する導線より高く形成することを特徴とする特許請求
の範囲第1項記載のワイヤボンディングパッド装置。(2) The wire bonding pad according to claim 1, wherein the wire bonding pads constituting the second wire bonding pad row are formed higher than the conductors constituting the second conductor group. Device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1144105A JPH0242737A (en) | 1989-06-08 | 1989-06-08 | Wire bonding pad device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1144105A JPH0242737A (en) | 1989-06-08 | 1989-06-08 | Wire bonding pad device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56084594A Division JPS57199228A (en) | 1981-06-02 | 1981-06-02 | Wire bonding pad device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0242737A true JPH0242737A (en) | 1990-02-13 |
Family
ID=15354303
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1144105A Pending JPH0242737A (en) | 1989-06-08 | 1989-06-08 | Wire bonding pad device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0242737A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1049363A2 (en) * | 1999-04-30 | 2000-11-02 | Fujitsu Limited | Printed circuit board |
EP1545170A1 (en) * | 2003-12-16 | 2005-06-22 | Nitto Denko Corporation | Wiring circuit board |
US7399061B2 (en) | 2004-09-24 | 2008-07-15 | Seiko Epson Corporation | Bonding structure, actuator device and liquid-jet head |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5277744A (en) * | 1975-12-24 | 1977-06-30 | Seiko Epson Corp | Liqud crystal display device |
JPS57199228A (en) * | 1981-06-02 | 1982-12-07 | Toshiba Corp | Wire bonding pad device |
-
1989
- 1989-06-08 JP JP1144105A patent/JPH0242737A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5277744A (en) * | 1975-12-24 | 1977-06-30 | Seiko Epson Corp | Liqud crystal display device |
JPS57199228A (en) * | 1981-06-02 | 1982-12-07 | Toshiba Corp | Wire bonding pad device |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1049363A2 (en) * | 1999-04-30 | 2000-11-02 | Fujitsu Limited | Printed circuit board |
EP1049363A3 (en) * | 1999-04-30 | 2002-05-02 | Fujitsu Limited | Printed circuit board |
EP1545170A1 (en) * | 2003-12-16 | 2005-06-22 | Nitto Denko Corporation | Wiring circuit board |
US7087844B2 (en) | 2003-12-16 | 2006-08-08 | Nitto Denko Corporation | Wiring circuit board |
US7399061B2 (en) | 2004-09-24 | 2008-07-15 | Seiko Epson Corporation | Bonding structure, actuator device and liquid-jet head |
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