JPH0241894B2 - - Google Patents
Info
- Publication number
- JPH0241894B2 JPH0241894B2 JP59008757A JP875784A JPH0241894B2 JP H0241894 B2 JPH0241894 B2 JP H0241894B2 JP 59008757 A JP59008757 A JP 59008757A JP 875784 A JP875784 A JP 875784A JP H0241894 B2 JPH0241894 B2 JP H0241894B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- resist
- coating
- forming
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/165—Monolayers, e.g. Langmuir-Blodgett
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は任意の基板上へ有機薄膜を塗布形成す
る際の方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for coating and forming an organic thin film on an arbitrary substrate.
さらに詳しくは、集積回路素子等（以下、IC
という）を製造する場合に用いられている感光性
樹脂（以下、光、熱、電子線、Ｘ線、陽イオン等
により重合する有機物質を含めてレジストとい
う）の塗膜形成方法に関するものである。 For more details, please refer to the integrated circuit elements (hereinafter referred to as IC).
This article relates to a coating film forming method for photosensitive resins (hereinafter referred to as resists, including organic substances that are polymerized by light, heat, electron beams, X-rays, cations, etc.) used in the production of photosensitive resins. .
従来例の構成とその問題点
従来より、IC製造時のレジストの塗布はスピ
ナーを用いた回転塗布法が用いられてきたが、近
年VLSI製造用として微細加工の必要からより薄
く、しかもピンホールのない塗膜の形成が要望さ
れている。ところが、一般に回転塗布法を用いて
ホトレジストを塗布する場合、薄く塗布するため
には、スピナーをより高速で回転させるか、レジ
ストの粘度を低くする必要がある。Conventional structure and problems Traditionally, a spin coating method using a spinner has been used to apply resist during IC manufacturing, but in recent years, due to the need for microfabrication for VLSI manufacturing, resists have been thinner and have fewer pinholes. There is a demand for the formation of a coating film that does not However, when applying photoresist using a spin coating method, it is generally necessary to rotate a spinner at a higher speed or lower the viscosity of the resist in order to apply a thin layer.
ところが、基板とレジストの濡れ性が悪かつた
り基板上に段差あるいはゴミ等の異物が付着して
いると、上述の方法で薄膜を形成した場合塗布む
らやピンホールが発生しやすくなる欠点があつ
た。 However, if the wettability of the substrate and resist is poor, or if there are steps or foreign matter such as dust attached to the substrate, forming a thin film using the above method has the drawback that uneven coating and pinholes are likely to occur. Ta.
一方、レジストの塗膜と基板の密着性を向上さ
せる方法として、シランカツプリング剤等をコー
トする方法も採用されているが、非常に薄く塗る
必要があるため塗布むらが生じやすかつた。 On the other hand, as a method to improve the adhesion between the resist coating and the substrate, a method of coating with a silane coupling agent, etc. has also been adopted, but since it needs to be applied very thinly, uneven coating tends to occur.
さらにまた、ピンホールのない薄膜形成方法と
して、ラングミユアーブロジエツト法（以下LB
法）を用いた非常に薄いホトレジスト膜の形成方
法も開発されつつあるが、この方法では１層のコ
ート厚さが20〜30Å程度であるため、通常のプラ
ズマエツチングに耐えるためには100層程度形成
する必要があり量産性に問題があつた。 Furthermore, as a pinhole-free thin film formation method, the Langmuir Blosget method (hereinafter referred to as LB) has been proposed.
A method of forming a very thin photoresist film using the method (method) is also being developed, but since the coating thickness of one layer is about 20 to 30 Å in this method, it takes about 100 layers to withstand normal plasma etching. There was a problem with mass production because it required forming.
発明の目的
本発明は、任意の基板上へ有機薄膜を形成する
際、基板との密着性が良く塗布むらやピンホール
の発生が非常に少ない塗膜形成方法を提供するも
のである。さらに詳しくは、IC製造工程におい
て、レジストの濡れ性を良くし、段差や異物の付
着があつた場合にでも、ピンホールの発生を抑制
できる塗膜の形成方法を提供するものである。ま
た、基板とレジストの密着性を改良するものであ
る。OBJECTS OF THE INVENTION The present invention provides a method for forming a coating film that has good adhesion to the substrate and very little occurrence of uneven coating or pinholes when forming an organic thin film on any substrate. More specifically, the present invention provides a method for forming a coating film that improves the wettability of the resist during the IC manufacturing process and can suppress the generation of pinholes even when there is a step or foreign matter attached. It also improves the adhesion between the substrate and the resist.
発明の構成
以上述べてきた従来法の欠点に鑑み、本発明
は、あらかじめ基板上に、熱、光、電子線、Ｘ
線、陽イオン等のエネルギーにて重合するモノマ
ーを用いて少なくとも１層以上のLB法による有
機薄膜（以下LB膜という）を形成し、このLB膜
を重合処理した後、LB膜を介してレジストを塗
布することを特徴とする。Structure of the Invention In view of the drawbacks of the conventional methods described above, the present invention provides a method for applying heat, light, electron beams,
At least one layer of organic thin film (hereinafter referred to as LB film) is formed by the LB method using a monomer that polymerizes with the energy of radiation, cations, etc. After polymerizing this LB film, resist is applied through the LB film. It is characterized by applying.
実施例の説明
例えば、第１図のように、任意の凹凸のある半
導体等の基板１上に、LB法によりLB膜２を形成
する。このときLB膜は２〜３層あれば十分であ
るが、最上層は常に塗布すべきレジストと濡れ性
の良い面を出ししおく必要がある。すなわち、塗
布すべきレジストとして有機溶剤で薄めたものを
塗布する場合には、第２図に示すように疎水基３
が表面に出るようにLB膜を形成しておく。たと
えば、基板１の表面がSiO2等の場合には、LB膜
２は１層目が親水基４がSiO2面に接触するよう
に形成し、レジストとして有機溶剤で薄めたもの
（例えばJSR等）を塗布する場合には、表面が疎
水基３となるよう１層、３層、５層等奇数層形成
しておけば良い。DESCRIPTION OF EMBODIMENTS For example, as shown in FIG. 1, an LB film 2 is formed by the LB method on a substrate 1 such as a semiconductor having arbitrary irregularities. At this time, it is sufficient to have two to three layers of the LB film, but it is necessary to always expose the top layer so that the surface with good wettability with the resist to be coated is exposed. In other words, when applying a resist diluted with an organic solvent, the hydrophobic group 3 is
The LB film is formed so that it appears on the surface. For example, when the surface of the substrate 1 is made of SiO 2 or the like, the first layer of the LB film 2 is formed so that the hydrophilic groups 4 are in contact with the SiO 2 surface, and a resist diluted with an organic solvent (such as JSR etc.) is used as the resist. ), it is sufficient to form an odd number of layers such as 1 layer, 3 layers, 5 layers, etc. so that the surface has 3 hydrophobic groups.
また、このとき、レジストの有機溶剤でコート
時にLB膜が溶けてしまうような場合には、LB膜
に用いるモノマーとして、ｗ−トリコセン酸やジ
アセチレン誘導体のような分子内部に重合性基を
有する物質を用い、レジスト膜コート前に光、
熱、電子線、Ｘ線、陽イオン等により全面LB膜
を重合させておけば、溶けるのを防止できる。さ
らにBF3、ベンゾイルパーオキサイド等の触媒を
加えて熱重合を行うこともできる。 At this time, if the LB film is dissolved during coating with the resist's organic solvent, monomers that have a polymerizable group inside the molecule such as w-tricosenic acid or diacetylene derivatives may be used as the monomer for the LB film. Using a substance, light before coating the resist film,
If the entire LB film is polymerized using heat, electron beams, X-rays, cations, etc., it can be prevented from melting. Furthermore, thermal polymerization can be carried out by adding a catalyst such as BF 3 or benzoyl peroxide.
なおLB膜は、原理的に単分子膜の積層である
ため全領域にわたり厚みは均一になる。次に、第
３図に示すようにスピナー等を用いて全面にレジ
スト５を塗布し、所定のパターンに露光、現像を
行つた後、レジスト５の開口部のLB膜を酸素プ
ラズマ等で除去してやれば、通常と同じレジスト
パターンを形成できる。 Note that since the LB film is in principle a stack of monomolecular films, the thickness is uniform over the entire area. Next, as shown in Fig. 3, a resist 5 is applied to the entire surface using a spinner or the like, and after exposure and development are performed in a predetermined pattern, the LB film in the openings of the resist 5 is removed using an oxygen plasma or the like. For example, the same resist pattern as usual can be formed.
なお、このとき、LB膜２は通常100Å程度（３
層の場合）で良いので、レジストパターンが酸素
プラズマで無くなることはない。 Note that at this time, the LB film 2 usually has a thickness of about 100 Å (3
layer), so the resist pattern will not be destroyed by oxygen plasma.
また、上記実施例は、IC製造におけるホトリ
ソ工程に用いた場合について述べたが、本発明の
技術は、任意の基板上へ有機薄膜をコートするよ
うな場合ならどのような場合にでも利用できるこ
とは明らかであろう。 Furthermore, although the above embodiments have been described for use in a photolithography process in IC manufacturing, the technology of the present invention can be used in any case where an organic thin film is coated on an arbitrary substrate. It should be obvious.
発明の効果
本発明を用いることにより、レジストと基板と
の濡れ性を均一に良くすることができるのでレジ
ストの塗膜を薄くしても塗布むらが少なく塗膜ピ
ンホールを大幅に減少できる。また、有機溶剤系
のレジストでも、LB膜を介して塗布されるため、
基板が親水性であつても密着性は非常に良い。従
つて、VLSI製造において、微細パターンの形成
が容易となり、ピンホールの発生も少いため歩留
が向上するので産業上の効果大なるものである。Effects of the Invention By using the present invention, the wettability between the resist and the substrate can be uniformly improved, so even if the resist coating is made thinner, there is little coating unevenness and coating film pinholes can be significantly reduced. In addition, even organic solvent-based resists are applied through the LB film, so
Adhesion is very good even if the substrate is hydrophilic. Therefore, in VLSI manufacturing, it is easier to form fine patterns, fewer pinholes occur, and yields are improved, which has great industrial effects.
第１図は本発明の一実施例における塗膜形成方
法のLB膜形成後の断面図、第２図は第１図のＡ
部の拡大断面図で、LB親水基４と炭素鎖等の疎
水基３の並び方を示す図、第３図は前記LB膜上
へレジストを塗布形成し、所定の露光により現像
パターン形成した後、O2プラズマにより開口部
のLB膜を除去した断面図である。
１……基板、２……LB膜、５……ホトレジス
ト。
Figure 1 is a cross-sectional view after forming the LB film in the coating film forming method according to one embodiment of the present invention, and Figure 2 is A of Figure 1.
FIG. 3 is an enlarged cross-sectional view of the section showing how the LB hydrophilic groups 4 and the hydrophobic groups 3 such as carbon chains are arranged. FIG. 3 is a cross-sectional view in which the LB film at the opening is removed by O 2 plasma. 1...Substrate, 2...LB film, 5...Photoresist.
Claims (1)
イオン等のエネルギーにて重合するモノマーを用
いてラングミユアブロジエツト膜を形成する工程
と、前記ラングミユアブロジエツト膜を重合する
工程と、この重合されたラングミユアブロジエツ
ト膜を介して有機物質を塗布する工程を含むこと
を特徴とする塗膜形成方法。 ２ 有機物質がレジストであることを特徴とする
特許請求の範囲第１項記載の塗膜形成方法。[Scope of Claims] 1. A step of forming a Langmeur Blossom film on any substrate using a monomer that polymerizes with energy such as heat, light, electron beams, X-rays, cations, etc.; A method for forming a coating film, comprising the steps of polymerizing a Langmeur Blossom film and applying an organic substance through the polymerized Langmeow Blossom film. 2. The coating film forming method according to claim 1, wherein the organic substance is a resist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59008757A JPS60153124A (en) | 1984-01-20 | 1984-01-20 | Formation of coating film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59008757A JPS60153124A (en) | 1984-01-20 | 1984-01-20 | Formation of coating film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60153124A JPS60153124A (en) | 1985-08-12 |
| JPH0241894B2 true JPH0241894B2 (en) | 1990-09-19 |
Family
ID=11701796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59008757A Granted JPS60153124A (en) | 1984-01-20 | 1984-01-20 | Formation of coating film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60153124A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0647093B2 (en) * | 1986-08-01 | 1994-06-22 | 株式会社リコー | Method for producing semiconductive or conductive thin film |
| JPH0653249B2 (en) * | 1987-01-28 | 1994-07-20 | 松下電器産業株式会社 | Surface oxidation prevention method |
| JPH0667981B2 (en) * | 1988-04-28 | 1994-08-31 | 松下電器産業株式会社 | Method for producing polyacetylene or polyacene type ultralong conjugated polymer |
| JP2667250B2 (en) * | 1989-06-15 | 1997-10-27 | 松下電子工業株式会社 | Method for manufacturing semiconductor device |
-
1984
- 1984-01-20 JP JP59008757A patent/JPS60153124A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60153124A (en) | 1985-08-12 |
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