JPH04338630A - Method for manufacture of semiconductor device - Google Patents

Method for manufacture of semiconductor device

Info

Publication number
JPH04338630A
JPH04338630A JP14146291A JP14146291A JPH04338630A JP H04338630 A JPH04338630 A JP H04338630A JP 14146291 A JP14146291 A JP 14146291A JP 14146291 A JP14146291 A JP 14146291A JP H04338630 A JPH04338630 A JP H04338630A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
formed
process
method
resin layer
patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14146291A
Inventor
Shoji Suzuki
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To obtain a process with an enhanced machining precision of patterns by a RIE in a method for forming a fine pattern using a process with a multilayer resist structure.
CONSTITUTION: Three layers are formed on a substrate. The intermediate film 11 is comparative thick and is formed of a silicon ladder polymer of a high molecular weight between the bottom thick organic resin layer 10 and the top photosensitive resin layer 12. Using this multilayer, a fine pattern is formed. The film thickness of the intermediate silicon ladder polymer layer can be made large and has the same RIE resistance as that of a siloxane polymer and a good thickness uniformity. Thus, fine patterns can be formed with a higher processing precision.
COPYRIGHT: (C)1992,JPO&Japio
JP14146291A 1991-05-15 1991-05-15 Method for manufacture of semiconductor device Pending JPH04338630A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14146291A JPH04338630A (en) 1991-05-15 1991-05-15 Method for manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14146291A JPH04338630A (en) 1991-05-15 1991-05-15 Method for manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH04338630A true true JPH04338630A (en) 1992-11-25

Family

ID=15292449

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14146291A Pending JPH04338630A (en) 1991-05-15 1991-05-15 Method for manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH04338630A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998032162A1 (en) * 1997-01-21 1998-07-23 Matsushita Electric Industrial Co., Ltd. Pattern forming method
JP2002252222A (en) * 2001-02-22 2002-09-06 Nec Corp Method for manufacturing semiconductor device, and the semiconductor device
US7914975B2 (en) 2007-04-10 2011-03-29 International Business Machines Corporation Multiple exposure lithography method incorporating intermediate layer patterning

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998032162A1 (en) * 1997-01-21 1998-07-23 Matsushita Electric Industrial Co., Ltd. Pattern forming method
JP2002252222A (en) * 2001-02-22 2002-09-06 Nec Corp Method for manufacturing semiconductor device, and the semiconductor device
US7914975B2 (en) 2007-04-10 2011-03-29 International Business Machines Corporation Multiple exposure lithography method incorporating intermediate layer patterning

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