Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filedfiledCritical
Priority to JP9467981ApriorityCriticalpatent/JPS57208442A/ja
Publication of JPS57208442ApublicationCriticalpatent/JPS57208442A/ja
Publication of JPH0241702B2publicationCriticalpatent/JPH0241702B2/ja
Method for producing SnO2 gate ion sensitive field effect transistor (ISFET), and method and device for measuring the temperature parameters, drift and hysteresis values thereof