JPH0241169Y2 - - Google Patents

Info

Publication number
JPH0241169Y2
JPH0241169Y2 JP7272583U JP7272583U JPH0241169Y2 JP H0241169 Y2 JPH0241169 Y2 JP H0241169Y2 JP 7272583 U JP7272583 U JP 7272583U JP 7272583 U JP7272583 U JP 7272583U JP H0241169 Y2 JPH0241169 Y2 JP H0241169Y2
Authority
JP
Japan
Prior art keywords
frequency power
high frequency
power source
electrode
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7272583U
Other languages
English (en)
Japanese (ja)
Other versions
JPS59178899U (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7272583U priority Critical patent/JPS59178899U/ja
Publication of JPS59178899U publication Critical patent/JPS59178899U/ja
Application granted granted Critical
Publication of JPH0241169Y2 publication Critical patent/JPH0241169Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
JP7272583U 1983-05-16 1983-05-16 プラズマ発生装置 Granted JPS59178899U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7272583U JPS59178899U (ja) 1983-05-16 1983-05-16 プラズマ発生装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7272583U JPS59178899U (ja) 1983-05-16 1983-05-16 プラズマ発生装置

Publications (2)

Publication Number Publication Date
JPS59178899U JPS59178899U (ja) 1984-11-29
JPH0241169Y2 true JPH0241169Y2 (enrdf_load_html_response) 1990-11-01

Family

ID=30202859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7272583U Granted JPS59178899U (ja) 1983-05-16 1983-05-16 プラズマ発生装置

Country Status (1)

Country Link
JP (1) JPS59178899U (enrdf_load_html_response)

Also Published As

Publication number Publication date
JPS59178899U (ja) 1984-11-29

Similar Documents

Publication Publication Date Title
JP5541677B2 (ja) 真空処理装置、バイアス電源および真空処理装置の操作方法
KR100397137B1 (ko) 이온 도금 장치 및 이온 도금 방법
TW466618B (en) Plasma processing method and apparatus for eliminating damages in a plasma process of a substrate
JP4679004B2 (ja) アーク蒸発源装置、その駆動方法、及びイオンプレーティング装置
JP3224443B2 (ja) ヘリコン波プラズマ処理装置
JP3706027B2 (ja) プラズマ処理方法
JPS6393881A (ja) プラズマ処理装置
JPS6130665A (ja) スパツタ装置
ES2134538T3 (es) Dispositivo para el recubrimiento de sustratos al vacio.
US5662741A (en) Process for the ionization of thermally generated material vapors and a device for conducting the process
JPH05222531A (ja) 基板の被覆方法および被覆装置
JPH0241169Y2 (enrdf_load_html_response)
US7316764B2 (en) System and method for performing sputter etching using independent ion and electron sources and a substrate biased with an a-symmetric bi-polar DC pulse signal
JPH04174514A (ja) プラズマ処理装置
JPH0241168Y2 (enrdf_load_html_response)
JPH06119997A (ja) 高周波発生装置
JP2014157719A (ja) プラズマ発生装置及びプラズマ発生装置の制御方法
JPS6135561Y2 (enrdf_load_html_response)
JPH0766918B2 (ja) プラズマ処理装置
JP3038828B2 (ja) プラズマ処理方法
Dudin et al. Ion energy cost in a combined inductive-capacitive rf discharge
US4419380A (en) Method for ion-aided coating on electrically insulating substrates
JPH0211781A (ja) ドライエッチング装置
JPS61231172A (ja) スパツタ方法及び装置
JPS62247069A (ja) イオンプレ−テイング装置