JPH0239556A - Semiconductor device - Google Patents

Abstract

PURPOSE:To radiate heat from both surfaces of a planar semiconductor element and to improve heat radiating efficiency by bonding a first electrode connecting plate and one electrode of the planar semiconductor element to a radiating fin in a housing part of the planar semiconductor element, bringing a second electrode connecting plate that is bonded to another electrode to the radiating fin, and welding the plates with pressure by using a compressing device. CONSTITUTION:A recess part 1A is formed as a housing part of a planar semiconductor element at the central part of a radiating fin 1. The planar semiconductor element 2 which is housed in the housing part is bonded to the bottom surface of the housing part through one end 3A of a first electrode connecting plate 3 and an insulating material 4 having excellent heat conductivity. The depth of the housing part 1A is set so that another electrode 2B of the planar semiconductor element is slightly protruding from the housing to when the planar semiconductor element 2 is housed. A central part 5C at the horizontal part of an L shaped second electrode connecting plate 5 is bonded to the other electrode of the planar semiconductor element. both ends 5D and 5E of the horizontal part are bonded to radiating fins 1B and 1C at the periphery of the housing part through insulating materials 14 and 15 having excellent heat conductivity. In this constitution, heat generated in the planar semiconductor element can be transferred to the radiating fins through both ends. Thus the heat radiating efficiency can be enhanced.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to improvements in the heat dissipation structure of semiconductor devices, particularly semiconductor devices using flat semiconductor elements.

[Conventional technology]

FIG. 2 shows the configuration of a conventional semiconductor device using a flat semiconductor element.

In this figure, (1) is a radiation fin, (21 is a flat semiconductor element, (31 is a first electrode connection plate, one end (38) of which is joined to one electrode of the flat semiconductor element (2), The other end (3B) extends outward. (4) is an insulating material interposed between the first electrode connection plate and the radiation fin (1), and the first electrode connection plate ( 3) and the heat radiation fin (1), and the temperature of the flat semiconductor element (21) is reduced by transmitting the heat generated by the flat semiconductor element (21) to the heat radiation fin (1) and dissipating the heat to the outside air. It is made of ceramic, etc. with good thermal conductivity in order to suppress the increase in heat.The opening is a second electrical connection plate, and one end (5Δ) of the plate is connected to the other electrode of the flat semiconductor element (■). , the other end (5B
) extend outward. (6) is an insulating material disposed on the top surface of one end (5A) of the second electrode connection plate; (7) and (8)
is a bolt installed in the heat dissipation fin (1), (9) is a holding plate fitted to both bolts, and α0) is a bolt inserted between the holding plate (9) and the insulating material (6). Both ends of the plate spring are slidably engaged with the bolts (7) ts+ and held in a curved state.

(II) (121 is a nut screwed into each of the above-mentioned Poldro (8), and by tightening these, the leaf spring 0
[through the second electrode connection plate (9, flat semiconductor element (2)
J and the first electrode connection plate (3) are pressed against the heat radiation fin (1). (13) is a case that accommodates each of the above components.

[Problem to be solved by the invention]

The conventional semiconductor device is constructed as described above, and the flat semiconductor element (■
The heat generated when electricity is applied is radiated from the heat dissipation fin (1) via the insulating material (4), but because the heat dissipation fin (1) is bonded to only one side of the flat semiconductor element (a), the heat dissipation efficiency is low. Therefore, there was a problem in that the flat semiconductor element (2) could not be sufficiently energized.

The present invention was made to solve these problems, and aims to provide a semiconductor device that enables heat radiation from both sides of a flat semiconductor element and improves heat radiation efficiency.

[Means to solve the problem]

In the semiconductor device according to the present invention, a accommodating portion for the flat semiconductor element is formed in the radiation fin, and in the accommodating portion, one side of the flat semiconductor element is inserted through the first electrode connection plate and an insulating material with good thermal conductivity. In addition to joining the electrode to the heat dissipation fin,
A second electrode connection plate to be bonded to the other electrode of the flat semiconductor element is brought into contact with the heat radiation fin through an insulating material with good thermal conductivity, and the second electrode connection plate is pressed between the flat semiconductor element and the radiation fin by a pressing device. It is designed to press into contact with the

[(for ya)]

According to this invention, the heat generated when the flat semiconductor element is energized is transferred from one positive surface of the flat semiconductor element to the first electrode connection plate and the insulating material bonded to the heat radiation fin. The radiation is also transmitted from the other TL electrode surface of the flat semiconductor element to the radiation fins via the second electrode connecting plate and the insulating material bonded thereto, so that the radiation is transmitted from both sides of the flat semiconductor element to Heat is transferred to the heat radiation fins, and the heat radiation efficiency is significantly improved.

[Embodiments of the invention]

An embodiment of the present invention will be described below with reference to FIG.

In this figure, (1) is a heat dissipation fin, and a recess (IA) is formed in the center thereof as a housing portion for housing a flat semiconductor element. (Denoted at 21 is a flat semiconductor element housed in this accommodation section, which is bonded to the bottom surface of the accommodation section via one end (3A) of the first electrode connection plate (3) and an insulating material (4) with good thermal conductivity. ing.

In addition, the depth of the accommodating part (18) is as described above! When the flat semiconductor element (21) is housed in the TJ, the other electrode surface (2B) of the flat semiconductor element is set so as to slightly protrude from the housing part (IA), as shown in FIG.

((5) is the second electrode connection plate bent into an L shape, the center part (5C) of the horizontal part is joined to the other electrode of the flat semiconductor element, and both ends of the horizontal part (5D) <5E) are connected to the radiation fins (IB) (Ic) on the periphery of the housing portion, respectively, via insulating materials (14) (Is) having good thermal conductivity.

The rest of the configuration is the same as that of the conventional device, so a description thereof will be omitted.

This embodiment is constructed as described above, and has a flat semiconductor element (
A is accommodated in the housing part (18) of the heat dissipation fin (1), and one electrode is connected to the first electrode connection plate (3) and the insulating material (4).
The other electrode is connected to the heat dissipation fin on the bottom of the housing part through the second electrode connection plate (51 and the insulating material (+4)
Since it is connected to the heat dissipation fins on the periphery of the housing part through the (+5), it is possible to transmit the heat generated by the flat semiconductor element to the heat dissipation fins from both sides of the element, thereby improving heat dissipation efficiency.

Note that in the above embodiments, the heat dissipation fins have a large number of folds and have a heat dissipation effect by themselves.
A similar effect can be expected even if a simple plate-shaped heat dissipation fin without folds is used and this is attached to another heat dissipation fin.

〔Effect of the invention〕

As described above, according to the present invention, a flat semiconductor element is housed in a housing part provided in a radiation fin, one electrode of the flat semiconductor element is joined to the radiation fin inside the housing part via an insulating material, and the other electrode is joined to the radiation fin in the housing part through an insulating material. The second TLri1 connection plate, which is bonded to the electrode of This can significantly improve efficiency.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram showing an embodiment of the present invention, and FIG. 2 is a schematic diagram showing a conventional semiconductor device. In the figure, (1) is a heat dissipation fin, (21 is a flat semiconductor element, (3) ((5) is the first and second ': Material, (71 (8
1 is Pol 1 ~, C0) is a leaf spring, (9) is a holding plate, C
11) (+2) is the oak 1~, (IA) is the storage part. In addition, in the figures, the same reference numerals indicate corresponding parts. Agent Patent Attorney Masuo Oiwa Figure 1 4.6. /4,1. f: ξC ball holding weight A: Rito Chobe

Claims (1)

[Claims] A flat semiconductor element, a radiation fin having a housing portion for accommodating the flat semiconductor element, an insulating material interposed between the radiation fin and the semiconductor element to insulate the two, and one of the insulating material and the flat semiconductor element. a first electrode connection plate interposed between the electrode of the flat semiconductor element, a second electrode connection plate that abuts the other electrode of the flat semiconductor element and abuts the heat dissipation fin via an insulating material; A semiconductor device comprising a pressing device for pressing an electrode connection plate onto the flat semiconductor element and the heat radiation fin.