JPH0238849A - Inspection of inside of resin - Google Patents
Inspection of inside of resinInfo
- Publication number
- JPH0238849A JPH0238849A JP18928088A JP18928088A JPH0238849A JP H0238849 A JPH0238849 A JP H0238849A JP 18928088 A JP18928088 A JP 18928088A JP 18928088 A JP18928088 A JP 18928088A JP H0238849 A JPH0238849 A JP H0238849A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- section
- cracking
- fluorescence microscope
- oxidized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920005989 resin Polymers 0.000 title claims abstract description 50
- 239000011347 resin Substances 0.000 title claims abstract description 50
- 238000007689 inspection Methods 0.000 title claims description 5
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000004458 analytical method Methods 0.000 claims abstract description 5
- 238000005498 polishing Methods 0.000 claims description 7
- 230000007547 defect Effects 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 230000005284 excitation Effects 0.000 abstract description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052753 mercury Inorganic materials 0.000 abstract description 2
- 238000005336 cracking Methods 0.000 abstract 4
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 230000007812 deficiency Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 239000012857 radioactive material Substances 0.000 description 2
- 238000002601 radiography Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
Landscapes
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
庄１」］ｌ引且分ｌ−
この発明は樹脂封止した半導体装置等の樹脂クラックや
樹脂とリードフレームの密着性などを解析する樹脂内部
検査方法に関する。DETAILED DESCRIPTION OF THE INVENTION This invention relates to a resin internal inspection method for analyzing resin cracks in a resin-sealed semiconductor device, adhesion between the resin and a lead frame, and the like.
従】Ｊ口支術−
ＩＣやＬＳＩ等の樹脂モールド手導体装置の樹脂内部を
検査するには、従来より、発生した樹脂クラックを調べ
るために、予め第５図のように透明なエポキシ等のゾル
状の埋込み用樹脂１中に半導体装置２を埋込んで硬化さ
せておき第６図のように、クラック３が発生した部分ま
で研磨機で断面研磨する。ここで、問題なのは、樹脂埋
めして断面研磨可能なまで硬化させる蜜でに相当長い時
間が必要であり、またクラック部分まで研磨するさいに
、クラック幅つまりギャップ長が小さい場合は、観測し
たい部分を露出させるのが非常に難しいことである。こ
のような理由により、正確なりラックの深さすなわちク
ラックの奥行くを求めることが難しかった。[Complete] J Oral Technique - When inspecting the resin interior of a resin-molded hand conductor device such as an IC or LSI, it is conventional to use transparent epoxy or the like as shown in Figure 5 in order to check for resin cracks that have occurred. The semiconductor device 2 is embedded in a sol-like embedding resin 1 and cured, and its cross section is polished using a polishing machine up to the portion where a crack 3 has occurred, as shown in FIG. The problem here is that it takes a considerable amount of time to fill the resin and harden it until cross-section polishing is possible, and when polishing to the cracked part, if the crack width, that is, the gap length, is small, the part you want to observe It is very difficult to expose the For these reasons, it has been difficult to accurately determine the depth of the rack, that is, the depth of the crack.
また、樹脂とリードフレームの密着性においては、どの
程度の間隙がおいているかを確認する方法としては、蛍
光液を半導体装置等のワークに浸透させ、その浸透度合
いを確認する蛍光含浸法、また、赤インクを製品に浸透
させ、その浸透度合を確認するレッドチエツク法、また
、放射性物質浸透させ、その浸透度合を確認するラジオ
グラフイー法など、さまざまな方法があるが、どの方法
に於いても、簡単に安全に短時間で間隙を確認する技術
は確立されていない。Regarding the adhesion between the resin and the lead frame, methods to check the gap between the resin and the lead frame include the fluorescent impregnation method, in which a fluorescent liquid is permeated into a work such as a semiconductor device, and the degree of permeation is checked. There are various methods such as red check method, which permeates red ink into the product and checks the degree of permeation, and radiography method, which permeates radioactive material and checks the degree of permeation. However, no technology has been established to easily and safely check the gap in a short time.
このような理由により、樹脂モールド不良を解析するに
は不十分であった。For these reasons, it was insufficient to analyze resin mold defects.
従来技術で述べた樹脂クラック検査のための樹脂に埋め
込み、研磨する方法では、樹脂環めして断面を研磨する
という前処理を行なわなければいけないため、クラック
環さなどを確認するのに時間がかかっていた。また、小
さいギヤ、プ長のクラックについては、見たい所で断面
研磨を止めるのが非常に難しかった。The method of embedding in resin and polishing for resin crack inspection described in the prior art requires pretreatment of enclosing in resin and polishing the cross section, which takes time to check the size of cracks. was. Also, when it came to cracks on small gears and lengths, it was very difficult to stop polishing the cross section at the desired point.
Ｉ−”Ｈ
本発明の上記課題を解決する技術的手段は、モールド樹
脂であるエポキシ樹脂が酸化されると、蛍光発色を示す
という現象を利用して、クラック部分や密着性が悪い部
分を蛍光発色させ、その蛍光発色部分を、蛍光顕微鏡を
用いて確認するものである。I-"H The technical means of solving the above-mentioned problems of the present invention utilizes the phenomenon that when the epoxy resin that is the molding resin is oxidized, it exhibits fluorescent color. The method involves developing a color and confirming the fluorescent portion using a fluorescence microscope.
作Ｊ１
一般に半導体装置の耐湿性試験などに於いては、雰囲気
中の水分が樹脂とリードフレームの界面（間隙）から侵
入し、ボンディングワイヤを伝ってベレットに到達して
アルミ腐食を起こす。この場合本発明では、水分がどこ
まで侵入しているかを、酸化された樹脂断面の蛍光発色
度合を確認することによって、どこまで水か侵入したの
が検知することができる。Production J1 Generally, in moisture resistance tests of semiconductor devices, moisture in the atmosphere enters through the interface (gap) between the resin and the lead frame, travels along the bonding wire and reaches the pellet, causing aluminum corrosion. In this case, in the present invention, it is possible to detect how far the water has penetrated by checking the degree of fluorescence of the cross section of the oxidized resin.
また、樹脂クラックについても、同様に、クラ１りが深
さ方向にどこまで入っているかを、クラック内面の酸化
具合、つまり酸化している時は白（、酸化していない場
合は黒（見ることを知ることによって、クラック部分の
深さ、領域について確認することができる。Similarly, regarding resin cracks, the degree of oxidation on the inner surface of the crack, in other words, the degree of oxidation on the inner surface of the crack, that is, the degree of oxidation (white if oxidized, black if not oxidized), is similar to the depth of the crack. By knowing this, it is possible to confirm the depth and area of the crack.
また、樹脂とリードフレームの密着性については、従来
技術に比べ樹脂クラｙり解析方法と同様に前処理は必要
ない。しかも、従来のラジオグラフィー法は、放射性物
質を使用するために、非常に危険であるのに対して、本
発明では、安全に行うことができる。Furthermore, with respect to the adhesion between the resin and the lead frame, no pretreatment is required as in the resin cry analysis method compared to the prior art. Moreover, whereas conventional radiography methods are very dangerous due to the use of radioactive materials, the present invention can be performed safely.
炎五性
この発明は、樹脂モールド半導体装置に於いて発生した
樹脂クラック及び樹脂とリードフレームの密ｎ性等の不
良解析に関する樹脂内部について確認する。This invention examines the interior of the resin regarding failure analysis such as resin cracks occurring in resin molded semiconductor devices and the tightness of the resin and lead frame.
まず、樹脂クラック確認方法については、第２図に示す
ように樹脂クラック３が入った半導体装置のサンプル２
を、高雰囲気中で周知の手段により、酸化させる（数時
間）。その後、第１図に示すようにクラック部分３の断
面４を確認するために、機械的に樹脂を割る。その樹脂
断面図を第３図に示すような機能の蛍光顕微鏡を用いて
、酸化された樹脂クラック部分の蛍光発色を確認する。First, regarding the resin crack confirmation method, as shown in FIG.
is oxidized (for several hours) by well-known means in a high atmosphere. Thereafter, the resin is mechanically split in order to confirm the cross section 4 of the cracked portion 3 as shown in FIG. Using a fluorescence microscope with a function as shown in FIG. 3, a cross-sectional view of the resin is used to confirm the fluorescence of the oxidized resin cracks.
ここで第３図に示す蛍光顕微鏡の概略について説明する
。水銀ランプ５より出た光が、励起フィルタ６及びダイ
クロイックミラー７を透過して試料にあたり、再びダイ
クロイックミラー７及び吸収フィルタ８を透過して、画
像が得られる。ここで、ダイクロイックミラー７、励起
フィルタ６、吸収フィルタ８について説明する。まず、
ダイクロイックミラー７とは、一種の干渉フィルターで
短波長を反射し、長波長を透過するもので励起フィルタ
６、吸収フィルタ８は、反射光と透過光のクロスオーバ
ーを防ぎ、良い像コントラストを得るためのものである
。Here, the outline of the fluorescence microscope shown in FIG. 3 will be explained. Light emitted from the mercury lamp 5 passes through an excitation filter 6 and a dichroic mirror 7, hits the sample, and passes through the dichroic mirror 7 and absorption filter 8 again to obtain an image. Here, the dichroic mirror 7, excitation filter 6, and absorption filter 8 will be explained. first,
Dichroic mirror 7 is a type of interference filter that reflects short wavelengths and transmits long wavelengths. Excitation filter 6 and absorption filter 8 are used to prevent crossover of reflected light and transmitted light and obtain good image contrast. belongs to.
次に、樹脂とリードフレームの密着性については、耐湿
性試験との相関結果について示す。Next, regarding the adhesion between the resin and the lead frame, the correlation results with the moisture resistance test will be shown.
Ｃプレッシャークツカーテスト（ＰＣＴ）の取り出し時
間の差で水の侵入度合いにどのような差が出るか。］
樹脂クランク確認方法と同様に、サンプルを高温酸化さ
せ、その後、第４図に示すように、樹脂９とリードフレ
ーム１０の界面を機械的に割って、その断面を蛍光顕微
鏡で確認する。その結果、耐湿性試験の時間が進行する
につれて、水の侵入は進み、アルミ腐食不良が発生した
サンプルについては、リード部側のボンディング地点に
まで水分が侵入していることが確認された。C. What kind of difference in the degree of water intrusion occurs depending on the difference in removal time of the pressure tester test (PCT)? ] Similar to the resin crank confirmation method, the sample is oxidized at a high temperature, and then, as shown in FIG. 4, the interface between the resin 9 and the lead frame 10 is mechanically broken, and the cross section is confirmed using a fluorescence microscope. As a result, it was confirmed that as the time of the moisture resistance test progressed, water intrusion progressed, and in the sample where aluminum corrosion failure occurred, moisture infiltrated to the bonding point on the lead side.
これは、水がボンディングワイヤを伝ってペレットに到
達したことを裏づける結果である。This result supports that water reached the pellet through the bonding wire.
光ｊ目と復未−
本発明によれば、従来技術に比べ短時間で、かつ、簡単
に、実施クラックや樹脂とリードフレームの密着性を確
認することができ１、樹脂内部検査方法として、不良解
析を簡単に早く、正確に行うことができる。Light and recovery - According to the present invention, cracks and adhesion between resin and lead frame can be confirmed in a shorter time and easier than conventional techniques.1 As a resin internal inspection method, Failure analysis can be performed easily, quickly, and accurately.
第２図は、本発明の一実施例を説明するためのｔ導体装
置の斜視図、第１図、第４図はその半導体装置の一部破
断断面図、第３図は蛍光顕微鏡の概念図、第５図は、従
来技術である樹脂埋めしたｔ導体装置の斜視図、第６図
は、その（第５図）一部破断断面図である。
■・・・埋込み用樹脂部、
２・・・樹脂モールド部、
３・・・クラック部、
４・・・クラック部分の断面、FIG. 2 is a perspective view of a t-conductor device for explaining one embodiment of the present invention, FIGS. 1 and 4 are partially cutaway sectional views of the semiconductor device, and FIG. 3 is a conceptual diagram of a fluorescence microscope. , FIG. 5 is a perspective view of a prior art resin-filled t-conductor device, and FIG. 6 is a partially cutaway sectional view thereof (FIG. 5). ■...Resin part for embedding, 2...Resin mold part, 3...Crack part, 4...Cross section of crack part,
Claims (1)
フレームの密着性等の不良解析に関し、樹脂断面を高温
にて酸化させて、機械的研磨等により露出させ、その樹
脂断面の蛍光発色度合を蛍光顕微鏡を用いて確認するこ
とを特徴とする樹脂モールド部品の樹脂内部検査方法Regarding defect analysis such as resin cracks and adhesion between resin and lead frame in resin molded parts, the cross section of the resin is oxidized at high temperature, exposed by mechanical polishing etc., and the degree of fluorescence of the resin cross section is measured using a fluorescence microscope. A resin internal inspection method for resin molded parts, characterized by checking the resin interior by
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18928088A JPH0238849A (en) | 1988-07-28 | 1988-07-28 | Inspection of inside of resin |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18928088A JPH0238849A (en) | 1988-07-28 | 1988-07-28 | Inspection of inside of resin |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0238849A true JPH0238849A (en) | 1990-02-08 |
Family
ID=16238678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18928088A Pending JPH0238849A (en) | 1988-07-28 | 1988-07-28 | Inspection of inside of resin |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0238849A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000234993A (en) * | 1999-02-16 | 2000-08-29 | Mitsubishi Electric Corp | Defect inspection method of power semiconductor device |
| CN103308529A (en) * | 2013-06-21 | 2013-09-18 | 中国科学院上海光学精密机械研究所 | Method for detecting subsurface defects of optical glass |
-
1988
- 1988-07-28 JP JP18928088A patent/JPH0238849A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000234993A (en) * | 1999-02-16 | 2000-08-29 | Mitsubishi Electric Corp | Defect inspection method of power semiconductor device |
| CN103308529A (en) * | 2013-06-21 | 2013-09-18 | 中国科学院上海光学精密机械研究所 | Method for detecting subsurface defects of optical glass |
| CN103308529B (en) * | 2013-06-21 | 2015-05-13 | 中国科学院上海光学精密机械研究所 | Method for detecting subsurface defects of optical glass |
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