JPH0234773A - Vapor deposition device - Google Patents

Abstract

PURPOSE:To uniformly heat a material to be vapor-deposited and to maintain a stable rate of evaporation by fixing a light introducing body in the wall of a vapor deposition chamber so that the material can be heated with IR radiated from the outside. CONSTITUTION:A holding vessel 3 is put in a vapor deposition chamber 1 and a material 2 to be vapor-deposited is held in the vessel 3. A heating element 4 is set at the outside of the chamber 1 and used as a heat source for evaporating the material 2. A light introducing body 7 is fixed in the wall of the chamber 1 so as to introduce direct light and/or reflected light from the element 4 into the vessel 3.

Description

DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a vapor deposition apparatus that utilizes thermal radiation heating from an evaporative heat source to form a thin film of an organic compound or the like.

<Prior art> Conventional method for thinning an organic compound, especially a film thickness of 0°1 μm
As a method to uniformly form a thin film of about several μm,
Solution coating methods have been used for special applications.

Additionally, there is a plasma method as a special method. In the plasma method, for example, an organic compound monomer is turned into plasma by passing through a glow discharge region of low-vacuum argon gas, and the organic monomer is polymerized on the surface of a substrate placed in the plasma.

However, these methods are extremely limited in the types of raw materials, and regarding the plasma method, there are problems with impurity contamination due to the introduction of gas for plasma generation, controllability of plasma generation conditions, and the relationship between the raw material heating temperature and plasma temperature. There are problems such as decomposition of raw materials due to large differences. In particular, functional organic materials and functional polymer materials, which have been actively researched in recent years, lack suitable solvents or lose their functionality due to decomposition.
These conventional methods are difficult to apply.

Therefore, as a method that is more general-purpose and provides better controllability of film thickness, a vacuum evaporation method is used as a dry process. In addition to normal vapor deposition methods, ion cluster beam methods, ion irradiation vacuum vapor deposition methods, and the like are being used as advances in vapor deposition methods.

These have the feature of irradiating raw materials or substrates with ions, and are intended to effectively form thin films.

Generally, in the vacuum evaporation method, stable evaporation of raw materials with good controllability is a necessary condition for forming a high-quality thin film. Yoiki compound materials have the advantage of requiring relatively less energy for evaporation than inorganic compound materials, but on the other hand, many have evaporation and decomposition temperatures close to each other, or are sublimable, and also have poor thermal conductivity. It is not easy to control the evaporation rate due to factors such as low

The conventionally used evaporation method using resistance heating is a method in which the crucible is heated and the entire raw material is heated and evaporated by heat conduction between the crucible and the sample and between the samples. For this reason, in general, with organic compounds with low thermal conductivity, the entire raw material is not heated uniformly, and local decomposition or overheated sublimation from the part in direct contact with the crucible wall may be rate-limiting, resulting in stable stability over a long period of time. It is often difficult to maintain evaporation rates.

In order to solve this problem, attempts have been made to evaporate the materials by electron beam heating, by supplying the raw material onto the surface of the drum and evaporating it, and by flash evaporation, but all of these methods are limited in the materials that can be used. Another relatively versatile method is to supply high-frequency power from outside the container to the heating particles dispersed in the raw material for evaporation, absorb the energy, and use the heated particles to uniformly spread the raw material. There is a method of heating and evaporating it. However, in this method, the relationship between the power of the external energy source consumed and the temperature of the raw material, that is, the temperature of the heating particles, is not simple and may change depending on the type of particles in the raw material for evaporation or insects. The problem of reproducibility is in principle unavoidable.

<Problems to be Solved by the Invention> As mentioned above, vacuum evaporation is being applied as a method for forming thin films of organic compounds due to its advantages in terms of formation conditions and controllability of film thickness, but as a heat source for evaporation, The problem is that there is no simple and stable device that operates stably over a long period of time.

SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide a vapor deposition apparatus that can uniformly heat a material for vapor deposition, is stable over a long period of time, and can maintain an evaporation rate regardless of the atmosphere.

Means for Solving the Problems> The means for solving the problems according to the present invention is as shown in FIGS. A heating element 4 as an evaporation heat source for the vapor deposition material 2 is provided outside the vapor deposition chamber 1, and a heating element 4 is provided outside the vapor deposition chamber 1.
A light introducing body 7 is provided for guiding at least one of the direct light 5a and the reflected light 5b from the heating element 4 to the storage container 3.

<Function> In the above problem solving means, the vapor deposition material 2 is placed in the storage container 3.
Pour in an appropriate amount and create a vacuum inside the deposition chamber.

Direct infrared light 5a emitted from the heating element 4 outside the vapor deposition chamber l and reflected light 5b reflected by the reflecting mirror 6 and condensed toward the storage container 3 pass through the light introduction body 7. The storage container 3 is irradiated with the evaporation material 2, and the vapor deposition material 2 is heated. At this time, since the vapor deposition material 2 is heated by infrared thermal radiation using absorption of the radiation light 5 by the vapor deposition material 2, the entire area of the vapor deposition material 2 is heated uniformly. and,
The vapor deposition material 2 is evaporated and deposited on the surface of the object 13 to form a thin film. Therefore, an infrared heating element 4 is placed outside the vapor deposition chamber l, and the vapor deposition is performed by thermal radiation heating using infrared radiation. The material 2 can be heated efficiently, and a stable evaporation rate can be maintained over a long period of time.

<Example> Hereinafter, the first example of the present invention will be explained based on Figures 1 and 2. Figure 1 is a schematic front view of a vapor deposition apparatus showing the first example of the present invention, and Figure 2 is the same. FIG. 3 is a cross-sectional view showing the relationship between a heating element and a vapor deposition material.

As shown in the figure, the vapor deposition apparatus of the present invention includes a storage container 3 for storing a vapor deposition material 2 inside a vapor deposition chamber 1, a heating element 4 as an evaporation heat source of the vapor deposition material 2 outside the vapor deposition chamber 1,
A reflecting mirror 6 is provided to reflect the emitted light from the heating element 4 and focus it on the storage container 3.
A light introducing body 7 is provided for guiding direct light 5a from the heating element 4 and reflected light 5b from the reflecting mirror 6 to the storage container 3.

The vapor deposition chamber 1 is formed in a cylindrical shape with an open bottom, and the bottom surface is in close contact with the table 8. An exhaust port 9 is provided in the reading 8 to create a vacuum inside the vapor deposition chamber 1, and a gas inlet IO is provided on the side of the vapor deposition chamber to form an oxidizing atmosphere containing oxygen, sulfur, halogen compounds, etc. is provided.

The storage container 3 is a container made of transparent quartz glass, and is fixedly supported in the vapor deposition chamber 1 by support legs 11, and the vapor deposition material 2 is put into the storage container 3. Further, a thermoelectric conversion element 12 such as a thermal lightning pair for measuring the temperature of the vapor deposition material 2 is attached to the inner surface of the storage container 3, and a temperature measuring section 12 is installed outside the vapor deposition chamber l.
connected to a.

The heating element 4 uses an infrared light bulb as a heat source, and is connected to a temperature control section 4a for temperature control, so that the temperature of the vapor deposition material 2 is kept constant according to a signal from the temperature measurement section 12a. Alternatively, temperature control is performed so that the temperature of the vapor deposition material 2 changes according to a fixed temperature control program. The heating element 4 is arranged outside the vapor deposition chamber 1 at a position horizontal to the storage container 3. A concave reflecting mirror 6 is provided at the rear of the heating element 4 on the opposite side from the vapor deposition chamber 1.
are arranged. The emitted light 5 from the heating element 4 is an electromagnetic wave equivalent to visible light, and the direction can be changed using a mirror, lens, etc. Therefore, a reflection fi6 such as a spherical mirror or a plane mirror may be used, and the emitted light 5 is emitted from the storage container. 3 and can be used extremely efficiently.

The light introducing body 7 is a transparent quartz glass body inserted into the vapor deposition chamber wall 1a between the storage container 3 and the heating element 4, and is a transparent quartz glass body inserted into the vapor deposition chamber wall 1a between the storage container 3 and the heating element 4. The outer periphery of the body 7 is sealed to the chamber wall 1a.

Note that the substrate, which is the object to be deposited 13, is fixedly held above the storage container 3 by a support 14.

In the above configuration, an appropriate amount of phthalonanine powder, which is an organic compound pigment, is put into the storage container 3 as the vapor deposition material 2, the vapor deposition chamber 1 is brought into close contact with the table 8, and exhaust is performed from the exhaust port 9 to make the vapor deposition chamber vacuum. Thereafter, the direct infrared light 5a emitted from the heating element 4 outside the deposition chamber 1 and the reflected light 5b reflected by the reflector 6 and condensed toward the storage container 3 are converted into infrared light. It passes through a transparent light introducing body 7.

Then, the storage container 3 is irradiated, and the phthalocyanine powder of the vapor deposition material 2 is heated. At this time, the heating of the vapor deposition material 2 by the infrared radiation 5 is not local non-uniform heating due to heat conduction, which is seen in the conventional crucible resistance heating method.
Since the absorption of the emitted light 5 by the vapor deposition material 2 is utilized, the entire area of the vapor deposition material 2 is uniformly heated regardless of the particle size and shape of the organic compound material.

Then, the metal phthalocyanine is sublimed by controlling the heating temperature according to the type of vapor deposition material 2 and the purpose of use, and is vapor deposited on the surface of the substrate of the vapor deposition object 13 to form a thin film.

Here, when comparing the heat radiation method using infrared rays of the present invention and the conventional evaporation method using resistance heating method, the configuration of the vacuum evaporation equipment used is completely the same except for the difference in the heating mechanism of the evaporation material, and the evaporation conditions are Deposition source temperature (500℃)
, the distance between the substrate and the heating element (50m+n), etc. are exactly the same. First, in the early stage of deposition, the deposition rate when using the present invention is about 20 people/m1n when using the conventional resistance heating method.
It was about twice as large. Furthermore, after this, the deposition rate after several hours of continuous deposition is approximately 1/4 of the initial rate (approximately 5 persons/m1) in the conventional method.
n), whereas it remained almost constant when the present invention was used.

Therefore, by placing the infrared heating element 4 outside the vapor deposition chamber 1, it is possible to efficiently heat the vapor deposition material 2, which is an organic compound having particularly poor thermal conductivity, by radiant heating using the infrared radiation. A stable evaporation rate can be maintained over a long period of time.

In addition, conventional resistance heating method or electron beam heating method,
In the flash evaporation method, etc., a self-heating element is installed in the deposition chamber 1, and installation and maintenance are complicated due to wear, damage, and burnout of the heating element. Although contamination is unavoidable, the present invention can in principle remove these, especially when depositing materials 2 in an oxidizing atmosphere.
It is difficult to apply the conventional resistance heating method when heating the
It is clear that the method using radiation heating poses no problem regardless of whether the material is organic or inorganic.

Next, a second embodiment of the present invention is shown in FIG. FIG. 3 is a sectional view showing the relationship between the heating element and the vapor deposition material, showing a second embodiment of the present invention.

In the first embodiment described above, a glass body transparent to infrared light was used as an example of the infrared introduction path for the synchrotron radiation, but as mentioned earlier, this is not possible in the atmosphere where the external heating element 4 is placed. From the deposition chamber! Since it is used to block the vapor deposition material 2 inside, it may be rod-shaped or highly elastic glass fiber-shaped as long as it has such a function.

Therefore, as shown in the figure, in this embodiment, the light introducing body 7 is a rod-shaped body with a double structure, which is made of a core 7a made of quartz glass and covered with a cladding 7b having a lower refractive index than the core 7a.
A storage container 3 is formed at the tip of the leading human body 7 on the vapor deposition chamber l side, and the surface opposite to the incident surface 15a of the synchrotron radiation 5 is a reflective surface +5b, making it possible to utilize heat radiation with high efficiency. It is possible.

The leading human body 7 is inserted into the deposition chamber wall 1a so that the storage container 3 and the heating element 4 are horizontal.

Therefore, the emitted light 5 from the heating element 4 is reflected inside the light introduction body 7 and conducted to the storage container 3, and the emitted light 5 reflected from the reflective surface +5b can also be used, so that efficient heating can be achieved. , and the same effects as in the first embodiment can be achieved.

In the third embodiment of the present invention, instead of heating the storage container 3 horizontally using radiation 5, as shown in FIG.
The storage container 3 is heated from the bottom.

As shown in the figure, a concave reflecting mirror 6a is disposed inside the deposition chamber 1 below the storage container 3 to convert the direction of the emitted light 5 and to focus the light on the lower part of the storage container 3. Incidentally, if only the function of changing the direction of the emitted light 5 is required, a plane mirror can also be used.

Further, a fourth embodiment of the present invention shown in FIG.
A heating element 4 is disposed at the bottom of the vapor deposition chamber 1 so as to heat the storage container 3 from the bottom by using a rod-shaped infrared ray introducing path in which the storage container 3 and the storage container 3 are integrally formed. Further, the same effects as those of the above embodiment are achieved.

It should be noted that the present invention is not limited to the above embodiments, and it goes without saying that many modifications and changes can be made to the above embodiments within the scope of the present invention.

For example, instead of using the direct light 5a and the reflected light 5b from the heating element 4, only one of the direct light 5a and the reflected light 5b may be used.

Although metal phthalocyanine, an organic compound, is used as the vapor deposition material 2, the upper limit of the heating temperature is determined by the material and shape used for the light introducing body 7, but if quartz glass is used, it can reach up to 1300 degrees Celsius; Needless to say, all compounds can be covered.

Furthermore, it goes without saying that the shape of the storage container 3 should be optimal depending on the type of vapor deposition material 2 and the necessity arising from the purpose of vapor deposition. Further, the light introducing body 7 may be formed into a condensing lens so that the emitted light can be efficiently utilized.

<Effects of the Invention> As is clear from the above description, according to the present invention, a storage container for storing a vapor deposition material is provided inside the vapor deposition chamber, and a heating element as an evaporation heat source for the vapor deposition material is provided outside the vapor deposition chamber. A light introducing member is provided on the wall of the vapor deposition chamber to guide at least one of direct light and reflected light from the heating element to the storage container. This has the excellent effect of uniformly heating the evaporation material and maintaining a stable evaporation rate over a long period of time.

[Brief explanation of the drawing]

FIG. 1 is a schematic front view of a vapor deposition apparatus showing a first embodiment of the present invention, FIG. 2 is a sectional view similarly showing the relationship between a heating element and a vapor deposition material, and FIG. FIG. 3(b) is a cross-sectional view showing the relationship between the heating element and the vapor deposition material in the embodiment, FIG. 3(b) is a plan view thereof, and FIG. FIG. 5 is a sectional view of the vapor deposition apparatus in a fourth embodiment of the present invention, in which a rod-shaped light guide is used to heat from the bottom. 1: Vapor deposition chamber, 2: Vapor deposition material, 3: Storage container, 4: Heating element, 5a: Direct light, 5b: Reflected light, 6: Reflector, 7: Light introduction body. Sharp Co., Ltd. Tsunehisa Nakamura Diagram (Next) 1 Steam, 1 room 2, black,! Hair 3 Il and leopard 4 ≧ ~ ζ dust, I. Figure 3 (b) 1st 2

Claims (1)

[Claims] A storage container for storing a vapor deposition material is provided inside the vapor deposition chamber, a heating element is provided outside the vapor deposition chamber as an evaporation heat source for the vapor deposition material, and direct light and light from the heating element are provided on the wall of the vapor deposition chamber. A vapor deposition apparatus comprising a light introducing body for guiding at least one of the reflected lights to a storage container.