JPH023294B2 - - Google Patents
Info
- Publication number
- JPH023294B2 JPH023294B2 JP55116643A JP11664380A JPH023294B2 JP H023294 B2 JPH023294 B2 JP H023294B2 JP 55116643 A JP55116643 A JP 55116643A JP 11664380 A JP11664380 A JP 11664380A JP H023294 B2 JPH023294 B2 JP H023294B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- etching
- sample
- wafer
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005530 etching Methods 0.000 claims description 30
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 38
- 239000011261 inert gas Substances 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 8
- 239000012495 reaction gas Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11664380A JPS5740931A (en) | 1980-08-25 | 1980-08-25 | Plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11664380A JPS5740931A (en) | 1980-08-25 | 1980-08-25 | Plasma processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5740931A JPS5740931A (en) | 1982-03-06 |
| JPH023294B2 true JPH023294B2 (US06534493-20030318-C00166.png) | 1990-01-23 |
Family
ID=14692281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11664380A Granted JPS5740931A (en) | 1980-08-25 | 1980-08-25 | Plasma processing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5740931A (US06534493-20030318-C00166.png) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6074626A (ja) * | 1983-09-30 | 1985-04-26 | Fujitsu Ltd | ウエハー処理方法及び装置 |
| JPH0514011Y2 (US06534493-20030318-C00166.png) * | 1984-12-27 | 1993-04-14 | ||
| GB2208549B (en) * | 1987-08-03 | 1991-10-02 | Hitachi Ltd | Angle sensor for throttle valve of internal combustion engine |
| JPH0670986B2 (ja) * | 1989-09-27 | 1994-09-07 | 株式会社日立製作所 | 真空処理装置の試料保持方法 |
-
1980
- 1980-08-25 JP JP11664380A patent/JPS5740931A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5740931A (en) | 1982-03-06 |
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