JPH02308227A - Active matrix substrate - Google Patents
Active matrix substrateInfo
- Publication number
- JPH02308227A JPH02308227A JP1131105A JP13110589A JPH02308227A JP H02308227 A JPH02308227 A JP H02308227A JP 1131105 A JP1131105 A JP 1131105A JP 13110589 A JP13110589 A JP 13110589A JP H02308227 A JPH02308227 A JP H02308227A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- lower layer
- display
- insulating film
- layer electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 16
- 239000011159 matrix material Substances 0.000 title claims abstract description 15
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000011149 active material Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は液晶表示装置のアクティブマトリクス基板に利
用され、特にスイッチング素子としてMIM(金属−絶
縁物−金属)素子を用いたMIM型のアクティブマトリ
クス基板に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention is applied to an active matrix substrate of a liquid crystal display device, and particularly to an MIM type active matrix using an MIM (metal-insulator-metal) element as a switching element. Regarding the board.
本発明は、スイッチング素子としてMIM素子を用いた
MIM型のアクティブマトリクス基板において、
前記MIM素子を、下層電極が信号電極に、上層電極が
表示電極にそれぞれ接続された第一のM−I M素子と
、下層電極が表示電極に、上層電極が信号電極にそれぞ
れ接続された第二のMIM素子とが並列に接続された構
成とすることにより、表示むらのない高画質の液晶表示
装置が得られるようにしたものである。The present invention provides an MIM type active matrix substrate using an MIM element as a switching element, in which the MIM element is connected to a first M-IM element whose lower layer electrode is connected to a signal electrode and whose upper layer electrode is connected to a display electrode. and a second MIM element whose lower layer electrode is connected to the display electrode and whose upper layer electrode is connected to the signal electrode are connected in parallel, whereby a high-quality liquid crystal display device with no display unevenness can be obtained. This is how it was done.
従来のMIM型のアクティブマトリクス基板は、第3図
に示すように、表示電極2に接続された下層電極8と、
下層電極8と絶縁膜7を介して対向し信号電極1に接続
された上層電極9とからなっていた。As shown in FIG. 3, a conventional MIM type active matrix substrate includes a lower electrode 8 connected to a display electrode 2,
It consisted of a lower layer electrode 8 and an upper layer electrode 9 facing each other with an insulating film 7 in between and connected to the signal electrode 1.
前述した従来のMIM型のアクティブマ)IJクス基板
は、下層電極8と絶縁膜7と上層電極9とからなるMI
M素子の電気的対称性や特性の均一性を保持するのが困
難である欠点があった。このため、従来のMIM型のア
クティブマトリクス基板を用いて液晶表示装置を作成す
ると、MIM素子の特性のばらつきにより表示にむらが
でき画質が低下する欠点があった。The conventional MIM type active material IJ substrate described above is an MI type consisting of a lower layer electrode 8, an insulating film 7, and an upper layer electrode 9.
There is a drawback that it is difficult to maintain the electrical symmetry and uniformity of characteristics of the M element. For this reason, when a liquid crystal display device is manufactured using a conventional MIM type active matrix substrate, there is a drawback that the display becomes uneven due to variations in the characteristics of the MIM elements, and the image quality deteriorates.
本発明の目的は、前記の欠点を除去することにより、表
示むらのない高画質の液晶表示装置を作ることができる
MIM型のアクティブマトリクス基板を提供することに
ある。SUMMARY OF THE INVENTION An object of the present invention is to provide an MIM-type active matrix substrate that eliminates the above-mentioned drawbacks, thereby making it possible to produce a liquid crystal display device with high image quality and no display unevenness.
本発明は、信号電極と、表示電極と、前記信号電極と前
記表示電極との間に設けられたMIM素子とを備えたア
クティブマトリクス基板において、前記MIM素子は、
前記信号電極に接続された第一下層電極と、前記表示電
極に接続された第二下層電極と、前記第一および第二下
層電極上に設けられた絶縁膜と、この絶縁膜上に前記第
一下層電極と対向して設けられ前記表示電極および前記
第二下層電極にそれぞれ接続された第一上層配線と、前
記絶縁膜上に前記第二下層電極と対向して設けられ前記
信号電極および前記第一下層電極にそれぞれ接続された
第二上層配線とを含んで構成されたことを特徴とする。The present invention provides an active matrix substrate including a signal electrode, a display electrode, and an MIM element provided between the signal electrode and the display electrode, wherein the MIM element comprises:
a first lower electrode connected to the signal electrode; a second lower electrode connected to the display electrode; an insulating film provided on the first and second lower electrodes; a first upper layer wiring provided opposite to the first lower layer electrode and connected to the display electrode and the second lower layer electrode, respectively; and a first upper layer wiring provided opposite to the second lower layer electrode on the insulating film and the signal electrode and a second upper layer wiring connected to the first lower layer electrode, respectively.
本発明におけるMIM素子は、下層電極が信号電極に、
上層電極が表示電極にそれぞれ接続された第一のMIM
素子と、下層電極が表示電極に、上層電極が信号電極に
それぞれ接続された第二のMIM素子とが並列に接続さ
れた構成をなしている。In the MIM element of the present invention, the lower electrode is a signal electrode,
a first MIM in which upper layer electrodes are respectively connected to display electrodes;
The element and a second MIM element whose lower layer electrode is connected to the display electrode and whose upper layer electrode is connected to the signal electrode are connected in parallel.
従って、第一および第二のMIM素子が、下層電極と上
層電極との材料の違いや、製造法およびプロセス順序に
より特性が非対称になっても、全体の特性は一画素に対
しては完全に対称となり、表示むらのない高画質の液晶
表示装置を作ることが可能となる。Therefore, even if the characteristics of the first and second MIM elements become asymmetric due to differences in the materials of the lower and upper electrodes, manufacturing methods, and process order, the overall characteristics for one pixel are perfect. This makes it possible to create a high-quality liquid crystal display device that is symmetrical and has no display unevenness.
以下、本発明の実施例について図面を参照して説明する
。Embodiments of the present invention will be described below with reference to the drawings.
第1図は本発明の第一実施例の要部を示す平面図である
。FIG. 1 is a plan view showing essential parts of a first embodiment of the present invention.
本第−実施例は、信号電極1と、表示電極2と、信号電
極1と表示電極2との間に設けられたMIM素子とを備
えたアクティブマトリクス基板において、
前記MIM素子は、本発明の特徴とするところの、信号
電極1に接続された第一下層電極3と、表示電極2に接
続された第二下層電極4と、第一および第二下層電極3
および4上に設けられた絶縁膜7と、この絶縁膜7上に
第一下層電極3と対向して設けられ表示電極2および第
二下層電極4にそれぞれ接続された第一上層配線5と、
絶縁膜7上に第二下層電極4と対向して設けられ信号電
極2および第一下層電極3にそれぞれ接続された第二上
層配線6とを含んで構成される。The present embodiment is an active matrix substrate including a signal electrode 1, a display electrode 2, and an MIM element provided between the signal electrode 1 and the display electrode 2. Features include a first lower electrode 3 connected to the signal electrode 1, a second lower electrode 4 connected to the display electrode 2, and first and second lower electrodes 3.
and an insulating film 7 provided on the insulating film 7, and a first upper layer wiring 5 provided on the insulating film 7 facing the first lower layer electrode 3 and connected to the display electrode 2 and the second lower layer electrode 4, respectively. ,
The second upper layer wiring 6 is provided on the insulating film 7 to face the second lower layer electrode 4 and connected to the signal electrode 2 and the first lower layer electrode 3, respectively.
本第−実施例は次のようにして製造されたものである。The present example was manufactured as follows.
まず始めに、信号電極1と、信号電極1に接続された第
一下層電極3と、表示電極2と、表示電極2に接続され
た第二下層電極4とを、ITO(酸化インジウムスズ)
1000人をスパッタ法により形成した後パターニン
グする。次に、絶縁膜7として窒化シリコン膜1000
人をプラズマCVD法により形成した後パターニングす
る。次いで、第一下層電極3と絶縁膜7を介して対向さ
せた第一上層電極5を表示電極2と第二下層電極4とに
接続させ、第二下層電極4と絶縁膜7を介して対向させ
た第二上層電極6を信号電極1と第一下層電極3と接続
させるように、クロム膜1000 Aをスパッタ法によ
り形成した後パターニングして、本第−実施例のMIM
型のアクティブマトリクス基板が製造された。First, the signal electrode 1, the first lower layer electrode 3 connected to the signal electrode 1, the display electrode 2, and the second lower layer electrode 4 connected to the display electrode 2 are made of ITO (indium tin oxide).
After forming 1,000 layers by sputtering, patterning is performed. Next, a silicon nitride film 1000 is used as the insulating film 7.
After forming a person by plasma CVD method, patterning is performed. Next, the first upper electrode 5 facing the first lower electrode 3 and the insulating film 7 is connected to the display electrode 2 and the second lower electrode 4, and the second lower electrode 4 and the insulating film 7 are connected to each other. A chromium film of 1000 A was formed by sputtering and then patterned so as to connect the opposing second upper layer electrode 6 to the signal electrode 1 and the first lower layer electrode 3, thereby forming the MIM of this first embodiment.
A type of active matrix substrate was manufactured.
このように製造されたMIM素子は、下層電極と上層電
極の材質の違いや製造法およびプロセスの順序により特
性が非対称であるが、本発明では1表示画素に対して構
造が逆の2素子を並列に接続してるため、1表示画素に
対しては特性が完全に対称となる。このMIM型のアク
ティブマトリクス基板を用いて液晶ディスプレイを作成
したところ、表示均一性の良い高画質の液晶表示装置が
得られた。The MIM element manufactured in this way has asymmetrical characteristics due to the difference in the materials of the lower and upper electrodes, the manufacturing method, and the order of the process, but in the present invention, two elements with opposite structures are used for one display pixel. Since they are connected in parallel, the characteristics are completely symmetrical for one display pixel. When a liquid crystal display was created using this MIM type active matrix substrate, a high quality liquid crystal display with good display uniformity was obtained.
第2図は本発明の第二実施例の要部を示す平面図である
。FIG. 2 is a plan view showing essential parts of a second embodiment of the present invention.
本第二実施例は、構成は第一実施例と同じであるが、製
造方法が異なり、次のようにして製造されたものである
。The second embodiment has the same structure as the first embodiment, but the manufacturing method is different and was manufactured as follows.
まず始めに、信号電極1と、信号電極1に接続された第
一下層電極3と、第二下層電極4とを、クロム膜100
0人をスパッタ法により形成した後パターニングする。First, the signal electrode 1, the first lower electrode 3 connected to the signal electrode 1, and the second lower electrode 4 are connected to the chromium film 100.
After forming a layer by sputtering, patterning is performed.
次に、絶縁膜7として窒化シリコン膜1000人をプラ
ズマCVD法により形成した後パターニングする。次い
で、第二下層電極4と接続された表示電極2と、表示電
極2および第二下層電極4とそれぞれ接続され第一の下
層電極3と絶縁膜7を介して対向する第一の上層電極5
と、信号電極lおよび第一下層電極3とそれぞれ接続さ
れ第二下層電極4と絶縁膜7を介して対向する第二上層
電極6とを、ITO膜1000 Aをスパッタ法により
形成した後パターニングして、本第二実施例のMIM型
のアクティブマ) IJクス基板が製造された。Next, a silicon nitride film of 1,000 layers is formed as an insulating film 7 by plasma CVD, and then patterned. Next, the display electrode 2 is connected to the second lower electrode 4, and the first upper electrode 5 is connected to the display electrode 2 and the second lower electrode 4 and faces the first lower electrode 3 with the insulating film 7 in between.
and a second upper layer electrode 6 connected to the signal electrode 1 and the first lower layer electrode 3 and facing the second lower layer electrode 4 with an insulating film 7 in between, an ITO film 1000 A is formed by sputtering and then patterned. In this manner, an MIM type active material IJ substrate of the second embodiment was manufactured.
本第二実施例では、信号電極1と表示電極2とを別々に
形成しているため、信号電極1の配線抵抗を防ぐことが
できる利点がある。本第二実施例も第一実施例と同じ理
由で、1表示画素に対するMrM特性が完全に対称とな
る。In the second embodiment, since the signal electrode 1 and the display electrode 2 are formed separately, there is an advantage that wiring resistance of the signal electrode 1 can be prevented. In the second embodiment, the MrM characteristics for one display pixel are completely symmetrical for the same reason as in the first embodiment.
以上説明したように、本発明によれば、MIM素子が下
層電極と上層電極の材質の違いや製造法およびプロセス
の順序により特性が非対称になっても、1表示画素に対
しては構造が逆の2素子を並列に接続しているため、1
表示画素に対しては特性が完全に対象となり、製造工程
数を増やすことなく、表示むらのない高画質の液晶表示
装置を得ることができるMIM型のアクティブマトリク
ス基板を提供することができ、その効果は大である。As explained above, according to the present invention, even if the characteristics of the MIM element become asymmetric due to the difference in the materials of the lower and upper electrodes, the manufacturing method, and the order of the processes, the structure is reversed for one display pixel. Since two elements are connected in parallel, 1
It is possible to provide an MIM-type active matrix substrate whose characteristics are completely symmetrical to display pixels, and which can provide a high-quality liquid crystal display device with no display unevenness without increasing the number of manufacturing steps. The effect is great.
第1図は本発明の第一実施例の要部を示す平面図。
第2図は本発明の第二実施例の要部を示す平面図。
第3図は従来例の要部を示す平面図。
l・・・信号電極、2・・・表示電極、3・・・第一下
層電極、4・・・第二下層電極、5・・・第一上層電極
、6・・・第二上層電極、7・・・絶縁膜、8・・・下
層電極、9・・・上層電極。
特許出願人 日本電気株式会社 4
代理人 弁理士 井 出 直 孝
3:だ一下層11&
冒 1 口 話−笑込例
I:信’!@他 4:島−下層電極 7:紀鶴2:&
示1i暑 5:ハー上1電極
3ニー−下1電鴇 6:篤2ヱ畳電袖
菖 2 口 菖二夾2例
1:18号@pii8:下看電橘
2:五本電極 9:ヱ看電亀
7:総緑屓FIG. 1 is a plan view showing the main parts of a first embodiment of the present invention. FIG. 2 is a plan view showing the main parts of a second embodiment of the present invention. FIG. 3 is a plan view showing the main parts of the conventional example. l... Signal electrode, 2... Display electrode, 3... First lower layer electrode, 4... Second lower layer electrode, 5... First upper layer electrode, 6... Second upper layer electrode , 7... Insulating film, 8... Lower layer electrode, 9... Upper layer electrode. Patent Applicant NEC Corporation 4 Agent Patent Attorney Nao Takashi Ide 3: Lower level 11 & profanity 1 Talk - Laughter Example I: Shin'! @Others 4: Island-lower electrode 7: Kisuru 2: &
Indication 1i heat 5: Her upper 1 electrode 3 knees - lower 1 electric wire 6: Atsushi 2 tatami electric sleeve 2 cases 1: No. 18 @ pii 8: Lower view electric Tachibana 2: Five electrodes 9: Ekan Denkame 7: Soryokuran
Claims (1)
電極との間に設けられたMIM素子とを備えたアクティ
ブマトリクス基板において、 前記MIM素子は、 前記信号電極に接続された第一下層電極と、前記表示電
極に接続された第二下層電極と、前記第一および第二下
層電極上に設けられた絶縁膜と、この絶縁膜上に前記第
一下層電極と対向して設けられ前記表示電極および前記
第二下層電極にそれぞれ接続された第一上層配線と、前
記絶縁膜上に前記第二下層電極と対向して設けられ前記
信号電極および前記第一下層電極にそれぞれ接続された
第二上層配線とを含んで構成された ことを特徴とするアクティブマトリクス基板。[Claims] 1. An active matrix substrate including a signal electrode, a display electrode, and an MIM element provided between the signal electrode and the display electrode, wherein the MIM element is provided in the signal electrode. a connected first lower layer electrode, a second lower layer electrode connected to the display electrode, an insulating film provided on the first and second lower layer electrodes, and a first lower layer provided on the insulating film. a first upper layer wiring provided opposite to the electrode and connected to the display electrode and the second lower layer electrode, respectively; and a first upper layer wiring provided on the insulating film opposite to the second lower layer electrode and connected to the signal electrode and the first An active matrix substrate comprising second upper layer wirings respectively connected to lower layer electrodes.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13110589A JP2527032B2 (en) | 1989-05-24 | 1989-05-24 | Active matrix substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13110589A JP2527032B2 (en) | 1989-05-24 | 1989-05-24 | Active matrix substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02308227A true JPH02308227A (en) | 1990-12-21 |
JP2527032B2 JP2527032B2 (en) | 1996-08-21 |
Family
ID=15050095
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13110589A Expired - Lifetime JP2527032B2 (en) | 1989-05-24 | 1989-05-24 | Active matrix substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2527032B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5552910A (en) * | 1993-11-29 | 1996-09-03 | Sharp Kabushiki Kaisha | Liquid crystal display having zinc sulfide switching elements and method for producing the same |
US5734452A (en) * | 1994-09-26 | 1998-03-31 | Sharp Kabushiki Kaisha | Two-terminal non-linear resistive device and a method for producing the same in which nickel or iron is an impurity in the zinc sulfide layer |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57211185A (en) * | 1981-06-23 | 1982-12-24 | Suwa Seikosha Kk | Liquid crystal display |
-
1989
- 1989-05-24 JP JP13110589A patent/JP2527032B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57211185A (en) * | 1981-06-23 | 1982-12-24 | Suwa Seikosha Kk | Liquid crystal display |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5552910A (en) * | 1993-11-29 | 1996-09-03 | Sharp Kabushiki Kaisha | Liquid crystal display having zinc sulfide switching elements and method for producing the same |
US5734452A (en) * | 1994-09-26 | 1998-03-31 | Sharp Kabushiki Kaisha | Two-terminal non-linear resistive device and a method for producing the same in which nickel or iron is an impurity in the zinc sulfide layer |
Also Published As
Publication number | Publication date |
---|---|
JP2527032B2 (en) | 1996-08-21 |
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