JPH0230596B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device using an indium antimonide semiconductor or the like.

Conventional semiconductor devices, such as magnetoelectric transducers, use an organic adhesive such as an epoxy resin adhesive on a thin substrate made of glass or ferrite, as described in Japanese Patent Publication No. 40746/1983. It is constructed by bonding polished wafers and etching them into a predetermined shape.

However, when an adhesive layer is interposed between the wafer and the substrate as described above, it is difficult to obtain an adhesive layer with a uniform thickness. However, it has been difficult to mass produce magnetoelectric transducers with uniform characteristics.

In addition, in such conventional magnetoelectric transducer devices, when the temperature of the atmosphere rises, the thermal expansion coefficients of the adhesive and the semiconductor material differ, so the magnetoelectric transducer element on the substrate deforms and the piezo voltage due to the piezo effect is reduced. Occur. That is, in a high-temperature atmosphere, the temperature characteristics of the unbalanced voltage deteriorate, which causes a drawback of deteriorating the output characteristics of the magnetoelectric transducer. This was an extremely hindrance when measuring minute level changes in magnetic flux density.

The present invention was made to solve the above-mentioned drawbacks, and provides a bulk type semiconductor device constructed without using an organic adhesive.

An embodiment of the present invention will be described in detail below with reference to the accompanying drawings.

Figures 1 and 2 show the case of constructing a Hall device, in which silicon monoxide (SiO ) or silicon dioxide (SiO ₂ )
In the case of the substrate 1 of an intermetallic compound semiconductor, an oxide film or a semi-insulating layer is formed, for example, in the case of gallium arsenide, a layer 2 with carbon dioxide gas diffusion or chromium diffusion is formed. Coating layer 2 on the corners
metal layers 3, 4, 5, 6 separated from each other 7 on top of the
form. These metal layers 3, 4, 5, and 6 are made of indium (In), tin (Sn), sulfur (pb), etc. in consideration of the ohmic properties and melting points of the semiconductor used, such as indium antimonide (InSb). , a metal with a lower melting point than the semiconductor is selected. metal layer 3,
4, 5, and 6 each occupy a corner portion of the substrate 1 having a quadrilateral surface, and have a quadrilateral shape.
A corner portion located at the center of the substrate 1 is formed parallel to a diagonal line of the substrate 1.

A semiconductor plate 8 is mounted on the metal layers 3, 4, 5, 6 using these as electrodes. The semiconductor plate 8 is made of InSb ingot with a thickness of 0.3 to 1.0 mm.
The wafer is cut into a certain thickness and polished to form a predetermined shape, for example, a cross shape in the case of a Hall element, and the thickness is 50 to 100 μm.
That is, the plate 8 has a magnetic sensing part 9 and an input electrode part 1.
0 and 11 and output electrode sections 12 and 13, the input electrode sections 10 and 11 are bonded to the metal layers 3 and 5, and the output electrode sections 12 and 13 are bonded to the metal layers 4 and 6. The electrode parts 10, 11, 12, 13 and the metal layers 3, 4, 5, 6 are bonded together by melting the metal layers.

In the above configuration, the magnetically sensitive portion 9 of the semiconductor plate 8
A gap 14 is formed between the plate 8 and the insulating coating layer 2, but when the thickness of the plate 8 is about 50 to 100 μm, there is no need to take into account cracking or stress distortion of the plate 8 as it is. Reliability will increase if a resin, for example a thermosetting resin with excellent heat resistance and low viscosity such as a polyester resin, is filled by vacuum impregnation.

However, if the semiconductor plate 8 is as thin as about 5 to 10 μm, as shown in FIG.
A second insulating coating layer 15 is formed in a portion corresponding to . This coating layer 15 includes metal layers 3, 4, 5, 6.
The thickness should be approximately the same or slightly thinner.

Further, as another embodiment, as shown in FIG. 4, the substrate 1 is specified as a semiconductor silicon substrate, and a protrusion 16 is formed on the surface of the substrate 1 in correspondence with the above-mentioned void 14. An insulating coating layer 2 is formed thereon. The metal layers 3, 4, 5, and 6 are formed in the same manner as described above except for the protrusion 16 portion.

In the above, an example using a wafer has been described, but when using a vapor-deposited InSb layer, as shown in FIG. An InSb semiconductor layer 18 deposited in the shape of a cross as shown in FIG. 1 is used. In this case, the substrate 17 is made of a material that transmits the laser beam, for example, a wavelength of 0.6 to 0.9 μm, such as cinnamate glass or sodium glass. It's okay.

The above explanation can also be applied to the case of magnetoresistive elements. If the example shown in FIGS. 1 and 2 is applied, the substrate 19 as shown in FIGS.
An insulating film layer 20 is provided on the surface of the substrate 19, and metal layers 21 and 22 for electrodes are formed on both ends of the substrate 19, and short circuits are formed between the metal layers 21 and 22 at equal intervals and in parallel. A large number of wire metal layers 23 for electrodes are provided. A semiconductor plate 24 is bonded onto these. Adhesion is the metal layer 21, 2
This is done by melting 2, 23, and the void 25
can be processed in the same way as the examples shown in FIGS. 1 to 4 above. Furthermore, the method shown in FIG. 5 is applied to devices formed by vapor deposition.

In all of the above embodiments, the case where the metal layer is formed on the substrate side has been described, but it is also possible to deposit the metal layer at predetermined positions on the semiconductor plate and the deposited semiconductor layer, and fuse both with the metal layer on the substrate. Can be attached and glued.

FIG. 8 shows a case where a junction type semiconductor device such as a transistor is formed on the semiconductor silicon substrate 26, and P
N-type regions, ie, collector regions 27 and 28, are formed in the shaped silicon substrate 26, P-type regions, ie, base regions 29 and 30 are formed in these regions, and further N-type regions are formed in the regions 29 and 30. That is, emitter regions 31 and 32 are formed to constitute two transistors. The entire surface of the substrate 26 is covered with an insulating coating layer 33 of SiO or SiO ₂ . At predetermined positions of the insulating coating layer 33, there are window holes 34, 35, 36, 37, 3 through which the semiconductor surface of each region mentioned above is exposed.
Metal layers 40, 41, 42, 4 are formed on the coating layer 33 and connected to each region through a window hole.
3, 44, 45 are formed. These metal layers are
Collector electrodes 40, 43, base electrode 4
2, 45 and emitter electrodes 41, 44.

A semiconductor plate 46 constituting a Hall element is placed over the base electrodes 42 and 45, and its output electrode portion is bonded to the electrodes 42 and 45. The input electrode portion of the semiconductor plate 46 is similarly bonded to a metal layer (not shown).

In the case of a semiconductor plate constituting a magnetoresistive element, one end is bonded to the base electrode of one transistor without spanning two transistors. In the case of a three-terminal type element, it can be considered that two magnetoresistive elements are coupled.

Next, a method for manufacturing the magnetoelectric transducer of the present invention will be described.

An insulating coating layer 51 is formed by depositing SiO or SiO ₂ to a thickness of about 1500 Å on the surface of a substrate 50 made of ferrite or semiconductor silicon and having a mirror-polished surface of about 100 to 300 μm. Figure 9A).
Next, a good conductor such as In is deposited on the entire surface of the insulating film layer 51 to form a metal layer 52, and this layer 52 is then used to form a resistor layer to form a predetermined pattern.
For example, etching is performed in the shape of the metal layers 3, 4, 5, and 6 shown in FIG. 1, and then the resist layer is removed (FIG. 9B).

On the other hand, cut the InSb ingot to a thickness of about 0.3 to 0.7 mm, and glue one rough surface with a thermoplastic adhesive such as grease, wax, or pine resin with a melting point of 130°C.
The above material is adhered to a work substrate, polished to a mirror surface by mechanical polishing or chemical polishing, and then heated to obtain a wafer 53 with a thickness of 0.2 to 0.5 mm with one side polished (Fig. 10). . Conventionally known manufacturing methods can be applied to the above manufacturing process.

Next, the mirror surfaces of the wafers 53 are placed opposite each other, and the wafers 53
3 on the metal layer 52 of the substrate 50 and maintain it while applying a weak pressing force. That is, the wafer 53 and the metal layer 52 are aligned as shown in FIG. 1, for example. Thereafter, a laser beam 48 is irradiated from above the wafer 53 using a laser device 49, focused on the metal layer 52, partially melting the metal layer 52, and bonding the wafer 53 to the substrate 50 ( Figure 1).
In the case of FIG. 1, this bonding process includes the metal layer 3,
This is done every 4, 5, 6, or in the case of FIG. 6, every metal layer 21, 22, 23.

The laser device 49 may have an output of about 10 joules, and may be a solid-state laser such as a ruby laser device (oscillation wavelength of about 0.7 μm) or a gas laser device such as N _2
-Co2 gas laser equipment (oscillation wavelength approximately 10.6μm) can be used. When the laser beam is focused on the metal layer 52, the In is heated to 400 to 500° C., melts, and adheres to the wafer 53, thereby bonding the wafer 52 and the substrate 50 with the insulating coating layer 51 interposed therebetween. Therefore,
The laser beam does not affect the wafer 53, the substrate 50, or even the insulating coating layer 51.

Next, the other rough surface of the wafer 53 is polished to a mirror-like surface by mechanical or chemical means to a thickness of 50 to 100 μm. A resist layer having a predetermined pattern is formed on the surface of the wafer 53, and the resist layer is removed by etching. A conventional etching solution may be used.
In this way, a semiconductor plate having a predetermined shape is obtained on the substrate 50, the electrode portion being bonded to the metal layer 52.

Other manufacturing processes can be used to achieve a final thickness of wafer 53 of 50-100 μm.
That is, the wafer 53 in FIG. 10, which has been polished on one side, is
The polished surface is fixed to the work substrate with the thermoplastic adhesive described above, and polished through mechanical polishing and chemical polishing as described above, and then heated and peeled to a thickness of 50 ~
Obtain a 100 μm double-sided polished wafer.

This wafer is placed on a predetermined position on the substrate 50 while being held by a jig (not shown), and a laser beam is emitted while applying a slight pressing force as described above to bond the wafer. Thereafter, the wafer is etched to obtain a desired semiconductor plate.

When using the InSb vapor deposition technique, as described in FIG. 5, InSb is vapor deposited on the second substrate through which the laser beam passes, thereby forming a semiconductor layer having a predetermined shape. After that, the electrode part of the semiconductor layer is shown in FIG. 9B.
, and the metal layer 52 is partially melted and bonded using a laser beam.
Therefore, the semiconductor layer is held between the substrate 50 and the second substrate.

If the final thickness of the wafer 53 is to be as thin as about 5 to 10 μm, as shown in FIG.
Therefore, the above manufacturing process alone is incomplete. In such a case, the following step is added.

That is, after forming the metal layer 52 in FIG. 9B, the same oxide as the insulating coating layer 52 is deposited on the entire surface to form the second insulating coating layer 54. The thickness of this coating layer 54 is approximately the same as that of the metal layer 52, or is formed to be slightly thinner (FIG. 12A).

Next, a resist layer is formed on the second coating layer 54 using a conventional technique, and an etching process is performed so that the coating layer 54 remains only in the areas where the metal layer 52 is not present.Then, the resist layer is removed (FIG. 12). B). In this case, the resist layer is formed so that a groove 55 is formed at the boundary between the metal layer 52 and the coating layer 54. This slot 55 absorbs the spreading pressure of the melt when the metal layer 52 is melted with a laser beam.

As another example, as shown in FIG.
First, a semiconductor silicon substrate is used, and this substrate 56 is
A resist layer is formed on the surface and etched to form protrusions 57 (FIG. 13A). This protrusion 5
7 is an air gap 14 if explained using the example of the configuration shown in FIG.
The height is approximately the same as or slightly lower than the thickness of the metal layers 3 and 6. Next, an insulating film layer 58 is formed by vapor deposition on the surface of the substrate 56 (FIG. 13B), and a metal layer 58 is further formed on the surface of the substrate 56 (FIG. 13B).
9 is deposited (FIG. 13C). Next, metal layer 59
A resist layer with a predetermined pattern is formed on the substrate, etched, and then the resist layer is removed (FIG. 13D). In this case, the coating layer 6 at the protrusion 57 portion
It is desirable that a groove hole 61 be formed at the boundary between the metal layer 59 and the metal layer 59 as in FIG.

Since a conventional manufacturing method can be applied to construct a semiconductor device on a substrate, a description thereof will be omitted.

It goes without saying that the above manufacturing process can also be applied to manufacturing a magnetoresistive element having a large number of striped metal layers for short-circuiting electrodes.

Further, in the above manufacturing process, the case where the metal layer is entirely formed on the substrate side has been described, but a step of forming the metal layer on the electrode portion of the semiconductor plate or the vapor-deposited semiconductor layer can be added. That is, a metal layer is deposited on the entire surface of a semiconductor plate or a deposited semiconductor layer, a resist layer is formed on the electrode part and then etched, and then the resist layer is removed and a metal layer is formed on the electrode part. do. After that, this metal layer and the metal layer on the substrate are brought into contact with each other in a predetermined manner,
A semiconductor plate or a vapor-deposited semiconductor layer is placed on the substrate and fused and bonded with a laser beam. Adding this step facilitates the bonding work because bonding is performed by melting and mixing both metal layers. When this step is added, the thickness of the second coating layer 54 shown in FIG. 12 is formed to be slightly thinner than the sum of the thicknesses of the two metal layers described above. Further, the height of the protrusion 57 shown in FIG. 13 is also formed in the same manner as described above.

As mentioned above, since the present invention forms an insulating coating layer on a substrate and forms a metal layer serving as an electrode on it, it can be used as a substrate regardless of whether the material of the substrate is conductive or not. Also, since no adhesive is used to bond the substrate and semiconductor components, even if the temperature of the atmosphere around the location where the semiconductor device is installed increases, the piezoelectric effect will not affect the semiconductor due to the difference in thermal expansion coefficient. Therefore, the error voltage is significantly reduced, which has a great effect on precision measurement.

In addition, when configured as a magnetoelectric conversion device,
The overall thickness is also thinner than before, so it can be inserted into a narrower magnetic path gap, reducing magnetic reluctance, increasing concentration of magnetic flux, and achieving high magnetoelectric conversion efficiency, so it can be used in magnetic sensors, magnetic heads, etc. It is highly effective when used in devices that utilize minute output such as.

Furthermore, in the past, when a wafer was fixed to a substrate with an adhesive and then polished, the thickness of the adhesive layer was not uniform, resulting in an uneven thickness of the semiconductor plate, which caused unbalanced voltage generation. Since the metal layer is deposited to a uniform thickness, the semiconductor plate formed after bonding the wafer to the substrate has a uniform thickness throughout. This also improves the yield in mass production because even when a large number of semiconductor plates are obtained from a large wafer, the semiconductor plates can be uniformly of the same thickness.

Furthermore, since there is no physical strain on the semiconductor plate, even if an unbalanced voltage occurs, the characteristics can be easily corrected electrically using a circuit.

In the above embodiments, an example of a magnetoelectric conversion device has been described, but it goes without saying that the present invention can be applied to other bulk type semiconductor devices such as a photoelectric conversion element.

[Brief explanation of drawings]

FIG. 1 is a plan view showing an example of the semiconductor device of the present invention, FIG. 2 is a sectional view taken along the dashed line - in FIG. 1, and FIGS. 6 is a plan view of the device of the present invention configured as a magnetoresistive device; FIG. 7 is a sectional view taken along the broken line in FIG. 6; FIG.
The figure is a sectional view of the device of the present invention using a substrate constituting the semiconductor device, FIGS. 9 to 11 are explanatory diagrams of the manufacturing process of the semiconductor device of the present invention, and FIGS.
FIG. 3 is an explanatory diagram of the manufacturing process of the substrate portion in the present invention. 1, 19, 26, 50, 56 in the figure are substrates,
2, 20, 33, 51, 58 are insulating coating layers, 3,
4, 5, 6, 21, 22, 23, 40, 41, 4
2, 43, 44, 45, 52, 59 are metal layers,
8, 24, 46 are semiconductor plates, 14 is a void,
15 and 54 are second insulating coating layers, 16 and 57 are protrusions, 17 is a second substrate, 18 is a vapor deposited semiconductor layer, 4
9 is a laser device, and 55 and 61 are slot holes.

Claims (1)

[Scope of Claims] 1. A substrate having a quadrilateral surface, an insulating coating layer formed on the surface of the substrate, and a metal layer formed on the insulating coating layer at four corners of the substrate,
A semiconductor device comprising: a semiconductor member having an input electrode portion and an output electrode portion placed on the metal layer and adhesively fixed to the substrate by melting the metal layer. 2. The semiconductor device according to claim 1, wherein the substrate is made of ferrite. 3. The semiconductor device according to claim 1 or 2, wherein the semiconductor member is a member in which a semiconductor is deposited on a second substrate. 4. a substrate having a quadrilateral surface, an insulating coating layer formed on the surface of the substrate, and a metal layer serving as an input electrode formed on the insulating coating layer of the substrate;
A semiconductor characterized in that it is composed of a metal layer that serves as a shorting electrode provided between the metal layers, and a semiconductor member that is placed on these metal layers and adhesively fixed to the substrate by melting the metal layer. Device. 5. A semiconductor substrate in which a semiconductor device is formed by forming an N-type region and a P-type region, an insulating coating layer formed on the surface of the substrate excluding the electrode extraction portion of the region, and the above-mentioned semiconductor substrate including the electrode extraction portion. a well-conducting metal electrode formed on a coating layer; a semiconductor member having an electrode portion bonded to the substrate by melting the electrode;
A semiconductor device comprising: