JP2000012919A - Electromagnetic transfer element and manufacture of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electromagnetic transfer element, wherein at least both front and rear surfaces of an element is covered with resin, with a very small projection area and reduction in thickness being allowed, and the quality of mounting is judged through observation with various optical means with no element destruction. SOLUTION: An electromagnetic transfer element comprises a semiconductor device, provided with a semiconductor thin film 3 sensitive to magnetism and an internal electrode 2 on a substrate 1, a first conductive resin layer 4 is formed on the internal electrode 2, the internal electrode 2 on the semiconductor thin film 3 on a substrate surface, the first conductive resin layer 4, and the rear surface of the substrate 1 are covered with resin layers 5a and 5b, a second conductive layer is formed at a specified point on the resin layers 5a and 5b of the substrate surface, the second conductive layer is electrically connected to the internal electrode 12 and the first conductive layer 4, and the second conductive layer is exposed on the side surface of the electromagnetic transfer element, with the exposed part of the substrate surface becoming an external electrode 6.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoelectric conversion element which is covered with a resin so that it is possible to judge the quality at the time of mounting without destruction of the element, and which is extremely small and in which a semiconductor device portion can be easily formed. And its manufacturing method.

[0002]

2. Description of the Related Art Magnetoelectric transducers are widely used as rotational position detecting sensors, potentiometers and gear sensors for drive motors such as VTRs, floppy disks and CD-ROMs. With the miniaturization of these electronic components, there is an increasing demand for smaller magnetoelectric conversion elements.

[0003] The state of miniaturization will be described by taking, as an example, a Hall element that is most frequently used among magnetoelectric conversion elements. As the smallest Hall element, there is an element manufactured by Asahi Kasei Electronics Co., Ltd., whose outer dimensions include a projected dimension of 2.5 × 1.5 mm including a lead frame which is an external electrode for mounting, and a height of 0 mm. 0.6 mm. This device is characterized by its low height, but the output voltage at the time of constant voltage driving, which is the sensitivity, is relatively high, with a Hall output voltage of 74 mV at the maximum under a magnetic field of 0.05 T and an input voltage of 1 V. The output is small. There is another device manufactured by Asahi Kasei Electronics Co., Ltd. as a small device that has almost the same output under the same conditions, but its external dimensions, including the lead frame, are high with a projected size of 2.1 × 2.1 mm. Is 0.55 mm.

[0004] As a relatively small device having a maximum Hall output exceeding 200 mV, there is still another device manufactured by Asahi Kasei Electronics Corporation. The external dimensions of this element are 2.1 × 2.1
The height is 0.8 mm with a projected size of mm. This element is positioned as an element for increasing the sensitivity of the above-described element having the minimum size, but the height has to be increased to increase the sensitivity. The pellet of a high-sensitivity element generally has a structure in which a semiconductor thin film having a high electron mobility is disposed on a high magnetic permeability substrate, and a substantially rectangular magnetic focusing magnetic chip is mounted thereon. This is because the sensitivity increase rate is determined by the height of the substrate and the magnetic chip. At present, there is no Hall element having a height of 0.6 mm or less and a Hall output of 100 mV or more.

[0005] As a system without a lead frame, a tape carrier system has been proposed. In this method, the electrodes of the semiconductor device are connected to the tape by bumps,
It is a method of mounting on a mounting board or the like. This also limits the thickness by the interposition of the tape thickness. Further, the element itself is not easily covered with the resin.

A capacitor or the like is a so-called chip element, and is mounted on a mounting board by a chip-on-board method, which has just responded to a demand for miniaturization. It would be good if such a concept could be applied to the magnetoelectric conversion element, but if it was not covered with resin, there would necessarily be a problem in reliability.

Japanese Patent Application Laid-Open No. 8-64725 discloses a semiconductor device which solves the above-mentioned disadvantages and achieves thinning, and a method of manufacturing the same. That is, a resin-encapsulated semiconductor device characterized in that bumps or Au balls are formed on electrodes of a semiconductor chip and the bumps or Au balls are exposed on the surface of a mold resin, and a method of manufacturing the same. This method enables thinning for IC cards and memory cards. However, in this method, since the external electrodes are formed only on the flat surface, when mounting the element, it is impossible to judge the quality of the mounting unless the semiconductor device is destroyed. However, it is impossible to apply to a device which is almost automatically mounted on the device.

[0008]

SUMMARY OF THE INVENTION The present invention solves the above-mentioned conventional problems, and at least the front and back surfaces of the element are covered with a resin, thereby enabling an extremely small projected area and thinning.
Further, it is an object of the present invention to provide a magnetoelectric conversion element in which the quality of mounting can be determined by observation by various optical means without destroying the element, and to provide a method for easily manufacturing such an element. Aim.

[0009]

Means for Solving the Problems Current magnetoelectric transducers are:
A semiconductor device consisting essentially of a semiconductor thin film that has internal electrodes and is sensitive to magnetism is fixed to a portion called an island portion of a lead frame, the lead frame and the internal electrode are connected by a thin metal wire, and then a lead covering the semiconductor device is formed. A part including a part of the frame is molded with resin, and is manufactured through processes such as deburring, forming, and electromagnetic inspection. FIGS. 15A and 15B are views showing the outer shape of the above-described high-sensitivity and relatively small element as an example of the element manufactured in this manner. FIG. 15A is a side view and FIG. 15B is a plan view. The height h is 0.8 mm, the width w is 1.25 mm, and the length L and the width W including the lead frame are each 2.1 mm.

As a result of intensive studies, the present inventors have concluded that miniaturization is naturally limited as long as the current lead frame is used. The element is molded, but the dimensions of the mold itself are 1.5 × 1.
Even if the lead frame can be formed to about 5 mm, it is necessary to form the lead frame protruding therefrom for mounting, and the protruding portion is a constraint on miniaturization. In addition, there is a limit to the thickness of the lead frame, and it is necessary to cover the front and back of the lead frame with a mold resin.

The present invention has been devised based on the above conclusions so that the dimensions of the entire magneto-electric conversion element, including the mounting electrodes, are about the same as the mold dimensions.

That is, the magneto-electric conversion element according to the present invention comprises:
In a magnetoelectric transducer having a semiconductor device including a semiconductor thin film sensitive to magnetism and an internal electrode on an insulating substrate, the internal electrode is made of metal, and a first conductive resin layer is formed on the internal electrode. And a predetermined portion on the resin layer on the substrate surface, wherein the semiconductor thin film on the substrate surface, the internal electrodes and the first conductive resin layer and the back surface of the substrate are covered with a resin layer. A second conductive resin layer is formed, the second conductive resin layer is electrically connected to the internal electrode and the first conductive resin layer, and the second conductive resin layer is The magneto-electric conversion element is exposed on the side surface of the magneto-electric conversion element.

Here, the insulating substrate may be a high-permeability magnetic material, and the magnetically sensitive portion of the semiconductor thin film sensitive to the magnetism may be sandwiched by the high-permeability magnetic material. A metal layer can be further provided on the second conductive resin layer.

In the method of manufacturing a magneto-electric transducer according to the present invention, a plurality of internal electrodes are formed in a pattern of the final magneto-electric transducer on a semiconductor thin film sensitive to magnetism formed on a surface of an insulating substrate. A step of forming a large number of semiconductor devices at once, a step of forming a first conductive resin layer over an internal electrode of an adjacent semiconductor device in the internal electrode portion, and a step of forming a resin layer on a back surface of the insulating substrate. A step of forming, a step of forming a resin layer so as to cover the semiconductor device, the internal electrode and the first conductive resin layer, a notch until the resin layer on the back surface of the substrate is visible on the substrate so as to separate each semiconductor device. Forming a second conductive resin layer in a predetermined region of the resin layer on the surface of the substrate and the notch under the predetermined region, and half of the resin layer on the back surface of the substrate along the notch. A method for producing a magnetoelectric transducer, characterized by comprising the step of individualizing the plurality of magnetoelectric conversion element body device individually cut.

Here, the method may further include a step of further forming a metal layer on the second conductive resin layer on the surface of the substrate.

By adopting such a structure, for example, a relatively low-sensitivity element as described above is used, for example, 0.9 × 0.9 mm.
An extremely small magnetoelectric conversion element having a projection size of 0.17 mm and a height of 0.17 mm, and a high sensitivity element having the same projection size and a height of 0.3 mm, can be realized by a simple method.

The semiconductor thin film sensitive to magnetism, which constitutes the semiconductor device in the magnetoelectric conversion element of the present invention, is a compound semiconductor such as indium antimony, gallium arsenide, indium arsenide or a ternary of (indium, gallium)-(antimony, arsenic). It can be selected from a system or a quaternary compound semiconductor thin film. A so-called quantum effect element can also be used. These compound semiconductor thin films are formed on various substrates. As the substrate, a compound semiconductor substrate such as silicon or gallium arsenide, a glass substrate such as quartz, or an inorganic substrate such as sapphire can be used.

A semiconductor device having higher sensitivity is a magnetic material having a high magnetic permeability, a semiconductor thin film having a patterned magnetically sensitive portion and an electrode portion formed thereon, and further having a substantially rectangular parallelepiped for magnetic focusing mounted thereon. It has a sandwich structure composed of magnetic chips. For example, Japanese Patent Publication No. 51-4523
Patent Document 4 discloses a method for making a semiconductor thin film having high mobility into a device having this structure. That is, after forming a compound semiconductor thin film on a crystalline substrate such as mica and subjecting it to a desired patterning, the semiconductor thin film is bonded to a high-permeability magnetic material using an adhesive such as an epoxy resin, and then the crystal is formed. This is a method of forming a semiconductor device having the above-mentioned laminated structure by removing a conductive substrate and then mounting a magnetic material for magnetic focusing on a magnetically sensitive portion of a semiconductor thin film. Such a semiconductor device is suitable for producing the small and highly sensitive magnetoelectric conversion element of the present invention. At this time, as a material of the high-permeability ferromagnetic substrate and the magnetic focusing chip, a high-permeability ferrite such as permalloy, an iron-silicon alloy, and MnZn ferrite, or another high-permeability material can be used. Among them, ferrite having high magnetic permeability can be preferably used because of its ease of cutting and low price.

In the above method, when the magnetic sensing portion and the electrode portion are patterned by the gold wire bonding method, which is a conventional assembling method, at least three times of applying, drying, patterning, and removing the photosensitive resist. It is necessary to go through the process, and it is a current bottleneck in productivity.
According to the present invention, the structure is connected to the external electrodes by the conductive resin, so that the number of steps can be significantly reduced. Of course, this technique can also be applied to the high-sensitivity structure described above.

[0020]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Generally, a large number of semiconductor devices are simultaneously formed on a wafer through a multistage process. At this time, in order to be used as a magnetoelectric conversion element, four internal electrodes are generally formed collectively for one element.
It is a point of the present invention that the internal electrode can be directly connected to the external electrode without interposing a thin metal wire such as gold. Such a wafer is prepared, and a plurality of internal electrodes of a plurality of semiconductor devices on the wafer are formed.
As a material of the internal electrode, a metal such as Al, Cu, or Pd is applied. As a forming method, plating, vapor deposition, or the like can be applied. Another point of the present invention is to make the pattern of the internal electrode into a pattern for directly connecting to the external electrode. For that purpose, a first conductive resin layer is formed on a metal electrode. For example, a form in which a conductive resin is printed on a wafer by printing, or a form in which a conductive resin layer is provided by using a so-called lift-off method, may be used. In that case, it is a more preferable form to form so as to straddle the internal electrode of the adjacent element. The etching step for patterning the magneto-sensitive portion is performed before or after the electrode formation. A conductive resin is formed on such internal electrodes to a thickness of 0.02 mm or more. If the thickness is less than 0.02 mm, the following problem occurs. That is, after the element is completed, when the element is mounted on a substrate, the electrode portions are connected by solder. However, when the solder is melted, the conductive object may be eroded by the solder, leading to disconnection. In addition, since the resin formed on the surface magnetic sensing portion side described later becomes thinner, the reliability against the temperature and humidity stress is reduced. Therefore, the thickness of the conductive object is preferably 0.02 mm or more for practical use.

Next, a step of forming an insulating resin layer on the back surface of the substrate is continued. Examples of resins that can be used at this time include thermosetting resins such as epoxy resins, polyimide resins, and imide-modified epoxy resins, phenoxy resins, polyamide resins, polybenzimidazole resins, polystyrene, polysulfonic acid resins, polyurethane resins, polyvinyl acetal, and polyacetal. Thermoplastic resins such as vinyl acetate and its alloy resin can be mentioned. At this time, this step can be performed by coating with a coater such as a spin coater or molding such as transfer molding. Alternatively, this step can also be performed by thermocompression bonding a film provided with these resins in a laminate. Next, a step of covering the semiconductor device and the conductive resin with an insulating resin is continued. The resin that can be used at this time is the same as the resin for the back surface of the substrate described above, and the method of covering with the resin can be performed by the same method as the application process of the back surface. Subsequent to this, a slight polishing step can be applied. In this case, the conductive resin is partially exposed.

Next, a step of making cuts until the resin on the back surface of the substrate is visible so as to separate the respective semiconductor devices is continued. This step is conveniently performed by dicing.

Next, a step of forming a second conductive resin layer in the resin layer portion on the substrate surface side and the cut portion below the resin layer portion is continued. For forming the second conductive resin layer, a potting method or the like can be used, but it is preferable to use a screen printing method. Through this step, the internal electrodes and the external electrodes are electrically connected.

By the next cutting by dicing or the like, individual magneto-electric conversion elements are obtained.

When the second conductive resin layer is formed, the paste may flow along the groove and conduct with the adjacent electrode depending on the viscosity of the paste. In that case, it is necessary to remove a part of the conductive resin on the outer side surface of a part of the individual element.

As described above, in the case of the magnetoelectric conversion element of the present invention, the quality of mounting the element on a substrate or the like is determined by observing from the upper surface by optical means, for example, soldering to the side surface. By observing the wetting of the device, it becomes possible without destroying the device.

The present invention can be modified in various ways, and it goes without saying that steps which do not matter before or after each of the steps described above are also possible. Furthermore, when a thinner magnetoelectric conversion element is required,
It is also possible to add a step of polishing and thinning the back surface of the substrate at some stage.

Further, depending on the type of the conductive resin, another metal layer such as gold or solder can be further provided so that the mounting on an external substrate or the like becomes more successful. At this time, it is preferable to use electroless plating or dipping into a solder bath. The present invention is characterized in that the whole wafer is made into a device as a whole.

[0029]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to the drawings, but the present invention is not limited to these embodiments.

(Embodiment 1) FIG. 1 shows a schematic sectional view of a first embodiment of a small-sized magnetoelectric transducer according to the present invention. Reference numeral 1 denotes a high-permeability ferrite substrate having a glass layer formed on its surface, 2 denotes an internal electrode of a semiconductor device and is made of metal,
Is a sensing part (magnetic sensing part) of the semiconductor device, and 4 is a first conductive resin layer formed on the internal electrode 2 and constitutes an internal electrode together with the metal electrode 2 and is connected to an external electrode described later. Play a role in helping. 5a is a mold resin on the back surface of the substrate, 5b
Is a mold resin on the surface of the substrate formed so as to cover the sensing part 3, the metal electrode 2 and the first conductive resin layer 4, and 6 is a second conductive resin layer for external connection. .

Steps for producing the magnetoelectric conversion element shown in FIG. 1 will be described with reference to FIGS. FIG. 2A shows a state in which a large number of semiconductor patterns are formed on the ferrite substrate 1, and FIG.
FIG. 4 is a partially enlarged view showing a shape of a sensing unit 3. Such a wafer was prepared through the following steps. Diameter 4
A Corning 7059 glass layer was formed on an inch (10.2 cm) ferrite substrate having a thickness of 0.20 mm, and an electron mobility of 24,000 cm ² / V / se was formed thereon.
An InSb thin film of c was formed, and a Hall element pattern was formed by photolithography. The length of the sensing part 3 was 350 μm and the width was 170 μm. The size of one pellet was 0.8 mm square. Patterning for internal electrodes was performed, and internal electrodes 2 were formed at four corners of each semiconductor device by electroless Cu plating.

A thermosetting epoxy resin was applied to the back surface of the ferrite and dried. Next, the first conductive resin layer 4 having a thickness of 50 μm was provided on the internal electrode portion by screen printing over the internal electrode portion of the adjacent semiconductor device. The conductive resin used at this time was LS manufactured by Asahi Chemical Laboratory Co., Ltd.
-005P. FIG. 3A is a cross-sectional view of this state.
FIG. 3B shows a top view.

Next, the semiconductor device and the metal electrode 2 and the first
FIG. 4 is a cross-sectional view showing a state in which the thermosetting epoxy resin 5b is potted and cured to a thickness enough to cover the conductive resin layer 4 of FIG.

Next, FIG. 5 shows a state in which a cut 7 is made until the resin 5a on the back surface of the substrate is visible so as to separate each semiconductor device. FIG. 5A is a top view, and FIG. 5B is a cross-sectional view. The width of the cut was 0.2 mm.

Next, a second conductive resin layer 6 was formed at a predetermined position of the resin 5b on the substrate surface by screen printing. The second conductive resin layer is also formed in the lower cut portion. The second conductive resin layer 6 is in contact with the metal electrode 2 and the exposed end face of the first conductive resin layer 4 in the cut portion 7 to conduct. Then, a portion of the second conductive resin layer 6 on the resin layer 5b becomes an external electrode. At this time, the second conductive resin is not connected to another internal electrode of the same semiconductor device inside the cut portion. Second conductive resin layer 6
The same material as the first conductive resin layer 4 was used.
This state is shown in FIG. FIG. 6A is a top view, and FIG.
(B) is a sectional view.

Finally, along the arrows shown in FIGS. 7 (A) and 7 (B), individual magnetoelectric transducers were separated by a dicing saw using a blade having a width of 0.05 mm. The magnetoelectric conversion element obtained in this way is shown in FIG.
The dimensions of the Hall element of this example were 0.9 × 0.9 mm square, and the thickness was 0.30 mm.

(Embodiment 2) As a second embodiment of the present invention, FIG. 8 shows a schematic sectional view of a high-sensitivity magnetoelectric transducer covered with a resin. Reference numeral 11 denotes a high-permeability ferrite substrate, 12 denotes an internal electrode of a semiconductor device made of metal, 13 denotes a sensing portion of the semiconductor device, and 14 denotes a first conductive resin layer formed on the internal electrode. Together with an internal electrode, and play a role in assisting connection with an external electrode described later. 1
5a is the mold resin on the back surface of the substrate, 15b is the sensing portion 13,
A mold resin 16 on the surface of the substrate formed to cover the metal electrode 12 and the first conductive resin layer 14, and a second conductive resin layer 16 for external connection, hereinafter referred to as an external electrode. Reference numeral 18 denotes a magnetic focusing chip.

The steps for producing the magnetoelectric conversion element shown in FIG. 8 will be described with reference to FIGS. FIG. 9A shows a state in which patterns of a large number of semiconductor devices are formed on the ferrite substrate 11, and FIG. 9B shows a portion showing the shapes of the internal metal electrode 12 and the sensing portion 13. It is an enlarged view. Such a wafer was prepared through the following steps. The following method was used to form a Hall element pattern of a semiconductor thin film on a high-permeability ferrite. First, the cleaved mica was used as a deposition substrate,
Excessive InSb thin film is formed by vapor deposition, and then InSb having a mobility of 45,000 cm ² / V / sec is formed by a method of excessively vapor-depositing Sb, which forms a compound with excess In.
A thin film was formed. Next, a high permeability ferrite made of MnZn ferrite having a thickness of 50 mm square and a thickness of 0.3 mm was prepared, and a polyimide resin was dropped on the InSb thin film,
Place high permeability ferrite on top of it and place weight
It was left at 0 ° C. for 12 hours. Next, the temperature was returned to room temperature, the mica was stripped, and a structure in which an InSb thin film was supported on ferrite having high magnetic permeability was formed. Next, on this InSb thin film,
A large number of Hall element patterns were simultaneously formed by photolithography. The length of each sensing part 13 is 3
50 μm and width 170 μm. Form a copper layer by electroless plating as wiring to the sensing part layer and internal electrodes,
Next, a first conductive resin layer 14 was formed on the internal electrode portion by screen printing so as to straddle the internal electrode portion of an adjacent semiconductor device. The conductive resin used at this time was
It was LS-005P manufactured by Asahi Chemical Laboratory. The size of one pellet (the size of a high magnetic permeability ferrite carrying one Hall element pattern and four internal electrodes) was 0.8 mm square.

Next, according to the method described in JP-B-7-13987, the thickness is 0.1 mm and the length of one side is 3 mm.
A rectangular parallelepiped high magnetic permeability ferrite chip 18 of 50 μm was mounted on the sensing portion 13 of the semiconductor thin film with a silicone resin as an adhesive. FIG. 10 shows a top view of this state.

Next, the back surface of the ferrite substrate 11 was polished until the thickness of the substrate became 0.15 mm.

A thermosetting epoxy resin 15a was applied to the back surface of the ferrite and dried. Next, FIG. 11 is a cross-sectional view showing a state where the thermosetting epoxy resin 15b is potted and cured to a thickness enough to cover the semiconductor device, the metal electrode 12, and the first conductive resin layer 14.

Next, FIG. 12 shows a state in which the notch 17 is formed until the resin 15a on the back surface of the substrate is visible so as to separate the semiconductor devices. FIG. 12A is a top view and FIG.
(B) is a sectional view. The width of the cut was 0.2 mm.

Next, a second conductive resin layer 16 was formed at a predetermined position of the resin 15b on the substrate surface by screen printing. The second conductive resin layer is also formed in the lower cut portion. The second conductive resin layer 16 has the cut portion 1
In 7, the metal electrode 12 and the exposed end face of the first conductive resin layer 14 come into contact with each other and become conductive. Then, the portion of the second conductive resin layer 16 on the resin layer 15b becomes an external electrode. At this time, the second conductive resin layer is not connected to another internal electrode of the same semiconductor device in the cut portion. As the second conductive resin layer 16, the same one as the first conductive resin layer 14 was used. This state is shown in FIG. FIG.
13A is a top view, and FIG. 13B is a cross-sectional view.

Finally, along the arrows shown in FIGS. 14 (A) and 14 (B), individual magneto-electric conversion elements were separated by a dicing saw using a blade having a width of 0.05 mm. The magnetoelectric conversion element thus obtained is shown in FIG. The dimensions of the Hall element of this embodiment are 0.9 × 0.9 m
It was m square and the thickness was 0.25 mm. The sensitivity is also 1V,
It was as high as 200 mV under the condition of 0.05T.

In the above embodiments, the Hall element has been described as an example. However, the concept and the manufacturing method of the present invention can be applied to other magneto-electric conversion elements such as semiconductor MR, ferromagnetic substance MR, and GMR. Is,

[0046]

As described above, according to the present invention,
A semiconductor thin film sensitive to magnetism and an internal electrode are provided on the substrate, a first conductive resin layer is formed on the internal electrode, and a second conductive resin layer is formed to be in electrical contact with the first conductive resin layer.
Conductive resin layer is exposed on the surface and side surfaces of the element,
Since the exposed portion of the substrate surface is used as an external electrode, it is possible to determine the quality of the mounting at the time of mounting without breaking the element, and it is possible to obtain a very small magnetoelectric conversion element.

Further, according to the manufacturing method of the present invention, an external electrode can be formed collectively on a large number of semiconductor devices on a substrate, and an internal pattern can be formed by an extremely simple operation. Thus, a magnetoelectric conversion element can be manufactured.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of one embodiment of a magnetoelectric conversion element according to the present invention.

FIG. 2 is a process diagram of the manufacturing method of the embodiment shown in FIG. 1, showing a state in which a large number of internal electrodes and sensing parts are formed on a ferrite substrate.

FIG. 3 is a process diagram of the manufacturing method of the embodiment shown in FIG. 1, showing a state in which a first conductive resin layer is formed on an internal electrode and a thermosetting resin layer is formed on the back surface of the substrate. FIG.

FIG. 4 is a process diagram of the manufacturing method of the embodiment shown in FIG. 1, showing a state where the surface of the semiconductor device is covered with a resin layer.

5 is a process diagram of the manufacturing method of the embodiment shown in FIG. 1, showing a state in which the semiconductor device is separated and a cut is made until a resin layer on the back surface of the substrate is visible.

FIG. 6 is a process diagram of the manufacturing method of the embodiment shown in FIG. 1, showing a state in which a second conductive resin layer is formed at a predetermined position and a cut portion of the resin layer on the substrate surface side.

FIG. 7 is a diagram showing a state in which a wafer is cut into individual magneto-electric conversion elements.

FIG. 8 is a schematic sectional view of one embodiment of a magnetoelectric conversion element according to the present invention.

FIG. 9 is a process diagram of the manufacturing method of the embodiment shown in FIG. 8, showing a state in which a large number of internal electrodes and sensing parts are formed on a ferrite substrate.

FIG. 10 is a process chart of the manufacturing method of the embodiment shown in FIG. 8, showing a state in which a large number of internal electrodes and sensing parts are formed on a ferrite substrate.

FIG. 11 is a process diagram of the manufacturing method of the embodiment shown in FIG. 8, showing a state in which a thermosetting resin layer on the back surface of the substrate is formed and a first conductive resin layer is formed on the internal electrodes. FIG.

FIG. 12 is a process diagram of the manufacturing method of the embodiment shown in FIG. 8, showing a state in which the semiconductor device is separated and a cut is made until a resin layer on the back surface of the substrate is visible.

FIG. 13 is a process diagram of the manufacturing method of the example shown in FIG. 8, showing a state where a second conductive resin layer is formed at a predetermined position and a cut portion of the resin layer on the substrate surface side.

FIG. 14 is a diagram showing a state in which a wafer is cut into individual magnetoelectric conversion elements.

FIG. 15 is a sectional view of a conventional magnetoelectric conversion element.

[Description of Signs] 1 Ferrite substrate 2 Internal electrode 3 Sensing part (semiconductor thin film) 4 First conductive resin layer 5a, 5b resin layer 6 Second conductive resin layer (external electrode) 7 Cut 11 Ferrite substrate 12 Internal electrode 13 Sensing part (semiconductor thin film) 14 First conductive resin layer 15a, 15b resin layer 16 Second conductive resin layer (external electrode) 17 Notch 18 Magnetic focusing chip

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hideki Araki 6-4100 Asahimachi, Nobeoka City, Miyazaki Prefecture Inside Asahi Kasei Electronics Co., Ltd. (72) Inventor Yuki Matsui 1-1-1, Uchisaiwaicho, Chiyoda-ku, Tokyo Asahi Kasei Electronics Co., Ltd. (72) Inventor Kaoru Kuraki 6-4100 Asahicho, Nobeoka-shi, Miyazaki Prefecture Asahi Kasei Electronics Co., Ltd.

Claims (5)

[Claims] 1. A magnetoelectric transducer having a semiconductor device having a semiconductor thin film sensitive to magnetism and an internal electrode on an insulating substrate, wherein the internal electrode is made of a metal, and a first conductive material is provided on the internal electrode. A resin layer is formed on the semiconductor thin film on the substrate surface, on the internal electrode, and on the first electrode.
A second conductive resin layer is formed at a predetermined position on the resin layer on the surface of the substrate, and the second conductive resin layer Is electrically connected to the internal electrode and the first conductive resin layer,
And the second conductive resin layer is exposed on a side surface of the magnetoelectric conversion element. 2. The magnetic recording medium according to claim 1, wherein the insulating substrate is a high-permeability magnetic material, and a magnetic-sensitive portion of the semiconductor thin film that is sensitive to the magnetism is sandwiched by the high-permeability magnetic material. Magnetoelectric conversion element. 3. The magnetoelectric conversion element according to claim 1, further comprising a metal layer on the second conductive resin layer on the surface of the substrate. 4. A plurality of internal electrodes are formed in a pattern of a final magneto-electric conversion element on a magnetically sensitive semiconductor thin film formed on a surface of an insulating substrate, and a plurality of semiconductor devices are collectively formed. Forming a first conductive resin layer over an internal electrode of a semiconductor device adjacent to the internal electrode portion, forming a resin layer on the back surface of the insulating substrate, forming the semiconductor device, the internal electrode, A step of forming a resin layer so as to cover the first conductive resin layer; a step of making a cut in the substrate so that a resin layer on the back surface of the substrate is visible so as to separate each semiconductor device; Forming a second conductive resin layer in the predetermined region and the notch below the predetermined region, and individually cutting the semiconductor device including the resin layer on the back surface of the substrate along the notch to form a plurality of magnetic devices; Conversion element A method for manufacturing a magnetoelectric conversion element, comprising: 5. The method according to claim 4, further comprising a step of forming a metal layer on the second conductive resin layer on the surface of the substrate.