JPH04367289A - Hall element - Google Patents
Hall elementInfo
- Publication number
- JPH04367289A JPH04367289A JP3168976A JP16897691A JPH04367289A JP H04367289 A JPH04367289 A JP H04367289A JP 3168976 A JP3168976 A JP 3168976A JP 16897691 A JP16897691 A JP 16897691A JP H04367289 A JPH04367289 A JP H04367289A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrode
- film
- hall element
- hall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 230000001681 protective effect Effects 0.000 claims abstract description 10
- 230000005355 Hall effect Effects 0.000 claims abstract description 7
- 239000000696 magnetic material Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 238000004806 packaging method and process Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910001035 Soft ferrite Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000006089 photosensitive glass Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、ブラシレスモータのロ
ータ磁極位置等の磁気を検出するために用いられるホー
ル素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a Hall element used for detecting magnetism such as the position of a rotor magnetic pole of a brushless motor.
【0002】0002
【従来の技術】この種のホール素子は、ブラシレスモー
タのロータ磁石の磁極位置を検出するために、ホール素
子を近接させて配置し、磁極の変化をホール素子から検
出信号として出力させるようにしている。図5及び図6
は従来のホール素子Hを示し、フェライト等の磁性体、
或いはセラミック等の非磁性体からなる基板1の表面に
は、絶縁層2を介して中央部にインジュームアンチモン
(InSb)等の感磁層3が蒸着等により形成され、こ
の感磁層3と基板1の表面側四隅に設けた入力または出
力用のボンディング電極4との間を素子電極5によって
接続している。そして、少なくとも上記感磁面3には、
保護膜6が被覆されている。上記ボンディング電極4は
、例えば図示しないリードフレーム等に接続するために
、金等からなるボンディングワイヤー7の一端を各々接
続している。[Prior Art] In order to detect the magnetic pole position of a rotor magnet of a brushless motor, this type of Hall element is arranged in close proximity to each other, and changes in the magnetic pole are outputted from the Hall element as a detection signal. There is. Figures 5 and 6
indicates a conventional Hall element H, which is made of magnetic material such as ferrite,
Alternatively, on the surface of a substrate 1 made of a non-magnetic material such as ceramic, a magnetically sensitive layer 3 made of indium antimony (InSb) or the like is formed in the center via an insulating layer 2 by vapor deposition or the like, and this magnetically sensitive layer 3 and The device electrodes 5 are connected to bonding electrodes 4 for input or output provided at the four corners of the front surface of the substrate 1 . At least on the magnetically sensitive surface 3,
A protective film 6 is coated. Each of the bonding electrodes 4 is connected to one end of a bonding wire 7 made of gold or the like in order to connect to a lead frame (not shown), for example.
【0003】0003
【発明が解決しようとする課題】上記従来のホール素子
をブラシレスモータに用いる場合、近年ブラシレスモー
タは軸方向を短小とした扁平化が進み、ホール素子自体
を扁平化する必要が生じている。しかし、基板の表面に
形成したボンディング電極4にボンディングワイヤー7
の一端を接続し、基板1から離間させるように迂回して
リードフレーム等外部部品に接続するため、高さ寸法が
大きくなり扁平化が困難となる問題点がある。また、感
磁面3と同じ表面にボンディングワイヤー7があるため
、ロータ磁石とのギャップが大きくなり、必然的にホー
ル素子からのホール出力電圧が小さくなる問題点もある
。[Problems to be Solved by the Invention] When using the above-mentioned conventional Hall element in a brushless motor, in recent years brushless motors have become shorter and shorter in the axial direction and have become flattened, and it has become necessary to flatten the Hall element itself. However, the bonding wire 7 is attached to the bonding electrode 4 formed on the surface of the substrate.
Since one end is connected and connected to an external component such as a lead frame through a detour so as to be separated from the substrate 1, there is a problem that the height dimension becomes large and it is difficult to flatten it. Furthermore, since the bonding wire 7 is located on the same surface as the magnetically sensitive surface 3, the gap with the rotor magnet becomes large, which inevitably causes the problem that the Hall output voltage from the Hall element becomes small.
【0004】本発明は、このような問題点を解消するた
めになされたもので、基板の表面にホール効果を有する
磁気検知部の出力を基板に貫通して設けた貫通電極によ
って裏面の電極部に導くようにすることにより、ホール
素子を扁平化すると共に、磁気的な被検知体とのギャッ
プを小さくすることのできるホール素子を提供すること
を目的とする。The present invention was made to solve these problems, and the output of the magnetic sensing section having a Hall effect on the front surface of the substrate is transmitted to the electrode section on the back surface by means of a through electrode provided through the substrate. It is an object of the present invention to provide a Hall element that can flatten the Hall element and reduce the gap with a magnetically detected object by guiding the magnetic field.
【0005】[0005]
【課題を解決するための手段】本発明は、基板を表裏方
向に貫通する透孔を形成し、この透孔内に導電性の貫通
電極を設け、上記基板の表面にはホール効果を有する薄
膜状の感磁膜と、この感磁膜と前記貫通電極とを接続し
た電極パターンと、この電極パターンと前記感磁膜を被
覆する保護膜とを形成し、前記基板の裏面には前記貫通
電極を露出して電極部としたことを特徴とする。[Means for Solving the Problems] The present invention forms a through hole that penetrates a substrate in the front and back directions, provides a conductive through electrode in the through hole, and forms a thin film having a Hall effect on the surface of the substrate. A magnetically sensitive film having a shape, an electrode pattern connecting the magnetically sensitive film and the through electrode, and a protective film covering the electrode pattern and the magnetically sensitive film are formed, and the through electrode is formed on the back surface of the substrate. is characterized in that it is exposed to serve as an electrode part.
【0006】[0006]
【作用】基板の表面に形成したホール効果を有する薄膜
状の感磁膜のホール出力電圧は基板に形成した透孔内の
貫通電極を介して、基板の裏面の電極部に導かれる。基
板の表面には、薄膜状の感磁膜と電極パターン及び保護
膜とが形成されるだけであり、ボンディングワイヤーに
より接続する必要がないため、扁平化が可能になると共
に、被検知体とのギャップを小さくすることができ、大
きなホール出力電圧が得られる。また、基板の裏面に導
かれた電極によりプリント配線基板等に直接実装でき、
実装スペースが小さくなる。[Operation] The Hall output voltage of the thin magnetically sensitive film having the Hall effect formed on the surface of the substrate is guided to the electrode portion on the back surface of the substrate via the through electrode in the through hole formed in the substrate. Only a thin magnetically sensitive film, an electrode pattern, and a protective film are formed on the surface of the substrate, and there is no need for connection with bonding wires, which makes it possible to flatten the substrate and improve the connection with the object to be detected. The gap can be made smaller and a larger Hall output voltage can be obtained. In addition, it can be mounted directly on a printed wiring board etc. using the electrodes guided to the back side of the board.
The mounting space is smaller.
【0007】[0007]
【実施例】以下、図1乃至図4を参照しながら本発明に
かかるホール素子の実施例について説明する。図1にお
いて、基板10は、好ましくは結晶化ガラスからなり、
四隅の近傍に表裏方向に貫通する透孔11が設けられて
いる。この透孔11内には、微粉銅を充填させた導電性
の貫通電極12が設けられ、貫通電極12の上下の端面
は基板10の表裏面と同一面となるように露出させてい
る。基板10の表面には、ホール効果を有する例えばイ
ンジュームアンチモン、インジュームヒ素、或いはガリ
ウムヒ素等からなる薄膜状の感磁膜13が形成され、さ
らに、感磁膜13と貫通電極12とを接続する電極パタ
ーン14を形成し、これら感磁膜13と電極パターン1
4を被覆する保護膜15が形成されている。一方、基板
10の裏面に露出した貫通電極12の端面には電極部1
6を形成し、さらに電極部16の表面には、図示しない
外部の配線基板のパターン等に接続するための半田バン
プ17が形成されている。Embodiments Hereinafter, embodiments of the Hall element according to the present invention will be described with reference to FIGS. 1 to 4. In FIG. 1, the substrate 10 is preferably made of crystallized glass,
A through hole 11 penetrating in the front and back direction is provided near the four corners. A conductive through electrode 12 filled with fine copper powder is provided in the through hole 11, and the upper and lower end surfaces of the through electrode 12 are exposed so as to be flush with the front and back surfaces of the substrate 10. A thin magnetically sensitive film 13 made of, for example, indium antimony, indium arsenic, gallium arsenide, or the like having a Hall effect is formed on the surface of the substrate 10, and further connects the magnetically sensitive film 13 and the through electrode 12. An electrode pattern 14 is formed, and these magnetically sensitive films 13 and electrode pattern 1
A protective film 15 covering 4 is formed. On the other hand, an electrode portion 1 is provided on the end surface of the through electrode 12 exposed on the back surface of the substrate 10.
Further, solder bumps 17 are formed on the surface of the electrode portion 16 for connection to a pattern of an external wiring board (not shown) or the like.
【0008】次に、かかるホール素子の製造方法の一例
を説明する。まず、基板10の四隅の近傍に表裏方向に
貫通させて設けた透孔11に、銅を粉砕して微小の粒子
とした微粉銅を充填し、その後、基板10と同時に所定
の温度にて焼成して図2に示すような貫通電極12を形
成する。このとき、基板10として結晶化ガラスを用い
ると、微粉銅と焼成温度がほぼ同じであり、しかも結晶
化ガラス収縮を起こすために、焼成された微粉銅が透孔
11内で圧縮されて基板10との密着性を高めることが
できる。焼成後の基板10は、貫通電極12が突出して
いる場合があるため、表面が平坦になるように基板10
の表裏面を研磨する。Next, an example of a method for manufacturing such a Hall element will be explained. First, through-holes 11 provided near the four corners of the substrate 10 in the front and back directions are filled with finely powdered copper, which is made by crushing copper into minute particles, and then fired at a predetermined temperature at the same time as the substrate 10. Then, a through electrode 12 as shown in FIG. 2 is formed. At this time, when crystallized glass is used as the substrate 10, the firing temperature is almost the same as that of fine powder copper, and furthermore, in order to cause the crystallized glass to shrink, the fired fine powder copper is compressed in the through hole 11 and the substrate 10 is heated. It is possible to improve the adhesion with. Since the through electrode 12 may protrude from the substrate 10 after firing, the substrate 10 should be shaped so that the surface is flat.
Polish the front and back sides.
【0009】次に、次工程にて形成する感磁膜13や電
極パターン14とのオーミックコンタクト性を良好にす
るため、銅または金等の金属材をスパッタリングによっ
て形成し、その後、4個の電極パターン14を形成する
。さらに、電極パターン14の中央部にインジュームア
ンチモン等の感磁膜13を0.5〜2μmの厚さに蒸着
によって形成しパターニングする。この結果、図3に示
すように感磁膜13と貫通電極12とは電極パターン1
4を介して接続される。その後、感磁膜13と電極パタ
ーン14を保護するために、酸化シリコン(SiO2)
を蒸着またはスパッタリングによって保護膜15を形成
する。さらに、ホール素子の信頼性を高めるために、エ
ポキシ樹脂等の樹脂を10〜30μmの厚さで被覆した
保護被覆部18を設け、耐湿性を向上すると同時に機械
的強度を上げるようにしている。Next, in order to improve the ohmic contact with the magnetically sensitive film 13 and the electrode pattern 14 that will be formed in the next step, a metal material such as copper or gold is formed by sputtering, and then the four electrodes are A pattern 14 is formed. Furthermore, a magnetically sensitive film 13 made of indium antimony or the like is formed by vapor deposition to a thickness of 0.5 to 2 μm at the center of the electrode pattern 14 and patterned. As a result, as shown in FIG.
Connected via 4. After that, silicon oxide (SiO2) was used to protect the magnetically sensitive film 13 and the electrode pattern 14.
A protective film 15 is formed by vapor deposition or sputtering. Further, in order to improve the reliability of the Hall element, a protective coating section 18 made of a resin such as epoxy resin with a thickness of 10 to 30 .mu.m is provided to improve moisture resistance and mechanical strength at the same time.
【0010】一方、基板10の裏面に露出した貫通電極
12の電極部16として、導電性を有する導体ペースト
をスクリーン印刷によって電極パッド16aを形成し、
さらに、電極パッド16aの表面にメッキまたは半田を
印刷し、半田リフローによって半田バンプ17を形成し
て本発明にかかるホール素子が完成する。On the other hand, as the electrode portion 16 of the through electrode 12 exposed on the back surface of the substrate 10, an electrode pad 16a is formed by screen printing a conductive paste having conductivity.
Furthermore, plating or solder is printed on the surface of the electrode pad 16a, and solder bumps 17 are formed by solder reflow, thereby completing the Hall element according to the present invention.
【0011】図4は本発明の変形実施例であり、基板1
0として、感光性ガラスや穴あきセラミックを用い、こ
の基板に導体ペースト19をスルーホール20内に印刷
した後に所定の温度にて焼成したスルーホール基板を用
いたものである。なお、基板10の構成を除いては上述
した図1の構成と同様である。FIG. 4 shows a modified embodiment of the present invention, in which the substrate 1
0, a through-hole substrate was used in which photosensitive glass or perforated ceramic was used, and a conductive paste 19 was printed in the through-holes 20 on this substrate and then fired at a predetermined temperature. Note that the structure is the same as that of FIG. 1 described above except for the structure of the substrate 10.
【0012】本発明は、上記の各実施例に限定されるも
のではなく、貫通電極12は微粉銅の他に、銀・パラジ
ームペースト或いはカッパーペースト等の導電性を有す
るペースト材を透孔11内に充填して焼成するようにし
てもよい。さらに、保護膜は樹脂を用いずとも、酸化シ
リコン等の無機質の膜のみを形成してもよい。また、感
磁膜13に位置する保護膜上にソフトフェライトからな
る磁気増幅チップを載置して検知磁束を感磁膜13に導
かせ、ホール素子自体の感度を高めるようにする等、本
発明の要旨を逸脱しない範囲において種々変形実施可能
である。The present invention is not limited to the above-mentioned embodiments, and the through electrode 12 is made of conductive paste material such as silver/palladium paste or copper paste in addition to finely powdered copper in the through hole 11. Alternatively, the material may be filled inside the container and fired. Further, the protective film may be formed of only an inorganic film such as silicon oxide without using a resin. In addition, the present invention can be implemented, such as by placing a magnetic amplification chip made of soft ferrite on the protective film located on the magnetically sensitive film 13 to guide the detected magnetic flux to the magnetically sensitive film 13 to increase the sensitivity of the Hall element itself. Various modifications can be made without departing from the spirit of the invention.
【0013】[0013]
【発明の効果】以上の説明から明らかなように、本発明
のホール素子は、基板を表裏方向に貫通する透孔内に導
電性の貫通電極を設け、基板の表面には、ホール効果を
有する薄膜状の感磁膜と、電極パターンとを形成し、基
板の裏面には貫通電極を露出させて電極部としているの
で、ボンディングワイヤーにより接続する必要がなく、
小型で扁平なホール素子を得ることができ、かつ、リー
ドフレームやリード線が不要なため安価にできる利点が
ある。また、磁気的な被検知体とのギャップを小さくす
ることができ、大きなホール出力電圧を得ることができ
る。さらに、基板の裏面には電極部が導かれているので
、プリント配線基板等に直接実装できるため実装スペー
スが小さくなる利点もある。Effects of the Invention As is clear from the above description, the Hall element of the present invention has a conductive through electrode in a through hole that penetrates a substrate in the front and back directions, and has a Hall effect on the surface of the substrate. A thin magnetically sensitive film and an electrode pattern are formed, and a through electrode is exposed on the back side of the substrate to serve as the electrode part, so there is no need to connect it with a bonding wire.
It has the advantage of being able to obtain a small and flat Hall element, and also being inexpensive because it does not require a lead frame or lead wire. Furthermore, the gap with the magnetically detected object can be reduced, and a large Hall output voltage can be obtained. Furthermore, since the electrode portion is led to the back surface of the substrate, it can be directly mounted on a printed wiring board or the like, which has the advantage of reducing the mounting space.
【図1】本発明にかかるホール素子の一実施例を示す断
面図である。FIG. 1 is a sectional view showing one embodiment of a Hall element according to the present invention.
【図2】同上ホール素子における基板を示す斜視図であ
る。FIG. 2 is a perspective view showing a substrate in the Hall element as described above.
【図3】同上ホール素子の感磁膜と電極パターンを形成
した状態を示す斜視図である。FIG. 3 is a perspective view showing a state in which a magnetically sensitive film and an electrode pattern of the Hall element are formed.
【図4】本発明にかかる他の実施例を示す斜視図である
。FIG. 4 is a perspective view showing another embodiment according to the present invention.
【図5】従来のホール素子を示す平面図である。FIG. 5 is a plan view showing a conventional Hall element.
【図6】同上ホール素子を示す断面図である。FIG. 6 is a sectional view showing the Hall element shown above.
10 基板 11 透孔 12 貫通電極 13 感磁膜 14 導電パターン 15 保護膜 16 電極部 10 Substrate 11 Through hole 12 Through electrode 13 Magnetically sensitive film 14 Conductive pattern 15 Protective film 16 Electrode part
Claims (1)
し、この透孔内に導電性の貫通電極を設け、上記基板の
表面にはホール効果を有する薄膜状の感磁膜と、この感
磁膜と前記貫通電極とを接続した電極パターンと、この
電極パターンと前記感磁膜を被覆する保護膜とを形成し
、前記基板の裏面には前記貫通電極を露出して電極部と
したことを特徴とするホール素子。1. A through hole passing through the substrate from front to back is formed, a conductive through electrode is provided in the through hole, and a thin magnetically sensitive film having a Hall effect is formed on the surface of the substrate. An electrode pattern connecting the magnetically sensitive film and the through electrode, and a protective film covering the electrode pattern and the magnetically sensitive film are formed, and the through electrode is exposed on the back surface of the substrate to serve as an electrode part. A Hall element characterized by:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3168976A JP2715016B2 (en) | 1991-06-14 | 1991-06-14 | Hall element and method of manufacturing hall element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3168976A JP2715016B2 (en) | 1991-06-14 | 1991-06-14 | Hall element and method of manufacturing hall element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04367289A true JPH04367289A (en) | 1992-12-18 |
JP2715016B2 JP2715016B2 (en) | 1998-02-16 |
Family
ID=15878053
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3168976A Expired - Lifetime JP2715016B2 (en) | 1991-06-14 | 1991-06-14 | Hall element and method of manufacturing hall element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2715016B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013157393A (en) * | 2012-01-27 | 2013-08-15 | Asahi Kasei Electronics Co Ltd | Magnetoelectric transducer |
JP2022520882A (en) * | 2019-03-20 | 2022-04-01 | レム・インターナショナル・エスエイ | Magnetic field sensor |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51127112A (en) * | 1975-04-30 | 1976-11-05 | Fujitsu Ltd | Method of producing multiilayered glass substrate |
JPS58153384A (en) * | 1982-03-05 | 1983-09-12 | Asahi Chem Ind Co Ltd | Magnetoelectricity conversion element and manufacture thereof |
JPS63204663A (en) * | 1987-02-19 | 1988-08-24 | Nec Corp | Manufacture of semiconductor device |
JPH0227757U (en) * | 1988-08-10 | 1990-02-22 |
-
1991
- 1991-06-14 JP JP3168976A patent/JP2715016B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51127112A (en) * | 1975-04-30 | 1976-11-05 | Fujitsu Ltd | Method of producing multiilayered glass substrate |
JPS58153384A (en) * | 1982-03-05 | 1983-09-12 | Asahi Chem Ind Co Ltd | Magnetoelectricity conversion element and manufacture thereof |
JPS63204663A (en) * | 1987-02-19 | 1988-08-24 | Nec Corp | Manufacture of semiconductor device |
JPH0227757U (en) * | 1988-08-10 | 1990-02-22 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013157393A (en) * | 2012-01-27 | 2013-08-15 | Asahi Kasei Electronics Co Ltd | Magnetoelectric transducer |
JP2022520882A (en) * | 2019-03-20 | 2022-04-01 | レム・インターナショナル・エスエイ | Magnetic field sensor |
Also Published As
Publication number | Publication date |
---|---|
JP2715016B2 (en) | 1998-02-16 |
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Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19970930 |