JPH02304560A - Method for producing film mask used for production of hybrid ic - Google Patents

Method for producing film mask used for production of hybrid ic

Info

Publication number
JPH02304560A
JPH02304560A JP1126470A JP12647089A JPH02304560A JP H02304560 A JPH02304560 A JP H02304560A JP 1126470 A JP1126470 A JP 1126470A JP 12647089 A JP12647089 A JP 12647089A JP H02304560 A JPH02304560 A JP H02304560A
Authority
JP
Japan
Prior art keywords
film
pattern data
hybrid
masks
cad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1126470A
Other languages
Japanese (ja)
Inventor
Akito Koike
小池 明人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advantest Corp
Original Assignee
Advantest Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corp filed Critical Advantest Corp
Priority to JP1126470A priority Critical patent/JPH02304560A/en
Publication of JPH02304560A publication Critical patent/JPH02304560A/en
Pending legal-status Critical Current

Links

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  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To perform each of film setting, exposure drawing, film detachment and development only once, and to save an operator trouble by arranging plural pattern data two-dimensionally to subject them to exposure drawing and cutting them to obtain plural film masks. CONSTITUTION:Pattern data of 9 materials of one thick film hybrid IC are prepared with CAD (computer aided design), and these 9 pattern data are converted into pattern data of the whole surface where they are two- dimensionally arranged in three rows and three columns on CAD. This whole surface pattern data is subjected to exposure drawing on the film by a film drawing device, and this film is developed. As the result, one film where patterns 13 are arranged in three rows and three columns is obtained, and the developed film is cut along cutting lines 14 to obtain 9 film masks. Thus, film masks are produced with less trouble.

Description

【発明の詳細な説明】 「産業上の利用分野J この発明はハイブリッ)ICの製造において、各材料ご
とにパターンを基板上に形成するために用いられるフィ
ルムマスクの作成方法に関する。
DETAILED DESCRIPTION OF THE INVENTION INDUSTRIAL APPLICATION J Field of the Invention The present invention relates to a method for creating a film mask used to form a pattern for each material on a substrate in the manufacture of hybrid ICs.

「従来の技術」 厚膜ハイブリットICの製造においてはセラミック基板
上に、配線パターンの形成、各抵抗値ごとの抵抗パター
ンの形成、配線のクロスオーバ個所の絶縁パターンの形
成、表面保護体パターンの形成など各材料ごとにパター
ンを印刷により形成している。その各材料ごとのパター
ン形成のため、白黒のパターンが形成されたフィルムを
マスクとしてマスク材料に対してホトリソグラフィ技術
を用いてパターンを形成している。従って各材料ごとの
パターン形成のためにそれぞれフィルムマスクを必要と
する。一般に1つの厚膜ハイブリットICの製造のため
に5〜15枚程度のフィルムマスクを必要とする。
"Prior art" In manufacturing thick film hybrid ICs, on a ceramic substrate, a wiring pattern is formed, a resistance pattern is formed for each resistance value, an insulating pattern is formed at the crossover point of the wiring, and a surface protector pattern is formed. Patterns are printed for each material. In order to form patterns for each material, a pattern is formed on the mask material using a photolithography technique using a film on which a black and white pattern is formed as a mask. Therefore, film masks are required for pattern formation for each material. Generally, about 5 to 15 film masks are required to manufacture one thick film hybrid IC.

これらのフィルムマスクを作成するため、従来において
は1つのフィルムマスクに対応するパターンデータをキ
ャド(CAD HCoaputer  AidDesi
gn)で作り、そのパターンデータをフィルム作画装置
に入力してフィルムにパターンを光ビームでIf画して
1枚のフィルムマスクを得ていた。
In order to create these film masks, conventionally the pattern data corresponding to one film mask is processed using CAD (CAD HCoaputer AidDesi).
gn), inputting the pattern data into a film drawing device, and drawing the pattern on the film with a light beam to obtain one film mask.

これを各フィルムマスクについて行っていた。一般にキ
ャドやフィルム作画装置は大きな面積のプリント基板の
設計に使用できるように構成されているため、第2図に
示すように例えば480 X 480鮒2のフィルム1
1の1隅に150X150 m”のフィルムマスク12
を形成し、これを必要なフィルムマスク数だけ作ってい
た。
This was done for each film mask. In general, CAD and film drawing devices are configured so that they can be used for designing large-area printed circuit boards.
150 x 150 m” film mask 12 in one corner of 1
, and then made as many film masks as needed.

「発明が解決しようとする課題」 以上述べたように従来においては各材料ごとのパターン
について1枚のフィルムにパターンデータしているため
、必要とするフィルムマスクの数だけ、フィルム作画装
置に対するフィルムのセット、そのフィルムに対する描
画露光、その後そのフィルムの取外し、そのフィルムの
現像を行わなければならず、多くの手数を要した。
``Problems to be Solved by the Invention'' As stated above, in the past, pattern data for each material is stored on one film, so the number of film masks required for the film drawing device is It was necessary to set the film, expose the film, then remove the film, and develop the film, which required a lot of effort.

この発明の目的は従来よりも少ない手数でフィルムマス
クを作成できるハイブリットICの製造に用いるフィル
ムマスクの作成方法を提供することにある。
An object of the present invention is to provide a method for creating a film mask for use in manufacturing a hybrid IC, which allows film masks to be created with fewer steps than conventional methods.

「課題を解決するための手段」 この発明によれば1つのハイブリットICの各材料ごと
のパターンデータをキャドでそれぞれ作成し、これら複
数のパターンデータをキャド上で一面に配列されたパタ
ーンデータとし、その配列された一面のパターンデータ
をフィルム作画装置で一枚のフィルムに描画し、その描
画されたフィルムを各材料のパターンごとに切断してフ
ィルムマスクとする。
"Means for Solving the Problem" According to the present invention, pattern data for each material of one hybrid IC is created using CAD, and these plurality of pattern data are arranged as pattern data on one surface on CAD, The arranged pattern data for one surface is drawn on a sheet of film using a film drawing device, and the drawn film is cut into patterns for each material to form a film mask.

「実施例J 1つの厚膜ハイブリットICの例えば9つの材料ごとの
パターンデータをキャドでそれぞれ作成し、これら9つ
のパターンデータをキャド上で3列3行の2次元に配列
された一面のパターンデータに変換する。この−面のパ
ターンデータをフィルム作画装置で一枚のフィルムに露
光描画し、その露光描画されたフィルムを現像する。こ
の結果第1図に示すように例えば480 x 480■
2のフィルムに150x150 fill”のパターン
13が3列3行に配列されたものが得られる。なお露光
描画の際に各パターン13の境界を示す切断線14も同
時に描画しておく、現像したフィルムを切断線14に沿
って切断して9枚のフィルムマスクを得る。
"Example J: Create pattern data for each of, for example, nine materials of one thick film hybrid IC using CAD, and convert these nine pattern data into one-sided pattern data arranged two-dimensionally in 3 columns and 3 rows on CAD. The pattern data of this - side is exposed and drawn on a piece of film using a film drawing device, and the exposed and drawn film is developed.As a result, as shown in Fig. 1, for example, 480 x 480 mm.
A film with 150 x 150 fill" patterns 13 arranged in 3 columns and 3 rows is obtained on the film of 2. In addition, cutting lines 14 indicating the boundaries of each pattern 13 are also drawn at the same time during exposure drawing. is cut along cutting line 14 to obtain nine film masks.

「発明の効果」 以上述べたようにこの発明によれば一枚のフィルムに対
して複数のパターンデータを2次元に配列して露光描画
し、そのフィルムを切断して複数のフィルムマスクを得
るものであるから、フィルムのセット、露光描画、フィ
ルムの取外し、現像がそれぞれ1回で済み、これらを各
フィルムマスクごとに行っている従来の方法と比較して
手数が少くて済む0例えば従来の方法よりもフィルム作
成工期が約1/2になり、費用が約1/3になった。
"Effects of the Invention" As described above, according to the present invention, a plurality of pattern data are arranged two-dimensionally on a single film, exposed and drawn, and the film is cut to obtain a plurality of film masks. Therefore, setting the film, exposing the image, removing the film, and developing the film only need to be done once each, which is less time-consuming compared to the conventional method in which these steps are performed for each film mask.For example, the conventional method The film production time has been reduced to about 1/2, and the cost has been reduced to about 1/3.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明方法により得られる複数のパターンが
形成されたフィルムを示す図、第2図は従来法により得
られるフィルムマスクを示す図である。
FIG. 1 is a diagram showing a film with a plurality of patterns formed thereon obtained by the method of the present invention, and FIG. 2 is a diagram showing a film mask obtained by the conventional method.

Claims (1)

【特許請求の範囲】[Claims] (1)1つのハイブリットICの各材料ごとのパターン
データをキャドでそれぞれ作成し、 これら複数のパターンデータをキャド上で一面に配列さ
れたパターンデータとし、 その配列された一面のパターンデータをフィルム作画装
置で一枚のフィルムに描画し、 その描画されたフィルムを各材料のパターンごとに切断
してフィルムマスクを得る ハイブリットICの製造に用いるフィルムマスクの作成
方法。
(1) Create pattern data for each material of one hybrid IC on CAD, make these multiple pattern data arranged on one side on CAD, and use the arranged pattern data on one side to create a film. A method for creating a film mask used in the production of a hybrid IC, in which a film is drawn on a piece of film using a device, and the film mask is obtained by cutting the drawn film into patterns for each material.
JP1126470A 1989-05-19 1989-05-19 Method for producing film mask used for production of hybrid ic Pending JPH02304560A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1126470A JPH02304560A (en) 1989-05-19 1989-05-19 Method for producing film mask used for production of hybrid ic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1126470A JPH02304560A (en) 1989-05-19 1989-05-19 Method for producing film mask used for production of hybrid ic

Publications (1)

Publication Number Publication Date
JPH02304560A true JPH02304560A (en) 1990-12-18

Family

ID=14936017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1126470A Pending JPH02304560A (en) 1989-05-19 1989-05-19 Method for producing film mask used for production of hybrid ic

Country Status (1)

Country Link
JP (1) JPH02304560A (en)

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