JPH0230101A - Composition for forming resistive film - Google Patents
Composition for forming resistive filmInfo
- Publication number
- JPH0230101A JPH0230101A JP63179142A JP17914288A JPH0230101A JP H0230101 A JPH0230101 A JP H0230101A JP 63179142 A JP63179142 A JP 63179142A JP 17914288 A JP17914288 A JP 17914288A JP H0230101 A JPH0230101 A JP H0230101A
- Authority
- JP
- Japan
- Prior art keywords
- composition
- added
- fenbo4
- resistance value
- znnb2o6
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 26
- 239000000843 powder Substances 0.000 claims abstract description 10
- 239000011521 glass Substances 0.000 claims abstract description 9
- 239000004020 conductor Substances 0.000 abstract description 8
- 239000000654 additive Substances 0.000 abstract description 4
- 230000000996 additive effect Effects 0.000 abstract description 4
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 abstract description 3
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000011812 mixed powder Substances 0.000 abstract description 3
- 229940116411 terpineol Drugs 0.000 abstract description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 abstract 1
- 229910020333 Pb2Ru2O6.5 Inorganic materials 0.000 abstract 1
- 239000006121 base glass Substances 0.000 abstract 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 239000005368 silicate glass Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical group [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000007496 glass forming Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- -1 oxygen ion Chemical class 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、電子回路部品に用いられる抵抗被膜形成用組
成物に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a composition for forming a resistive film used in electronic circuit components.
パイロクロア型温電性酸化物、ＰｂＪｕｚ０６〜．は、
厚膜抵抗体の導電物としてルチル型のＲｕＯ□とともに
用いられているが、特にＰｔ１ｚＲｕ２０６〜．はＲｕ
Ｏ２に比べて高抵抗領域での抵抗体として多く利用され
導電物のガラスに対する濃度変化依存性が少なく、抵抗
率の変動の少ない抵抗体を製造することができる。しか
しながら、シート抵抗値で１００に０７口以上の抵抗体
に用いる場合は、濃度依存性が大きく、不安定になる。Pyrochlore type thermoelectric oxide, PbJuz06~. teeth,
It is used together with rutile-type RuO□ as a conductor for thick film resistors, and in particular Pt1zRu206~. is Ru
Compared to O2, it is widely used as a resistor in a high resistance region, has less dependence on changes in the concentration of the conductive material in glass, and can produce a resistor with less fluctuation in resistivity. However, when used in a resistor with a sheet resistance value of 100.07 or more, the concentration dependence is large and unstable.
従来、高抵抗率の抵抗被膜形成用組成物としては、低祇
抗値のＰｂ２Ｒｕ、０６〜７導電物とガラス成分とから
なる組成物に抵抗値調整剤を添加することで得られてい
る。ここで抵抗値調整作用の大きな添加剤としてはＴｉ
Ｏ２や５ｎＯｚ等が知られているが、フォーカスブロッ
クの高圧用抵抗体やチップ抵抗器等の高圧サージ電圧に
対する耐電圧性が不安定で約２０ｋＶ／ｃｎ＋程度の高
電圧に１秒程の短時間でもさらされると、約７０％以上
もの永久抵抗値変化を生じるという問題点があった。Conventionally, a composition for forming a resistive film with high resistivity has been obtained by adding a resistance value adjusting agent to a composition consisting of a low resistivity Pb2Ru, 06-7 conductive material and a glass component. Here, Ti is an additive that has a large resistance value adjustment effect.
O2, 5nOz, etc. are known, but the voltage resistance of the focus block's high voltage resistor and chip resistor against high voltage surge voltages is unstable, and it is difficult to withstand high voltages of about 20kV/cn+ for a short period of about 1 second. However, there is a problem in that when exposed, a permanent resistance value change of about 70% or more occurs.
本発明の目的は、上記問題点を解消し、抵抗値調整作用
および短時間過負荷による永久抵抗値変化を低減できる
新規な抵抗被膜形成用組成物を提供することにある。An object of the present invention is to provide a novel composition for forming a resistive film that can solve the above-mentioned problems and can reduce the resistance value adjustment effect and the permanent change in resistance value due to short-term overload.
上記目的を達成するために、第１の発明はパイロクロア
型導電性酸化物ＰｂｚＲｕｚＯ６〜７と鉛含有ガラス粉
末とを含有する組成物であって、ＺｎＮｂｚＯｂ。In order to achieve the above object, the first invention is a composition containing a pyrochlore type conductive oxide PbzRuzO6-7 and a lead-containing glass powder, the composition comprising ZnNbzOb.
ＭｇＮｂＪｂ 、 ＦｅＮｂＯ４のうち１種以上が添加
されている点に特徴がある。第２の発明は上記の抵抗被
膜形成用組成物に更にＺ ｎ Ｏ＋ Ｍ ｇ Ｏ＋ Ｆ
ｅ ｚ Ｏ３のうち１種以上が添加されている点に特
徴がある。It is characterized by the addition of one or more of MgNbJb and FeNbO4. The second invention further includes Z n O+ M g O+ F in the above composition for forming a resistive film.
It is characterized in that one or more of e z O3 is added.
パイロクロア型導電性酸化物のパイロクロア構造は、立
方晶のＣａＦ２構造からなる２つのオクタントの組み合
わせからできており、酸素イオンはＣａＦ、構造の立方
体内部の四面体に配位した位置に入るがｐｂ原子の対角
線の位置の酸素が欠き易い傾向にある。このためＰｂｚ
Ｒｕｚ０６〜７に示されるように酸素の化学量論量は６
〜７と幅を有する。The pyrochlore structure of the pyrochlore-type conductive oxide is made of a combination of two octants consisting of a cubic CaF2 structure, and the oxygen ion enters the CaF, tetrahedral coordinate position inside the cube of the structure, but the pb atom There is a tendency for oxygen to be depleted at diagonal positions. For this reason, Pbz
As shown in Ruz06-7, the stoichiometric amount of oxygen is 6
It has a width of ~7.
本発明での該パイロクロア型導電性酸化物としてはＰｂ
ＪｕｚＯ＋、 ｓおよびＰｂＪｕ１０６を挙げることが
でき、特にＰｂＪｕｔＯｂ、 ｓが好適である。また該
導電物の最大粒径は１０００Å以下がよく、望ましくは
１００〜５００人が好適である。The pyrochlore type conductive oxide in the present invention is Pb
Mention may be made of JuzO+, s and PbJu106, with PbJutOb, s being particularly preferred. Further, the maximum particle size of the conductive material is preferably 1000 Å or less, and preferably 100 to 500 particles.
粒径が１ｏｏｏ人を越えた導電粉末を該抵抗被膜形成用
組成物として使用すると抵抗値や電流ノイズが著しく変
動し不安定になり好ましくない。If a conductive powder with a particle size exceeding 100 mm is used in the composition for forming a resistive film, the resistance value and current noise will vary significantly and become unstable, which is not preferable.
該鉛含有ガラス粉末は少なくともＰｂＯが１０重量％以
上、好ましくは５０〜８０１ｉ量％および５ｉＯｚが１
０重量％以上望ましくは１５〜３５重量％含存したもの
が好適である。該鉛含有ガラス粉末中にガラス形成用酸
化物としてＡ １ ｚｏ’ｓ、 ８２０３゜ＣａＯ，Ｚ
ｎＯ，ＢａＯ，Ｔｉ０ｚ、Ｚｒ０ｚ等の１種以上を含有
しても差支えない。また該鉛含有ガラス粉末の平均粒径
は１０μｍ以下がよく、好ましくは５μｍ以下が好適で
あるが、１０μｍを越えた平均粒径をもつ場合、該パイ
ロクロア導電性酸化物に混合、分散した時に、導電物と
の均質性あるいは後述する該添加物ＭｇＮｂｔ０６．Ｚ
ｎＮｂｔＯｂ、ＦｅＮｂＯ４等との反応の均一性が劣る
。The lead-containing glass powder contains at least 10% by weight of PbO, preferably 50 to 801i% by weight, and 1% by weight of 5iOz.
Preferably, the content is 0% by weight or more, preferably 15 to 35% by weight. The lead-containing glass powder contains A 1 zo's, 8203°CaO,Z as a glass-forming oxide.
There is no problem even if one or more of nO, BaO, Ti0z, Zr0z, etc. are contained. Further, the average particle size of the lead-containing glass powder is preferably 10 μm or less, preferably 5 μm or less, but if it has an average particle size exceeding 10 μm, when mixed and dispersed in the pyrochlore conductive oxide, Homogeneity with the conductive material or the additive MgNbt06. Z
The uniformity of the reaction with nNbtOb, FeNbO4, etc. is poor.
ＺｎＮｂ２Ｏ６，ＭｇＮｂｔ０６＋ およびＦｅＮｂＯ
４は該組成物の抵抗値を調整するために１種以上が添加
される必要があり、特にＺｎＮｂ２Ｏ６が好適である。ZnNb2O6, MgNbt06+ and FeNbO
One or more types of 4 must be added in order to adjust the resistance value of the composition, and ZnNb2O6 is particularly suitable.
第２の発明ではＺｎＯ，ＭｇＯ，およびＦｅ、０．のう
ち１種以上を添加する必要があるが、ＺｎＮｂｚＯｂ−
ＺｎＯ、ＭｇＮｂｚＯｂ−ＭｇＯ、ＦｅＮｂ０． Ｆ
ｅｚＯ：＋の組合せで添加すると好適であり特にＺｎＮ
ｂ２０ａ−ＺｎＯの組合せが最適である。In the second invention, ZnO, MgO, and Fe, 0. It is necessary to add one or more of these, but ZnNbzOb-
ZnO, MgNbzOb-MgO, FeNb0. F
It is preferable to add it in combination of ezO:+, especially ZnN
The combination of b20a-ZnO is optimal.
該ＺｎＮｂ２Ｏ６，ＭｇＮｔｌｚ０６ 、およびＦｅＮ
ｂ０．の添加量としては０．０５〜１０重量％が好しい
が、０．０５重置部未満では抵抗値調整作用が認められ
ず、方１０重量％を越えると電流ノイズが高くて実用的
でない。The ZnNb2O6, MgNtlz06, and FeN
b0. The amount of addition is preferably 0.05 to 10% by weight, but if it is less than 0.05% by weight, no resistance value adjustment effect will be observed, and if it exceeds 10% by weight, the current noise will be high and it is not practical.
該ＺｎＯ，ＭｇＯ，およびＦｅｚＯ３の添加量は、それ
ぞれＺｎＯはＺｎＮｂｚＯｈに対してＺｎＯ／ （Ｚｎ
ＮｂｚＯｂ ＋ＺｎＯ）のモル比で０．３以下、ＭｇＯ
はＭｇＮｂｚ０６に対してＭｇＯ／ （ＭｇＮｂｚＯｈ
＋ＭｇＯ）のモル比で０．３以下、およびＦｅｚＯ３は
ＦｅＮｂ０．に対してＦｅｚｅｓ／ （ＦｅＮｂ０４＋
Ｆｅ２Ｏ，）のモル比で０．１５以下とするのが好し
く、これらの値を越えると該組成物の抵抗値の変動が大
きくなりよくない。上記、ＺｎＮｂｚＯｉ 。The amounts of ZnO, MgO, and FezO3 added are as follows: ZnO is ZnO/(Zn
NbzOb + ZnO) molar ratio of 0.3 or less, MgO
is MgO/ (MgNbzOh
+MgO) molar ratio of 0.3 or less, and FezO3 is FeNb0. Fezes/ (FeNb04+
It is preferable that the molar ratio of Fe2O, ) is 0.15 or less; if these values are exceeded, the resistance value of the composition will fluctuate greatly, which is not good. Above, ZnNbzOi.
ＭｇＮｂＪ６ 、 ＦｅＮｂ０ａ、ＺｎＯ、ＭｇＯ、お
よびＦｅ、Ｏ，の粒径は１μｍ以下、望ましくは０．５
μｍ以下が、分散しやすくて好適である。The particle size of MgNbJ6, FeNb0a, ZnO, MgO, and Fe, O, is 1 μm or less, preferably 0.5
A diameter of μm or less is preferable because it is easy to disperse.
ＺｎＮｂ２０ｂ ｒ ＭｇＮｂｚＯｉ 、およびＦｅＮ
ｂ０．は、常法によって得られるものでよい。たとえば
ＺｎＯとＮｂｔＯｓ 、 ＭｇＯとＮｂｚＯｓ 、およ
びＦｅ、Ｏ，とＮｂｚＯｓ とをそれぞれ所定量混合し
エタノールを分散媒としてボールミルで混合した後、約
１０００’Ｃで焼成し、再度ボールミルで粉砕すれば得
られる。ZnNb20b r MgNbzOi, and FeN
b0. may be obtained by a conventional method. For example, ZnO and NbtOs, MgO and NbzOs, and Fe, O, and NbzOs can be mixed in predetermined amounts in a ball mill using ethanol as a dispersion medium, fired at about 1000'C, and ground again in a ball mill. .
本発明の該抵抗被膜形成用組成物を得る製法は、常法に
従って行なえばよい。たとえば導電物であるＰｂＪｕｚ
Ｏ＆、 ｓを１６〜１７重量％、鉛ケイ酸系ガラス粉末
を７５〜８０重量％含み、添加剤としてＺｎＮｂ２０ａ
、 ＭｇＮｂｚ０６ 、 ＦｅＮｂＯ４等を０〜８重量
％含む混合粉末７０重量部に有機ビヒクルとして、エチ
ルセルロースのターピネオール溶液を３０重置部加えて
スリー・ロール・ミルで常温で均一に粉砕、混練して得
られる。また、ＺｎＮｂｚＯｉ、、 ＭｇＮｂｚ０６
。The composition for forming a resistive film of the present invention may be produced by a conventional method. For example, the conductor PbJuz
Contains 16-17% by weight of O&S, 75-80% by weight of lead-silicate glass powder, and ZnNb20a as an additive.
, MgNbz06, FeNbO4, etc. in an amount of 0 to 8% by weight, and 30 parts of terpineol solution of ethylcellulose as an organic vehicle are added thereto to 70 parts by weight of a mixed powder containing 0 to 8% by weight of FeNbO4, MgNbz06, FeNbO4, etc., and the mixture is uniformly pulverized and kneaded at room temperature using a three-roll mill. . Also, ZnNbzOi, MgNbz06
.
ＰｅＮｂ０４等を添加する代りにＺｎＯとＮｂ２Ｏ５、
ＨｇＯとＮｂｚＯｓ 、Ｆｅｚ（ｈとＮｂｚｏｓを最初
から同時に添加しても良（、ＺｎＯ／ Ｎｂ、Ｏ，およ
びＭｇＯ／ＮｂｔＯｓのモル比がそれぞれ１ ”−２、
ＦｅｚＯ３／ ＮｂｚＯｓでは１〜１．４とするのが良
い。この組成物をあらかじめＡｇ −Ｐｄ電極が形成さ
れたアルミナ基板上にスクリーン印刷して１２５℃で２
０分間乾燥後、空気雰囲気ベルト式焼成炉で８５０℃で
９分間焼成すれば抵抗被膜を作成することができる。Instead of adding PeNb04 etc., ZnO and Nb2O5,
HgO, NbzOs, Fez (h and Nbzos may be added simultaneously from the beginning), the molar ratio of ZnO/Nb, O, and MgO/NbtOs is 1''-2, respectively.
For FezO3/NbzOs, it is preferable to set it to 1 to 1.4. This composition was screen printed on an alumina substrate on which Ag-Pd electrodes had been formed in advance, and
After drying for 0 minutes, a resistive film can be produced by firing at 850° C. for 9 minutes in an air atmosphere belt type firing furnace.
尚、該ＺｎＮｂｚＯａ 、 ＭｇＮｂｇＯｂおよびＦｅ
Ｎｂ０．の添加効果については定かではないが次のよう
に推定できる。ＭｇＮｂｚ０６ 、 ＺｎＮｂ２０ｂ
、 ＦｅＮｂＯ４は抵抗被膜焼成時に、高温の溶融状態
にある鉛ケイ酸ガラスと反応し、Ｐｂｒ、ｓｓＭｇｏ、
ｚｑＮｂｌ、ｘＯｂ、ｓｑ ＋Ｐｂ＋、 ５ｚＺｎｏ、
ｚｑＮｂｌ、 ７１０６．３９あるいはＰｂ３Ｎｂ、
０．３などのパイロクロア型の絶縁性酸化物を形成し、
該組成物中に高度に均一分散している。均一な絶縁性結
晶相の分散が導電物に作用してその結果抵抗被膜全体の
抵抗率を高めていると考えられる。In addition, the ZnNbzOa, MgNbgOb and Fe
Nb0. Although the effect of adding is not certain, it can be estimated as follows. MgNbz06, ZnNb20b
, FeNbO4 reacts with lead silicate glass in a high temperature molten state during resistance coating firing, resulting in Pbr, ssMgo,
zzNbl, xOb, sq +Pb+, 5zZno,
zzNbl, 7106.39 or Pb3Nb,
Forms a pyrochlore-type insulating oxide such as 0.3,
It is highly uniformly dispersed in the composition. It is thought that the uniform dispersion of the insulating crystal phase acts on the conductor, thereby increasing the resistivity of the entire resistive film.
また、ＺｎＯ、ＭｇＯおよびＦｅｚＯ：＋はＺｎＮｂｚ
Ｏｈ。Also, ZnO, MgO and FezO:+ is ZnNbz
Oh.
ＭｇＮｂｚＯｂおよびＦｅＮｂＯ４単味の作用を調節す
るものと考えられる。It is thought that it modulates the effects of MgNbzOb and FeNbO4 alone.
ＰｂｚＲｕｚＯｉ、 ｓ、鉛ケイ酸ガラス、ＭｇＮｂｚ
Ｏｉ 。PbzRuzOi, s, lead silicate glass, MgNbz
Oi.
ＺｎＮｂｚＯ，、ＦｅＮｂＯ４，ＭｇＯ、ＺｎＯ、およ
びＦｅ、Ｏ，等を第１表に示す割合で混合し、この混合
粉末７０ｍ１部に有機ビヒクルとしてエチルセルロース
のターピネオール溶液３０重量部を加えロールミルで粉
砕混練し、抵抗被膜形成用組成物を調製した。ZnNbzO, FeNbO, MgO, ZnO, and Fe, O, etc. were mixed in the proportions shown in Table 1, and 30 parts by weight of a terpineol solution of ethyl cellulose was added to 70 ml of this mixed powder as an organic vehicle, followed by pulverization and kneading with a roll mill. A composition for forming a resistive film was prepared.
この組成物をＡｇ／Ｐｄ電極が形成されたアルミナ基板
上にスクリーン印刷して１２５℃で２５分間乾燥後、ベ
ルト焼成炉でピーク温度８５０℃、ピーク時間９分間焼
成した。得られた抵抗被膜のシート抵抗値およびその変
動係数（ＣＶ） 、電流ノイズおよび永久抵抗値変化率
を測定した。永久抵抗値変化率の測定については１６５
〜１６００Ｖの電圧を５秒間印加して行った。また、こ
れらとは別にＰｂｚＲｕｚＯｉ、 ｓと鉛ケイ酸ガラス
のみからなる比較例の組成物についても同様の評価を行
った。以上の結果を本発明例については実験隘１〜３０
、比較例について実験阻３１〜３３として示した。This composition was screen printed on an alumina substrate on which an Ag/Pd electrode was formed, dried at 125°C for 25 minutes, and then fired in a belt firing furnace at a peak temperature of 850°C for a peak time of 9 minutes. The sheet resistance value, its coefficient of variation (CV), current noise, and permanent resistance change rate of the obtained resistive coating were measured. 165 for measurement of permanent resistance change rate
This was done by applying a voltage of ~1600V for 5 seconds. Separately from these, similar evaluations were also conducted on a comparative composition consisting only of PbzRuzOi, s and lead silicate glass. The above results are summarized in Experiments 1 to 30 for the present invention.
, Comparative examples are shown as Experiments 31 to 33.
本発明例では抵抗被膜のシート抵抗値の変動係数、電流
ノイズおよび永久抵抗値変化率ともに小さく抑えること
ができた。In the example of the present invention, the coefficient of variation of the sheet resistance value of the resistive coating, the current noise, and the rate of change in permanent resistance value were all able to be suppressed to small values.
本発明は、抵抗被膜の抵抗値調整作用が大で、電流ノイ
ズおよび永久抵抗値変化率ともに低減でき、その効果は
極めて大である。In the present invention, the resistance value adjustment effect of the resistive coating is large, and both current noise and permanent resistance value change rate can be reduced, and the effect is extremely large.
Claims (2)
＿６＿〜＿７と鉛含有ガラス粉末とを含有する組成物で
あって、ＺｎＮｂ＿２Ｏ＿６，ＭｇＮｂ＿２Ｏ＿６，Ｆ
ｅＮｂＯ＿４のうち１種以上が添加されていることを特
徴とする抵抗被膜形成用組成物。(1) Pyrochlore type conductive oxide Pb_2Ru_2O
A composition containing _6_ to _7 and lead-containing glass powder, comprising ZnNb_2O_6, MgNb_2O_6, F
A composition for forming a resistive film, characterized in that one or more types of eNbO_4 are added.
て、ＺｎＯ，ＭｇＯ，Ｆｅ＿２Ｏ＿３のうち１種以上が
添加されてなることを特徴とする抵抗被膜形成用組成物
。(2) The composition for forming a resistive film according to claim (1), characterized in that one or more of ZnO, MgO, and Fe_2O_3 is added.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63179142A JPH0230101A (en) | 1988-07-20 | 1988-07-20 | Composition for forming resistive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63179142A JPH0230101A (en) | 1988-07-20 | 1988-07-20 | Composition for forming resistive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0230101A true JPH0230101A (en) | 1990-01-31 |
Family
ID=16060710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63179142A Pending JPH0230101A (en) | 1988-07-20 | 1988-07-20 | Composition for forming resistive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0230101A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107215902A (en) * | 2017-05-26 | 2017-09-29 | 常熟理工学院 | A kind of preparation method of lithium ion battery negative material niobic acid iron |
| CN112086629A (en) * | 2020-09-08 | 2020-12-15 | 合肥国轩高科动力能源有限公司 | Si @ C/ZnNb2O6Preparation method and application of negative electrode composite material |
-
1988
- 1988-07-20 JP JP63179142A patent/JPH0230101A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107215902A (en) * | 2017-05-26 | 2017-09-29 | 常熟理工学院 | A kind of preparation method of lithium ion battery negative material niobic acid iron |
| CN112086629A (en) * | 2020-09-08 | 2020-12-15 | 合肥国轩高科动力能源有限公司 | Si @ C/ZnNb2O6Preparation method and application of negative electrode composite material |
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