JPH0229657A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPH0229657A JPH0229657A JP63179583A JP17958388A JPH0229657A JP H0229657 A JPH0229657 A JP H0229657A JP 63179583 A JP63179583 A JP 63179583A JP 17958388 A JP17958388 A JP 17958388A JP H0229657 A JPH0229657 A JP H0229657A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist film
- substrate
- light
- ultraviolet light
- entire surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000001678 irradiating effect Effects 0.000 abstract description 6
- 229920003986 novolac Polymers 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体製造工程のホトレジスト膜形成工程に
おいて、ホトレジストのコントラスト特性を向上させ、
極めて微細なレジストパターンを形成することのできる
半導体装置の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention improves the contrast characteristics of a photoresist in a photoresist film forming process in a semiconductor manufacturing process.
The present invention relates to a method for manufacturing a semiconductor device that can form extremely fine resist patterns.
従来の技術
半導体素子の高集積化にともない、極めて微細なレジス
トパターンを形成する技術が求められている。従来から
用いられている単層レジストプロセスに代え、単層ホト
レジスト上に光コントラストを強調する物質を塗布する
ことにょシホトレジストのコントラスト特性を向上させ
るＣＥＬ法（Ｃｏｎｔｒａｓｔ Ｅｎｈａｎｃｅｄ Ｌ
ｉｔｈｏｇｒａｐｈｙ）やドライエツチング工程を必要
とする多層レジスト法が検討されているが、工程の複雑
化に加え、安定性にも乏しく量産化の点で問題が有る。2. Description of the Related Art As semiconductor devices become more highly integrated, there is a need for technology for forming extremely fine resist patterns. Instead of the conventional single-layer resist process, the CEL method (Contrast Enhanced L) improves the contrast properties of photoresists by coating a single-layer photoresist with a substance that enhances optical contrast.
A multilayer resist method that requires a dry etching process (lithography) and a dry etching process is being considered, but in addition to complicating the process, it is also poor in stability and has problems in terms of mass production.
近年、簡便な工程で効果的にホトレジストのコントラス
ト特性を向上させる技術として露光後紫外光照射法が開
発された。この方法について第２図に述べる。同図ａは
ノボラック樹脂系のポジ型ホトレジスト膜２を基板１上
に形成したと宅ろを示す。同図すは波長が４３６ｎｍの
紫外光４にょシ、マスクパターン３をホトレジスト膜２
に転写露光する工程を示す。同図Ｃは、基板７をホット
プレート５で１００℃程度に加熱しながらホトレジスト
膜２の表面に波長が２５４ ｎｍの紫外光６を全面照射
する工程を示す。この照射は、不活性ガス雰囲気中又は
、真空中で行う必要がある。同図ｄは、現像処理後、レ
ジストパターン９が形成された状態を示す。In recent years, a post-exposure ultraviolet light irradiation method has been developed as a technique for effectively improving the contrast characteristics of photoresists through a simple process. This method is described in FIG. FIG. 1A shows a state in which a novolac resin-based positive photoresist film 2 is formed on a substrate 1. FIG. In the figure, ultraviolet light with a wavelength of 436 nm is applied to the photoresist film 2.
The process of transfer exposure is shown in FIG. FIG. 3C shows a step in which the surface of the photoresist film 2 is entirely irradiated with ultraviolet light 6 having a wavelength of 254 nm while the substrate 7 is heated to about 100° C. with a hot plate 5. This irradiation must be performed in an inert gas atmosphere or in a vacuum. Figure d shows a state in which a resist pattern 9 is formed after the development process.
この方法によるコントラスト特性の向上は、ホトレジス
ト膜を加熱しながらその表面に紫外光を照射することに
よって、表面付近でノボラック樹脂と感光剤とが、架橋
反応を生じ、現像液に対して難溶化するためである。This method improves the contrast properties by irradiating the surface of the photoresist film with ultraviolet light while heating it, which causes a crosslinking reaction between the novolac resin and the photosensitizer near the surface, making it less soluble in the developer. It's for a reason.
発明が解決しようとする課題
上記の露光後紫外光照射法では、レジストのコントラス
トが向上する反面、レジスト感度が低下し、第２図すの
マスクパターン転写露光に要する時間が長くなる。本発
明は、上記の問題点の解決を図ったものであシ、レジス
ト感度が高く、コントラストの高いレジストパターンを
安定かつ容易に形成することのできる半導体装置の製造
方法である。Problems to be Solved by the Invention In the above-mentioned post-exposure ultraviolet light irradiation method, although the contrast of the resist is improved, the resist sensitivity is decreased and the time required for the mask pattern transfer exposure shown in FIG. 2 becomes longer. The present invention aims to solve the above-mentioned problems, and is a method of manufacturing a semiconductor device that can stably and easily form a resist pattern with high resist sensitivity and high contrast.
課題を解決するための手段
本発明では、上記の課題を解決する手段とじて露光後紫
外光照射法において現像処理を施す前に、基板温度を８
０℃以下に保持しながらホトレジスト膜表面に紫外光を
全面照射することによって、少ないマスク転写露光エネ
ルギーで、高いコントラストを持ったレジストパターン
を形成することを可能にしたものである。Means for Solving the Problems In the present invention, as a means for solving the above-mentioned problems, the substrate temperature is lowered to 8 ℃ before the development process in the post-exposure ultraviolet light irradiation method.
By irradiating the entire surface of the photoresist film with ultraviolet light while maintaining the temperature below 0° C., it is possible to form a resist pattern with high contrast with a small amount of mask transfer exposure energy.
作 用
本発明における作用は、紫外光によってマスクパターン
をホトレジスト膜に転写露光した後、基板を８０℃以上
１３ｏ℃以下に保持しながらホトレジスト膜の表面に紫
外光を全面照射することによって、その表面の転写未露
光部分を選択的に現像液に対して不溶化させる。その後
、本発明の特徴である基板温度をｓｏｂ以下に保持しな
がらホトレジスタ膜の表面に紫外光を全面照射すること
で、ホトレジスト膜の深層部を現像液に対して可溶化さ
せる。これにより少ないマスクパターン転写露光エネル
ギーでコントラストの高いレジストパターンを形成する
ことができる。また条件を最適化することで現像液によ
るレジストのサイドエツチング量を制御し、矩形から逆
台形の断面を持つレジストパターンを安定に形成するこ
とができる。Function The function of the present invention is that after a mask pattern is transferred and exposed to a photoresist film using ultraviolet light, the entire surface of the photoresist film is irradiated with ultraviolet light while maintaining the substrate at a temperature of 80° C. or higher and 13° C. or lower. The transferred unexposed portions of are selectively made insoluble in a developer. Thereafter, by irradiating the entire surface of the photoresist film with ultraviolet light while maintaining the substrate temperature below SOB, which is a feature of the present invention, the deep layer of the photoresist film is made solubilized in the developer. Thereby, a resist pattern with high contrast can be formed with less mask pattern transfer exposure energy. Furthermore, by optimizing the conditions, the amount of side etching of the resist by the developer can be controlled, and a resist pattern having a cross section ranging from a rectangle to an inverted trapezoid can be stably formed.
実施例 本発明による実施例を、図面を参照しながら説明する。Example Embodiments according to the present invention will be described with reference to the drawings.
第１図は、本発明によるレジストパターンの形成工程を
示したものである。同図ａは、基板１にノボラック系の
ポジ型ホトレジスト膜２を１．５μｍの厚さに形成した
ところを示す。同図すは、ホトレジスト膜２にマスクパ
ターン３を波長が４３６ｎｍの紫外光４を用いて転写露
光を行う。FIG. 1 shows the process of forming a resist pattern according to the present invention. FIG. 1A shows a novolak positive photoresist film 2 formed on a substrate 1 to a thickness of 1.5 μm. In the figure, a mask pattern 3 is transferred onto a photoresist film 2 using ultraviolet light 4 having a wavelength of 436 nm.
紫外光４の照射量は、約５０ｍＴ／ｃｄである。同図Ｃ
は、基板１を１００℃に保持したホットプレートＳ上で
ホトレジスト膜２の表面に波長が２５４ｎｍの紫外光６
を窒素雰囲気中で全面照射する工程を示す。紫外光６の
照射量は、約１５０ｍＴ／ｄである。同図ｄは、基板１
を２３℃に保持したホットプレート７上でホトレジスト
膜２の表面に波長が４３６ ｎｍの紫外光８を全面照射
する工程を示す。紫外光８の照射量は、約５０ ｍ Ｊ
／ｃｙｔｒである。The irradiation amount of the ultraviolet light 4 is approximately 50 mT/cd. Same figure C
In this example, ultraviolet light 6 with a wavelength of 254 nm is applied to the surface of the photoresist film 2 on a hot plate S holding the substrate 1 at 100°C.
This shows the process of irradiating the entire surface in a nitrogen atmosphere. The irradiation amount of the ultraviolet light 6 is approximately 150 mT/d. d in the same figure shows the substrate 1
The process of irradiating the entire surface of the photoresist film 2 with ultraviolet light 8 having a wavelength of 436 nm on a hot plate 7 maintained at 23°C is shown. The irradiation amount of ultraviolet light 8 is approximately 50 mJ
/cytr.
同図ｅは、現像処理後に形成されたレジストパターン９
を示す。現像液には、市販のノンメタルアルカリ現像液
を使用し、パドル現像を行った。Figure e shows the resist pattern 9 formed after the development process.
shows. Paddle development was performed using a commercially available non-metal alkaline developer.
発明の効果
本発明によれば、簡便に単層ホトレジストのコントラス
ト特性の向上が図れ、かつレジスト感度の低下を招くこ
とがない。また矩形から逆台形の断面を持つレジストパ
ターンを安定に形成できるため、レジストパターンをマ
スクとして金属膜の蒸着を行う、リフトオフプロセスを
効果的に行うことができる。以上のごとく本発明は、微
細なレジストパターンを安定して、形成する方法として
工業的価値が高い。Effects of the Invention According to the present invention, it is possible to easily improve the contrast characteristics of a single-layer photoresist without causing a decrease in resist sensitivity. Furthermore, since a resist pattern having a cross section ranging from a rectangle to an inverted trapezoid can be stably formed, a lift-off process in which a metal film is deposited using the resist pattern as a mask can be effectively performed. As described above, the present invention has high industrial value as a method for stably forming fine resist patterns.
【図面の簡単な説明】
第１図は本発明によるしＩシストパターンの形成方法を
示した図、第２図は従来方法によるレジストパターンの
形成方法を示した図である。
１・・・・・・基板、２・・・・・・ホトレジスト膜、
３・・・・・・マスクパターン、４・・・・・・紫外光
（波長＝ ４３６ ｎｍ）、５・・・・・・ホットプレ
ート（温度＝１ｏＯ℃）、６・・・・・・紫外光（波長
＝２５４ｎｍ）、７・・・・・・ホットプレート（温度
２３℃）、８・・・・・・紫外光（波長＝４３６ｎｍ）
、９・・・・・・レジヌトパターン。
代理人の氏名 弁理士 粟 野 重 孝 ほか１名／−
−−基版
？−ホトレジスト
３−゛マスクパターン
４−９ｉ町ダト光 （５友Ａシー４３６我ｆｉ）９−・
レジ′ストノずターン
寓BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram showing a method for forming a resist pattern according to the present invention, and FIG. 2 is a diagram showing a method for forming a resist pattern according to a conventional method. 1...Substrate, 2...Photoresist film,
3... Mask pattern, 4... Ultraviolet light (wavelength = 436 nm), 5... Hot plate (temperature = 1oO ℃), 6... Ultraviolet light Light (wavelength = 254 nm), 7... Hot plate (temperature 23°C), 8... Ultraviolet light (wavelength = 436 nm)
, 9... Resinut pattern. Name of agent: Patent attorney Shigetaka Awano and 1 other person/-
--Basic edition? -Photoresist 3-゛Mask pattern 4-9i Town Dato Hikari (5 Tomo A C436 Gafi) 9-・
Registrar's Turn Fable
Claims (1)
ンを転写露光後、基板の温度を８０℃以上、１３０℃以
下に保持しながら前記ホトレジスト膜の表面に紫外光の
第１の全面照射を行い、その後に基板の温度を８０℃以
下に保持しながら前記ホトレジスト膜の表面に紫外光の
第２の全面照射を行った後、現像処理を施すことを特徴
とする半導体装置の製造方法。(1) After transferring and exposing the circuit pattern to the photoresist film formed on the substrate, the first entire surface of the photoresist film is irradiated with ultraviolet light while maintaining the temperature of the substrate at 80°C or higher and 130°C or lower. . A method of manufacturing a semiconductor device, comprising: thereafter performing a second full-surface irradiation of ultraviolet light on the surface of the photoresist film while maintaining the temperature of the substrate at 80° C. or lower, and then performing a development process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63179583A JP2583988B2 (en) | 1988-07-19 | 1988-07-19 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63179583A JP2583988B2 (en) | 1988-07-19 | 1988-07-19 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0229657A true JPH0229657A (en) | 1990-01-31 |
| JP2583988B2 JP2583988B2 (en) | 1997-02-19 |
Family
ID=16068264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63179583A Expired - Lifetime JP2583988B2 (en) | 1988-07-19 | 1988-07-19 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2583988B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03255613A (en) * | 1990-03-05 | 1991-11-14 | Matsushita Electron Corp | Resist pattern forming method |
| WO2021166806A1 (en) * | 2020-02-17 | 2021-08-26 | コネクテッドロボティクス株式会社 | Dishwashing system, control device for dishwashing system, and program |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62129849A (en) * | 1985-12-02 | 1987-06-12 | Tokyo Ohka Kogyo Co Ltd | Stabilizing method for positive type photoresist pattern |
| JPS638739A (en) * | 1986-06-30 | 1988-01-14 | Tokyo Ohka Kogyo Co Ltd | Film hardening method for positive type photoresist pattern |
| JPH01243052A (en) * | 1988-03-24 | 1989-09-27 | Matsushita Electron Corp | Resist pattern forming method |
-
1988
- 1988-07-19 JP JP63179583A patent/JP2583988B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62129849A (en) * | 1985-12-02 | 1987-06-12 | Tokyo Ohka Kogyo Co Ltd | Stabilizing method for positive type photoresist pattern |
| JPS638739A (en) * | 1986-06-30 | 1988-01-14 | Tokyo Ohka Kogyo Co Ltd | Film hardening method for positive type photoresist pattern |
| JPH01243052A (en) * | 1988-03-24 | 1989-09-27 | Matsushita Electron Corp | Resist pattern forming method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03255613A (en) * | 1990-03-05 | 1991-11-14 | Matsushita Electron Corp | Resist pattern forming method |
| WO2021166806A1 (en) * | 2020-02-17 | 2021-08-26 | コネクテッドロボティクス株式会社 | Dishwashing system, control device for dishwashing system, and program |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2583988B2 (en) | 1997-02-19 |
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