JPH0229551U - - Google Patents

Info

Publication number
JPH0229551U
JPH0229551U JP10810688U JP10810688U JPH0229551U JP H0229551 U JPH0229551 U JP H0229551U JP 10810688 U JP10810688 U JP 10810688U JP 10810688 U JP10810688 U JP 10810688U JP H0229551 U JPH0229551 U JP H0229551U
Authority
JP
Japan
Prior art keywords
semiconductor laser
opposing side
semiconductor
laser
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10810688U
Other languages
Japanese (ja)
Other versions
JPH0747896Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988108106U priority Critical patent/JPH0747896Y2/en
Publication of JPH0229551U publication Critical patent/JPH0229551U/ja
Application granted granted Critical
Publication of JPH0747896Y2 publication Critical patent/JPH0747896Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案に係る半導体レーザ装置の一例
を概略的に示す斜視図、第2図は第1図に示され
る例の断面図、第3図は第1図に示される例の動
作説明に供される側面図、第4図は第1図に示さ
れる例及び従来の半導体レーザ装置の出力特性を
示す特性図、第5図は第1図に示される例に対す
る駆動電流制御を行う回路の一例を示す回路図、
第6図及び第7図は従来の半導体レーザ装置を示
す斜視図である。 図中、21はレーザダイオード、22は半導体
基板、24は上側電極層、25及び27はクラツ
ド層、26は活性層、29は下側電極層、32及
び33は側面、34は全反射膜、35はフオトダ
イオードである。
1 is a perspective view schematically showing an example of a semiconductor laser device according to the present invention, FIG. 2 is a sectional view of the example shown in FIG. 1, and FIG. 3 is an explanation of the operation of the example shown in FIG. 1. 4 is a characteristic diagram showing the output characteristics of the example shown in FIG. 1 and the conventional semiconductor laser device, and FIG. 5 is a circuit for controlling the drive current for the example shown in FIG. 1. A circuit diagram showing an example of
FIGS. 6 and 7 are perspective views showing conventional semiconductor laser devices. In the figure, 21 is a laser diode, 22 is a semiconductor substrate, 24 is an upper electrode layer, 25 and 27 are cladding layers, 26 is an active layer, 29 is a lower electrode layer, 32 and 33 are side surfaces, 34 is a total reflection film, 35 is a photodiode.

Claims (1)

【実用新案登録請求の範囲】 一対の対向側面を有し、該対向側面の一方にレ
ーザ光の出射部が設けられるとともに他方に上記
レーザ光に対する全反射膜が配され、基板上に固
定された半導体レーザ素子と、 上記基板内もしくは上記基板上における上記半
導体レーザ素子の上記対向側面の一方側に配され
、上記半導体レーザ素子における上記レーザ光の
出射部から出射するレーザ光の一部分を受ける半
導体受光素子と、 を備えて構成される半導体レーザ装置。
[Claims for Utility Model Registration] It has a pair of opposing side surfaces, one of the opposing side surfaces is provided with a laser beam emitting part, and the other side is provided with a total reflection film for the laser beam, and is fixed on a substrate. a semiconductor laser element, and a semiconductor light receiver disposed on one side of the opposing side surface of the semiconductor laser element in or on the substrate and receiving a portion of the laser light emitted from the laser light emitting part of the semiconductor laser element; A semiconductor laser device comprising: an element;
JP1988108106U 1988-08-17 1988-08-17 Semiconductor laser device Expired - Lifetime JPH0747896Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988108106U JPH0747896Y2 (en) 1988-08-17 1988-08-17 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988108106U JPH0747896Y2 (en) 1988-08-17 1988-08-17 Semiconductor laser device

Publications (2)

Publication Number Publication Date
JPH0229551U true JPH0229551U (en) 1990-02-26
JPH0747896Y2 JPH0747896Y2 (en) 1995-11-01

Family

ID=31343130

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988108106U Expired - Lifetime JPH0747896Y2 (en) 1988-08-17 1988-08-17 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPH0747896Y2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62118470U (en) * 1986-01-20 1987-07-28
JPS62145358U (en) * 1986-03-10 1987-09-12

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62118470U (en) * 1986-01-20 1987-07-28
JPS62145358U (en) * 1986-03-10 1987-09-12

Also Published As

Publication number Publication date
JPH0747896Y2 (en) 1995-11-01

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