JPH02288251A - Cutting method of semiconductor wafer - Google Patents
Cutting method of semiconductor waferInfo
- Publication number
- JPH02288251A JPH02288251A JP1110217A JP11021789A JPH02288251A JP H02288251 A JPH02288251 A JP H02288251A JP 1110217 A JP1110217 A JP 1110217A JP 11021789 A JP11021789 A JP 11021789A JP H02288251 A JPH02288251 A JP H02288251A
- Authority
- JP
- Japan
- Prior art keywords
- sheet
- cutting
- adhesive layer
- wafer
- blade
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000012790 adhesive layer Substances 0.000 claims abstract description 19
- 239000011347 resin Substances 0.000 claims abstract description 3
- 229920005989 resin Polymers 0.000 claims abstract description 3
- 239000004698 Polyethylene Substances 0.000 abstract description 3
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 abstract description 3
- -1 polyethylene Polymers 0.000 abstract description 3
- 229920000573 polyethylene Polymers 0.000 abstract description 3
- 229920000098 polyolefin Polymers 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 22
- 230000000694 effects Effects 0.000 description 3
- 239000008188 pellet Substances 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体ウェーハの切断方法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a method for cutting a semiconductor wafer.
従来、半導体ウェーハを個々のペレットに分離する技術
の一つとして、切断用ブレードを用いる方法がある。Conventionally, as one of the techniques for separating semiconductor wafers into individual pellets, there is a method using a cutting blade.
第2図(a)〜(C)は従来の牛導体ウェーハの切断方
法を説明するための工程順に示した断面図である。FIGS. 2(a) to 2(C) are cross-sectional views showing a conventional method for cutting a conductor wafer in the order of steps.
まず、第2図(a)に示すように、ポリエチレンや塩化
ビニール等の基材に接着剤層2を設けたシート1をステ
ンレス鋼等で作られた固定用フレーム4に貼付け、半導
体ウェーハ5の裏面を接着剤層2を利用してシート1に
貼付ける。First, as shown in FIG. 2(a), a sheet 1 made of a base material such as polyethylene or vinyl chloride with an adhesive layer 2 is attached to a fixing frame 4 made of stainless steel or the like, and a semiconductor wafer 5 is attached. The back side is attached to the sheet 1 using the adhesive layer 2.
次に、第2図(b)に示すように、切断装置上に置き、
切断用ブレード6を用いて半導体ウェーハ5の表面から
裏面に達する切溝を入れる。Next, as shown in FIG. 2(b), place it on the cutting device,
A cutting groove is made using the cutting blade 6 from the front surface to the back surface of the semiconductor wafer 5.
次に、第2図(c)に示すように、1ラインの切断が終
ると、ブレード6を上方に持上げ、次のラインの切断に
入る。Next, as shown in FIG. 2(c), when one line has been cut, the blade 6 is lifted upward and the next line is cut.
上述した従来のウェーハの切断方法は、ウェーハ上の1
ラインを切断装置のブレードによりウェーハ表面からシ
ート1迄完全切断した直後、ブレ−ド6は、第2図(b
)に示すようにシート2の上層部へ切り込んでおり、ブ
レード6が二方向で切断する。通常、スピードアップ可
能な往復モードにおいては、ブレードのZ軸位置が重要
であり、そのままの状態ではインデックス送り時にブレ
ード破損が生じる為、第2図(c)に示すように、必ら
ず1ライン各にシート上面へブレードが移動しなければ
ならず、その1ライン毎のZ軸移動時間によりブレード
が一方向で切断する片道モードとほぼ同スピードとなり
、シート迄切り込まないペレットの不完全切断方法(但
し、この方法はブレーキング工程が必要な為、後工程で
工数が増加する欠点がある。)に比べ約30%の工程能
力のダウンが生じ、設備投資を行なわなければならない
という欠点がある。In the conventional wafer cutting method described above, one
Immediately after the line is completely cut from the wafer surface to sheet 1 by the blade of the cutting device, the blade 6 cuts the line as shown in Fig. 2 (b).
), the upper layer of the sheet 2 is cut, and the blade 6 cuts in two directions. Normally, in the reciprocating mode where speed can be increased, the Z-axis position of the blade is important, and if left as is, the blade will break during index feeding, so as shown in Figure 2 (c), it is necessary to The blade must move to the top surface of the sheet for each line, and the Z-axis movement time for each line makes it almost the same speed as the one-way mode in which the blade cuts in one direction. This is an incomplete method for cutting pellets that does not cut into the sheet. (However, since this method requires a braking process, it has the disadvantage of increasing the number of man-hours in the subsequent process.) This method has the disadvantage of reducing process capacity by approximately 30% and requiring capital investment. .
また、Z軸移動速度の高速化にも限界があり、Z軸の位
置精度は重要で、無理な高速化を行なうと製品上チッピ
ング、欠けの増加や不完全切断が生じ、歩留を下げたり
、設備上、ブレード回転部のZ軸の精度の低下や異常発
生の原因となり、稼働率や工期へ支障を来たすこともあ
る。In addition, there is a limit to increasing the Z-axis movement speed, and the positional accuracy of the Z-axis is important. If the speed is increased too much, chipping, chipping, and incomplete cutting may occur on the product, which may reduce yield. In terms of equipment, this may cause a decrease in the accuracy of the Z-axis of the blade rotating part or the occurrence of abnormalities, which may impede the operating rate and construction period.
本発明の半導体ウェーハの切断方法は、可撓性の高分子
有機樹脂製シートに半導体ウェーハ貼り付け部分とその
近傍に接着剤層を形成する工程と、前記接着剤層に半導
体ウェーハを貼り付ける工程と、前記シートを固定用フ
レームに取付ける工程と、前記フレームごとウェーハ切
断装置に載置して前記半導体ウェーハを切断する工程と
を含んで構成される。The semiconductor wafer cutting method of the present invention includes the steps of forming an adhesive layer on a flexible polymeric organic resin sheet at and near the area where the semiconductor wafer is attached, and attaching the semiconductor wafer to the adhesive layer. The method includes the steps of: attaching the sheet to a fixing frame; and placing the frame together with a wafer cutting device to cut the semiconductor wafer.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第1図(a)、(b)は本発明の一実施例を説明するた
めの工程瀬に示した断面図である。FIGS. 1(a) and 1(b) are sectional views shown at the end of a process for explaining an embodiment of the present invention.
第1図(a)に示すように、塩化ビニール、ポリエチレ
ン、ポリオレフィン系等の厚さ100μm前後のシート
1の上に貼り付けしようとするウェーハ5から一定の距
離の部分を除いて厚さ10μm程度の接着剤層2を設け
る。このシート1を固定用のフレーム4に貼り付ける。As shown in FIG. 1(a), the thickness is about 10 μm except for the part at a certain distance from the wafer 5 to be pasted onto a sheet 1 made of vinyl chloride, polyethylene, polyolefin, etc. with a thickness of around 100 μm. An adhesive layer 2 is provided. This sheet 1 is attached to a fixing frame 4.
接着剤層2を設ける。このシート1を固定用フレーム4
に貼り付ける。接着剤層2のある部分にウェーハ5の裏
面を貼り付ける。An adhesive layer 2 is provided. Frame 4 for fixing this sheet 1
Paste it on. The back side of the wafer 5 is attached to a portion of the adhesive layer 2.
次に、第1図(b)に示すように、このシート1をフレ
ーム4と共に切断装置ステージ上に真空吸着させ、切断
用ブレード4にて二方向がら往復モードでシートの切り
込み量が5μm程度となるようにブレード6の高さを設
定し、完全切断を行なう。Next, as shown in FIG. 1(b), the sheet 1 is vacuum-adsorbed together with the frame 4 on the stage of a cutting device, and the cutting blade 4 cuts the sheet in a reciprocating mode in two directions until the depth of the cut is about 5 μm. The height of the blade 6 is set so that the blade 6 is cut completely.
尚、インデックス送りの際は、ウェーハ外周部からフレ
ーム4までの間に接着剤層がないから、ブレード6のZ
軸の移動なしに次のカッティングラインまで移動するこ
とが出来、この為スピードダウンすることがない。また
、シート切り込み量は、ブレード磨耗量の実績値から計
算し、自動制御可能である。In addition, during index feeding, since there is no adhesive layer between the wafer outer periphery and the frame 4, the Z of the blade 6
It is possible to move to the next cutting line without moving the axis, so there is no speed reduction. Further, the amount of sheet cutting can be calculated from the actual value of the amount of blade wear and can be automatically controlled.
ウェーハ貼り付けの際、シート中央部の接着剤層の大き
さのばらつきは破線で囲んだ部分7まで許容することが
出来る為、シートの精度は特に厳しく要求されず、また
ウェーハ貼り付け後のずれも多少緩和することができる
。When attaching wafers, variations in the size of the adhesive layer at the center of the sheet can be tolerated up to the area 7 surrounded by the broken line, so sheet precision is not particularly required, and deviations after attaching the wafers can be tolerated. can also be relaxed to some extent.
以上説明したように、本発明は、半導体ウェーハを貼り
付ける接着剤層をウェーハ貼付け部分に設け、その他の
部分に設けないようにしたので、ウェーハの1ライン切
断後切断用ブレードをそのままZ軸の移動なしに次のラ
インへインデックス送りが可能となり、従来に比べ約3
0%の切削時間の短縮が行なえるという効果がある。As explained above, in the present invention, the adhesive layer for pasting the semiconductor wafer is provided in the wafer pasting area and not in other parts, so after cutting one line of the wafer, the cutting blade is directly moved along the Z axis. It is now possible to index feed to the next line without moving, approximately 3 times faster than before.
This has the effect of reducing cutting time by 0%.
また、シート中央部分からシート固定用フレームの間に
は、ブレードが接着剤層に切り込まないので接着剤のブ
レードへの付着が少なくなり、それに伴ないブレード磨
耗やカッティング不良による汚れ発生を防ぐことが出来
るという効果がある。In addition, since the blade does not cut into the adhesive layer between the center of the sheet and the sheet fixing frame, less adhesive adheres to the blade, which prevents stains due to blade wear and poor cutting. It has the effect of being able to.
【図面の簡単な説明】
第1図(a)、(b)は本発明の一実施例を説明するた
めの工程順に示した断面図、第2図(a)〜(C)は従
来の半導体ウェーハの切断方法を説明するための工程順
に示した断面図である。
1・・・シート、2・・・接着剤層、4・・・フレーム
、5・・・半導体ウェーハ 6・・・ブレード、7・・
・接着剤層許容範囲部分。[BRIEF DESCRIPTION OF THE DRAWINGS] FIGS. 1(a) and 1(b) are cross-sectional views showing the steps of an embodiment of the present invention, and FIGS. 2(a) to (C) are cross-sectional views of conventional semiconductors. FIG. 3 is a cross-sectional view showing the order of steps for explaining a wafer cutting method. DESCRIPTION OF SYMBOLS 1... Sheet, 2... Adhesive layer, 4... Frame, 5... Semiconductor wafer 6... Blade, 7...
・Adhesive layer tolerance area.
Claims (1)
付け部分とその近傍に接着剤層を形成する工程と、前記
接着剤層に半導体ウェーハを貼り付ける工程と、前記シ
ートを固定用フレームに取付ける工程と、前記フレーム
ごとウェーハ切断装置に載置して前記半導体ウェーハを
切断する工程とを含むことを特徴とする半導体ウェーハ
の切断方法。A step of forming an adhesive layer on a flexible polymeric organic resin sheet at and near the area where the semiconductor wafer is attached, a step of attaching the semiconductor wafer to the adhesive layer, and a step of attaching the sheet to a fixing frame. A method for cutting a semiconductor wafer, comprising the steps of: placing the entire frame on a wafer cutting device and cutting the semiconductor wafer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1110217A JPH02288251A (en) | 1989-04-27 | 1989-04-27 | Cutting method of semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1110217A JPH02288251A (en) | 1989-04-27 | 1989-04-27 | Cutting method of semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02288251A true JPH02288251A (en) | 1990-11-28 |
Family
ID=14530043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1110217A Pending JPH02288251A (en) | 1989-04-27 | 1989-04-27 | Cutting method of semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02288251A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016219764A (en) * | 2015-05-22 | 2016-12-22 | 久元電子股▲ふん▼有限公司 | Circle split method |
-
1989
- 1989-04-27 JP JP1110217A patent/JPH02288251A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016219764A (en) * | 2015-05-22 | 2016-12-22 | 久元電子股▲ふん▼有限公司 | Circle split method |
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