JPH02285274A - Magnetoresistance effect element - Google Patents
Magnetoresistance effect elementInfo
- Publication number
- JPH02285274A JPH02285274A JP1106503A JP10650389A JPH02285274A JP H02285274 A JPH02285274 A JP H02285274A JP 1106503 A JP1106503 A JP 1106503A JP 10650389 A JP10650389 A JP 10650389A JP H02285274 A JPH02285274 A JP H02285274A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- dimples
- width
- hysteresis
- stripe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000694 effects Effects 0.000 title claims abstract description 6
- 230000005294 ferromagnetic effect Effects 0.000 claims abstract description 5
- 239000010409 thin film Substances 0.000 claims description 12
- 230000005291 magnetic effect Effects 0.000 abstract description 20
- 230000005381 magnetic domain Effects 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 239000012528 membrane Substances 0.000 abstract 3
- 238000001039 wet etching Methods 0.000 abstract 1
- 238000001514 detection method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 241000257465 Echinoidea Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Landscapes
- Measuring Magnetic Variables (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
- Transmission And Conversion Of Sensor Element Output (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、磁気信号を強磁性体薄膜の磁気抵抗効果を利
用して検出する磁気エンコーダー、磁気ヘッド等の磁気
抵抗効果素子に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to magnetoresistive elements such as magnetic encoders and magnetic heads that detect magnetic signals using the magnetoresistive effect of a ferromagnetic thin film. .
磁気抵抗効果素子は、磁気信号に対して磁気検出感度が
極めて高いことから高精度の回転検出あるいは位置検出
センサとして利用されている。−般に、その感磁部であ
る強磁性薄膜によって形成されるセンサパターンはスト
ライプ状のものが用いられており、ストライブに対して
直角に信号磁界が印加された際の抵抗変化を電圧変化と
して読み取っている。Magnetoresistive elements have extremely high magnetic detection sensitivity to magnetic signals, and are therefore used as highly accurate rotation detection or position detection sensors. -Generally, the sensor pattern formed by the ferromagnetic thin film that is the magnetic sensing part is striped, and the change in resistance when a signal magnetic field is applied perpendicular to the stripe is measured by the change in voltage. It is read as.
しかしながら、上記ストライプ状のパターンを用いる磁
気抵抗効果素子を用いた場合には、第3図に示す抵抗変
化の磁場履歴曲線(MR曲線)においてAおよびBの両
面線で示されるような径路が異なる特性となり、ヒステ
リシスが存在するため検出された信号波形に乱れを生ず
るという問題点があった。However, when using a magnetoresistive effect element using the above-mentioned striped pattern, the paths shown by double-sided lines A and B in the magnetic field history curve (MR curve) of resistance change shown in Fig. 3 are different. There is a problem in that the detected signal waveform is disturbed due to the presence of hysteresis.
本発明者は、磁性薄膜における磁区観察を行ない、スト
ライプ状もn性薄膜においては第4図に示すように、反
磁場の影響によってストライプlの幅方向両端部に磁壁
2が生じ三磁区構造が形成され、この磁壁が信号磁界の
変化に伴ない消滅し単磁区構造になることによりヒステ
リシスが発生しているものと考えられた。The present inventor observed magnetic domains in magnetic thin films, and found that in striped n-type thin films, magnetic walls 2 are formed at both ends of the stripe l in the width direction due to the influence of the demagnetizing field, resulting in a three-domain structure, as shown in Figure 4. It was thought that hysteresis was caused by this domain wall disappearing as the signal magnetic field changed, resulting in a single domain structure.
本発明は、ストライブ状の磁性薄膜の磁区構造を安定化
させ、ヒステリシスの少ない磁気抵抗効果素子を提供す
ることを目的とするものである。An object of the present invention is to stabilize the magnetic domain structure of a striped magnetic thin film and provide a magnetoresistive element with less hysteresis.
本発明は、上記目的を達成するために、ストライブ状の
磁性薄膜パターン上の磁壁の発生する位置にディンプル
を形成することにより磁区構造の変化を抑制することを
特徴とするものである。In order to achieve the above object, the present invention is characterized in that changes in the magnetic domain structure are suppressed by forming dimples at positions where domain walls occur on a striped magnetic thin film pattern.
例えば、第1図に示すように幅Ws3のストライブ状の
磁性薄膜上の幅方向両端部の磁壁が発生する位置に、あ
る間隔β4を設けてディンプル5を形成する。このディ
ンプルの形は円または楕円が望ましい。また、磁壁の発
生する位置はストライプ幅の1/20〜115であり、
パターン幅方向端部からディンプルを形成する位置−4
6はL /20〜L 15にすることが望ましく、間隔
iは狭いことが好ましく、−1以下とすることが望まし
い。For example, as shown in FIG. 1, dimples 5 are formed at a certain interval β4 at positions where domain walls are generated at both ends in the width direction on a striped magnetic thin film having a width Ws3. The shape of this dimple is preferably circular or oval. In addition, the position where the domain wall occurs is 1/20 to 115 of the stripe width,
Position-4 where dimples are formed from the edge in the pattern width direction
6 is desirably L/20 to L15, and the interval i is preferably narrow, preferably -1 or less.
形成するディンプルの大きさは10μm以下とすること
が望ましい。The size of the dimples to be formed is preferably 10 μm or less.
本発明の磁気抵抗効果素子の実施例を説明するガラス基
板上に膜厚400人の強磁性体であるパーマロイ薄膜を
形成し、ウニ・ノドエツチング法により、ストライプ幅
し:30μm、ディンプル形成位置−6:5μm、ディ
ンプル間隔l:15μmのストライブをもつ磁気抵抗効
果素子を作成し、MR凸曲線測定したところ、第2図に
示すようにヒステリシスがほとんど認められないもので
あった。Embodiments of the magnetoresistive element of the present invention A permalloy thin film made of a ferromagnetic material having a thickness of 400 mm was formed on a glass substrate, and a stripe width of 30 μm was formed using the sea urchin dot etching method, and dimple formation positions were When a magnetoresistive element with stripes of 6:5 μm and dimple spacing l:15 μm was prepared and an MR convex curve was measured, almost no hysteresis was observed as shown in FIG.
また、磁区観察を行ったところ検出磁界強度、±Hk以
下において三磁区構造であることが確認された。In addition, when magnetic domains were observed, it was confirmed that the structure had a three-domain structure when the detected magnetic field strength was ±Hk or less.
このため、上記形状のストライブ状磁性薄膜を用いて、
磁気抵抗素子を作製すると、ヒステリシスに起因する信
号波形の乱れを低減することが可能となり、優れた特性
の磁気抵抗素子を作製できる。For this reason, using a striped magnetic thin film with the above shape,
When a magnetoresistive element is manufactured, it becomes possible to reduce disturbances in signal waveforms caused by hysteresis, and a magnetoresistive element with excellent characteristics can be manufactured.
本発明の磁気抵抗効果素子は、従来のストライプ形状で
は不安定であった磁区構造をストライプ上にディンプル
を形成することにより安定化し、ヒステリシスを減少さ
せることができるので、出力信号波形の乱れが低減され
検出精度を向上することができる。The magnetoresistive element of the present invention stabilizes the magnetic domain structure, which was unstable in the conventional stripe shape, by forming dimples on the stripe, and can reduce hysteresis, thereby reducing disturbances in the output signal waveform. detection accuracy can be improved.
第1図は本発明におけるストライブ状磁性薄膜の形状を
示す説明図、第2図は本発明の磁気抵抗効果素子のMR
凸曲線第3図は従来の磁気抵抗効果素子のMR凸曲線第
4図は従来のストライブ状磁性薄膜における磁区構造を
示す説明図である。FIG. 1 is an explanatory diagram showing the shape of the striped magnetic thin film in the present invention, and FIG. 2 is an MR diagram of the magnetoresistive element of the present invention.
A convex curve in FIG. 3 is an MR convex curve of a conventional magnetoresistive element. FIG. 4 is an explanatory diagram showing a magnetic domain structure in a conventional striped magnetic thin film.
Claims (3)
部パターン内にディンプルを有することを特徴とする磁
気抵抗効果素子。(1) A magnetoresistive element characterized by having dimples in a magnetically sensitive part pattern made of a ferromagnetic thin film having a magnetoresistive effect.
おいて、ディンプルの形状を円又は楕円とすることを特
徴とする磁気抵抗効果素子。(2) The magnetoresistive element according to claim 1, wherein the dimple has a circular or elliptical shape.
抗効果素子において、ディンプルの大きさを10μm以
下であることを特徴とする磁気抵抗効果素子。(3) A magnetoresistive element according to claim 1 or 2, characterized in that the size of the dimples is 10 μm or less.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1106503A JPH02285274A (en) | 1989-04-26 | 1989-04-26 | Magnetoresistance effect element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1106503A JPH02285274A (en) | 1989-04-26 | 1989-04-26 | Magnetoresistance effect element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02285274A true JPH02285274A (en) | 1990-11-22 |
Family
ID=14435236
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1106503A Pending JPH02285274A (en) | 1989-04-26 | 1989-04-26 | Magnetoresistance effect element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02285274A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0352807U (en) * | 1989-09-22 | 1991-05-22 |
-
1989
- 1989-04-26 JP JP1106503A patent/JPH02285274A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0352807U (en) * | 1989-09-22 | 1991-05-22 |
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