JPH02285274A - Magnetoresistance effect element - Google Patents

Magnetoresistance effect element

Info

Publication number
JPH02285274A
JPH02285274A JP1106503A JP10650389A JPH02285274A JP H02285274 A JPH02285274 A JP H02285274A JP 1106503 A JP1106503 A JP 1106503A JP 10650389 A JP10650389 A JP 10650389A JP H02285274 A JPH02285274 A JP H02285274A
Authority
JP
Japan
Prior art keywords
magnetic
dimples
width
hysteresis
stripe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1106503A
Other languages
Japanese (ja)
Inventor
Hideo Murata
英夫 村田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proterial Ltd
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Priority to JP1106503A priority Critical patent/JPH02285274A/en
Publication of JPH02285274A publication Critical patent/JPH02285274A/en
Pending legal-status Critical Current

Links

Landscapes

  • Measuring Magnetic Variables (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
  • Transmission And Conversion Of Sensor Element Output (AREA)

Abstract

PURPOSE:To reduce not only hysteresis but also the disturbance of an output signal waveform by forming dimples on a stripe to stabilize a magnetic domain structure. CONSTITUTION:A ferromagnetic membrane is formed on a glass substrate and a reluctance effect element is formed by a wet etching method. Then, dimples 5 are formed on a stripe-shaped ferromagnetic membrane at a position where a magnetic wall is generated so as to provide an interval l4 and the shape of each dimple 5 is made circular or oval. Since the position where the magnetic wall is generated is present at a place 1/20 - 1/5 a width Ws3, the distance Wd6 of the dimples 5 from the end part of the membrane in the pattern width direction thereof is set to about 1/20 - 1/5 the width Ws3 and the interval l4 is set to the width Ws3 or less and the size of each dimple 5 is set to about 10mum or less. By this method, the turbulence of a signal waveform caused by hysteresis can be reduced.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、磁気信号を強磁性体薄膜の磁気抵抗効果を利
用して検出する磁気エンコーダー、磁気ヘッド等の磁気
抵抗効果素子に関するものである。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to magnetoresistive elements such as magnetic encoders and magnetic heads that detect magnetic signals using the magnetoresistive effect of a ferromagnetic thin film. .

〔従来の技術〕[Conventional technology]

磁気抵抗効果素子は、磁気信号に対して磁気検出感度が
極めて高いことから高精度の回転検出あるいは位置検出
センサとして利用されている。−般に、その感磁部であ
る強磁性薄膜によって形成されるセンサパターンはスト
ライプ状のものが用いられており、ストライブに対して
直角に信号磁界が印加された際の抵抗変化を電圧変化と
して読み取っている。
Magnetoresistive elements have extremely high magnetic detection sensitivity to magnetic signals, and are therefore used as highly accurate rotation detection or position detection sensors. -Generally, the sensor pattern formed by the ferromagnetic thin film that is the magnetic sensing part is striped, and the change in resistance when a signal magnetic field is applied perpendicular to the stripe is measured by the change in voltage. It is read as.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、上記ストライプ状のパターンを用いる磁
気抵抗効果素子を用いた場合には、第3図に示す抵抗変
化の磁場履歴曲線(MR曲線)においてAおよびBの両
面線で示されるような径路が異なる特性となり、ヒステ
リシスが存在するため検出された信号波形に乱れを生ず
るという問題点があった。
However, when using a magnetoresistive effect element using the above-mentioned striped pattern, the paths shown by double-sided lines A and B in the magnetic field history curve (MR curve) of resistance change shown in Fig. 3 are different. There is a problem in that the detected signal waveform is disturbed due to the presence of hysteresis.

本発明者は、磁性薄膜における磁区観察を行ない、スト
ライプ状もn性薄膜においては第4図に示すように、反
磁場の影響によってストライプlの幅方向両端部に磁壁
2が生じ三磁区構造が形成され、この磁壁が信号磁界の
変化に伴ない消滅し単磁区構造になることによりヒステ
リシスが発生しているものと考えられた。
The present inventor observed magnetic domains in magnetic thin films, and found that in striped n-type thin films, magnetic walls 2 are formed at both ends of the stripe l in the width direction due to the influence of the demagnetizing field, resulting in a three-domain structure, as shown in Figure 4. It was thought that hysteresis was caused by this domain wall disappearing as the signal magnetic field changed, resulting in a single domain structure.

本発明は、ストライブ状の磁性薄膜の磁区構造を安定化
させ、ヒステリシスの少ない磁気抵抗効果素子を提供す
ることを目的とするものである。
An object of the present invention is to stabilize the magnetic domain structure of a striped magnetic thin film and provide a magnetoresistive element with less hysteresis.

〔問題点を解決するための手段〕[Means for solving problems]

本発明は、上記目的を達成するために、ストライブ状の
磁性薄膜パターン上の磁壁の発生する位置にディンプル
を形成することにより磁区構造の変化を抑制することを
特徴とするものである。
In order to achieve the above object, the present invention is characterized in that changes in the magnetic domain structure are suppressed by forming dimples at positions where domain walls occur on a striped magnetic thin film pattern.

例えば、第1図に示すように幅Ws3のストライブ状の
磁性薄膜上の幅方向両端部の磁壁が発生する位置に、あ
る間隔β4を設けてディンプル5を形成する。このディ
ンプルの形は円または楕円が望ましい。また、磁壁の発
生する位置はストライプ幅の1/20〜115であり、
パターン幅方向端部からディンプルを形成する位置−4
6はL /20〜L 15にすることが望ましく、間隔
iは狭いことが好ましく、−1以下とすることが望まし
い。
For example, as shown in FIG. 1, dimples 5 are formed at a certain interval β4 at positions where domain walls are generated at both ends in the width direction on a striped magnetic thin film having a width Ws3. The shape of this dimple is preferably circular or oval. In addition, the position where the domain wall occurs is 1/20 to 115 of the stripe width,
Position-4 where dimples are formed from the edge in the pattern width direction
6 is desirably L/20 to L15, and the interval i is preferably narrow, preferably -1 or less.

形成するディンプルの大きさは10μm以下とすること
が望ましい。
The size of the dimples to be formed is preferably 10 μm or less.

〔実施例〕〔Example〕

本発明の磁気抵抗効果素子の実施例を説明するガラス基
板上に膜厚400人の強磁性体であるパーマロイ薄膜を
形成し、ウニ・ノドエツチング法により、ストライプ幅
し:30μm、ディンプル形成位置−6:5μm、ディ
ンプル間隔l:15μmのストライブをもつ磁気抵抗効
果素子を作成し、MR凸曲線測定したところ、第2図に
示すようにヒステリシスがほとんど認められないもので
あった。
Embodiments of the magnetoresistive element of the present invention A permalloy thin film made of a ferromagnetic material having a thickness of 400 mm was formed on a glass substrate, and a stripe width of 30 μm was formed using the sea urchin dot etching method, and dimple formation positions were When a magnetoresistive element with stripes of 6:5 μm and dimple spacing l:15 μm was prepared and an MR convex curve was measured, almost no hysteresis was observed as shown in FIG.

また、磁区観察を行ったところ検出磁界強度、±Hk以
下において三磁区構造であることが確認された。
In addition, when magnetic domains were observed, it was confirmed that the structure had a three-domain structure when the detected magnetic field strength was ±Hk or less.

このため、上記形状のストライブ状磁性薄膜を用いて、
磁気抵抗素子を作製すると、ヒステリシスに起因する信
号波形の乱れを低減することが可能となり、優れた特性
の磁気抵抗素子を作製できる。
For this reason, using a striped magnetic thin film with the above shape,
When a magnetoresistive element is manufactured, it becomes possible to reduce disturbances in signal waveforms caused by hysteresis, and a magnetoresistive element with excellent characteristics can be manufactured.

〔発明の効果〕〔Effect of the invention〕

本発明の磁気抵抗効果素子は、従来のストライプ形状で
は不安定であった磁区構造をストライプ上にディンプル
を形成することにより安定化し、ヒステリシスを減少さ
せることができるので、出力信号波形の乱れが低減され
検出精度を向上することができる。
The magnetoresistive element of the present invention stabilizes the magnetic domain structure, which was unstable in the conventional stripe shape, by forming dimples on the stripe, and can reduce hysteresis, thereby reducing disturbances in the output signal waveform. detection accuracy can be improved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明におけるストライブ状磁性薄膜の形状を
示す説明図、第2図は本発明の磁気抵抗効果素子のMR
凸曲線第3図は従来の磁気抵抗効果素子のMR凸曲線第
4図は従来のストライブ状磁性薄膜における磁区構造を
示す説明図である。
FIG. 1 is an explanatory diagram showing the shape of the striped magnetic thin film in the present invention, and FIG. 2 is an MR diagram of the magnetoresistive element of the present invention.
A convex curve in FIG. 3 is an MR convex curve of a conventional magnetoresistive element. FIG. 4 is an explanatory diagram showing a magnetic domain structure in a conventional striped magnetic thin film.

Claims (3)

【特許請求の範囲】[Claims] (1)磁気抵抗効果を有する強磁性体薄膜より成る感磁
部パターン内にディンプルを有することを特徴とする磁
気抵抗効果素子。
(1) A magnetoresistive element characterized by having dimples in a magnetically sensitive part pattern made of a ferromagnetic thin film having a magnetoresistive effect.
(2)特許請求の範囲第1項記載の磁気抵抗効果素子に
おいて、ディンプルの形状を円又は楕円とすることを特
徴とする磁気抵抗効果素子。
(2) The magnetoresistive element according to claim 1, wherein the dimple has a circular or elliptical shape.
(3)特許請求の範囲第1項または第2項記載の磁気抵
抗効果素子において、ディンプルの大きさを10μm以
下であることを特徴とする磁気抵抗効果素子。
(3) A magnetoresistive element according to claim 1 or 2, characterized in that the size of the dimples is 10 μm or less.
JP1106503A 1989-04-26 1989-04-26 Magnetoresistance effect element Pending JPH02285274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1106503A JPH02285274A (en) 1989-04-26 1989-04-26 Magnetoresistance effect element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1106503A JPH02285274A (en) 1989-04-26 1989-04-26 Magnetoresistance effect element

Publications (1)

Publication Number Publication Date
JPH02285274A true JPH02285274A (en) 1990-11-22

Family

ID=14435236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1106503A Pending JPH02285274A (en) 1989-04-26 1989-04-26 Magnetoresistance effect element

Country Status (1)

Country Link
JP (1) JPH02285274A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0352807U (en) * 1989-09-22 1991-05-22

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0352807U (en) * 1989-09-22 1991-05-22

Similar Documents

Publication Publication Date Title
JP3487452B2 (en) Magnetic detector
JPH11304413A (en) Magnetism detecting device
JPS58154612A (en) Detector of displacement quantity
CN112305471A (en) Magnetic field sensor, system and oblique incidence deposition manufacturing method
JPH02285274A (en) Magnetoresistance effect element
JP2000018967A (en) Magnetic detector
JPH0151127B2 (en)
JP2005069744A (en) Magnetic detection element
JP3036274B2 (en) Magnetic encoder
JPH06147816A (en) Angle sensor
JPH02285273A (en) Magnetoresistance effect element
JPH04282480A (en) Magnetic sensor
JPH073650Y2 (en) Magnetoresistive element
JPH02117183A (en) Magnetoresistance effect device
JPS625284B2 (en)
JP3643222B2 (en) Magnetoresistive element and magnetic linear measuring device
JP2005043209A (en) Magnetic detection device
JP2598782B2 (en) Magnetic encoder device
JPH027481A (en) Magnetoresistance effect element
JP2929714B2 (en) Angle detector
JPH03282368A (en) Magnetic sensor
JPH0618279A (en) Detecting apparatus for position
JPH03148187A (en) Magnetoresistance effect element
JPH04286379A (en) Manufacture of magnetic sensor
JP3182858B2 (en) Ferromagnetic magnetoresistive element