JPH02284784A - Laser processing machine - Google Patents
Laser processing machineInfo
- Publication number
- JPH02284784A JPH02284784A JP1101702A JP10170289A JPH02284784A JP H02284784 A JPH02284784 A JP H02284784A JP 1101702 A JP1101702 A JP 1101702A JP 10170289 A JP10170289 A JP 10170289A JP H02284784 A JPH02284784 A JP H02284784A
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- laser
- laser processing
- aperture
- processing machine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010521 absorption reaction Methods 0.000 claims abstract description 15
- 230000002745 absorbent Effects 0.000 claims description 8
- 239000002250 absorbent Substances 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 9
- 229910052582 BN Inorganic materials 0.000 abstract description 8
- 239000011248 coating agent Substances 0.000 abstract description 7
- 238000001816 cooling Methods 0.000 abstract description 7
- 238000000576 coating method Methods 0.000 abstract description 6
- 230000001680 brushing effect Effects 0.000 abstract description 2
- 238000007598 dipping method Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 239000007921 spray Substances 0.000 abstract description 2
- 239000011358 absorbing material Substances 0.000 abstract 2
- 238000003754 machining Methods 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- GVTRYBJMAVPTHT-UHFFFAOYSA-N 6-[2-[3-fluoro-5-[3-(methylaminomethyl)phenyl]phenyl]ethyl]-4-methylpyridin-2-amine Chemical compound CNCc1cccc(c1)-c1cc(F)cc(CCc2cc(C)cc(N)n2)c1 GVTRYBJMAVPTHT-UHFFFAOYSA-N 0.000 description 1
- 101100313164 Caenorhabditis elegans sea-1 gene Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/005—Diaphragms
- G02B5/006—Diaphragms cooled
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Lasers (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
この発明は、レーザ加工機に係り、更に詳細にはレーザ
ビームが直接あたる部分に表面処理を施してレーザビー
ムを吸収し、熱伝導を良好にして冷ＩＪ＋効果を高めた
レーザ加工機に関する。[Detailed Description of the Invention] [Objective of the Invention] (Industrial Application Field) The present invention relates to a laser processing machine, and more specifically to a laser processing machine that absorbs the laser beam by applying surface treatment to the part directly hit by the laser beam. , relates to a laser processing machine with good heat conduction and enhanced cold IJ+ effect.
（従来の技術）
従来、レーザ加工機はレーザ発振器で発揚されたレーザ
ビームをレーザ加工本体内に設けられた集光レンズで集
光し、この集光レンズで集光されたレーザビームを加工
すべきワークの表面に照射してレーザ加工が行なわれて
いる。(Prior art) Conventionally, a laser processing machine focuses a laser beam emitted by a laser oscillator using a condensing lens provided inside the laser processing body, and processes the laser beam focused by this condensing lens. Laser processing is performed by irradiating the surface of the workpiece to be processed.
このシー１フ’加工機において、レーザビームが直接あ
たるレーザ発振器内のアバーヂ１１やパワーセンサ、あ
るいはレーザ発振器外のシャッタさらにはレーザ加工本
体内の集光レンズの近傍に設けられたアバーヂＶには、
例えば１０．６μ■のレーザビームに対して吸収のよい
カーボンライジングあるいはしラミックス溶射などが施
されてレーザご一ムのエネルギーを奮って冷却効果を与
えていた。In this Sea 1 F' processing machine, the averge 11 and power sensor inside the laser oscillator that the laser beam directly hits, the shutter outside the laser oscillator, and the averge V installed near the condensing lens inside the laser processing main body are ,
For example, a 10.6 μι laser beam was treated with highly absorbing carbon rising or lamic spraying, which used the energy of the laser beam to provide a cooling effect.
（発明が解決しようとする課題）
ところで、上述した従来のカーボンライジングあるいは
セラミックス溶射などを前記各部品に施したものでは赤
外域での吸収は確かに良好であるが、１０．６μｍとい
う遠赤域ではまだ不充分で、より吸収が良くて、熱伝導
のよい吸収剤が望まれていた。(Problem to be Solved by the Invention) By the way, the above-mentioned conventional carbon rising or ceramic spraying applied to each of the above-mentioned parts certainly has good absorption in the infrared region, but in the far-infrared region of 10.6 μm. However, this was still insufficient, and there was a need for an absorbent with better absorption and thermal conductivity.
この発明の目的は、上記事情に柘みて、アパーチャ、パ
ワセンサ、シャッタのうち１つの表面に吸収率が良くて
、熱伝導のよい吸収剤特に窒化ホウ素を］−アイングし
、従来よりも冷却効果を高めたレーザ加工機を提供する
ことにある。In view of the above-mentioned circumstances, an object of the present invention is to apply an absorbent material with high absorption rate and good thermal conductivity, especially boron nitride, to the surface of one of the aperture, power sensor, and shutter to achieve a cooling effect better than that of the conventional method. Our objective is to provide an improved laser processing machine.
〔発明の構成］
（課題を解決するための手段）
上記目的を達成するために、この発明は、レーザ発振器
で発振されたレーザビームをレーザ加工本体内に設けら
れた集光レンズで集光しワークに照射してレーザ加■を
行なうレーザ加工機にして、前記レーザ発振器内に設け
られているアパーチャ、パワーセンサ、レーザ発揚器外
に設りられているシャッタおよび前記集光レンズの近傍
に設けられているアパーチャのうち、少なくとも１つの
表面に吸収率がよくかつ熱伝導も良好な吸収剤をコーデ
ィングしてレーザ加工機を構成した。[Structure of the Invention] (Means for Solving the Problem) In order to achieve the above object, the present invention condenses a laser beam oscillated by a laser oscillator with a condensing lens provided in a laser processing main body. A laser processing machine that performs laser processing by irradiating a workpiece, and an aperture provided in the laser oscillator, a power sensor, a shutter provided outside the laser oscillator, and a laser beam provided in the vicinity of the condenser lens. A laser processing machine was constructed by coating at least one surface of the aperture with an absorbent having good absorption rate and good heat conduction.
（作用）
この発明のレーザ加Ｉｎを採用することにより、レーザ
発振器内に設けられているアパーチャやパワセンサある
いはレーザ発Ｊｉ器外に設［：ｌられているシャッタ、
さらには集光レンズの近傍に設けられているアパーチャ
のうち、少なくとも１つの表面に吸収率が良くて、熱伝
導の良好な吸収剤をコーティングすることによって、レ
ーザビームを吸収し、かつ熱伝導が良くなり、冷却効果
が従来よりも高められる。(Function) By employing the laser input of the present invention, the aperture and power sensor provided within the laser oscillator or the shutter provided outside the laser oscillator,
Furthermore, by coating at least one surface of the aperture provided near the condensing lens with an absorbent that has good absorption rate and good heat conduction, it is possible to absorb the laser beam and improve heat conduction. The cooling effect is improved compared to before.
（実施例）
以下、この発明の実施例を図面に基づいて詳細に説明す
る。(Example) Hereinafter, an example of the present invention will be described in detail based on the drawings.
第１図を参照するに、レーザ加ＩＩＩにはレーザビーム
Ｌ Ｂを発振させるための例えば炭酸ガスによるレーザ
発振器３とレーザ加工本体５が偏えられている。レーザ
発振器３は共振器７と、この共振器７の両側に出力ミラ
ー９、リヤミラー１１などを備えている。Referring to FIG. 1, a laser oscillator 3 using, for example, carbon dioxide gas for oscillating a laser beam LB and a laser processing main body 5 are biased to the laser processing III. The laser oscillator 3 includes a resonator 7, and an output mirror 9, a rear mirror 11, etc. on both sides of the resonator 7.
前記共振器７は平板状の陽極１３と、ある一定の間隙を
持って対向した位首に複数配列された陰極１５などから
構成されている。複数の陰極１５は、各陰［ｉ１５間を
絶縁する放電壁１７に取付【）られている。さらに、放
電壁１７には安定抵抗１９が設けられている。The resonator 7 is composed of a flat anode 13, and a plurality of cathodes 15 arranged in positions facing each other with a certain gap between them. A plurality of cathodes 15 are attached to a discharge wall 17 that insulates between each cathode. Furthermore, the discharge wall 17 is provided with a stabilizing resistor 19 .
前記陽極１３および陰極１５はぞれぞれ図示省略の高圧
電源装置に接続されて、陽極１３と陰極１５との間隙に
放電領域が形成される。The anode 13 and the cathode 15 are each connected to a high voltage power supply (not shown), and a discharge region is formed in the gap between the anode 13 and the cathode 15.
に記構成により、出力ミラー９とリヤミラー１１との間
でレーザビームＬ Ｂが反射されると共に、レーザビー
ムＩＢは第１図において陽極１３と陰？！ｉ１５との間
の放電領域を通って矢印のごとく出力ミラー９かｊうレ
ーザ加工本体５へ出力されることになる。With the configuration described above, the laser beam LB is reflected between the output mirror 9 and the rear mirror 11, and the laser beam IB is reflected between the anode 13 and the cathode in FIG. ! It passes through the discharge area between i15 and is output to the output mirror 9 and the laser processing main body 5 as shown by the arrow.
前記リヤミラー１１の内側（第１図において右側）には
アパーチャ２１が設けられており、このアパーチャ２１
でレーザビーｌいｌの境界条ｆ１が決められるようにな
っている。また、リヤミラー１１の近傍にはパワーセン
サ２３が設けられており、このパワーセンサ２３でレー
ザビームｌ−Ｂの出力が測定されるようになっている。An aperture 21 is provided inside the rear mirror 11 (on the right side in FIG. 1).
The boundary line f1 of the laser beam can be determined by the following. Further, a power sensor 23 is provided near the rear mirror 11, and the power sensor 23 measures the output of the laser beam 1-B.
前記レーザ発（辰器３外ぐある出力ミラー９の第１図に
おいて右側にはシトツタ２５が設けられており、このシ
ャッタ２５でレーザビームＬ Ｂがレーザ加工本体５側
へ出力されるのを遮断するようになっている。A shutter 25 is provided on the right side of the output mirror 9 located outside the laser beam 3 in FIG. 1, and this shutter 25 blocks the laser beam LB from being output to the laser processing main body 5 side. It is supposed to be done.
前記レーザ加工本体５にはレーザ発振器３で発振された
ｌノーザビームＬＢの光路を変更させるペンドミラー２
７がレーザ発１辰器３の前方（第１図において右方）に
配置されている。このペンドミラー２７で反射されたレ
ーザビームＩＢを集光させるための集光レンズ２９がペ
ンドミラー２７の下方に配置されている。この集光レン
ズ２９の近傍であるト方位置にはアパーチャ３１が設け
られていて、レーザビームＩＢの境界条件が決められる
ようになっている。The laser processing main body 5 includes a pend mirror 2 that changes the optical path of the norther beam LB oscillated by the laser oscillator 3.
7 is placed in front of the laser emitting device 3 (on the right side in FIG. 1). A condensing lens 29 for condensing the laser beam IB reflected by the pend mirror 27 is arranged below the pend mirror 27. An aperture 31 is provided in the vicinity of the condensing lens 29 in the to direction, so that the boundary conditions of the laser beam IB can be determined.
前記集光レンズ２９の下方には例えばＸ軸方向（第１図
において左右方向）、Ｙ軸方向く第１図において紙面に
対し直交する方向）へ移動自在なワークテーブル３３が
設けられており、このワ−りｊ−プル３３１に加ニー４
べきワークＷが載置される。A work table 33 is provided below the condenser lens 29 and is movable, for example, in the X-axis direction (left-right direction in FIG. 1) and the Y-axis direction (direction perpendicular to the plane of the paper in FIG. 1). Knee 4 to this work j-pull 331
A workpiece W to be processed is placed.
上記構成により、レーザ発娠器３で発振されたレーザビ
ームＬ Ｂはベンドミラー２７を経て集光レンズ２９に
集光される。さらに、集光レンズ２９で集光されたレー
ザビームＬ Ｂはワークテーブル３３上に載置されたワ
ークＷに照射されかつワークテーブル３３をＸ、Ｙ輪方
向へ適宜移動せしめることにより所望のレーザ加■が行
なわれることとなる。With the above configuration, the laser beam LB oscillated by the laser oscillator 3 is focused on the condenser lens 29 via the bend mirror 27. Further, the laser beam L B focused by the condensing lens 29 is irradiated onto the work W placed on the work table 33, and the work table 33 is appropriately moved in the X and Y directions to perform desired laser processing. ■ will be carried out.
レーザ発摂器３で発振されたレーザビームｌｆ３が集光
レンズ２つで集光されてワークＷに照射される経路にお
いて、例えば１０．６μｍのレーザビームＬ Ｂが直接
当たる部品として、萌記アパーヂャ２１．パワーセンサ
２３．シャッタ２５およびアパーチャ３１などがある。In the path where the laser beam lf3 oscillated by the laser oscillator 3 is condensed by two condensing lenses and irradiated onto the workpiece W, the Moeki aperture is used as a component that is directly hit by the laser beam LB of, for example, 10.6 μm. 21. Power sensor 23. There are a shutter 25, an aperture 31, and the like.
これらの部品の表面には従来、カーボンライジングある
いはセラミックス溶射などが施されて、レーザビームＬ
Ｂの吸収を行なっているが、満？すべきらのでなかった
。そこで、各種の実験を行なった結果、一般的に固体潤
滑剤として利用されている材料が、前記各部品の表面に
残留しても問題が少ないことから、それに着目して、各
種の固体潤滑剤のレーザビーム吸収性を調べたところ、
吸収率がよくて熱伝導の良好な吸収剤として特に窒化ホ
ウ素（ＢＮ）が極めて大ぎなレーザビームｉ Ｂを吸収
すると共に、熱伝導が良好であることを確かめた。Conventionally, the surfaces of these parts are coated with carbon rising or ceramic spraying, and the laser beam L
I am absorbing B, but is it full? It wasn't the right thing to do. Therefore, as a result of various experiments, we found that there are few problems even if materials that are generally used as solid lubricants remain on the surfaces of the above-mentioned parts, so we focused on this and developed various solid lubricants. When we investigated the laser beam absorption of
It has been confirmed that boron nitride (BN), an absorbent with good absorption rate and good thermal conductivity, can absorb an extremely large laser beam iB and has good thermal conductivity.
すなわち、窒化ホウ素（ＢＮ）と従来のカーボライジン
グとにおいて吸収率と熱伝導性は下表のとおりである。That is, the absorption rate and thermal conductivity of boron nitride (BN) and conventional carbonization are as shown in the table below.
夷
而して、この窒化ホウ素を前記各部品の表面にコーティ
ングしたところ、レーザビームＬＢの吸収率が良く、熱
伝導が良好となり、従来と比べて冷却効果が高められた
。When this boron nitride was coated on the surface of each of the parts, the absorption rate of the laser beam LB was good, the heat conduction was good, and the cooling effect was enhanced compared to the conventional one.
前記各各部品に窒化ホウ素（ＢＮ）を］−ティングする
手段としては例えばエアスプレィで行なうのがよいが、
さらには浸漬や刷毛塗りを行なっても構わない。また、
窒化ホウ素は白色の粉末であるので、」−ティングした
後、何ら処理をする必要がなく取扱いが容易であると共
に作業環境が従来のカーボライジングを用いる場合など
に比べて非常に良好である。As a means of applying boron nitride (BN) to each of the above-mentioned parts, it is preferable to use air spray, for example.
Furthermore, dipping or brushing may be performed. Also,
Since boron nitride is a white powder, there is no need for any treatment after nitride, making it easy to handle and providing a much better working environment than when conventional carbonizing is used.
なお、窒化ホウ素の伯にも、レーザビーム吸収性の高い
材料が種々存在し、例えばアルミナシリコンカーバイド
、シリコンナイトライドやＷ ８２などが挙げられるが
、これらは窒化ホウ素に比べて熱伝導性が落らるが、こ
れらの材料であっても構わない。Note that there are various materials for boron nitride that have high laser beam absorption properties, such as alumina silicon carbide, silicon nitride, and W82, but these have lower thermal conductivity than boron nitride. However, any of these materials may be used.
また、窒化ホウ素のコーティング剤はその粒径が小さい
ほどレーザビームの吸収性がよいので最適である。Further, the boron nitride coating agent is optimal because the smaller the particle size, the better the absorption of the laser beam.
なお、この発明は前述した実施例に限定されることなく
、適宜の変更を行なうことにより、その他の態様で実施
し得るものである。例えば本実施例では３軸直交型レ−
Ｉｆ発揚器を用いたレーザ加工機について説明したが、
高速軸交流型や２軸直交型のレーザ発（辰器を用いたレ
ーザ加工機であっても構わない。Note that the present invention is not limited to the embodiments described above, and can be implemented in other embodiments by making appropriate changes. For example, in this embodiment, a three-axis orthogonal
I explained a laser processing machine using an If launcher, but
A high-speed axis AC type or a two-axis orthogonal type laser processing machine (a laser processing machine using a cylindrical machine may also be used).
［発明の効果〕
以上のごとき実施例の説明より理解されるように、この
発明によれば、レーザ加工機に、１３いて、７バーチヤ
、パワーセンサ、シャッタのうち少なくとも１つの表面
に吸収が良くて、熱伝導性が良好な吸収剤をコーティン
グしたことにより、これらの部品はレーザビームをよく
吸収すると共に熱伝導性がよくなり、従来に比べて冷却
効果を高めることができる。特に、シャッタの表面に前
記吸収剤をコーティングすると受光部の寿命を非常にの
ばすことができる。[Effects of the Invention] As can be understood from the above description of the embodiments, according to the present invention, in a laser processing machine, at least one surface of the 13 vertices, the power sensor, and the shutter has good absorption. By coating with an absorbent having good thermal conductivity, these parts can absorb the laser beam well and have good thermal conductivity, making it possible to improve the cooling effect compared to the conventional method. In particular, if the surface of the shutter is coated with the absorbent, the life of the light receiving section can be greatly extended.
第１図はこの発明を実施する一実施例のレーザ加工機の
概略図である。
１・・・レーザ加工機
３・・・レーザ発概器
５・・・レーザ加工本体
９−・・出力ミラー
１１・・・リヤミラー
２１・・・アバーヂ１１
２３・・・バワーセンザ
２５・・・シャッター
２９・・・集光レンズ
３１・・・アパーチｉ１FIG. 1 is a schematic diagram of a laser processing machine according to an embodiment of the present invention. 1...Laser processing machine 3...Laser oscillator 5...Laser processing main body 9-...Output mirror 11...Rear mirror 21...Averge 11 23...Power sensor 25...Shutter 29 ...Condensing lens 31...Aperture i1
Claims (1)
体内に設けられた集光レンズで集光しワークに照射して
レーザ加工を行なうレーザ加工機にして、前記レーザ発
振器内に設けられているアパーチャ、パワーセンサ、レ
ーザ発振器外に設けられているシャッタおよび前記集光
レンズの近傍に設けられているアパーチャのうち、少な
くとも１つの表面に吸収率がよくかつ熱伝導も良好な吸
収剤をコーティングしてなることを特徴とするレーザ加
工機。A laser processing machine that performs laser processing by condensing a laser beam oscillated by a laser oscillator with a condensing lens provided in a laser processing main body and irradiating it onto a workpiece, an aperture provided in the laser oscillator; At least one surface of the power sensor, a shutter provided outside the laser oscillator, and an aperture provided near the condensing lens is coated with an absorbent having good absorption rate and good heat conduction. A laser processing machine characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1101702A JP2733297B2 (en) | 1989-04-24 | 1989-04-24 | Laser oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1101702A JP2733297B2 (en) | 1989-04-24 | 1989-04-24 | Laser oscillator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02284784A true JPH02284784A (en) | 1990-11-22 |
| JP2733297B2 JP2733297B2 (en) | 1998-03-30 |
Family
ID=14307647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1101702A Expired - Lifetime JP2733297B2 (en) | 1989-04-24 | 1989-04-24 | Laser oscillator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2733297B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04251687A (en) * | 1991-01-23 | 1992-09-08 | Fanuc Ltd | Laser beam controller |
| JPH0821921A (en) * | 1994-07-06 | 1996-01-23 | Sumitomo Osaka Cement Co Ltd | Method and device for working curved surface at front end of optical fiber |
| JP2013081961A (en) * | 2011-10-06 | 2013-05-09 | Disco Corp | Ablation method for passivation film-laminated substrate |
| JP2013081950A (en) * | 2011-10-06 | 2013-05-09 | Disco Corp | Ceramic substrate ablation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5879787A (en) * | 1981-11-06 | 1983-05-13 | Olympus Optical Co Ltd | Variable device for laser output |
| JPS62234384A (en) * | 1986-04-04 | 1987-10-14 | Mitsubishi Electric Corp | Laser apparatus |
| JPS6471192A (en) * | 1987-09-11 | 1989-03-16 | Komatsu Mfg Co Ltd | Laser output control device |
-
1989
- 1989-04-24 JP JP1101702A patent/JP2733297B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5879787A (en) * | 1981-11-06 | 1983-05-13 | Olympus Optical Co Ltd | Variable device for laser output |
| JPS62234384A (en) * | 1986-04-04 | 1987-10-14 | Mitsubishi Electric Corp | Laser apparatus |
| JPS6471192A (en) * | 1987-09-11 | 1989-03-16 | Komatsu Mfg Co Ltd | Laser output control device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04251687A (en) * | 1991-01-23 | 1992-09-08 | Fanuc Ltd | Laser beam controller |
| JPH0821921A (en) * | 1994-07-06 | 1996-01-23 | Sumitomo Osaka Cement Co Ltd | Method and device for working curved surface at front end of optical fiber |
| JP2013081961A (en) * | 2011-10-06 | 2013-05-09 | Disco Corp | Ablation method for passivation film-laminated substrate |
| JP2013081950A (en) * | 2011-10-06 | 2013-05-09 | Disco Corp | Ceramic substrate ablation method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2733297B2 (en) | 1998-03-30 |
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