JPH02284421A - Semiconductor manufacturing device - Google Patents
Semiconductor manufacturing deviceInfo
- Publication number
- JPH02284421A JPH02284421A JP10630189A JP10630189A JPH02284421A JP H02284421 A JPH02284421 A JP H02284421A JP 10630189 A JP10630189 A JP 10630189A JP 10630189 A JP10630189 A JP 10630189A JP H02284421 A JPH02284421 A JP H02284421A
- Authority
- JP
- Japan
- Prior art keywords
- foreign matter
- brush
- gas
- wafer
- capillary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000007788 liquid Substances 0.000 claims abstract description 7
- 239000011148 porous material Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000007664 blowing Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 15
- 239000007789 gas Substances 0.000 description 12
- 239000010409 thin film Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 210000004209 hair Anatomy 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000012212 insulator Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 210000000050 mohair Anatomy 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Brushes (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning In General (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体製造装置に関するもので、特に半導体
集積回路で用いられている金属薄膜あるいは絶縁体薄膜
形成の際に、ウェハ上に発生する異物の除去装置に関す
るものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to semiconductor manufacturing equipment, and in particular to the treatment of foreign particles generated on wafers during the formation of metal thin films or insulator thin films used in semiconductor integrated circuits. This invention relates to a removal device.
第２図は半導体製造工程の特に金属薄膜あるいは絶縁体
薄膜形成工程においてウェハ上に付着しｔコ異物を取り
除〈従来の異物除去装置の主たる構造を示した平面図で
ある。図において（５）はウェハ、（６）はブラシ、（
７）は純水噴出ノズルである。上記金属薄膜は、主にゲ
ート電極に用いられているＷＳｉ。FIG. 2 is a plan view showing the main structure of a conventional foreign matter removal apparatus for removing foreign matter that adheres to a wafer during the semiconductor manufacturing process, particularly the process of forming a metal thin film or an insulating thin film. In the figure, (5) is the wafer, (6) is the brush, (
7) is a pure water jet nozzle. The metal thin film mentioned above is WSi, which is mainly used for gate electrodes.
やＭＯＳｉ２、絶縁体薄膜はＳ ｉ ３Ｎ、、５ｉｎ２
、ＰＳＧ、及びＢＰＳＧである。or MOSi2, insulator thin film is Si 3N, 5in2
, PSG, and BPSG.
次に動作について説明する・ウェハ（５）を異物除去装
置内に搬送し、純水を吹きつけなからウェハ（５）を回
転させる。モヘヤで構成されたブラシ（６）がローラ状
に回転しながらウェハ（５）表面の異物を擦り取る。擦
り取られｔコ異物は純水と共に流し落とされる。次に、
ウェハ（５）表面からブラシ（６）を離して純水を止め
、ウェハ（５）をスピン乾燥させる。以上のような工程
により、ウェハ（５）表面の異物を除去することができ
る。Next, the operation will be explained. The wafer (5) is transported into the foreign matter removal device, and the wafer (5) is rotated while being sprayed with pure water. A brush (6) made of mohair rotates like a roller and scrapes off foreign matter on the surface of the wafer (5). The scraped foreign matter is washed away with pure water. next,
The brush (6) is removed from the surface of the wafer (5), the pure water is stopped, and the wafer (5) is spin-dried. Through the steps described above, foreign matter on the surface of the wafer (5) can be removed.
従来の異物除去装置は以上のように構成されてい１この
で、半導体デバイスの集積度が向上するに従ってパター
ンの微細化は進み、そのパターンの最小寸法が１μｍ以
下にもなってくると、形成された溝あるいはエツジ部に
付着した異物によって所望のデバイスが形成できないた
め、付着した異物ヲ何らかの方法で取り除く必要がある
。しかし従来用いられてきた、ブラシスクラバーと呼ば
れる異物除去装置のブラシの細毛の直径は１００μｍ以
上あり、比較的段差の小さいウェハ表面に付着した異物
や数μｍ以」二の比較的大きな異物は除去できるが、１
μｍ以下の微細な溝やエツジ部に付着した異物を除去す
ることはできない。Conventional foreign matter removal equipment is constructed as described above.1 As the degree of integration of semiconductor devices improves, patterns become finer and the minimum dimension of the patterns becomes less than 1 μm. Since a desired device cannot be formed due to foreign matter adhering to the grooves or edges, it is necessary to remove the adhering foreign matter by some method. However, the diameter of the fine bristles of the brush of the conventional foreign matter removal device called a brush scrubber is 100 μm or more, and it can remove foreign matter attached to the wafer surface with relatively small steps and relatively large foreign matter of several μm or more. But 1
It is not possible to remove foreign matter adhering to minute grooves or edges of micrometers or less.
この発明は上記のような問題点を解決するためになされ
たもので、ウェハ上に微細なパターンを再現性良く形成
するための異物除去装置を提供するものである。The present invention was made to solve the above-mentioned problems, and provides a foreign matter removal device for forming fine patterns on a wafer with good reproducibility.
この発明に係る異物除去装置は、ブラシの細毛の先端部
分にガス又は液体を噴出させる１こめの細孔を具備しｔ
こものである。The foreign matter removal device according to the present invention is provided with one pore for ejecting gas or liquid at the tip of the fine bristles of the brush.
It's a small thing.
〔作用〕
この発明においては、異物除去装置のブラシの細毛の先
端部に設けられ１こ細孔よりガス又は液体を噴出させる
ことができるため、ブラシの細毛の直径よりも微細なパ
ターン、すなわちブラシの細毛の入り込むことができな
い微細な溝やエツジに付着し１こ異物を、ガス又は液体
により吹き跳ばす、若しくは反応させることにより除去
する。[Function] In this invention, gas or liquid can be ejected from the single pore provided at the tip of the fine bristles of the brush of the foreign matter removal device, so that a pattern finer than the diameter of the fine bristles of the brush, that is, the brush Foreign matter that adheres to minute grooves and edges that cannot be penetrated by fine hair is removed by blowing it away with gas or liquid, or by causing a reaction.
以下、この発明の一実施例を図について説明する０
第１図は異物除去装置のブラシの細毛の構造を示す断面
図である。図において、（１）はＮ２ガス、（２）はブ
ラシの細毛、（３）はパターン、（４）は異物である。Hereinafter, one embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a sectional view showing the structure of the fine bristles of a brush of a foreign matter removing device. In the figure, (1) is N2 gas, (2) is the fine hair of a brush, (3) is a pattern, and (4) is a foreign object.
この発明が第２図の従来例の異物除去装置と異なる点は
、ブラシの細毛（２）の先端部分にＮ２ガス（１）を噴
出する細孔を設けた点である。細孔より噴出するものは
Ａｒガスのような不活性ガスでも良いし、異物と反応性
を有するガスでも良い。また、液体でも良い。The present invention differs from the conventional foreign matter removing device shown in FIG. 2 in that a fine hole through which N2 gas (1) is ejected is provided at the tip of the fine bristles (2) of the brush. The gas ejected from the pores may be an inert gas such as Ar gas, or a gas that is reactive with foreign matter. Also, it may be a liquid.
次に動作について説明する。細孔の直径はブラシの細毛
（２）の直径よりも極端に小さいため、Ｎ２ガス（１）
はブラシの細孔（２）よりジエツ１〜状に噴き出す。Next, the operation will be explained. The diameter of the pores is extremely smaller than the diameter of the fine bristles (2) of the brush, so N2 gas (1)
is ejected from the pores (2) of the brush in the form of jets.
パターン（３）のエツジ部に付着しｔこ異物（４）を取
り除く揚台、第１図に示すごとく噴き出したＮ２ガス（
１）は、ブラシの細毛（２）が入り込むことのできない
溝部やエツジ部にも入り込めるため、従来のブラシスク
ラバーでは取り除くことのできなかった異物（４）を取
り除くことができる。更に、このブラシの細毛（２）は
従来のブラシスクラバーと同様にウェハ（５）上で回転
しなからウェハ（５）表面の異物（４）を擦り取ること
もできる。すなわち、従来の装置で除去することができ
る異物（４）に加えて、微細な溝やエツジに付着しＴこ
異物（４）をも除去することを可能にするものである。As shown in Figure 1, the N2 gas (
1) can get into the grooves and edges that the fine bristles (2) of the brush cannot get into, so it can remove foreign matter (4) that could not be removed with conventional brush scrubbers. Furthermore, the fine bristles (2) of this brush can also scrub foreign matter (4) from the surface of the wafer (5) while rotating on the wafer (5), similar to a conventional brush scrubber. That is, in addition to the foreign matter (4) that can be removed with conventional devices, it is also possible to remove foreign matter (4) that adheres to minute grooves and edges.
この発明は異物除去装置のブラシの細毛の先端部分にガ
ス又は液体を噴出させるための細孔を設けることを特徴
とし１こもので、これにより微細なパターンを持つウェ
ハに付着し１こ異物を除去することができるｔこめ、微
細なパターンを再現性良く形成することを可能とする。This invention is characterized in that the tip of the fine bristles of the brush of the foreign matter removal device is provided with pores for ejecting gas or liquid, thereby removing foreign matter that adheres to a wafer with a fine pattern. This makes it possible to form fine patterns with good reproducibility.
第１図はこの発明に係る半導体製造装置の一実施例によ
る異物除去装置のブラシの細毛の構造を示す断面図、第
２図は従来の異物除去装置の主たる構造を示す平面図で
ある・
図において、（１）はＮ２ガス、（２）はブラシの細毛
、（３）はパターン、（４）は異物、（５月よウェハ、
（６）はブラシ、（７）は純水噴出しノズルである。FIG. 1 is a sectional view showing the structure of the fine bristles of a brush of a foreign matter removing device according to an embodiment of the semiconductor manufacturing apparatus according to the present invention, and FIG. 2 is a plan view showing the main structure of a conventional foreign matter removing device. , (1) is N2 gas, (2) is the fine hair of the brush, (3) is the pattern, (4) is the foreign object, (May wafer,
(6) is a brush, and (7) is a pure water jet nozzle.
Claims (1)
細毛の構造として、上記細毛の先端部分にガス又は液体
を噴出させるための細孔を具備することを特徴とする半
導体製造装置。A semiconductor manufacturing device characterized in that the structure of the fine bristles of a brush for a device for removing foreign matter on a wafer in semiconductor manufacturing is provided with pores for ejecting gas or liquid at the tips of the fine bristles.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10630189A JPH02284421A (en) | 1989-04-26 | 1989-04-26 | Semiconductor manufacturing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10630189A JPH02284421A (en) | 1989-04-26 | 1989-04-26 | Semiconductor manufacturing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02284421A true JPH02284421A (en) | 1990-11-21 |
Family
ID=14430196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10630189A Pending JPH02284421A (en) | 1989-04-26 | 1989-04-26 | Semiconductor manufacturing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02284421A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5558111A (en) * | 1995-02-02 | 1996-09-24 | International Business Machines Corporation | Apparatus and method for carrier backing film reconditioning |
-
1989
- 1989-04-26 JP JP10630189A patent/JPH02284421A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5558111A (en) * | 1995-02-02 | 1996-09-24 | International Business Machines Corporation | Apparatus and method for carrier backing film reconditioning |
| US5618354A (en) * | 1995-02-02 | 1997-04-08 | International Business Machines Corporation | Apparatus and method for carrier backing film reconditioning |
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