JP2985396B2 - Post-treatment method after dry etching - Google Patents
Post-treatment method after dry etchingInfo
- Publication number
- JP2985396B2 JP2985396B2 JP3201298A JP20129891A JP2985396B2 JP 2985396 B2 JP2985396 B2 JP 2985396B2 JP 3201298 A JP3201298 A JP 3201298A JP 20129891 A JP20129891 A JP 20129891A JP 2985396 B2 JP2985396 B2 JP 2985396B2
- Authority
- JP
- Japan
- Prior art keywords
- dry etching
- film
- post
- side wall
- platinum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、電子デバイス等の製造
プロセスに用いられたドライエッチング後の後処理方法
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a post-processing method after dry etching used in a manufacturing process of an electronic device or the like.
【０００２】[0002]
【従来の技術】最近のＬＳＩ技術においては、微小領域
で容量の大きいキャパシターを形成するために、キャパ
シターとして誘電率の高い材料が検討されている。この
高誘電体材料には、酸化タンタル（ＴａＯｘ），酸化ス
トロンチウムチタン（ＳｒＴｉＯｘ）などが検討され、
高い容量を得るために、０．１μｍ以下の薄膜で形成さ
れる。2. Description of the Related Art In recent LSI technology, in order to form a capacitor having a large capacity in a minute area, a material having a high dielectric constant has been studied as a capacitor. For this high dielectric material, tantalum oxide (TaOx), strontium titanium oxide (SrTiOx) and the like have been studied.
In order to obtain a high capacity, it is formed with a thin film of 0.1 μm or less.
【０００３】この高誘電体材料の電極には、反応性の極
めて少ない白金（Ｐｔ）を用いることが検討されてい
る。これは、電極が僅かに酸化されたり、高誘電体材料
と反応して、薄い絶縁層を別に形成することで、ＤＲＡ
Ｍの容量が減少するからである。従来から、高誘電体材
料の特性を評価するために数十μｍ角サイズの電極加工
は、王水によるウェットエッチングや、ミリング等で行
われてきた。[0003] The use of platinum (Pt), which has extremely low reactivity, as an electrode of this high dielectric material has been studied. This is because the electrode is slightly oxidized or reacts with the high dielectric material to form a separate thin insulating layer, resulting in a DRA.
This is because the capacity of M decreases. Conventionally, in order to evaluate the characteristics of a high dielectric material, electrode processing with a size of several tens of μm square has been performed by wet etching with aqua regia, milling, or the like.
【０００４】しかし、実際の高密度素子で用いられるた
めには、電極の微細加工技術の開発が急がれている。こ
の微細加工を実現するためにドライエッチング装置を用
いて多層レジストマスクに、塩素系または臭化系のガス
にて白金をドライエッチングすることが試みられてい
る。[0004] However, in order to be used in actual high-density elements, development of electrode fine processing technology is urgently required. In order to realize this fine processing, dry etching of platinum with a chlorine-based or bromide-based gas on a multilayer resist mask using a dry etching apparatus has been attempted.
【０００５】[0005]
【発明が解決しようとする課題】ドライエッチング装置
を用いて多層レジストマスクに、塩素系または、臭化系
のガスにて白金をドライエッチングする場合、レジスト
マスクの側壁にはエッチングされた白金または、白金化
合物が付着する。この側壁膜は、ドライ処理や溶液処理
は除去できない。When platinum is dry-etched on a multilayer resist mask with a chlorine-based or bromide-based gas using a dry etching apparatus, the etched platinum or Platinum compounds adhere. This sidewall film cannot be removed by dry processing or solution processing.
【０００６】本発明の目的は、このような問題点を解決
し、白金に損傷を与えることなく側壁膜のみを除去する
ドライエッチング後の後処理方法を提供することにあ
る。An object of the present invention is to solve the above problems and to provide a post-treatment method after dry etching for removing only the side wall film without damaging platinum.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するた
め、本発明によるドライエッチング後の後処理方法にお
いては、レジストマスクを用いる白金膜のドライエッチ
ング時に前記レジストマスクに付着した白金または白金
化合物よりなる側壁膜を除去するドライエッチング後の
後処理方法であって、前記側壁膜の除去処理は、高圧力
噴水（スクラバー）を側壁膜に噴付けて洗浄するもので
ある。In order to achieve the above object, in a post-treatment method after dry etching according to the present invention, dry etching of a platinum film using a resist mask is performed.
Platinum or platinum adhered to the resist mask during
A post-treatment method after dry etching for removing a sidewall film made of a compound , wherein the sidewall film is removed by spraying a high-pressure fountain (scrubber) on the sidewall film.
【０００８】[0008]
【作用】Ｐｔエッチング後、レジストマスクの側壁に付
着した側壁膜は、高圧力噴水の噴付力によりＰｔは損傷
を受けず、側壁膜のみが除去される。After the Pt etching, Pt is not damaged by the spraying force of the high-pressure fountain, and only the sidewall film is removed from the sidewall film attached to the sidewall of the resist mask.
【０００９】[0009]
【実施例】以下に本発明の実施例を図によって説明す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described below with reference to the drawings.
【００１０】上層の光用または、ＥＢ（Ｅｌｅｃｔｒｏ
ｎ Ｂｅａｍ）用レジストと、中間層の塗布型酸化膜
（ＳＯＧ：Ｓｐｉｎ Ｏｎ Ｇｌａｓｓ）と、下層の有
機膜とからなる三層レジストをマスクにＰｔをエッチン
グする。中間層のＳＯＧは、ＣＦ4＋ＣＨＦ3ガスによる
エッチング（リアクティブイオンエッチング）でパター
ニングし、下層の有機膜（厚み１μｍ）は、酸素プラズ
マでエッチングすることで形成する。The upper layer for light or EB (Electro
Pt is etched using a three-layer resist including a resist for n beam), a coating type oxide film (Spin On Glass) of an intermediate layer, and a lower organic film as a mask. The SOG of the intermediate layer is patterned by etching with CF 4 + CHF 3 gas (reactive ion etching), and the lower organic film (1 μm in thickness) is formed by etching with oxygen plasma.
【００１１】Ｐｔのエッチングガスには、塩素、または
臭化水素ガスを用い、１ｍＴｏｒｒ以下の低圧領域でエ
ッチングをする。この場合、低圧下で安定なエッチング
を行うため、ＥＣＲ（Ｅｌｅｃｔｒｏｎ Ｃｙｃｌｏｔ
ｒｏｎ Ｒｅｓｏｎａｎｃｅ）ドライエッチング装置を
用いる。As a Pt etching gas, chlorine or hydrogen bromide gas is used to perform etching in a low pressure region of 1 mTorr or less. In this case, in order to perform stable etching under a low pressure, ECR (Electron Cyclot) is used.
ron Resonance) dry etching apparatus is used.
【００１２】また、下地酸化膜との選択比を高めるた
め、エッチング時の基板を０℃以下に下げる。図１にお
いて、１は有機膜、２は白金、３は下地酸化膜である。Further, the substrate at the time of etching is lowered to 0 ° C. or lower in order to increase the selectivity with the underlying oxide film. In FIG. 1, 1 is an organic film, 2 is platinum, and 3 is a base oxide film.
【００１３】しかし、この条件では、スパッタ性の高い
エッチングがなされるため、図１に示すようにマスクで
ある有機膜１の側壁には、白金または、白金化合物によ
る側壁膜４が付着する。有機膜１の除去は、通常の酸素
プラズマで剥離できるが、側壁膜４は、酸素プラズマ後
も図２に示すように残る。However, under this condition, since etching with high sputterability is performed, a sidewall film 4 made of platinum or a platinum compound adheres to the sidewall of the organic film 1 serving as a mask as shown in FIG. Although the organic film 1 can be removed by ordinary oxygen plasma, the sidewall film 4 remains after the oxygen plasma as shown in FIG.
【００１４】この側壁膜４は、酸素プラズマによる剥離
時にＣＦ4を添加したり、溶液処理を試みても除去でき
ないため、本発明においては、高圧力噴水５（ジェット
スクラバー）を噴付けてこれを除去する。Since the side wall film 4 cannot be removed even when CF 4 is added at the time of peeling by oxygen plasma or an attempt is made to perform a solution treatment, in the present invention, a high-pressure fountain 5 (jet scrubber) is sprayed to remove Remove.
【００１５】このジェットスクラバー法は、圧力１００
ｋｇ／ｃｍ2の水を側壁膜４を含むウエハーに噴出しな
がら、綿状のローラー６にてウエハーを洗浄するもので
ある。この処理によって図３に示すように側壁膜４は容
易に除去される。The jet scrubber method has a pressure of 100
The wafer is washed with a cotton-like roller 6 while water of kg / cm 2 is jetted onto the wafer including the side wall film 4. By this process, the side wall film 4 is easily removed as shown in FIG.
【００１６】上記の除去方法は、メタル系の材料をスパ
ッタ性の高いエッチングやミリングエッチングを施した
場合に生じる側壁膜の除去にも用いることができる。The above-described removal method can also be used for removing a side wall film generated when a metal material is subjected to etching or milling etching with high sputterability.
【００１７】[0017]
【発明の効果】本発明の後処理方法によれば、ドライ処
理や溶液処理では除去できない側壁膜の除去を容易に行
うことができる。According to the post-treatment method of the present invention, it is possible to easily remove the side wall film which cannot be removed by dry treatment or solution treatment.
【図１】Ｐｔドライエッチング後、レジストマスクの側
面に付着した膜を示した説明図である。FIG. 1 is an explanatory diagram showing a film adhered to a side surface of a resist mask after Pt dry etching.
【図２】レジストを酸素プラズマで除去した後、残った
側壁膜を示した説明図である。FIG. 2 is an explanatory diagram showing a sidewall film remaining after removing a resist by oxygen plasma.
【図３】高圧力噴水（ジェットスクラバー）により側壁
膜を除去した後のＰｔ電極を示した図である。FIG. 3 is a diagram showing a Pt electrode after a sidewall film has been removed by a high-pressure fountain (jet scrubber).
１ 有機膜 ２ 白金 ３ 下地酸化膜 ４ 側壁膜 ５ 高圧力噴水 ６ 綿状のローラー DESCRIPTION OF SYMBOLS 1 Organic film 2 Platinum 3 Base oxide film 4 Side wall film 5 High-pressure fountain 6 Cotton-like roller
Claims (2)
ッチング時に前記レジストマスクに付着した白金または
白金化合物よりなる側壁膜を除去するドライエッチング
後の後処理方法であって、 前記側壁膜の除去処理は、高圧力噴水（スクラバー）を
側壁膜に噴付けて洗浄するものであることを特徴とする
ドライエッチング後の後処理方法。1. A platinum film dry etching method using a resist mask.
Platinum adhered to the resist mask during etching or
A post-treatment method after dry etching for removing a side wall film made of a platinum compound , wherein the side wall film removal treatment is performed by spraying a high-pressure fountain (scrubber) onto the side wall film for cleaning. Post-treatment method after dry etching.
る側壁膜の除去処理において、同時に綿状のローラーに
より洗浄することを特徴とする請求項１に記載のドライ
エッチング後の後処理方法。2. The post-processing after dry etching according to claim 1, wherein the high-pressure fountain is sprayed onto the side wall film to clean the side wall film, and at the same time, cleaning is performed by a cotton-like roller. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3201298A JP2985396B2 (en) | 1991-07-16 | 1991-07-16 | Post-treatment method after dry etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3201298A JP2985396B2 (en) | 1991-07-16 | 1991-07-16 | Post-treatment method after dry etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0521405A JPH0521405A (en) | 1993-01-29 |
| JP2985396B2 true JP2985396B2 (en) | 1999-11-29 |
Family
ID=16438675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3201298A Expired - Lifetime JP2985396B2 (en) | 1991-07-16 | 1991-07-16 | Post-treatment method after dry etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2985396B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3200528B2 (en) * | 1995-01-19 | 2001-08-20 | 三菱電機株式会社 | Post-treatment method for dry etching |
| DE19860084B4 (en) * | 1998-12-23 | 2005-12-22 | Infineon Technologies Ag | Method for structuring a substrate |
| DE19901002B4 (en) * | 1999-01-13 | 2005-09-22 | Infineon Technologies Ag | Method for structuring a layer |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0240915A (en) * | 1988-07-29 | 1990-02-09 | Nippon Telegr & Teleph Corp <Ntt> | Formation of patterned metal layer |
| JP2894451B2 (en) * | 1989-11-06 | 1999-05-24 | 株式会社荏原製作所 | Jet scrubber |
-
1991
- 1991-07-16 JP JP3201298A patent/JP2985396B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0521405A (en) | 1993-01-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2001313282A (en) | Method of dry etching | |
| US6526996B1 (en) | Dry clean method instead of traditional wet clean after metal etch | |
| JPH0697103A (en) | Via-contact formation method in manufacture of semiconductor element | |
| JPH09266200A (en) | Manufacture of semiconductor device | |
| JP2985396B2 (en) | Post-treatment method after dry etching | |
| JP2983356B2 (en) | Method for manufacturing semiconductor device | |
| US6077777A (en) | Method for forming wires of semiconductor device | |
| JPH0677178A (en) | Manufacture of semiconductor device | |
| US6613680B2 (en) | Method of manufacturing a semiconductor device | |
| JP2000340544A (en) | Manufacture of semiconductor device | |
| JP2000196032A (en) | Manufacture of capacitor and the capacitor | |
| JP2888732B2 (en) | Method for manufacturing semiconductor device | |
| JP2006080263A (en) | Cleaning method of electronic device | |
| JPH09270419A (en) | Plasma etching method | |
| JPS59167021A (en) | Manufacture of semiconductor device | |
| JP2000183287A (en) | Etching method of dielectric thin film and semiconductor device | |
| JP3243975B2 (en) | Method for manufacturing semiconductor device | |
| JP4286204B2 (en) | Manufacturing method of semiconductor device | |
| KR100209637B1 (en) | Platinum etching method | |
| JPH113881A (en) | Ashing method and device | |
| JPH0536684A (en) | Manufacture of semiconductor device | |
| JP2785315B2 (en) | Method of forming fine pattern | |
| JP2001118829A (en) | Formation of metallic pattern | |
| KR100844937B1 (en) | Method for fabricating semiconductor device | |
| JPH09260354A (en) | Dry etching method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19990112 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19990831 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071001 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081001 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091001 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101001 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111001 Year of fee payment: 12 |
|
| EXPY | Cancellation because of completion of term |