JPH02281725A - Projection exposure apparatus - Google Patents

Projection exposure apparatus

Info

Publication number
JPH02281725A
JPH02281725A JP1103840A JP10384089A JPH02281725A JP H02281725 A JPH02281725 A JP H02281725A JP 1103840 A JP1103840 A JP 1103840A JP 10384089 A JP10384089 A JP 10384089A JP H02281725 A JPH02281725 A JP H02281725A
Authority
JP
Japan
Prior art keywords
transparent plate
focal length
exposure apparatus
projection exposure
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1103840A
Other languages
Japanese (ja)
Inventor
Yoshihiko Hirai
義彦 平井
Koji Matsuoka
松岡　晃次
Masaru Sasako
勝 笹子
Noboru Nomura
登 野村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1103840A priority Critical patent/JPH02281725A/en
Publication of JPH02281725A publication Critical patent/JPH02281725A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems

Abstract

PURPOSE:To enable intermittent variation of a focal length without shifting an image surface vertically, by varying the focal length by providing a transparent plate having different thicknesses between a projection lens and the image surface. CONSTITUTION:A transparent plate 3 having different thicknesses is provided between a lens 1 and an image surface 2 and a focal length is varied by varying the thicknesses. According to this constitution, an optical path is shortened by d-d/n by the transparent plate 3 of a thickness (d) having a refractive index (n) of light, and therefore the focal length can be varied by varying the thickness of the transparent plate 3. Since a focal depth can be varied without shifting the image surface vertically according to this constitution, a projection exposure apparatus enabling attainment of a high throughput can be obtained.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は微細パターン形成用の投影露光装置に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a projection exposure apparatus for forming fine patterns.

従来の技術 半導体集積回路のパターン形成技術において、縮小投影
露光装置を用いた露光技術で、段差基板等においては焦
点距離を変化させる事によりパターンを露光するＦＬＥ
Ｘ法（福田他、第３４回応用物理学関係連合講演会、講
演予稿集９４４８）は有効な手法である。しかし、ＦＬ
ＥＸ法を用いる場合、焦点距離を変化させる為に、従来
の露光装置を用いると、ステージを上下させて数回露光
する必要がある。この様に焦点を変化させて露光を行い
、ステージを上下させる場合には、スループットが低下
する他、ステージに負担がかかる問題点かある。Conventional technology In pattern forming technology for semiconductor integrated circuits, FLE is an exposure technology that uses a reduction projection exposure device, and exposes patterns by changing the focal length on stepped substrates, etc.
The X method (Fukuda et al., 34th Applied Physics Conference, Lecture Proceedings 9448) is an effective method. However, F.L.
When using the EX method and using a conventional exposure apparatus, it is necessary to move the stage up and down and perform exposure several times in order to change the focal length. When exposure is performed by changing the focal point in this manner and the stage is moved up and down, there are problems in that throughput is reduced and that a burden is placed on the stage.

発明が解決しようとする課題 本発明は上述の課題に鑑みてなされたもので、ステージ
の上下運動をさせずに焦点深度を変化させ高スループツ
トを可能とする投影露光装置を提供することを目的とす
る。Problems to be Solved by the Invention The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a projection exposure apparatus that enables high throughput by changing the depth of focus without vertically moving the stage. do.

課題を解決するための手段 本発明は上述の課題を解決するために、レンズと像面（
ステージ）との間に厚さの異なる透明板を設け、その厚
さを変化させることにより、焦点距離を変化させるもの
である。Means for Solving the Problems In order to solve the above-mentioned problems, the present invention provides a lens and an image plane (
Transparent plates with different thicknesses are provided between the camera and the stage, and by changing the thickness, the focal length can be changed.

作用 本発明は上述の構成により、光の屈折率ｎを有する厚さ
ｄの透明板によって光路長が（ｄ−−）だけ短くなる為
に、前記透明板の厚さｄを変化させる事によって焦点距
離を変化させることが可能となる。According to the above-described structure, the optical path length is shortened by (d--) by the transparent plate having the refractive index n and the thickness d. It becomes possible to change the distance.

実施例 （実施例１） 第１図は本発明の第１の実施例における投影露光装置の
構成図である。以下第１図を用いて本発明の第１の実施
例を説明する。投影レンズ１とステージ２との間に、厚
さが段階的に変化する屈折率ｎ、厚さｄ＋、ｄａ〜ｄ、
の透明板３を設ける。透明板３の厚さがｄｋの場合の焦
点距１１ｉＩｆは、透明板３がｄｋ ない時の焦点距離をｆｏとすると、ｆ＝ｆｏ−（ｄｋ−
−）で近似できる。透明板３を移動し、光が透過する部
分の厚さｄｋを変化させる事によって、ステージ２の上
下移動なしで焦点を変化させ、レジストを塗布した半導
体基板の露光を行う。露光後レジストを現像する事によ
り、微細のパターンが形成できる。Embodiment (Embodiment 1) FIG. 1 is a block diagram of a projection exposure apparatus in a first embodiment of the present invention. A first embodiment of the present invention will be described below with reference to FIG. Between the projection lens 1 and the stage 2, there is a refractive index n whose thickness changes stepwise, a thickness d+, da to d,
A transparent plate 3 is provided. The focal length 11iIf when the thickness of the transparent plate 3 is dk is f=fo-(dk-), where fo is the focal length without the transparent plate 3.
−) can be approximated. By moving the transparent plate 3 and changing the thickness dk of the portion through which light passes, the focal point is changed without moving the stage 2 up and down, and the semiconductor substrate coated with resist is exposed. By developing the resist after exposure, a fine pattern can be formed.

（実施例２） 第２図は本発明の第２の実施例における投影露光装置の
構成図である。以下第２図を用いて本発明の第２の実施
例を説明する。実施例１の透明板３の代わりに扇型部５
の厚さがそれぞれ異なる円板型の透明板４を本実施例で
は用いる。透明板４を、投影レンズ１とステージ２との
間に設置し、透明板４を回転させて露光する事により、
断続的に焦点距離を変化させてレジストを塗布した半導
体基板を一露光する事ができる。本実施例は従来の方法
と比べ、簡単かつ短時間で露光が完了する。(Embodiment 2) FIG. 2 is a block diagram of a projection exposure apparatus in a second embodiment of the present invention. A second embodiment of the present invention will be described below with reference to FIG. Fan-shaped portion 5 instead of transparent plate 3 in Example 1
In this embodiment, disk-shaped transparent plates 4 having different thicknesses are used. By installing a transparent plate 4 between the projection lens 1 and the stage 2 and rotating the transparent plate 4 for exposure,
A semiconductor substrate coated with resist can be exposed once by changing the focal length intermittently. In this embodiment, exposure is completed more easily and in a shorter time than in the conventional method.

発明の効果 以上の説明から明らかなように、本発明を用いる事によ
って、ステージの上下移動をせずに焦点距離を断続的に
変化する事ができ、段差基板を有するレジストの露光に
有効である。Effects of the Invention As is clear from the above explanation, by using the present invention, the focal length can be changed intermittently without moving the stage up and down, which is effective for exposing resists having stepped substrates. .

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の第１の実施例の投影露光装置の構成図
、第２図は本発明の第２の実施例の投影露光装置の構成
図である。 １・・・・投影レンズ、２・・・・ステージ、３，６・
・・・透明板、４・・・・半導体基板。 代理人の氏名　弁理士　栗野重孝　はか１８第 図 主ｇｌｆｉ墨榎FIG. 1 is a block diagram of a projection exposure apparatus according to a first embodiment of the present invention, and FIG. 2 is a block diagram of a projection exposure apparatus according to a second embodiment of the present invention. 1... Projection lens, 2... Stage, 3, 6...
...Transparent plate, 4...Semiconductor substrate. Name of agent: Patent attorney Shigetaka Kurino Haka18 main figure GLFI Bokuen

Claims (2)

【特許請求の範囲】[Claims] （１）投影露光装置の投影レンズと像面（ステージ）と
の間に厚さの異なる透明板を設け、前記透明板を通して
焦点距離を変化させることを特徴とする投影露光装置。(1) A projection exposure apparatus characterized in that a transparent plate of different thickness is provided between a projection lens and an image plane (stage) of the projection exposure apparatus, and the focal length is changed through the transparent plate. （２）透明板が厚さが変化した円板状の板からなり、前
記円板状透明板を回転させることにより前記透明板部分
の厚さを変化させて焦点距離を変化させることを特徴と
する特許請求の範囲第１項記載の投影露光装置。(2) The transparent plate is composed of a disc-shaped plate with a varying thickness, and by rotating the disc-shaped transparent plate, the thickness of the transparent plate portion is changed and the focal length is changed. A projection exposure apparatus according to claim 1.
JP1103840A 1989-04-24 1989-04-24 Projection exposure apparatus Pending JPH02281725A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1103840A JPH02281725A (en) 1989-04-24 1989-04-24 Projection exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1103840A JPH02281725A (en) 1989-04-24 1989-04-24 Projection exposure apparatus

Publications (1)

Publication Number Publication Date
JPH02281725A true JPH02281725A (en) 1990-11-19

Family

ID=14364627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1103840A Pending JPH02281725A (en) 1989-04-24 1989-04-24 Projection exposure apparatus

Country Status (1)

Country Link
JP (1) JPH02281725A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06275490A (en) * 1993-01-20 1994-09-30 Nec Corp Aligner
JP2011007941A (en) * 2009-06-24 2011-01-13 Fujifilm Corp Exposure head and exposure apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06275490A (en) * 1993-01-20 1994-09-30 Nec Corp Aligner
JP2011007941A (en) * 2009-06-24 2011-01-13 Fujifilm Corp Exposure head and exposure apparatus

Similar Documents

Publication Publication Date Title
US8661375B2 (en) Frequency division multiplexing (FDM) lithography
JP2011199321A (en) Lithography method
JPH075675A (en) Mask and preparation thereof
JPH06124872A (en) Image forming method and manufacture of semiconductor device using the method
JPH02281725A (en) Projection exposure apparatus
JPS59160144A (en) Photomask
JPH06260383A (en) Exposure method
JPH08274000A (en) Method of exposure
JPH0467613A (en) Microscopic contact hole forming method
JPH0664337B2 (en) Photomask for semiconductor integrated circuit
JP2693805B2 (en) Reticle and pattern forming method using the same
KR0146399B1 (en) Semiconductor pattern forming method
JPH0431858A (en) Manufacture of mask
JP2894772B2 (en) X-ray window manufacturing method
JPH0955350A (en) Exposure method and aligner
KR970004421B1 (en) Photolithography apparatus in semiconductor
JPH0527413A (en) Photomask for exposing device
JPH01243436A (en) Forming method for photo sensitive organic resin film
JPH05198479A (en) Formation of resist pattern
JPH01101628A (en) Reducing stepper
KR0134583Y1 (en) Piezoelectric device
JPH0562894A (en) Forming method for fine pattern
JPH05241319A (en) Reticle for semiconductor integrated circuit
KR100515368B1 (en) Apparatus for forming fine patterns of semiconductor wafer by shift patterning and the method of the same
JPH0429142A (en) Exposing method and mask used for same