KR0134583Y1 - Piezoelectric device - Google Patents
Piezoelectric device Download PDFInfo
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- KR0134583Y1 KR0134583Y1 KR2019940004660U KR19940004660U KR0134583Y1 KR 0134583 Y1 KR0134583 Y1 KR 0134583Y1 KR 2019940004660 U KR2019940004660 U KR 2019940004660U KR 19940004660 U KR19940004660 U KR 19940004660U KR 0134583 Y1 KR0134583 Y1 KR 0134583Y1
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- ceramic plate
- piezoelectric ceramic
- changed
- light
- piezoelectric
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
본 고안은 압전소자 장치에 관한 것으로, 웨이퍼의 위치에 따라 감광막의 두께가 달라져서 원하는 감광막 패턴을 형성하지 못하는 문제점을 해결하기 위하여 레티클을 통과하는 광이 투과되도록 하는 압전 세라믹판에 일정전압이 가변되도록 하는 가변전압 공급장치로 이루어진 압전소자 장치를 이용하는 것이다. 상기 압전소자 장치는 광이 상기 압전세라믹판을 투과하는 동안에 상기 압전 세라믹판에 인가되는 전압을 가변시켜서 상기 압전 세라믹판을 통과하는 광의 경로가 변화되고, 경로가 바뀐 광이 대물 렌즈를 통과하면서 촛점위치가 상하로 일정 높이 가변되도록 하는 것이다.The present invention relates to a piezoelectric element device, in order to solve the problem that the thickness of the photoresist film varies according to the position of the wafer to form a desired photoresist pattern, so that a constant voltage is varied in the piezoelectric ceramic plate through which light passing through the reticle is transmitted. It is to use a piezoelectric element device consisting of a variable voltage supply device. The piezoelectric element device varies the voltage applied to the piezoelectric ceramic plate while light passes through the piezoceramic plate so that the path of the light passing through the piezoelectric ceramic plate is changed, and the light whose path is changed passes through the objective lens. The position is to be changed up and down a certain height.
Description
제1도는 축소 노광장치에 압전소자 장치를 구비시켜 광 경로가 변화되는 것을 도시한 개략도.1 is a schematic view showing that the light path is changed by providing a piezoelectric element device in the reduction exposure apparatus.
제2도는 압전세라믹판 양단에 예정된 전압을 인가할 때 결정방향이 달라지는 것을 도시한 도면.2 is a view showing that the crystal direction is changed when applying a predetermined voltage across the piezoelectric ceramic plate.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1,6 : 광 4 : 패턴1,6: light 4: pattern
7 : 감광막 8 : 촛점위치7: photosensitive film 8: focusing position
13 : 압전세라믹판 20 : 압전소자 장치13 piezoelectric ceramic plate 20 piezoelectric element device
30 : 대물렌즈 40 : 웨이퍼30: objective lens 40: wafer
본 고안은 압전소자 장치에 관한 것으로, 특히 압전세라믹판에 예정된 전압을 인가하도록 구비된 압전소자 장치를 이용하여 광학적 경로를 변경시켜서 원하는 감광막 패턴을 형성하도록 하는 압전소자 장치에 관한 것이다.The present invention relates to a piezoelectric device, and more particularly, to a piezoelectric device for forming a desired photosensitive film pattern by changing an optical path using a piezoelectric device equipped to apply a predetermined voltage to a piezoelectric ceramic plate.
본 고안은 축소 노광장치와 카메라 및 캠(CAM)코더등 화상이미지 형성 방법에 적용할 수 있다.The present invention can be applied to a method of forming an image image such as a reduced exposure apparatus and a camera and a CAM coder.
종래의 축소 노광장치에 의한 단일 촛점 방식의 리소그라피 패턴 형성 방법은 충분한 공정마진을 얻을 수 없다. 즉 레티클에 형성된 패턴을 웨이퍼나 감광막에 전사할 때 하부의 패턴에 의한 단차 차이로 각 부위마다 패턴 이미지의 최적 촛점 위치가 다르게 된다. 이와같은 경우 종래에는 글로벌(global) 단차를 무시하고, 전체의 평균 최적 촛점으로 패턴 마스크 공정을 진행하였다. 이런 경우 촛점 심도(D.O.P; depth of focus)가 두꺼운 감광막에서 충분한 노광이 되지 않아 원하는 감광막 패턴을 형성할 수 없는 문제점이 있다.The conventional single lithography pattern formation method by the reduced exposure apparatus cannot obtain sufficient process margin. In other words, when the pattern formed on the reticle is transferred to the wafer or the photoresist film, the optimum focusing position of the pattern image is different for each part due to the difference in steps due to the lower pattern. In such a case, the pattern mask process is proceeded with the average optimal focus of the whole, ignoring the global step. In this case, there is a problem that a desired photoresist pattern cannot be formed because a sufficient depth of focus (D.O.P) is not exposed in a thick photoresist.
따라서, 본 고안은 상기의 문제점을 해결하기 위하여 레티클과 대물렌즈를 통해 얻어지는 촛점이 웨이퍼상에 도포된 감광막의 두께에 따라 달라지는 것을 보완하기 위하여 압전 세라믹판을 상기 레티클과 대물렌즈 사이에 위치시키고, 상기 압전 세라믹판에 공급되는 전압을 노광 시에 변화시켜서 초점위치가 상하로 일정 높이 가변되도록 하여 감광막을 완전히 노광시킴으로서 그로인하여 두께가 다른 감광막에서도 원하는 감광막패턴을 얻을 수 있도록 하는 압전소자 장치를 제공하는데 그 목적이 있다.Therefore, in order to solve the above problems, a piezoelectric ceramic plate is placed between the reticle and the objective lens in order to compensate that the focus obtained through the reticle and the objective lens depends on the thickness of the photosensitive film applied on the wafer. The present invention provides a piezoelectric element device in which a photoresist film is completely exposed by changing a voltage supplied to the piezoelectric ceramic plate during exposure so that a focal position is changed up and down by a predetermined height so that a desired photoresist pattern can be obtained even in a photoresist film having a different thickness. The purpose is.
상기 목적을 달성하기 위한 본 고안은 레티클을 통과하는 광이 투과되도록 하는 압전 세라믹판에 일정전압이 가변되도록 하는 가변전압 공급장치가 연결되어 이루어지고, 광이 상기 압전세라믹판을 투과하는 동안에 상기 압전 세라믹판에 인가되는 전압을 가변시켜서 상기 압전 세라믹판을 통과하는 광의 경로가 변화되고, 경로가 변화된 광이 대물 렌즈를 통과하면서 촛점위치가 상하로 일정 높이 가변되도록 하는 압전소자 장치이다.The present invention for achieving the above object is made by connecting a variable voltage supply device for varying a predetermined voltage to the piezoelectric ceramic plate to transmit the light passing through the reticle, the piezoelectric ceramic while the light is transmitted through the piezoelectric ceramic plate It is a piezoelectric element device in which a path of light passing through the piezoelectric ceramic plate is changed by varying a voltage applied to the ceramic plate, and the light whose path is changed passes through an objective lens so that a focal position is changed up and down a certain height.
상기와 같이 촛점 위치가 상하로 가변되는 경우 반도체 웨이퍼의 위치에 따라 감광막의 두께가 달라지더라도 충분한 노광이 이루어지게 되어 원하는 감광막 패턴을 얻을 수 있다.As described above, when the focusing position is changed up and down, even if the thickness of the photoresist film varies depending on the position of the semiconductor wafer, sufficient exposure is achieved to obtain a desired photoresist pattern.
이하, 첨부한 도면을 참조하여 본 고안의 상세한 설명을 하기로 한다.Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.
제1도는 본 고안에 따라 압전소자 장치를 반도체소자 제조시 사용되는 축소 노광장치에 적용한 경우를 도시한 도면이다.1 is a diagram illustrating a case where a piezoelectric element device is applied to a reduction exposure apparatus used in manufacturing a semiconductor device according to the present invention.
상기 도면을 참조하면, 레티클(10)과 대물렌즈(projection lens)(30) 사이에 압전소자 장치(20)를 구비시키고, 상기 대물 렌즈(30)의 하부에 하부 패턴(11)이 형성된 웨이퍼(40)를 위치시킨다. 즉, 광원(도시안됨)에서 발생시킨 광(1)을 레티클(10)에 구비된 패턴(4)을 통과시키고, 통과된 광을 압전소자 장치(20)의 압전 세라믹판(13)을 통과시켜 광(6)의 경로를 변회시킨다. 이와같이 광의 경로가 변화된 광(6)을 대물렌즈(7)를 거쳐 웨이퍼(40) 상부에 도포된 감광막(7) 내부에서 촛점(8)이 형성되도록 한 것을 도시한다.Referring to the drawings, a wafer having a piezoelectric element device 20 between the reticle 10 and the projection lens 30 and having the lower pattern 11 formed under the objective lens 30 ( 40). That is, the light 1 generated by the light source (not shown) is passed through the pattern 4 provided in the reticle 10, and the passed light is passed through the piezoelectric ceramic plate 13 of the piezoelectric element device 20. The path of the light 6 is changed. The focus 6 is formed in the photosensitive film 7 coated on the wafer 40 via the objective lens 7 through the light 6 having the changed light path.
상기 레티클(10)의 패턴(4)이 다수개로 이루어지면 그 하부에 위치하는 압전소자 장치(20)의 압전세라믹판(13)도 다수개로 구비하고, 각각의 압전세라믹판(13)에는 가변전압이 인가되도록하는 가변전압 공급 장치(도시안됨)를 구비시켜 연결한다.When the pattern 4 of the reticle 10 is formed in plural, a plurality of piezoelectric ceramic plates 13 of the piezoelectric element device 20 positioned under the reticle 10 are provided, and each piezoelectric ceramic plate 13 has a variable voltage. A variable voltage supply device (not shown) to be applied is provided and connected.
상기한 본 고안에 의하면 상기 레티클(10)을 통해 광(1)이 압전 세라믹판(13)을 통과하는 동안 상기 압전 세라믹판(3)에 인가되는 전압을 변화시키면서 인가하여 상기 압전 세라믹판(13)을 통과하는 광(6)의 경로에 변화를 주어서 대물 렌즈를 거쳐 감광막 내부에 맺히는 촛점위치가 상하로 일정 높이로 변화하게 된다. 그로인하여 촛점 위치가 상하로 변화되는 경우 반도체 웨이퍼의 위치에 따라 감광막의 두께가 달라지더라도 충분한 노광이 이루어지게 되어 원하는 감광막 패턴을 얻을 수 있다.According to the present invention, the piezoelectric ceramic plate 13 is applied by varying the voltage applied to the piezoelectric ceramic plate 3 while the light 1 passes through the piezoelectric ceramic plate 13 through the reticle 10. By changing the path of the light (6) passing through the), the focal position formed in the photosensitive film through the objective lens is changed to a predetermined height up and down. As a result, when the focus position is changed up and down, even if the thickness of the photoresist film varies depending on the position of the semiconductor wafer, sufficient exposure can be made to obtain a desired photoresist pattern.
참고로, 종래에 최적의 촛점위치를 정하는 것은 노광하기 전에 스크라이브 라인에 형성된 셀 얼라인먼트에 미리 예정된 광을 조사하여 그 반사광을 이용하여 최적의 촛점위치를 찾아내며, 이러한 촛점 위치가 결정되면 x,y,z의 받을 스테퍼에 입력하여 그 이후에 노광공정을 진행하게 된다. 이렇게 하는 경우 감광막의 두께에 따라 최적의 초점위치가 달라져야 하지만 이 값이 고정되어 있으므로 원하는 감광막 패턴을 얻기가 어렵다.For reference, conventionally determining the optimal focus position is to irradiate a predetermined light to the cell alignment formed in the scribe line before exposure to find the optimal focus position using the reflected light, and if such a focus position is determined, x, y and z is input to the stepper to be received, and then the exposure process is performed. In this case, the optimum focusing position should be changed depending on the thickness of the photoresist film, but since this value is fixed, it is difficult to obtain a desired photoresist pattern.
제2도는 압전세라믹판(13)의 양단에 예정된 전압을 인가할경우 압전세라믹판(13)내의 결정 구조가 변하게 되는 것을 도시한 도면이다.2 is a view showing that the crystal structure in the piezoelectric ceramic plate 13 changes when a predetermined voltage is applied to both ends of the piezoelectric ceramic plate 13.
상기한 바와같이, 본 고안은 압전세라믹판을 이용한 압전소자 장치를 광이 통과하는 지역에 구비시키고, 상기 압전세라믹판에 예정된 전압을 인가시켜 광의 경로를 바꾸어 주어 촛점위치를 변화시킬 수가 있다.As described above, the present invention is provided with a piezoelectric element device using a piezoelectric ceramic plate in a region where light passes, and by applying a predetermined voltage to the piezoelectric ceramic plate to change the path of the light to change the focus position.
따라서, 본 고안은 상기한 바와같이 웨이퍼의 위치에 따라 심한 두께 차이를 갖는 감광막을 노광할 때 감광막 내부에 형성되는 촛점위치를 일정시간동안 가변시켜서 두께가 다른 감광막에 충분한 노광 고정을 진행할 수가 있으므로 원하는 감광막 패턴을 형성할 수가 있다.Therefore, the present invention can change the focusing position formed inside the photoresist film for a predetermined time when exposing the photoresist film having a significant thickness difference according to the position of the wafer as described above. A photosensitive film pattern can be formed.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940004660U KR0134583Y1 (en) | 1994-03-09 | 1994-03-09 | Piezoelectric device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940004660U KR0134583Y1 (en) | 1994-03-09 | 1994-03-09 | Piezoelectric device |
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| Publication Number | Publication Date |
|---|---|
| KR950028727U KR950028727U (en) | 1995-10-20 |
| KR0134583Y1 true KR0134583Y1 (en) | 1999-03-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR2019940004660U KR0134583Y1 (en) | 1994-03-09 | 1994-03-09 | Piezoelectric device |
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| KR (1) | KR0134583Y1 (en) |
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1994
- 1994-03-09 KR KR2019940004660U patent/KR0134583Y1/en not_active IP Right Cessation
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| KR950028727U (en) | 1995-10-20 |
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