JPH02281133A - Apparatus for detecting short-circuit position - Google Patents

Abstract

PURPOSE:To detect a short-circuit position definitely by detecting light which is emitted from the short-circuit position when a part between electrodes or a part between wirings in a thin film semiconductor device is short-circuited. CONSTITUTION:A TFT (thin film transistor) array substrate 1 is set on a stage 2. An electric signal is supplied from a driving circuit 20. At this time, when a short circuit position is present on the substrate 1, microplasma light is emitted from the short circuit position. Then, the stage 2 is scanned with X and Y drives 3 and 4. The microplasma light emitted from the short-circuit position on the substrate 1 is detected with a high sensitivity camera 18 and a TV monitor 19. The short-circuit position and the like at a gate electrode and a source electrode in the TFT are detected. When the detected short-circuit occurs in the TFT, the gate electrode is electrically separated from the gate wiring with a laser device 5. When the short-circuit occurs at the intersection part of a source wiring and the gate wiring, the source wiring or the gate wiring is electrically separated on both sides of the intersecting part with the device 5. Thus, the short-circuit defect is repaired.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a short-circuit detection device for detecting a short-circuit between electrodes or wiring in a thin film semiconductor device.

[Conventional technology]

FIG. 5 is a configuration diagram showing a short circuit defect repair device for detecting and repairing short circuit defects between electrodes or wirings of a thin film semiconductor device;
FIG. 6 is a plan view showing the pixel structure of the thin film semiconductor device, FIG. 7 is a plan view showing the vicinity of the thin film transistor of the thin film semiconductor device, and FIG. 8 is a sectional view taken along line I in FIG. FIG. 9 and FIG. 1O are a plan view and a cross-sectional view taken along I-x# in FIG. 9, respectively, showing the wiring intersection structure of a thin film semiconductor device.

5 to 10, a thin film semiconductor device such as an 1llid thin film transistor (TPT) array substrate or a liquid crystal display (LCD) panel using the substrate, (21 an XY stage mounted on the thin film semiconductor device Ill', 131
/:i (4) is an XY stage (X drive and X drive that move 21 in the X direction and Y direction, respectively, !5+
1d Thin film semiconductor device) A thin film cutting device that cuts short circuits between electrodes or wirings in thin film semiconductor device 11, and uses a laser device or the like. 161flX drive electric 3:,X drive・
41 and a processor for controlling the drive control ff1l of the thin film cutting device tel, 17) an insulating substrate made of Nigarasu etc.
T F T )+81-Constituting gate electrode 9', insulation triuo+, semiconductor layer ct3 source voltage, t!
121 and a drain electrode 031 are formed in a laminated manner. (It is electrically connected to the 14111 insulating substrate (formed on 71 and the pixel electrode, drain*pole 03).

0 is a source wiring electrically connected to the source electrode (121), and f+61 is a gate wiring electrically connected to the gate electrode (9).

Next, the operation will be explained. First, thin film semiconductor device II
If I is a TFT array board, send an electrical signal from another power supply (without a face) to one of the source wirings 4IAt151 and one of the gate wirings (1G), and then send an electrical signal to the source wiring (15I and the gate wiring circle). Between the gate electrode (9) and the source electrode (1) of one TPT +81 connected to.

Or wiring! Electrically check for short circuit between I61 and gate wiring H. This operation is sequentially performed for all the combinations of the source wires @t+a and all the gate wires 11e, and the presence or absence of a short circuit is detected. Further, when the thin film semiconductor device Ill is an LCD panel, the short circuit location is estimated from the display defect appearing on the LCD panel when the LCD panel is turned on. Next, in the pair of the source wiring 1Jsl and the gate wiring 1e where the short-circuit portion detected as described above exists using the R mock cutting device 6) (r-), the source wiring 0υ Or disconnect it from the gate wiring (10). If the short circuit is not recovered by the above operation, use the thin film cutting device +51 ft to electrically cut both sides of the intersection of the source wiring @Ua. At this time, the source wiring; Electrical VC is separated on both sides of this cut point, and the source wiring 116
The electric signal supplied from one side of 1 is not transmitted after the cut point, and all electric signals are separately supplied to the cut source wiring ll51 from the terminal on the opposite side from the terminal supplying the electric signal. Then, the repair of the short circuit defect is completed.

[Problem to be solved by the invention]

Conventional short-circuit detection is performed as described above, so even if a short-circuited wire is found, it is not possible to clearly determine the location where the short-circuit is occurring, and the subsequent repair process is difficult. There is a problem in that a normal part that is not short-circuited may be cut.

The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to obtain a short circuit detection device that can clearly detect the position of a short circuit that occurs in a thin film semiconductor device.

[Means to solve the problem]

A short circuit detection device according to the present invention detects light generated from a short circuit when a short circuit occurs between electrodes or wiring of a thin film semiconductor device.

[Effect]

The short-circuit detection device according to the present invention detects the short-circuit position by detecting light generated from the short-circuit position of a thin film semiconductor device.

[Embodiments of the invention]

An embodiment of the invention will be described below with reference to the drawings. 1st
In the figure, 1 is a thin film semiconductor device, here is a TFT array substrate, +51 is a thin film cutting device, here is a laser device, here is a short circuit detection device, here is a high-sensitivity camera that detects microplasma emission] It consists of i and TV monitor 09). The bamboo is 'I'FT array board +
11 shows a drive circuit to which all electrical signals are supplied. The other constituent parts are the same as the corresponding parts in FIG.

Next, the operation will be explained. First, TFT array substrate +
11 F stage 121 K is set to 1, and an electric signal is supplied from the drive circuit (to). At this time, if there is a short circuit between the electrodes or wiring in the TFT array substrate +41, microplasma light emission is generated from the short circuit. Scan the station 121 with the X drive 13) and
+ detects microplasma emission from the short-circuited point on the TFT array substrate III, and detects the short-circuited point M between the gate electrode and the source electrode in the TPT, the short-circuited point between the gate electrode and the drain electrode, and the intersection between the source wiring and the gate wiring. Distinguish and detect short circuit locations. Next, the detected short circuit point is TF'
If the short circuit occurs at the intersection of the source wiring and the gate wiring, the gate electrode is electrically disconnected from the gate wiring by the laser device 161, and if the short circuit occurs at the intersection of the source wiring and the gate wiring, the source is disconnected from the gate wiring on both sides of the intersection. The wiring or gate wiring is electrically disconnected by the laser device +51F (therefore, the short circuit defect is repaired).

Note that in the above embodiment, the short circuit detection device 1171
Although the tracer device 5) is located on the side facing the TFT 7L/I substrate 111K, it may be located on the same side, or it may be located on either the front side or the back side of the TFT array forming surface of the substrate. A similar effect can be expected.

In addition, in the above embodiment, a high-sensitivity camera capable of detecting microplasma emission is used as a short-circuit detection device (1η), but a high-sensitivity camera in the infrared region that detects heat radiation circles at the short-circuit is used. However, the same effect as in the above embodiment can be obtained.

Further, in the above embodiment, an ion beam device may be used instead of the laser device 151.

Further, in the above embodiment, the present invention is applied to a TFT array substrate +
11, but TFT
A similar effect can be expected for detection of short circuits between electrodes or wiring in CD panels and other thin film semiconductor devices using the array substrate Ill.

Further, by using the short-circuit location detection device 07) of the present invention, the following effects can be obtained.

That is, when a short circuit occurs between the electrodes of a thin film semiconductor device, the pixel connected to the TPT electrically cut by the laser device does not operate and leaves a single point display defect, but the pixel portion of the thin film semiconductor device The structure of one pixel electrode is divided into a plurality of pixel electrodes VC as shown in FIG. By separating T+81, it is possible to limit the display defect caused by the repair of the short circuit defect to a small portion. Furthermore, as shown in FIG. 3, a plurality of T P
By using a pixel structure that connects T F T +81, accurately detecting the short circuit position using the short circuit detection device 1171 of the present invention, and completely cutting off the short circuit T F T +81, the remaining normal T F T f8+ is connected to the pixel electrode. (By driving 141, without leaving any defects in the whole or part of the pixel,
Short circuit defects can be repaired.

Furthermore, the wiring structure in which the source wiring a- branches into a plurality of parts at the intersection of the source wiring l1m and the gate wiring ff1lj61 of the thin film semiconductor device as shown in FIG. By accurately detecting the branch of the source wiring state that has occurred, and repairing the short circuit by disconnecting the branch from all source wiring a0, the source wiring lI~
Even if a plurality of short circuits occur on the same wiring, it can be repaired without leaving electrically disconnected defective parts.

〔Effect of the invention〕

As described above, according to the present invention, the short circuit detection device
When there is a short circuit between the electrodes or wiring of the thin film semiconductor device, the light generated from the short circuit point is detected to detect the short circuit point, so there is an effect that the short circuit position can be clearly detected.

[Brief explanation of drawings]

FIG. 1 is a block diagram showing a short circuit defect repairing device for a thin film semiconductor device equipped with a short circuit detection device according to an embodiment of the present invention, and FIGS. Figure 4 is a plan view showing the structure of the pixel part to keep the remaining display defects to a small area after short circuits (short circuits caused by short circuits) ψ and the structure of the pixel part to prevent the display defects from remaining. A plan view showing a wiring intersection structure for not leaving an electrically defective part in the wiring after repairing a short circuit, FIG. 7 is a plan view showing the structure of a pixel section of a thin film semiconductor device, and FIG. 8 is a sectional view taken along line T in FIG. Figure 9 is a plan view showing the structure of a wiring intersection in a conventional thin film semiconductor device, and Figure 50 is 1 in Figure 9.
- It is a sectional view along the X-ray. In the figure, (1η is a short-circuit point detection device. In the figure, the same reference numerals indicate l?jl-1 or equivalent parts.

Claims (1)

[Claims] In a thin film semiconductor device in which a plurality of electrodes or a plurality of wirings are laminated on a substrate via an insulating layer, when a short circuit occurs between the electrodes or the wirings, light generated from the short circuit is detected, and the short circuit is detected. A short circuit detection device characterized by detecting a short circuit.