JPH0227790A - Manufacture of wiring board and its device - Google Patents
Manufacture of wiring board and its deviceInfo
- Publication number
- JPH0227790A JPH0227790A JP63176503A JP17650388A JPH0227790A JP H0227790 A JPH0227790 A JP H0227790A JP 63176503 A JP63176503 A JP 63176503A JP 17650388 A JP17650388 A JP 17650388A JP H0227790 A JPH0227790 A JP H0227790A
- Authority
- JP
- Japan
- Prior art keywords
- laser beam
- superconductor thin
- thin film
- ceramic
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000919 ceramic Substances 0.000 claims abstract description 23
- 239000002887 superconductor Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 239000001301 oxygen Substances 0.000 claims abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 5
- 229910002480 Cu-O Inorganic materials 0.000 claims abstract 2
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 claims abstract 2
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000005238 degreasing Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- -1 oxygen ions Chemical class 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 10
- 239000010407 anodic oxide Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 4
- 230000006866 deterioration Effects 0.000 abstract description 4
- 150000002500 ions Chemical class 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 2
- 238000007493 shaping process Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- YMWLPMGFZYFLRP-UHFFFAOYSA-N 2-(4,5-dimethyl-1,3-diselenol-2-ylidene)-4,5-dimethyl-1,3-diselenole Chemical compound [Se]1C(C)=C(C)[Se]C1=C1[Se]C(C)=C(C)[Se]1 YMWLPMGFZYFLRP-UHFFFAOYSA-N 0.000 description 1
- LZJCVNLYDXCIBG-UHFFFAOYSA-N 2-(5,6-dihydro-[1,3]dithiolo[4,5-b][1,4]dithiin-2-ylidene)-5,6-dihydro-[1,3]dithiolo[4,5-b][1,4]dithiine Chemical class S1C(SCCS2)=C2SC1=C(S1)SC2=C1SCCS2 LZJCVNLYDXCIBG-UHFFFAOYSA-N 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Laser Beam Processing (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は配線基板の製造方法およびその装置に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method and apparatus for manufacturing a wiring board.
周知のように、半導体デバイスの開発・製造の進歩に伴
って、今日家電製品から産業機器に至るまで小型化、軽
量化、高速化、高密度化、高信頼化、低価格の要請はま
すます強（なＬａ技術革新が展開されている。As is well known, with advances in the development and manufacturing of semiconductor devices, there is an increasing demand for smaller, lighter, faster, higher density, higher reliability, and lower prices in everything from home appliances to industrial equipment. Strong technological innovations are being developed.
これらの動向の中で最近注目されているのが超電導体で
ある。超電導体とは電気抵抗がゼロになる現象で大別す
ると金属系（例：水銀、鉛、ニオブ等）、セラミック系
（例Ｌａ−Ｓ、−Ｃｕ−０系、 Ｙ−Ｂａ−Ｃｕ−０系
等）、有機物系（例ＴＭＴＳＦ、 ＢＥＤＴ−ＴＴＦ塩
等）等が挙げられる。Among these trends, superconductors have recently attracted attention. Superconductors are a phenomenon in which electrical resistance becomes zero, and can be roughly divided into metal-based (e.g. mercury, lead, niobium, etc.) and ceramic-based (e.g. La-S, -Cu-0, Y-Ba-Cu-0). etc.), organic substances (eg TMTSF, BEDT-TTF salt, etc.), and the like.
主な利用分野として９強力な電磁石の応用、エレクトロ
ニクス、エネルギー関係が挙げられ、製造装置の小型化
、素子の高密度化、高速化、電気電導性向上、エネルギ
ー蓄積、電磁じゃへいに効果があり２幅広い用途が期待
されている。The main fields of application include the application of 9 powerful electromagnets, electronics, and energy-related fields, and it is effective in miniaturizing manufacturing equipment, increasing the density and speed of elements, improving electrical conductivity, energy storage, and electromagnetic interference. 2 A wide range of applications are expected.
しかしながら、デバイスへの実用化を考えた場合、製造
工程において空気にさらされたＬａ大量の水を使用する
。又、セラミックス系超電導体材料は液体窒素温度下で
動作するが、保守時には大気中に取り出す必要があＬａ
その際水滴がつく専の問題があＬａ水や空気との反応に
よる劣化の問題を解決する技術の開発が早急に望まれて
いる。However, when considering practical use in devices, La is exposed to air and uses a large amount of water in the manufacturing process. Furthermore, although ceramic superconductor materials operate under liquid nitrogen temperatures, they must be taken out into the atmosphere during maintenance.
At this time, there is an urgent need to develop a technology that solves the problem of water droplets forming on the surface of La, and the problem of deterioration caused by the reaction with water and air.
かかる欠点を改善するために種々の表面処理方法が考え
られているが、いずれも上記要求を満足するものはみあ
たらない。従って、処理方法を確立することは今迄制約
されていた道を切り開くものであＬａ生産技術に寄与す
るものである。Although various surface treatment methods have been considered to improve these drawbacks, none of them has been found to satisfy the above requirements. Therefore, establishing a treatment method will open up a path that has hitherto been restricted and will contribute to La production technology.
この発明に係る配線基板の製造方法およびその装置は鋭
意検討を重ねた結果、所要形状のセラミックス基材から
成る物品の両面を所要の脱脂した後、レーザ・乾式成膜
法により超電導体薄膜（例えばＬａ−Ｓ、−Ｃｕ−０系
又はＹ−Ｂａ−Ｃｕ−０系又は有機物系）を形成し、つ
いで正のバイアス電圧をかけ、プラズマにより発生させ
た酸素負イオンを上記超電導体薄膜を形成させたセラミ
ックス製の物品表面上に所要膜厚堆積させた後、ついで
レーザ・ビーム等を照射させた配線基板を製造すること
を特徴とする。As a result of extensive studies, the wiring board manufacturing method and device according to the present invention have been developed. After degreasing both sides of an article made of a ceramic base material of a desired shape, a superconductor thin film (for example, La-S, -Cu-0 system, Y-Ba-Cu-0 system, or organic material system) is formed, and then a positive bias voltage is applied to cause oxygen negative ions generated by plasma to form the superconductor thin film. The method is characterized in that a wiring board is manufactured by depositing a desired thickness on the surface of a ceramic article and then irradiating it with a laser beam or the like.
この発明においては、セラミックスから成る基材の表面
にセラミックス系の超電導体薄膜を形成した後、所要膜
厚の陽極酸化皮膜を形成し、レーザ・スクライビングに
より配線基板を製造するので、使用中における劣化を防
止できる。In this invention, after a ceramic superconductor thin film is formed on the surface of a ceramic base material, an anodic oxide film of the required thickness is formed and a wiring board is manufactured by laser scribing, so that the wiring board will not deteriorate during use. can be prevented.
以下において実施例を掲げてこの発明を更に詳しく説明
する。The present invention will be explained in more detail below with reference to Examples.
第１図はこの発明による一配線基板の断面を示すもので
ある。図において、（］）はセラミックスから成る基材
、 （２−１）、 （２−２）は超電導体薄膜、 （３
−１）。FIG. 1 shows a cross section of a wiring board according to the present invention. In the figure, (]) is a base material made of ceramics, (2-1), (2-2) are superconductor thin films, (3
-1).
（３−２）はプラズマにより形成した陽極酸化膜である
。なお、ここでこの発明による配線基板の一製造工程を
第２図、第３図を用いて簡単に説明する第３図はセラミ
ックスから成る基材上の表面に超電導体Ｒ膜（２）を形
成するための製造装置を示すもので、（５）は真空容器
、（６）は被膜源を収納する容器、 （７−２）、（７
−２）はヒーター、（８）は集光レンズ（９−１）、
（９−２）、 （９−３）はミラー、 （１Ｇ−１）
、 （１０−２）（１０−３）、 （１０−４）はビー
ム線、（１１）はエネルギー源である。上記セラミック
スから成る基材（１）を脱脂後、真空容器（５）に入れ
、１０１から１０−＠Ｔ、、、になる迄脱気し、被膜源
の容器（６）とセラミックスから成る素材（１）とをヒ
ーター（７−１）、 （７−２）に、より所定の温度に
加熱した後、上記容器（６）を回転しながらエネルギー
源（ｌ］）からレーザ光を発振させ、レーザ・ビーム線
（１０−１）、 （１０−２）、 （１０−３）、 （
１０−４）をミラー （９−１）、 （９−２）、 （
９−３）によって反射させて集光レンズ（８）ニよって
レーザ・ビーム線（１０−１）、 （１Ｇ−２）（１Ｇ
−３）、 （１０−４）を収束させ選択的に被膜源に照
射する。このようにして被膜源を加熱して熔融・蒸発さ
せて、セラミックスから成る基材（１）表面上に超電導
体薄膜（２−１）、 （２−２）を堆積させるのである
そして次に脱脂後、上記超電導体薄膜（２−１）。(3-2) is an anodic oxide film formed by plasma. Here, one manufacturing process of a wiring board according to the present invention will be briefly explained using FIGS. 2 and 3. FIG. 3 shows a process in which a superconductor R film (2) is formed on the surface of a base material made of ceramics. (5) is a vacuum container, (6) is a container for storing a coating source, (7-2), (7
-2) is a heater, (8) is a condensing lens (9-1),
(9-2), (9-3) are mirrors, (1G-1)
, (10-2), (10-3), and (10-4) are beam rays, and (11) is an energy source. After degreasing the base material (1) made of ceramics, it is placed in a vacuum container (5) and degassed from 101 to 10-@T. 1) is heated to a predetermined temperature by the heaters (7-1) and (7-2), and then a laser beam is oscillated from the energy source (l) while rotating the container (6).・Beam lines (10-1), (10-2), (10-3), (
10-4) to mirror (9-1), (9-2), (
9-3) and reflected by the condensing lens (8), the laser beam rays (10-1), (1G-2) (1G
-3), (10-4) are converged and selectively irradiated onto the coating source. In this way, the film source is heated to melt and evaporate, and the superconductor thin films (2-1) and (2-2) are deposited on the surface of the ceramic base material (1). After that, the superconductor thin film (2-1).
（２−２）を被覆したセラミックスから成る基材（１）
を陽極に取り付け、真空度を１０−４から１０−＠Ｔ、
、、、にし、バイアス電圧をかける。ついで、プラズマ
により発生した酸素負イオンを上記基材（１）の表面上
に所要膜厚堆積させ、陽極酸化膜（３−１）、 （３−
２）となし、セラミックスから成る基材（１）表面に被
覆した超電導体薄膜（２−１）、 （２−２）の劣化を
防止するのである。ついでレーザ等を照射してパターン
を形成して完成品（４）となる。Base material (1) made of ceramics coated with (2-2)
attached to the anode, and the degree of vacuum was changed from 10-4 to 10-@T.
, , and apply a bias voltage. Next, oxygen negative ions generated by plasma are deposited to a required thickness on the surface of the base material (1) to form anodic oxide films (3-1), (3-
2) This prevents deterioration of the superconductor thin films (2-1) and (2-2) coated on the surface of the ceramic base material (1). Next, a pattern is formed by irradiating with a laser or the like to form a finished product (4).
この発明は以上説明したとおり１本発明のセラミックス
から成る基材上に被膜した超電導体薄膜を空気、水によ
る劣化を防止できるので今迄制約されていた課題を解決
でき、用途が今後ますます広がＬａエレクトロニクスに
おけるデバイスとしてｌな地位を占めるものと確信する
。As explained above, this invention can prevent the superconductor thin film coated on the base material made of the ceramics of the present invention from being degraded by air and water, solving the problems that have been limited until now, and its applications will become more widespread in the future. We are confident that this device will occupy an important position as a device in La electronics.
第１図はこの発明による一配線基板の断面を示す図、第
２図はこの発明による配線基板の一製造工程を示す図、
第３図はこの発明による配線基板の一製造装置を示す図
である。図中、（１）はセラミックスから成る基材、
（２−１）、 （２−２）は超電導体薄膜（３−１）、
（３−２）は陽極酸化膜、（４）は完成品、（５）は
真空容器、（６）は被膜源の容器、 （７−１）、 （
７−２）はヒーター、（８）は集光レンズ、 （９−１
）、 （９−２）、 （９−３）はミラー（１０−１）
、 （１０−２）、 （１０−３）、 （ＩＱ−４）は
ビーム線、（１１）はエネルギー源である。
なお１図中同一あるいは相当部分には同一符号を付して
示しである。FIG. 1 is a diagram showing a cross section of a wiring board according to the present invention, FIG. 2 is a diagram showing a manufacturing process of a wiring board according to the invention,
FIG. 3 is a diagram showing a wiring board manufacturing apparatus according to the present invention. In the figure, (1) is a base material made of ceramics;
(2-1), (2-2) is a superconductor thin film (3-1),
(3-2) is the anodic oxide film, (4) is the finished product, (5) is the vacuum container, (6) is the film source container, (7-1), (
7-2) is a heater, (8) is a condensing lens, (9-1
), (9-2), (9-3) are mirrors (10-1)
, (10-2), (10-3), and (IQ-4) are beam rays, and (11) is an energy source. Note that in FIG. 1, the same or corresponding parts are designated by the same reference numerals.
Claims (2)
を所要の脱脂した後，１０＾−＾４から１０＾−＾６Ｔ
ｏｒｒ範囲の真空容器内に所要の距離を隔てて上記セラ
ミックス製の物品を設置し，１０＾２Ｗ／ｃｍ＾２ない
し１０＾７Ｗ／ｃｍ＾２の範囲の強度を有するエネルギ
ービームを超電導体（例えばＬａ−Ｓｒ−Ｃｕ−Ｏ系又
はＹ−Ｂａ−Ｃｕ−Ｏ系又は有機物系）に選択的に指向
させ，加熱し，熔融・蒸発させて上記セラミックス製の
物品表面に被覆し，超電導体薄膜を形成させた後，つい
で１０＾−＾５から１０＾−＾６Ｔｏｒｒ範囲の真空容
器内に所要の距離を隔てて上記超電導体薄膜を形成させ
たセラミックス製の物品を設置し，次に正のバイアス電
圧をかけ，プラズマにより発生させた酸素負イオンを上
記超電導体薄膜を形成させたセラミックス製の物品表面
上に所要膜厚堆積させた後，ついでレーザ・ビーム等を
照射させ配線を形成したことを特徴とする配線基板の製
造方法。(1) After degreasing both sides of an article made of a ceramic base material of a desired shape to the required extent,
The above-mentioned ceramic article is placed at a required distance in a vacuum container with a range of La-Sr-Cu-O system or Y-Ba-Cu-O system or organic material system) is selectively directed to the surface of the ceramic article by heating, melting and evaporation to coat the surface of the above ceramic article to form a superconductor thin film. After forming the superconductor thin film, the ceramic article on which the superconductor thin film has been formed is placed in a vacuum chamber at a pressure of 10^-^5 to 10^-^6 Torr at a required distance, and then a positive bias is applied. After applying a voltage and depositing negative oxygen ions generated by plasma to a required thickness on the surface of the ceramic article on which the superconductor thin film was formed, wiring was formed by irradiating the product with a laser beam, etc. Features: A manufacturing method for wiring boards.
ｒ範囲の真空度を維持する真空ポンプと，被膜源を収納
する容器と，上記被膜源から所要の距離を隔てて設置し
た引掛け具と，上記被膜源の容器を回転させる駆動部と
，レーザ・ビームを取り入れる窓口と，レーザ光を発生
させるエネルギー源と，レーザ・ビーム線の導波路と，
レーザ・ビーム線を反射させるミラーと，レーザ・ビー
ム線を収束させる集光レンズとで構成したことを特徴と
する配線基板の製造装置(2) Vacuum container and 10^-^6~10^-^6 Tor
a vacuum pump that maintains a degree of vacuum in the r range, a container that houses the coating source, a hook installed at a required distance from the coating source, a drive unit that rotates the coating source container, and a laser beam.・A window for introducing the beam, an energy source for generating laser light, a waveguide for the laser beam line,
A wiring board manufacturing device comprising a mirror that reflects a laser beam and a condenser lens that converges the laser beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63176503A JPH0227790A (en) | 1988-07-15 | 1988-07-15 | Manufacture of wiring board and its device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63176503A JPH0227790A (en) | 1988-07-15 | 1988-07-15 | Manufacture of wiring board and its device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0227790A true JPH0227790A (en) | 1990-01-30 |
Family
ID=16014781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63176503A Pending JPH0227790A (en) | 1988-07-15 | 1988-07-15 | Manufacture of wiring board and its device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0227790A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009016639A (en) * | 2007-07-06 | 2009-01-22 | Nitto Electric Works Ltd | Electronic equipment housing box |
-
1988
- 1988-07-15 JP JP63176503A patent/JPH0227790A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009016639A (en) * | 2007-07-06 | 2009-01-22 | Nitto Electric Works Ltd | Electronic equipment housing box |
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