JPH02277767A - Production of low-melting sputtering target - Google Patents
Production of low-melting sputtering targetInfo
- Publication number
- JPH02277767A JPH02277767A JP9830089A JP9830089A JPH02277767A JP H02277767 A JPH02277767 A JP H02277767A JP 9830089 A JP9830089 A JP 9830089A JP 9830089 A JP9830089 A JP 9830089A JP H02277767 A JPH02277767 A JP H02277767A
- Authority
- JP
- Japan
- Prior art keywords
- target
- backing plate
- bonding material
- low
- melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002844 melting Methods 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000005477 sputtering target Methods 0.000 title claims description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 24
- 230000008018 melting Effects 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000011109 contamination Methods 0.000 abstract description 3
- 229910052759 nickel Inorganic materials 0.000 abstract description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- 239000010949 copper Substances 0.000 description 10
- 229910052738 indium Inorganic materials 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 3
- 238000007751 thermal spraying Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000004993 emission spectroscopy Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- ZTXONRUJVYXVTJ-UHFFFAOYSA-N chromium copper Chemical compound [Cr][Cu][Cr] ZTXONRUJVYXVTJ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、薄膜形成に用いるスパッタリングターゲット
の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for manufacturing a sputtering target used for forming a thin film.
（従来の技術）
スパッタリング法は真空容器内に圧力が０．１〜１０Ｐ
ａの範囲のＡｒガスを導入し、直流または高周波電力を
加えてグロー放電を発生する。負電位のターゲット表面
をＡｒイオンが叩き、ターゲット表面をスパッタする。(Conventional technology) The sputtering method requires a pressure of 0.1 to 10 P in the vacuum container.
Argon gas in the range a is introduced, and direct current or high frequency power is applied to generate glow discharge. Ar ions strike the target surface at a negative potential, sputtering the target surface.
被スパツタ粒子は対向して設置された基板上に堆積し、
薄膜を形成する。The particles to be spattered are deposited on a substrate placed oppositely,
Forms a thin film.
一般的に、このスパッタリング法で用いられるターゲッ
トは、ボンディング材でバッキングプレートと接合して
使用される。Generally, the target used in this sputtering method is bonded to a backing plate using a bonding material.
この場合、バッキングプレートは多くは純銅あるいは銅
系合金、まれにはステンレス等が使用され、ボンディン
グ材はインジウムのような低融点金属、半田のような合
金、樹脂等が使用される。In this case, the backing plate is often made of pure copper or a copper-based alloy, rarely stainless steel, and the bonding material is a low melting point metal such as indium, an alloy such as solder, resin, etc.
しかし、ターゲットが化学記号でＳｉ、Ｓ；。However, the target has the chemical symbol Si, S;.
ｐｂ、 ｚｎあるいはこれらの金属を含む合金のように
低融点である場合、メタル系ボンディング材を使用する
とターゲットはボンディング材に食われてしまいバッキ
ングプレートへの接合が不可能である。If a metal bonding material is used, such as pb, zn, or an alloy containing these metals, which has a low melting point, the target will be eaten away by the bonding material, making it impossible to bond it to the backing plate.
殊に、ＩｎあるいはＳｎを含む合金のように、ボンディ
ング材と融点が同じかあるいは低い場合はバッキングプ
レートへの接合はできない。In particular, if the melting point is the same or lower than that of the bonding material, such as an alloy containing In or Sn, it cannot be bonded to the backing plate.
このような場合は樹脂系ボンディング材を使用してター
ゲットとバッキングプレートを接合する方法が一般的で
あるが、スパッタリングの方式によってはスパッタ中ガ
スが発生したり、接合力が弱い等の理由で樹脂系ボンデ
ィング材が使用できない場合がある。In such cases, the common method is to use a resin-based bonding material to bond the target and backing plate, but depending on the sputtering method, gas may be generated during sputtering, or the bonding force may be weak, etc. type bonding materials may not be usable.
（解決しようとする問題点）
本発明は、上記のような場合、メタル系ボンディング材
を用いて低融点ターゲットとバッキングプレートを接合
する新規なスパッタリングターゲットの製造方法を提供
しようとするものである。(Problems to be Solved) The present invention seeks to provide a novel method for manufacturing a sputtering target in which a low melting point target and a backing plate are bonded using a metal bonding material in the above-mentioned case.
〈問題を解決するための手段）
本発明は、低融点ターゲットの接合面および側面あるい
はターゲット表面の全面に金属層をコーティングしたの
ち、メタル系ボンディング材を用いてバッキングプレー
トと接合するスパッタリングターゲットの製造である。<Means for Solving the Problems> The present invention provides a method for producing a sputtering target in which a metal layer is coated on the bonding surface and side surfaces of a low melting point target, or the entire surface of the target, and then bonded to a backing plate using a metal bonding material. It is.
コーティングする方法は、メツキ法、溶射法、蒸着法等
を用いることができる。As a coating method, a plating method, a thermal spraying method, a vapor deposition method, etc. can be used.
コーティングする金属層は、ニッケル、クロム銅、銀、
亜鉛、鉛あるいはこれらの金属を含む合金が好ましいが
、ターゲツト材とぬれ性、密着性がよく、また、ターゲ
ツト材と反応しにくい金属あるいは合金を選択する必要
がある。The metal layer to be coated is nickel, chromium copper, silver,
Zinc, lead, or alloys containing these metals are preferred, but it is necessary to select a metal or alloy that has good wettability and adhesion with the target material, and that does not easily react with the target material.
また、コート膜は種類の異なる金属の多層膜であっても
よい。Furthermore, the coat film may be a multilayer film of different metals.
本発明によれば、金属層のコーティングにより低融点タ
ーゲットはボンディング材に食われることなく、また、
ボンディング材と同程度あるいはそれより低い融点の金
属あるいは合金のターゲットでも金属層がターゲットの
溶出を防止するためメタル系ボンディング材を用いて接
合が可能である。According to the present invention, the low melting point target is not eaten by the bonding material due to the metal layer coating, and
Even if a metal or alloy target has a melting point comparable to or lower than that of the bonding material, bonding can be performed using a metal-based bonding material because the metal layer prevents the target from being eluted.
また、コーティングした金属層によりバッキングプレー
トからの拡散によるターゲット内部への汚染もない。Furthermore, due to the coated metal layer, there is no contamination inside the target due to diffusion from the backing plate.
コーティングした金属層は接合後、スパッタ面および側
面を研削等で除去する必要がある。After the coated metal layer is bonded, the sputtered surface and side surfaces must be removed by grinding or the like.
（実施例１）
寸法１２７ｍｍＸ５０８ｍｍ厚さ５ｍｍの８１のターゲ
ットの表面全体に厚さ２０μのＮｉをメツキ法で着膜し
た。このターゲットを寸法１４７ｍｍｘ５２８ｍｍ厚さ
２０ｍｍの無酸素銅のバッキングプレートにボンディン
グ材としてインジウムを用いて２００℃の温度で接合し
た。接合後研削用機械を用いてスパッタ面と側面のメツ
キ層を除去した。(Example 1) A Ni film with a thickness of 20 μm was deposited on the entire surface of 81 targets with dimensions of 127 mm x 508 mm and thickness of 5 mm by a plating method. This target was bonded to a backing plate of oxygen-free copper having dimensions of 147 mm x 528 mm and thickness of 20 mm at a temperature of 200° C. using indium as a bonding material. After bonding, the plating layer on the sputtered surface and side surfaces was removed using a grinding machine.
その結果、３ｉターゲツトとバッキングプレートとの接
合性は極めて良好であることがわかった。As a result, it was found that the bondability between the 3i target and the backing plate was extremely good.
また、該ターゲットを１０１発光分析法を用いて分析し
た結果、ターゲット内部にＮ１、ｌｎ、Ｃｕ等の拡散は
全く認められないことがね力じた。Furthermore, as a result of analyzing the target using 101 emission spectrometry, it was found that no diffusion of N1, ln, Cu, etc. was observed inside the target.
（実施例２）
寸法１２７ｍｍｘ５０８ｍｍ厚さ５ｍｍの５ｎ−Ｚｎ
（３０−７０ｗｔ％）合金の夕”−ゲットの表面全体に
厚さ２０μのＺｎをメツキ法で着膜した。(Example 2) 5n-Zn with dimensions 127 mm x 508 mm and thickness 5 mm
(30-70wt%) Zn was deposited on the entire surface of the alloy to a thickness of 20μ by plating method.
このターグダトを寸法１４７ｍｍｘ５２８ｍｍ厚さ２０
ｍｍの無酸素銅のバッキングプレートにボンディング材
としてインジウムを用いて２００℃の温度で接合した。Dimensions: 147mm x 528mm Thickness: 20
It was bonded to a backing plate made of oxygen-free copper of mm in diameter at a temperature of 200° C. using indium as a bonding material.
接合後研削用機械を用いてスパッタ面と側面のメツキ層
を除去した。After bonding, the plating layer on the sputtered surface and side surfaces was removed using a grinding machine.
その結果、５ｎ−７ｎ合金ターゲットとバッキングプレ
ートとの接合性は極めて良好であることがわかった。As a result, it was found that the bondability between the 5n-7n alloy target and the backing plate was extremely good.
また、該ターゲットを１０１発光分析法を用いて分析し
た結果、ターゲット内部にＩｎ、Ｃｕ等の拡散は全く認
められないことがわかった。Further, as a result of analyzing the target using 101 emission spectrometry, it was found that no diffusion of In, Cu, etc. was observed inside the target.
（実施例３）
寸法１２７ｍｍｘ５０８ｍｍ厚さ５ｍｍのＳｎのターゲ
ットの接合面と側面に厚さ３０μのＡＱを溶射法で着膜
した。このターゲットを寸法１４７ｍｍｘ５２８ｍｍ厚
さ２０ｍｍの無酸素銅のバッキングプレートにボンディ
ング材としてインジウムを用いて２００℃の温度で接合
した。接合後研削用機械を用いて側面の溶射層を除去し
たその結果、Ｓｎりτゲットとバッキングプレートとの
接合性は極めて良好であることがわかったまた、該ター
ゲットを１０１発光分析法を用いて分析した結果、ター
ゲット内部にＡｇ、Ｉｎ。(Example 3) An AQ film having a thickness of 30 μm was deposited by a thermal spraying method on the bonding surface and side surfaces of a Sn target having dimensions of 127 mm x 508 mm and a thickness of 5 mm. This target was bonded to a backing plate of oxygen-free copper having dimensions of 147 mm x 528 mm and thickness of 20 mm at a temperature of 200° C. using indium as a bonding material. After bonding, the sprayed layer on the side surface was removed using a grinding machine. As a result, it was found that the bonding between the Sn τ target and the backing plate was extremely good. As a result of analysis, Ag and In were found inside the target.
Ｃｕ等の拡散は全く認められないことがわかった。It was found that no diffusion of Cu, etc. was observed.
（実施例４）
寸法１２７ｍｍＸ５０８ｍｍ厚さ５ｍｍの［３ｉのター
ゲットの接合面と側面に厚さ３０μのＣＬＪを溶射法で
着膜した。このターゲットを寸法１４７ｍｍｘ５２８ｍ
ｍ厚さ２０ｍｍの無酸素銅のバッキングプレートにボン
ディング材としてインジウムを用いて２００℃の温度で
接合した。接合後研削用機械を用いて側面の溶剤層を除
去したその結果、Ｂｉツタ−ットとバッキングプレート
との接合性は極めて良好であることがわかったまた、該
ターゲットをＩＣＰ発光分析法を用いて分析した結果、
ターゲット内部にＣｕ、ｉｎ等の拡散は全く認められな
いことがわか°った。(Example 4) CLJ with a thickness of 30 μm was deposited on the joint surface and side surface of a [3i target with dimensions of 127 mm x 508 mm and thickness of 5 mm by thermal spraying. This target has dimensions 147mm x 528m
It was bonded to a 20 mm thick oxygen-free copper backing plate at a temperature of 200° C. using indium as a bonding material. After bonding, the solvent layer on the side surface was removed using a grinding machine. As a result, it was found that the bondability between the Bi target and the backing plate was extremely good. As a result of the analysis,
It was found that no diffusion of Cu, In, etc. was observed inside the target.
（発明の効果）
本発明によれば、従来、メタル系ボンディング材を用い
てはバッキングプレートに接合困難である低融点ターゲ
ットを極めてよく接合できる特徴がある。(Effects of the Invention) According to the present invention, a low melting point target, which is conventionally difficult to bond to a backing plate using a metal bonding material, can be bonded extremely well.
殊に、ボンディング材と同程度あるいはそれより低い融
点の金属あるいは合金のターゲットでもメタル系ボンデ
ィング材を用いて接合することができる特徴がある。In particular, a metal or alloy target having a melting point comparable to or lower than that of the bonding material can be bonded using the metal bonding material.
また、ターゲット内部へのメタル系ボンディング材およ
びバッキングプレート材からの拡散による汚染をコーテ
ィングした金属層により防止することができる特徴があ
る。Another feature is that the coated metal layer can prevent contamination caused by diffusion from the metal bonding material and backing plate material into the target interior.
Claims (1)
ンディング材を用いてバッキングプレートに接合したの
ち、該ターゲットのスパッタ面および側面あるいは側面
の金属層を除去することを特徴とする低融点スパッタリ
ングターゲットの製造方法。A low melting point sputtering target characterized in that the surface of the low melting point target is coated with a metal layer and bonded to a backing plate using a metal bonding material, and then the sputtering surface and side surfaces of the target or the metal layer on the side surfaces are removed. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9830089A JP2896518B2 (en) | 1989-04-18 | 1989-04-18 | Manufacturing method of low melting point sputtering target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9830089A JP2896518B2 (en) | 1989-04-18 | 1989-04-18 | Manufacturing method of low melting point sputtering target |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02277767A true JPH02277767A (en) | 1990-11-14 |
| JP2896518B2 JP2896518B2 (en) | 1999-05-31 |
Family
ID=14216070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9830089A Expired - Lifetime JP2896518B2 (en) | 1989-04-18 | 1989-04-18 | Manufacturing method of low melting point sputtering target |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2896518B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6428663B1 (en) * | 2000-07-03 | 2002-08-06 | Applied Materials, Inc. | Preventing defect generation from targets through applying metal spray coatings on sidewalls |
| JP2012184469A (en) * | 2011-03-04 | 2012-09-27 | Mitsubishi Materials Corp | METHOD FOR PRODUCING In SPUTTERING TARGET |
-
1989
- 1989-04-18 JP JP9830089A patent/JP2896518B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6428663B1 (en) * | 2000-07-03 | 2002-08-06 | Applied Materials, Inc. | Preventing defect generation from targets through applying metal spray coatings on sidewalls |
| JP2012184469A (en) * | 2011-03-04 | 2012-09-27 | Mitsubishi Materials Corp | METHOD FOR PRODUCING In SPUTTERING TARGET |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2896518B2 (en) | 1999-05-31 |
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