CN102286742A - Method for metallizing diamond surface - Google Patents
Method for metallizing diamond surface Download PDFInfo
- Publication number
- CN102286742A CN102286742A CN2011102487812A CN201110248781A CN102286742A CN 102286742 A CN102286742 A CN 102286742A CN 2011102487812 A CN2011102487812 A CN 2011102487812A CN 201110248781 A CN201110248781 A CN 201110248781A CN 102286742 A CN102286742 A CN 102286742A
- Authority
- CN
- China
- Prior art keywords
- diamond
- solder
- diamond particles
- layer
- brazing filler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention discloses a method for metallizing a diamond surface. The method comprises the following steps of: coating a layer of organic adhesive on a washed diamond particle surface; sufficiently mixing the organic adhesive with brazing filler metal; sieving diamond particles with the brazing filler metal; dispersing to a ceramic plate or a mica plate; and placing into a vacuum or inert atmosphere and heating to the fusion temperature of the brazing filler metal, i.e. forming a brazing filler metal alloy layer on the diamond particle surface. If dispersed to other metal or alloy powder, the sieved diamond particles are compressed tightly and then placed into the vacuum or inert atmosphere and heated to the fusion temperature of the brazing filler metal, i.e. a double-layer alloy layer can be formed on the diamond particle surface. The invention has the advantages that: metallurgical bonding is formed between metallization layers and diamond particles, the bonding force is far higher than that of mechanical embedding, the metallization layers are formed in a short period of time and have large thickness, and two layers of metallization layers with different materials can be simultaneously formed without secondary or tertiary treatment.
Description
Technical field
The present invention relates to diamond particles, especially relate to a kind of diamond surface metallization method that diamond tool is used of making.
Background technology
Diamond tool is meant with diamond particles to cutting the mill material, the goods of making by means of wedding agent and other subsidiary material with definite shape, performance and purposes.Diamond tool mainly adopts technology manufacturings such as powder metallurgy or plating, because of diamond is nonmetal, do not soak into the metal matrix powder and the solder of routine, mode of connection between diamond particles and the matrix is based on physics modes such as impregnated or coatings, bonding strength is low, diamond particles easily comes off in the use, has reduced the work-ing life of adamantine utilization ratio and instrument.
If diamond surface has the same character of metal, bonding and the wetting ability of then all kinds of metal pair diamond particles can significantly promote, diamond surface metallization promptly is the technology of developing for this purpose, mainly contain electroless plating at present and add plating, vacuum evaporation, plasma sputtering, magnetron sputtering, physical vapor deposition, chemical vapour deposition, modes such as machinery coating, the electroless plating that has of being used widely adds plating, vacuum evaporation etc., use this technology can make metal layer form dressing at diamond surface, but because coatings does not produce metallurgical binding with diamond, bonding force is controlled by the machinery of coating and is provided, to life-span and the efficient effect and not obvious that improves instrument.
Diamond and metal layer then can significantly increase metal layer to adamantine bonding force if form metallurgical binding, and the research of this respect at present mainly concentrates on by carbide forming element is carried out on the solid phase diffusion attached to diamond surface.The three-layer metal pattern that forms metallic carbide film, alloy surface layer, plated metal cortex on the diamond particles surface is disclosed as patent CN85100286B " technology of diamond surface metallization ", the material of itself and diamond key coat is Ti, Cr, Ta, Nb etc., film is at diamond surface deposition carbide generting element alloy film, be bonded to diamond surface through vacuum heat treatment, make its alloy turn to the alloy surface layer with sedimentation and vacuum heat treatment again.Patent 200580006497.7 " abrasive material of coating " discloses the diamond of surface-coated, and coating material is carbide and nitride such as titanium carbide, titanium nitride, and paint-on technique is a physical vapor deposition.
The method that above-mentioned employing deposition adds the solid phase diffusion is carried out metalized to diamond surface and has been obtained good effect, but because diamond surface deposition back is titanium carbide or titanium nitride isoelectronic compound, be difficult for the metal reaction with fabrication tool, need further to carry out the instrument manufacturing through just preferably after twice even three minor metalizations.Because its metal solid phase diffusion thickness is generally 0.5～10 μ m, and metal layer is thinner, is absorbed by other element reaction in sintering process easily, cause metal layer to disappear simultaneously, and will increase the thickness of settled layer, required time will prolong greatly.
Summary of the invention
The object of the present invention is to provide a kind of pricker that adopts to be coated with the diamond surface metallization method that technology is carried out.
For achieving the above object, the present invention can take following technical proposals:
Diamond surface metallization method of the present invention, clean diamond particles surface-coated one deck organic bonding agent will be cleaned, then with the solder thorough mixing, sieve out the diamond particles that is stained with solder, it is distributed on ceramic plate or the plate mica, place vacuum or inert atmosphere to be heated to the solder temperature of fusion, can form the solder alloy layer on the diamond particles surface.
Also can apply the agent of one deck organic bonding with cleaning clean diamond particles surface, then with the solder thorough mixing, sieve out the diamond particles that is stained with solder, it is distributed in the powder of other metal or alloy, be placed into after compressing and be heated to the solder temperature of fusion in vacuum or the inert atmosphere, can form solder alloy layer and metal alloy layer successively on the diamond particles surface.
Described solder is the powdered alloy that contains Ti element or Cr element, and granularity is 200 orders with carefully.
Since diamond be by carbon constitute nonmetal, must contain in the solder can with the carbide forming element of carbon reaction, as the IV B in the periodic table of chemical element, V B, VI B family element and Fe, Mn, elements such as Ni, Si; Again because polymorphic transformation at high temperature can take place in man-made diamond, cause the diamond local graphiteization, cause adamantine hardness, intensity, performances such as heat conduction sharply descend, therefore the temperature of fusion of solder can not be too high, be controlled at about 1000 ℃ and be advisable, selection is with Ni, Cu, Ag etc. can satisfy this requirement for the braze material of fundamental element, according to the fundamental element of selecting, in solder, add Sn accordingly, Mn, Si, P, B, In etc. reduce the element that fusing point improves brazing property, fuse into braze material with carbide forming element, the fused solder is made powdered alloy under vacuum or high-purity inert atmosphere protection, powder size can obtain the used solder of the present invention less than 200 orders; The wherein preferred Cr of the carbide forming element in the solder, Ti two elements, the solder that contains Cr is selected nickel-based solders such as NiCrP and NiCrSiBFe for use, the solder that contains the Ti element is selected alloy systems such as AgCuTi, CuTi, CuSnTi for use, these solders can be bought standard prod, as BNi82CrSiBFe, BNi76CrP, Ag68CuTi, Ag50CuTi, Cu80SnTi or the like, also can design voluntarily according to above-mentioned scheme.
When adopting nickel-based solder to make the solder of diamond particles surface metalation,,, also can make double-deck surface metalation layer as required so can make the surface metalation layer of single layer structure because nickel-based solder can carry out sintering with most of metals; When employing contains titanium solder making surface metalation layer; because titanium elements is very active; easily oxidation or form brittle metallic compound in sintering process; cause the diamond tool degradation made; by addressing this problem at other metal or alloy of titaniferous metal layer surface metalation one deck; so adopt when containing the titanium solder pricker and being coated with, the diamond surface metallization layer of preparation is based on bilayer structure.
The organic bonding agent that the diamond particles body applies before soldering can be selected soldering Mierocrystalline cellulose commonly used, polyoxyethylene glycol, polyacrylic ester etc., and the method that applies caking agent has dipping, sprinkling etc.
The invention has the advantages that: be different from the electrochemical plating diamond surface metallization, form metallurgical binding between metal layer of the present invention (solder alloy layer) and the diamond particles, even after the diamond particles fragmentation, the metal layer of soldering still with the diamond mortise, and metallized surface of electrochemical plating and diamond do not form metallurgical binding, can avulsion; The surface metalation layer that is different from DIFFUSION TREATMENT behind the PVD, its treatment time reaches a few hours, and thickness is generally 0.5～10 μ m, the metal layer formation time on diamond particles of the present invention surface is short, moment can form metal layer after the solder fusing, thickness can reach 0.2mm, and can form the different metal layer of two-layer material, need not to carry out secondary or three processing, diamond particles brazing property after the metallization is good, can be used for the good conventional solder of plasticity and produces mono-layer diamond tool.
Embodiment
Embodiment 1:
Diamond surface metallization method of the present invention, be that 45 orders-50 purpose man-made diamond granule is cleaned up with acetone, put into glass dish, splash into polyacrylic ester, thorough mixing, be poured in the 250 purpose BNi76CrP solder powders, the limit is broken up the diamond particles limit and is stirred, until all diamond particles bodies are all broken up again, and the surface is stained with one deck solder powder, these diamond particles bodies are divided on the ceramic plate, put into vacuum oven, be evacuated down to and be not less than 2.0 * 10
-2Pa is heated to 905 ℃, is incubated 1 minute, naturally cools to then below 50 ℃ and comes out of the stove, and promptly obtains the diamond particles finished product of surface metalation, and the thickness of this metal layer can reach 0.1mm.
Embodiment 2:
Diamond surface metallization method of the present invention; be that 45 orders-50 purpose man-made diamond granule is cleaned up with acetone; put into glass dish; splash into polyacrylic ester; behind the thorough mixing; be poured in the 250 purpose Ni82CrSiBFe solder powders; the limit is broken up the diamond particles limit and is stirred; until all diamond particles bodies are all broken up, and the surface is stained with one deck solder powder, and above-mentioned diamond particles body is sneaked in the 200 purpose YG8 cemented carbide powders again; mix; put into graphite jig and compress, mould is put into the argon shield stove, be heated to 1005 ℃; be incubated 1 minute; naturally cool to then below 50 ℃ and come out of the stove, the diamond particles that sieves out is the diamond particles finished product that there is the double-layer metallization layer on the surface, and the thickness of this metal layer can reach 0.15mm.
Embodiment 3:
Diamond surface metallization method of the present invention, be that 50 orders-60 purpose man-made diamond granule is cleaned up with acetone, put into glass dish, splash into cellulose aqueous solution, behind the thorough mixing, be poured in the 250 purpose Cu80Sn10Ti solder powders, the limit is broken up the diamond particles limit and is stirred, until all diamond particles bodies are all broken up, and the surface is stained with one deck solder powder, and these particles are sneaked in the 300 purpose WC powder again, mix, put into graphite jig and compress, mould is put into vacuum oven, be evacuated down to and be not less than 2.0 * 10
-2Pa,, be heated to 905 ℃, be incubated 2 minutes, naturally cool to then below 50 ℃, to come out of the stove, the diamond particles that sieves out is the diamond particles finished product that there is the double-layer metallization layer on the surface, and the thickness of this metal layer can reach 0.2mm.
Embodiment 4:
Diamond surface metallization method of the present invention; be that 50 orders-60 purpose man-made diamond granule is cleaned up with acetone; put into glass dish; splash into cellulose aqueous solution; behind the thorough mixing; being poured in the 250 purpose Ag68Cu28Ti powder limit breaks up the diamond particles limit and stirs; until all diamond particles bodies are all broken up; and the surface is stained with one deck solder powder; these particles are sneaked in the 300 purpose WC powder, mix, put into graphite jig and compress; mould is put into vacuum oven, be evacuated down to and be not less than 2.0 * 10
-2Pa,, be heated to 840 ℃, be incubated 2 minutes, naturally cool to then below 50 ℃, to come out of the stove, the diamond particles that sieves out is the diamond particles finished product that there is the double-layer metallization layer on the surface, and the thickness of this metal layer can reach 0.15mm.
Claims (3)
1. diamond surface metallization method, it is characterized in that: will clean clean diamond particles surface-coated one deck organic bonding agent, then with the solder thorough mixing, sieve out the diamond particles that is stained with solder, it is distributed on ceramic plate or the plate mica, place vacuum or inert atmosphere to be heated to the solder temperature of fusion, can form the solder alloy layer on the diamond particles surface.
2. diamond surface metallization method according to claim 1, it is characterized in that: will clean clean diamond particles surface and apply the agent of one deck organic bonding, then with the solder thorough mixing, sieve out the diamond particles that is stained with solder, it is distributed in the powder of other metal or alloy, be placed into after compressing and be heated to the solder temperature of fusion in vacuum or the inert atmosphere, can form solder alloy layer and metal alloy layer successively on the diamond particles surface.
3. diamond surface metallization method according to claim 1 and 2 is characterized in that: described solder is the powdered alloy that contains Ti element or Cr element, and granularity is 200 orders with carefully.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102487812A CN102286742A (en) | 2011-08-27 | 2011-08-27 | Method for metallizing diamond surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011102487812A CN102286742A (en) | 2011-08-27 | 2011-08-27 | Method for metallizing diamond surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102286742A true CN102286742A (en) | 2011-12-21 |
Family
ID=45333490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011102487812A Pending CN102286742A (en) | 2011-08-27 | 2011-08-27 | Method for metallizing diamond surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102286742A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103834943A (en) * | 2013-12-30 | 2014-06-04 | 北京市粉末冶金研究所有限责任公司 | Method for cladding weldable alloy on surface of diamond polycrystal |
| CN104096938A (en) * | 2014-06-23 | 2014-10-15 | 南京航空航天大学 | Brazing method-based diamond surface activation technology |
| CN105618499A (en) * | 2016-03-25 | 2016-06-01 | 河南四方达超硬材料股份有限公司 | Manufacturing method of high-strength and high-wear-resistance polycrystalline diamond wire drawing mold blank |
| CN109454228A (en) * | 2018-11-02 | 2019-03-12 | 江苏锋泰工具有限公司 | A kind of diamond of coating functions gradient coating |
| CN109913696A (en) * | 2019-04-30 | 2019-06-21 | 华侨大学 | A kind of method of graphite surface metallization |
| CN112457821A (en) * | 2020-12-09 | 2021-03-09 | 中国科学院深圳先进技术研究院 | Heat-conducting gel containing diamond and liquid metal and preparation and application thereof |
| CN114273660A (en) * | 2021-12-24 | 2022-04-05 | 苏州科技大学 | Method for manufacturing node block by ultrasonic-assisted Ti foil diamond metallization |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4776862A (en) * | 1987-12-08 | 1988-10-11 | Wiand Ronald C | Brazing of diamond |
| CN101012547A (en) * | 2006-12-30 | 2007-08-08 | 江苏天一超细金属粉末有限公司 | Method and equipment for plating wolfram, chromium and molybdenum on diamond and cubic boron nitride particle surface |
-
2011
- 2011-08-27 CN CN2011102487812A patent/CN102286742A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4776862A (en) * | 1987-12-08 | 1988-10-11 | Wiand Ronald C | Brazing of diamond |
| CN101012547A (en) * | 2006-12-30 | 2007-08-08 | 江苏天一超细金属粉末有限公司 | Method and equipment for plating wolfram, chromium and molybdenum on diamond and cubic boron nitride particle surface |
Non-Patent Citations (3)
| Title |
|---|
| 《焊接技术》 20100131 裴夤崟 等 钎焊法金刚石表面金属化 第39卷, 第1期 * |
| 裴夤崟 等: "钎焊法金刚石表面金属化", 《焊接技术》 * |
| 黄本生 等: "复合镀金刚石及其在钢齿牙轮钻头齿面强化的应用", 《金刚石与磨料磨具工程》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103834943A (en) * | 2013-12-30 | 2014-06-04 | 北京市粉末冶金研究所有限责任公司 | Method for cladding weldable alloy on surface of diamond polycrystal |
| CN104096938A (en) * | 2014-06-23 | 2014-10-15 | 南京航空航天大学 | Brazing method-based diamond surface activation technology |
| CN105618499A (en) * | 2016-03-25 | 2016-06-01 | 河南四方达超硬材料股份有限公司 | Manufacturing method of high-strength and high-wear-resistance polycrystalline diamond wire drawing mold blank |
| CN109454228A (en) * | 2018-11-02 | 2019-03-12 | 江苏锋泰工具有限公司 | A kind of diamond of coating functions gradient coating |
| CN109913696A (en) * | 2019-04-30 | 2019-06-21 | 华侨大学 | A kind of method of graphite surface metallization |
| CN112457821A (en) * | 2020-12-09 | 2021-03-09 | 中国科学院深圳先进技术研究院 | Heat-conducting gel containing diamond and liquid metal and preparation and application thereof |
| CN114273660A (en) * | 2021-12-24 | 2022-04-05 | 苏州科技大学 | Method for manufacturing node block by ultrasonic-assisted Ti foil diamond metallization |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102286742A (en) | Method for metallizing diamond surface | |
| US5783316A (en) | Composite material having high thermal conductivity and process for fabricating same | |
| TW200844243A (en) | Target formed of sintering-resistant material of high-melting point metal alloy, high-melting point metal silicide, high-melting point metal carbide, high-melting point metal nitride, or high-melting point metal boride, process for producing the target | |
| CN105618883A (en) | Manufacturing method for vacuum-brazed monolayer cBN (cubic Boron Nitride) grinding wheel | |
| CN105499729A (en) | Vacuum brazing method of polycrystalline cubic boron nitride | |
| Gu et al. | Preparation of Ti-coated diamond particles by microwave heating | |
| CN102409300B (en) | Oxide ceramic sputtering target and preparation method thereof and used brazing alloy | |
| CN102409299A (en) | Oxide ceramic sputtering target, preparation method thereof and brazing alloy for oxide ceramic sputtering target | |
| WO2014033188A1 (en) | Method for making tools and constructions for tools | |
| WO2004074541A1 (en) | A method of manufacturing a sputter target | |
| CN109454228A (en) | A kind of diamond of coating functions gradient coating | |
| WO2004001092A1 (en) | AlRu SPATTERING TARGET AND METHOD FOR PREPARATION THEREOF | |
| CN104707996B (en) | A kind of diamond complex and Ways of Metallizing Cladding onto Diamond Surface | |
| US20080131724A1 (en) | Ceramic armor, methods of joining a carbide with a metal-comprising piece, and methods of metallizing carbide-comprising surfaces | |
| EP1440045B1 (en) | Metallization and/or brazing method, using a silicon alloy, for oxide ceramic parts which are non-wettable by said alloy | |
| PL199272B1 (en) | Method for producing an evaporation source | |
| JPH06346232A (en) | Target for sputtering and its production | |
| KR20060037255A (en) | Target/backing plate constructions, and methods of forming target/backing plate constructions | |
| US11761063B2 (en) | Method for preparing high-entropy alloy composites reinforced by diamond particles | |
| CN111254394B (en) | Surface metallization diamond composite particle | |
| CN102531603A (en) | Matrix powder system and composite materials and articles made therefrom | |
| CN106031956A (en) | Welding process of cubic boron nitride soldering materials | |
| JP4903566B2 (en) | Boron coated abrasive | |
| CN109628884B (en) | Surface metallization process of diamond | |
| CN107385439A (en) | A kind of Cu Ag Ti diamond brazing coating and its preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20111221 |