JPH02275376A - Burn in method - Google Patents
Burn in methodInfo
- Publication number
- JPH02275376A JPH02275376A JP1097775A JP9777589A JPH02275376A JP H02275376 A JPH02275376 A JP H02275376A JP 1097775 A JP1097775 A JP 1097775A JP 9777589 A JP9777589 A JP 9777589A JP H02275376 A JPH02275376 A JP H02275376A
- Authority
- JP
- Japan
- Prior art keywords
- burn
- socket
- tape
- film carrier
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 4
- 238000004804 winding Methods 0.000 abstract 1
- 229920001721 polyimide Polymers 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明はフィルムキャリアに搭載された半導体集積回路
素子（以下ＩＣチップと呼ぶ）に対するバーンイン方法
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a burn-in method for semiconductor integrated circuit elements (hereinafter referred to as IC chips) mounted on a film carrier.
［従来の技術］
従来のフィルムキャリアに搭載されたＩＣチップに対す
るバーンイン方法は、第２図に示すように、１のフィル
ムキャリアテープを直線状に並んだＩＣンケット５では
さみ込み、フィルムキャリア上の工Ｏチップ３から引き
出されたアウターリード４に、工ａノケット５の接触端
子６が接触するようにし、このソケットを介して駆動信
号を１０チツプ５に与え、この状態にて恒温％ｉ内に配
置して高温を加えるという方法であった。[Prior Art] As shown in FIG. 2, the conventional burn-in method for IC chips mounted on a film carrier involves sandwiching a film carrier tape 1 between IC packets 5 arranged in a straight line. The contact terminal 6 of the socket 5 is brought into contact with the outer lead 4 pulled out from the chip 3, and a drive signal is applied to the chip 5 through this socket, and in this state the temperature is kept within constant temperature %i. The method was to place it in place and apply high temperatures.
［発明が解決しようとする課題］
しかし、前述の従来技術では、ＩＣソケットを直線状に
配置していることから、恒温槽のサイズ上の制約により
、ＩＣソケットを何列にも分割せざるを得ないため、テ
ープ状に連続しているフィルムキャリアを、−旦短尺状
に切り離す必要性が生じてしまい後工程のアウターリー
ドボンディング時には、再びテープ状につなぎ直して使
用したり、あるいはＩＣチップ学品に打ち抜いた１個１
個の状態にて扱わざるを得ないなど、非常に効率が悪く
多（の工数がかかるという問題点を有している。[Problems to be Solved by the Invention] However, in the above-mentioned conventional technology, since the IC sockets are arranged in a straight line, it is necessary to divide the IC sockets into several rows due to size constraints of the thermostatic chamber. Therefore, it is necessary to cut the continuous tape-like film carrier into short lengths, and during the outer lead bonding process in the later process, it is necessary to reconnect the film carrier into a tape-like shape, or to use IC chip technology. 1 piece punched into pieces 1
This has the problem of being extremely inefficient and requiring a large number of man-hours, as it has to be handled individually.
そこで本発明はこのような問題点を解決するものであり
、その目的とするところは、フィルムキャリアに搭載さ
れたＩＣチップに対する）；−ンイン工程を１テープ状
で連続した状態のままで実施できる方法を提供するとこ
ろにある。Therefore, the present invention is intended to solve these problems, and its purpose is to make it possible to carry out the in-in process for IC chips mounted on a film carrier in a continuous state in the form of one tape. It's about providing a method.
［課題を解決するための手段］
本発明のバーンイン方法は、フィルムキャリアに搭載さ
れた半導体集積回路素子に対するノ（−ンイン工程にお
いて、装置として、恒温槽内に円筒状の支持体を設け、
その表面に駆動信号入力用の回路基板を巻き付け、その
回路基板上に螺線状にＩＣソケットを配置した構成のも
のを使用し、そのＩＣンケットに、フィルムキャリアに
搭載した半導体集積回路素子をセットしつつ、テープ状
で連続的に円筒状の支持体に螺線状に巻き付けた状態と
し、この状態にて半導体集積回路素子個々にＩＣノケノ
トを介して駆動信号を人力させ、かつ恒温槽内を高温に
保つことによりバーンインを行なうことを特徴とする。[Means for Solving the Problems] The burn-in method of the present invention includes providing a cylindrical support in a thermostatic oven as an apparatus in the burn-in process for semiconductor integrated circuit elements mounted on a film carrier,
A circuit board for drive signal input is wrapped around the surface of the IC socket, and an IC socket is arranged in a spiral pattern on the circuit board.The semiconductor integrated circuit element mounted on the film carrier is set in the IC socket. At the same time, the tape was continuously wound spirally around a cylindrical support, and in this state, a drive signal was manually applied to each semiconductor integrated circuit element via an IC node, and the inside of a constant temperature oven was heated. It is characterized by burn-in by keeping it at a high temperature.
［作用］
本発明の上記の構成によれば、フィルムキャリアテープ
の長手方向に沿って数十個にも及ぶＩＣソケットを切れ
目なく連続的にかつ空間的に非常にコンパクトに配置す
ることが可能となることから、フィルムキャリアテープ
を短尺状に切ることなく、通常の恒温槽サイズの巾にセ
ットすることが出来るようになる。[Function] According to the above configuration of the present invention, it is possible to arrange dozens of IC sockets along the longitudinal direction of the film carrier tape continuously without any breaks and spatially very compactly. Therefore, the film carrier tape can be set to the width of a normal thermostatic oven without cutting it into short pieces.
［実施例］
第１図は本発明の°実施例における斜視図であって、装
置の恒温槽内部の構造を示して〜・る。７は円筒状の支
持体であり、金属製で、寸法的には直径約１５ ｍ 、
高さ約２．０ｍであり、その表面は、８で示す回路基板
で覆われている。この基板８は可と５性を有したポリイ
ミド製の両面基板であり、駆動回路の信号を５のＩＯソ
ケットに伝えるだめのものである。ＩＣソケット５は、
基板８の表面に螺線状に配置されており、基板８に約２
，５００個が半田により接合されている。ＩＣソケット
の大きさは４．５ｃｒｎｘ２．０ｃｒｎＸ１．５ｃｒｎ
であり、金属リードをプラスチックで固定支持した構造
となっている。１はフィルムキャリアテープであり、幅
方向両端に送り用のパーフォレーション穴２を有し、３
で示すＩＣチップが搭載されている。フィルムキャリア
テープ１は幅５５ ｍｍ ％厚さ７５μｍのポリイミド
上に、厚さ５５μｍの銅ノぐターンが引き回された片面
基板である。ノく−フィン時にはこのフィルムキャリア
テープ１は、綿線上に配置された工Ｏソケット、５に合
わせて支持体７に巻きつけられて使用される。この時、
ＩＣチップ３の１個１個それぞれが、ＩＣソケット５の
１個１個に対応してセットされ、ＩＣソケット５を介し
て駆動信号がＩＣチップ５に入力され、恒温槽機能によ
り通常１２５℃に加熱されたまま成行されることにより
、バーンイン工程が実施できる。１回の処理量としては
、フィルムキャリアテープの連続１リ一ル分約２．５０
０ＩＣが可能である。[Embodiment] FIG. 1 is a perspective view of an embodiment of the present invention, showing the internal structure of a thermostatic chamber of the apparatus. 7 is a cylindrical support, made of metal, and approximately 15 m in diameter;
It has a height of about 2.0 m, and its surface is covered with a circuit board shown at 8. This board 8 is a double-sided board made of polyimide having a polyimide property, and is used to transmit signals from the drive circuit to the IO socket 5. The IC socket 5 is
They are arranged in a spiral shape on the surface of the substrate 8, and about 2
, 500 pieces are joined by solder. The size of the IC socket is 4.5crnx2.0crnx1.5crn
It has a structure in which metal leads are fixed and supported by plastic. 1 is a film carrier tape, which has perforation holes 2 for feeding at both ends in the width direction;
It is equipped with an IC chip shown in . The film carrier tape 1 is a single-sided substrate in which copper grooves having a thickness of 55 μm are routed on a polyimide film having a width of 55 mm and a thickness of 75 μm. When making a cross-fin, this film carrier tape 1 is used by being wound around a support 7 in alignment with the socket 5 arranged on a cotton wire. At this time,
Each IC chip 3 is set correspondingly to each IC socket 5, and a drive signal is input to the IC chip 5 through the IC socket 5, and the temperature is normally kept at 125°C using a constant temperature oven function. The burn-in process can be performed by performing the process while being heated. The amount processed at one time is approximately 2.50 liters for one continuous reel of film carrier tape.
0IC is possible.
［発明の効果コ
以上述べたように本発明によれば、工Ｏソケットを螺線
状に円筒支持体表面に配置したことにより、フィルムキ
ャリアテープな短尺状に切ること無（、連続テープ状で
バーンイン処理することが可能とな゛す、後工程におけ
る短尺テープつなぎ工程を削除することが出来、コスト
ダウンに寄与出来るという効果を有する。[Effects of the Invention] As described above, according to the present invention, by arranging the O-socket in a spiral shape on the surface of the cylindrical support, there is no need to cut the film carrier tape into short pieces. This has the effect of making it possible to perform burn-in processing and eliminating the process of connecting short tapes in the post-process, contributing to cost reduction.
第１図は本発明のバーンイン方法の一実施例を示す主要
斜視図。
・第２図は従来のバーンイン方法を示す主要斜視図。
１・・・・・・・・・フィルムキャリアテープ２・・・
・・・・・・バー７オレーシコン穴６・・・・・・・・
・ＩＣチップ
４゛°°゛°°°°°アウターリード
５・・・・・・・・・ＩＣソケット
６・・・・・・・・・接触端子
７・・・・・・・・・支持体
８・・・・・・・・・基 板FIG. 1 is a main perspective view showing an embodiment of the burn-in method of the present invention.・Figure 2 is a main perspective view showing the conventional burn-in method. 1...Film carrier tape 2...
・・・・・・Bar 7 Oreshicon hole 6・・・・・・・・・
・IC chip 4゛°°゛°°°°°Outer lead 5...IC socket 6...Contact terminal 7...Support Body 8...Substrate
Claims (1)
するバーンイン工程において、装置として、恒温槽内に
円筒状の支持体を設け、その表面に駆動信号入力用の回
路基板を巻き付け、その回路基板上に螺線状にＩＣソケ
ットを配置した構成のものを使用し、そのＩＣソケット
に、フィルムキャリアに搭載した半導体集積回路素子を
セットしつつ、テープ状で連続的に円筒状の支持体に螺
線状に巻き付けた状態とし、この状態にて半導体集積回
路素子個々にＩＣソケットを介して駆動信号を入力させ
、かつ恒温槽内を高温に保つことによりバーンインを行
なうことを特徴とするバーンイン方法。In the burn-in process for semiconductor integrated circuit elements mounted on a film carrier, a cylindrical support is installed in a constant temperature oven, a circuit board for drive signal input is wrapped around the surface of the support, and a spiral wire is placed on the circuit board. A device with an IC socket arranged in a shape is used, and a semiconductor integrated circuit element mounted on a film carrier is set in the IC socket, and the tape is continuously wound in a spiral around a cylindrical support. A burn-in method characterized by performing burn-in by inputting a drive signal to each semiconductor integrated circuit element through an IC socket in this state and maintaining a high temperature in a thermostatic oven.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1097775A JPH02275376A (en) | 1989-04-18 | 1989-04-18 | Burn in method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1097775A JPH02275376A (en) | 1989-04-18 | 1989-04-18 | Burn in method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02275376A true JPH02275376A (en) | 1990-11-09 |
Family
ID=14201214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1097775A Pending JPH02275376A (en) | 1989-04-18 | 1989-04-18 | Burn in method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02275376A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6707160B2 (en) * | 2000-06-05 | 2004-03-16 | Kabushiki Kaisha Toshiba | Semiconductor device using substrate having cubic structure and method of manufacturing the same |
| JP2009180541A (en) * | 2008-01-29 | 2009-08-13 | Nec Electronics Corp | Test board used for reliability test, and reliability test method |
-
1989
- 1989-04-18 JP JP1097775A patent/JPH02275376A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6707160B2 (en) * | 2000-06-05 | 2004-03-16 | Kabushiki Kaisha Toshiba | Semiconductor device using substrate having cubic structure and method of manufacturing the same |
| JP2009180541A (en) * | 2008-01-29 | 2009-08-13 | Nec Electronics Corp | Test board used for reliability test, and reliability test method |
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