JPH02273953A - Method of bonding semiconductor element to tab tape - Google Patents

Method of bonding semiconductor element to tab tape

Info

Publication number
JPH02273953A
JPH02273953A JP1096948A JP9694889A JPH02273953A JP H02273953 A JPH02273953 A JP H02273953A JP 1096948 A JP1096948 A JP 1096948A JP 9694889 A JP9694889 A JP 9694889A JP H02273953 A JPH02273953 A JP H02273953A
Authority
JP
Japan
Prior art keywords
bonding
inner lead
tab tape
inner leads
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1096948A
Other languages
Japanese (ja)
Other versions
JP2525243B2 (en
Inventor
Nobuhito Yamazaki
山崎 信人
Akihiro Nishimura
明浩 西村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinkawa Ltd
Original Assignee
Shinkawa Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Ltd filed Critical Shinkawa Ltd
Priority to JP1096948A priority Critical patent/JP2525243B2/en
Priority to KR1019900005362A priority patent/KR930003140B1/en
Publication of JPH02273953A publication Critical patent/JPH02273953A/en
Priority to US07/900,524 priority patent/US5223063A/en
Application granted granted Critical
Publication of JP2525243B2 publication Critical patent/JP2525243B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/79Apparatus for Tape Automated Bonding [TAB]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/86Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To unnecessitate the rotating of a bonding head, and improve productivity by a method wherein inner leads are bonded to an electrode by setting the direction of ultrasonic wave vibration applied to a bonding tool in the range of 30-60 deg. with respect to the direction along which a tab tape flows. CONSTITUTION:By setting the direction of ultrasonic wave vibration applied to a bonding tool 4 in the range of 30-60 deg. with respect to the direction along which a tab tape moves, inner leads 2a-2d are bonded to an electrode 30. That is, from the direction in the range of 30-60 deg. with respect to all of the inner leads 2a-2d which are perpendicularly led out from four sides inside an aperture part of the tab tape 1, the ultrasonic wave vibration is applied to the bonding tool 4 and bonding is performed, so that the inner leads 2a-2d can be bonded to the electrode 3a without rotating the bonding head. Thereby productivity can be improved, and the bonding head part can be simplified.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はタブテープに設けられたインナーリードを半導
体素子の電極にボンディングツールを用いて個別に接合
する方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for individually bonding inner leads provided on a tab tape to electrodes of a semiconductor element using a bonding tool.

[従来の技術] 第3図に示すように、タブテープlに設けられたインナ
ーリード2a、2b、2C12dは、般にタブテープl
の開口部内側のxY方向の4辺から直交して出ている。
[Prior Art] As shown in FIG. 3, the inner leads 2a, 2b, 2C12d provided on the tab tape l are generally
They come out perpendicularly from the four sides in the x and Y directions inside the opening.

このタブテープlのインナーリード2a〜2dを半導体
素子3の電極3aに個別にボンディングツール4に超音
波を印加して接合することが知られている。
It is known to individually bond the inner leads 2a to 2d of the tab tape 1 to the electrodes 3a of the semiconductor element 3 by applying ultrasonic waves to the bonding tool 4.

ところで、ボンディングツール4を保持したホーン5の
超音波振動方向は、ホーン5の軸心方向である。そこで
従来は、個々のインナーリード2a〜2dに対し均等な
超音波を印加するために、ホーン5の軸心方向をインナ
ーリード2a〜2dの出ている方向に合わせて回転させ
ている。このことを更に詳記すると次の通りである。
Incidentally, the direction of ultrasonic vibration of the horn 5 holding the bonding tool 4 is the axial direction of the horn 5. Conventionally, in order to apply uniform ultrasonic waves to the individual inner leads 2a to 2d, the axial direction of the horn 5 is rotated in accordance with the direction in which the inner leads 2a to 2d extend. This will be explained in more detail as follows.

まず、図示しない検出手段でインナーリード2a〜2d
と電極3aとの位置ずれが検出され、両者が位置合わせ
される。今、ホーン5の軸心方向がインナーリード2a
の左端のインナーリード2a−1の延在方向(Y方向)
と一致している場合より動作するとする。そこで、ボン
ディングツール4が下降してインナーリード2a−1を
電極3aに押圧すると共に、ホーン5に超音波振動が加
えられ、インナーリード2a−1と電極3aとが接合さ
れる0次にボンディングツール4は上昇及びX方向に移
動させられ、次のインナーリード2a−2の上方に位置
する。そして、前記と同様の動作によってインナーリー
ド2a−2と電極3aとが接合される。
First, a detection means (not shown) detects the inner leads 2a to 2d.
The positional deviation between the electrode 3a and the electrode 3a is detected, and the two are aligned. Now, the axial direction of the horn 5 is the inner lead 2a.
Extending direction of inner lead 2a-1 at the left end (Y direction)
It will work better if it matches. Then, the bonding tool 4 descends to press the inner lead 2a-1 to the electrode 3a, and at the same time ultrasonic vibration is applied to the horn 5, the zero-order bonding tool joins the inner lead 2a-1 and the electrode 3a. 4 is raised and moved in the X direction, and is located above the next inner lead 2a-2. Then, the inner lead 2a-2 and the electrode 3a are joined by the same operation as described above.

前記した動作を順次行ってインナーリード2aの全ての
接合が終了すると、ホーン5を保持した図示しないボン
ディングヘッドが90°回転させられ、ホーン5の軸心
方向がインナーリード2bの延在方向に一致させられる
。その後はインナーリード2aの場合と同様にインナー
リード2bの接合動作が行われる。
When all the inner leads 2a are bonded by performing the above-described operations in sequence, the bonding head (not shown) holding the horn 5 is rotated by 90 degrees, and the axial direction of the horn 5 is aligned with the extending direction of the inner lead 2b. I am made to do so. Thereafter, the bonding operation for the inner lead 2b is performed in the same manner as for the inner lead 2a.

インナーリード2bの接合が終了すると、次はインナー
リード2cの接合を行うために、ボンディングヘッドは
更に90°回転させられ、同様にインナーリード2Cの
接合が行われる。インナーリード2Cの接合が終了する
と、同様に再び900回転させられ、インナーリード2
dの接合が行われる。インナーリード2dの接合が終了
すると、ボンディングツール4をスタート位置に戻すた
めにボンディングヘッドは再度90°回転させられる。
After the bonding of the inner leads 2b is completed, the bonding head is further rotated by 90 degrees to bond the inner leads 2c, and the bonding of the inner leads 2C is performed in the same manner. After the inner lead 2C has been bonded, it is rotated 900 times again in the same way, and the inner lead 2C is rotated again in the same manner.
d joining is performed. When the bonding of the inner lead 2d is completed, the bonding head is rotated 90 degrees again to return the bonding tool 4 to the starting position.

このように、1つのデバイスに対し、90’づつ4回ポ
ンディングヘッドを回転させる必要がある。
Thus, it is necessary to rotate the pounding head four times by 90' for one device.

[発明が解決しようとする課題] 上記従来技術は、ボンディングヘッドを1つのデバイス
に対して4回回転させる必要があるので、無駄な時間が
多く、生産性に劣るという問題があった。またボンディ
ングヘッドを回転させる回転機構が必要であり、ボンデ
ィングヘッド部が複雑となり、装置が高価となる。
[Problems to be Solved by the Invention] The above-mentioned conventional technology has the problem that it is necessary to rotate the bonding head four times for one device, resulting in a lot of wasted time and poor productivity. Further, a rotation mechanism for rotating the bonding head is required, making the bonding head portion complicated and the device expensive.

本発明の目的は、生産性の向上が図れると共に、ボンデ
ィングヘッド部を簡単にできるタブテープへの半導体素
子接合方法を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a method for bonding a semiconductor element to a tab tape, which can improve productivity and simplify the bonding head section.

[課題を解決するための手段] 上記目的は、ボンディングツールに印加する超音波振動
の方向をタブテープが移動する方向に対して30〜60
e′の範囲としてインナーリードと電極とを接合するこ
とにより達成される。
[Means for solving the problem] The above object is to set the direction of ultrasonic vibration applied to the bonding tool to 30 to 60 degrees with respect to the direction in which the tab tape moves.
This is achieved by joining the inner lead and the electrode in the range e'.

[作用] タブテープの開口部内側の4辺から直交して出ている全
てのインナーリードに対して30〜600の範囲から超
音波振動をボンディングツールに印加して接合するので
、ボンディングツール、即ちボンディングヘッドを回転
させることなくインナーリードを電極に接合できるj [実施例J 以下、本発明の一実施例を第1図及び第2図により説明
する。なお、第3図と同じ又は相当部材には同一符号を
付し、その説明を省略する。第1図に示すように、ホー
ン5の軸心方向はタブテープ1の移動す置方向A(実施
例の場合はX方向)に対して45°になるように配置さ
れている。ホーン5を上下動可能に保持したボンディン
グヘッド6はXYテーブル7に搭載されている。
[Function] Since ultrasonic vibrations are applied to the bonding tool in the range of 30 to 600 to all the inner leads protruding perpendicularly from the four sides inside the opening of the tab tape to bond them, the bonding tool, i.e., the bonding Inner leads can be bonded to electrodes without rotating the head [Embodiment J] An embodiment of the present invention will be described below with reference to FIGS. 1 and 2. Note that the same or equivalent members as in FIG. 3 are given the same reference numerals, and their explanations will be omitted. As shown in FIG. 1, the axial direction of the horn 5 is arranged at an angle of 45° with respect to the moving direction A of the tab tape 1 (the X direction in the case of the embodiment). A bonding head 6 holding a horn 5 so as to be movable up and down is mounted on an XY table 7.

今、インナーリード2aのインナーリード2a−1より
接合動作を行うとする。まず、ボンディングツール4が
下降してインナーリード2a−1を電極3aに押圧する
と共に、ホーン5に超音波振動が加えられ、インナーリ
ード2a−1は電極3aに接合される。その後ボンディ
ングツール4は上昇及びX方向に移動させられ、インナ
ーリード2a−2の上方に位置させられる。そして、前
記と同様の動作によってインナーリード2a−2が電極
3aに接合される。
Now, it is assumed that the joining operation is performed from the inner lead 2a-1 of the inner lead 2a. First, the bonding tool 4 descends to press the inner lead 2a-1 against the electrode 3a, and ultrasonic vibration is applied to the horn 5, thereby bonding the inner lead 2a-1 to the electrode 3a. Thereafter, the bonding tool 4 is raised and moved in the X direction, and is positioned above the inner lead 2a-2. Then, the inner lead 2a-2 is joined to the electrode 3a by the same operation as described above.

前記した動作を順次行ってインナーリード2aの全ての
接合が終了すると、ボンディングヘッド6がxYX方向
駆動され、ボンディングツール4はインナーリード2b
のインナーリード2b−1の上方に位置される。その後
はインナーリード2aの場合と同様にインナーリード2
bへの接合動作が行われる。この場合、インナーリード
2b−1からインナーリード2b−2,2b−3・・・
への移動は、X方向のみに駆動される。
When all the inner leads 2a are bonded by performing the above-described operations in sequence, the bonding head 6 is driven in the xYX directions, and the bonding tool 4 is moved to the inner lead 2b.
is located above the inner lead 2b-1. After that, as in the case of inner lead 2a,
The joining operation to b is performed. In this case, from the inner lead 2b-1 to the inner leads 2b-2, 2b-3...
The movement to is driven only in the X direction.

インナーリード2bへの接合が終了すると、次はインナ
ーリード2cの右端のインナーリード2cm1の上方に
ボンディングツール4が位置するようにポンディングヘ
ッド6はxY力方向駆動され、以下、前記した場合と同
様の動作によってインナーリード2cへの接合動作が行
われる。インナーリード2cの接合が終了すると、イン
ナーリード2dの上端のインナーリード2d−1の上方
にボンディングツール4が位置するようにポンディング
ヘッド6はXY力方向駆動され、前記したと同様の動作
によってインナーリード2dへの接合動作が行われる。
When the bonding to the inner lead 2b is completed, the bonding head 6 is driven in the xY force direction so that the bonding tool 4 is positioned above the inner lead 2cm1 at the right end of the inner lead 2c. The joining operation to the inner lead 2c is performed by the operation. When the bonding of the inner lead 2c is completed, the bonding head 6 is driven in the XY force direction so that the bonding tool 4 is positioned above the inner lead 2d-1 at the upper end of the inner lead 2d, and A bonding operation to the lead 2d is performed.

インナーリード2dの接合が終了すると、ポンディング
ヘッド6はXY力方向駆動され、ボンディングツール4
はスタート位置に戻る。
When the bonding of the inner lead 2d is completed, the bonding head 6 is driven in the XY force direction, and the bonding tool 4
returns to the starting position.

このように、ホーン5の軸心方向はタブテープ1の移動
する方向Aに対して45°になるように配置されている
ので、ホーン5、即ちボンディングツール4はどのイン
ナーリード2a〜2dの延在方向に対しても同じ角度を
もって位置する。そして、前記のようにインナーリード
2a〜2dを電極3aに接合する場合、ボンディングツ
ール4に印加される超音波振動方向は、ホーン5の軸心
方向であり、この方向による超音波振動でボンディング
ツール4は往復運動するので、インナーリード2aと2
0については接合効果は変らない。
In this way, since the axial direction of the horn 5 is arranged at an angle of 45 degrees with respect to the moving direction A of the tab tape 1, the horn 5, that is, the bonding tool 4 It is also located at the same angle with respect to the direction. When bonding the inner leads 2a to 2d to the electrode 3a as described above, the direction of ultrasonic vibration applied to the bonding tool 4 is the axial direction of the horn 5, and the ultrasonic vibration in this direction causes the bonding tool to 4 reciprocates, so the inner leads 2a and 2
For 0, the bonding effect remains unchanged.

またインナーリード2bと2dについても同様である。The same applies to the inner leads 2b and 2d.

次にインナーリード2aと2bについて考察する。第2
図(a)はインナーリード2aの場合を示し、同図(b
)はインナーリード2bの場合を示す、インナーリード
2aでの超音波振動FaはFa=Fax+Fayに分解
でき、インナーリード2bでの超音波振動FbはFb=
Fbx+Fbyに分解することができる。FaとFbは
同じであるノテ、Fax=Fbx、Fay=Fbyとな
り、作用している成分はインナーリード2aと2bにつ
いても同じである。即ち、ホーン5を450に配置して
ボンディングツール4に超音波振動を印加することによ
り、ホーン5を回転させないで夫々のインナーリード2
a〜2dに均一な接合条件を与えることができる。
Next, consider the inner leads 2a and 2b. Second
Figure (a) shows the case of the inner lead 2a, and Figure (b) shows the case of the inner lead 2a.
) shows the case of the inner lead 2b.The ultrasonic vibration Fa in the inner lead 2a can be decomposed into Fa=Fax+Fay, and the ultrasonic vibration Fb in the inner lead 2b is Fb=
It can be decomposed into Fbx+Fby. Note that Fa and Fb are the same, Fax=Fbx, Fay=Fby, and the acting components are the same for inner leads 2a and 2b. That is, by arranging the horn 5 at 450 and applying ultrasonic vibration to the bonding tool 4, each inner lead 2 is heated without rotating the horn 5.
Uniform bonding conditions can be provided for a to 2d.

なお、上記実施例は本発明の最適な一実施例を示したも
のであり、実験の結果、試料によってはボンディングツ
ール4に印加する超音波振動の方向をタブテープ1の流
れる方向に対して30〜600での範囲であれば実用上
問題はなかった。
Note that the above-mentioned embodiment shows an optimal embodiment of the present invention, and as a result of experiments, the direction of the ultrasonic vibration applied to the bonding tool 4 is set at 30 to 30 degrees with respect to the flow direction of the tab tape 1 depending on the sample. There were no practical problems within the range of 600.

[発明の効果] 以上の説明から明らかなように、本発明によれば、ボン
ディングツールに印加する超音波振動の方向をタブテー
プが流れる方向に対して30〜600の範囲としてイン
ナーリードと電極とを接合するので、ポンディングヘッ
ドを回転させる必要がなく、生産性の向上が図れると共
に、ポンディングヘッド部を簡単にできる。
[Effects of the Invention] As is clear from the above description, according to the present invention, the direction of the ultrasonic vibration applied to the bonding tool is set in the range of 30 to 600 degrees with respect to the direction in which the tab tape flows, and the inner lead and the electrode are connected to each other. Since the bonding head is joined, there is no need to rotate the pounding head, which improves productivity and simplifies the bonding head section.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示す平面図、第2図(a)
(b)はインナーリードと超音波振動との関係を示す平
面説明図、第3図は従来の方法を示し、(a)は平面図
、(b)は正面図である。 l:タブテープ。 2a〜2d:インナーリード、 3:半導体素子。 3a:電極、 4:ボンディングツール、 5:ホーン。 第 図 :りブ°チー79 第3図 (b)
Fig. 1 is a plan view showing an embodiment of the present invention, Fig. 2(a)
(b) is an explanatory plan view showing the relationship between the inner lead and ultrasonic vibration, FIG. 3 shows a conventional method, (a) is a plan view, and (b) is a front view. l: Tab tape. 2a to 2d: inner lead, 3: semiconductor element. 3a: Electrode, 4: Bonding tool, 5: Horn. Figure: Ribuchi 79 Figure 3 (b)

Claims (1)

【特許請求の範囲】[Claims] (1)タブテープに設けられたインナーリードを半導体
素子の電極にボンディングツールを用いて個別に接合す
る方法において、前記ボンディングツールに印加する超
音波振動の方向を前記タブテープが移動する方向に対し
て30〜60゜の範囲としてインナーリードと電極とを
接合することを特徴とするタブテープへの半導体素子接
合方法。
(1) In a method of individually bonding inner leads provided on a tab tape to electrodes of a semiconductor element using a bonding tool, the direction of ultrasonic vibration applied to the bonding tool is 30 degrees with respect to the direction in which the tab tape moves. A method for bonding a semiconductor element to a tab tape, the method comprising bonding an inner lead and an electrode at an angle of 60 degrees.
JP1096948A 1989-04-17 1989-04-17 Method of joining semiconductor devices to tab tape Expired - Lifetime JP2525243B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP1096948A JP2525243B2 (en) 1989-04-17 1989-04-17 Method of joining semiconductor devices to tab tape
KR1019900005362A KR930003140B1 (en) 1989-04-17 1990-04-17 Semiconductor device bonding method on tab
US07/900,524 US5223063A (en) 1989-04-17 1992-06-17 Method for bonding semiconductor elements to a tab tape

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1096948A JP2525243B2 (en) 1989-04-17 1989-04-17 Method of joining semiconductor devices to tab tape

Publications (2)

Publication Number Publication Date
JPH02273953A true JPH02273953A (en) 1990-11-08
JP2525243B2 JP2525243B2 (en) 1996-08-14

Family

ID=14178524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1096948A Expired - Lifetime JP2525243B2 (en) 1989-04-17 1989-04-17 Method of joining semiconductor devices to tab tape

Country Status (2)

Country Link
JP (1) JP2525243B2 (en)
KR (1) KR930003140B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08124974A (en) * 1994-10-28 1996-05-17 Nec Corp Method and device for bonding semiconductor device
EP1209736A2 (en) * 2000-11-17 2002-05-29 Sony Corporation Semiconductor device and method of fabricating semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08124974A (en) * 1994-10-28 1996-05-17 Nec Corp Method and device for bonding semiconductor device
EP1209736A2 (en) * 2000-11-17 2002-05-29 Sony Corporation Semiconductor device and method of fabricating semiconductor device
EP1209736A3 (en) * 2000-11-17 2002-07-24 Sony Corporation Semiconductor device and method of fabricating semiconductor device

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KR900017134A (en) 1990-11-15
JP2525243B2 (en) 1996-08-14
KR930003140B1 (en) 1993-04-22

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