JPH02272721A - Manufacture of x-ray exposure mask - Google Patents
Manufacture of x-ray exposure maskInfo
- Publication number
- JPH02272721A JPH02272721A JP1092902A JP9290289A JPH02272721A JP H02272721 A JPH02272721 A JP H02272721A JP 1092902 A JP1092902 A JP 1092902A JP 9290289 A JP9290289 A JP 9290289A JP H02272721 A JPH02272721 A JP H02272721A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- ray
- heavy metal
- exposure mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 229910001385 heavy metal Inorganic materials 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000001312 dry etching Methods 0.000 claims abstract description 4
- 239000010409 thin film Substances 0.000 claims description 32
- 239000010408 film Substances 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 abstract description 6
- 239000009719 polyimide resin Substances 0.000 abstract description 5
- 230000001681 protective effect Effects 0.000 abstract description 4
- 229910052715 tantalum Inorganic materials 0.000 abstract description 2
- 229910052721 tungsten Inorganic materials 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は超微細パターンの高精度転写に用いられるＸ線
露光用マスクの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing an X-ray exposure mask used for highly accurate transfer of ultra-fine patterns.
［従来の技術］
従来、行われてきたＸ線露光マスクの製造方法は、３ｉ
単結晶基板の一表面上にＸ線透過性薄膜を堆積し、該３
ｉ単結晶基板の所望の領域を裏面よりエツチングして軟
Ｘ線を透過する露光領域を形成したのち、該Ｘ線透過性
薄膜の表面上に重金属膜を堆積し、この重金属膜上にレ
ジストを塗布して電子ビーム露光等の方法により該レジ
ストを任意の形状にパターン化したのら、このレジスト
パターンを保護膜にして前記重金属膜をエツチングする
ことによりＸ線露光マスクを製造するものである。[Prior art] The conventional method for manufacturing an X-ray exposure mask is 3i.
Depositing an X-ray transparent thin film on one surface of a single crystal substrate,
i After etching a desired region of the single crystal substrate from the back side to form an exposed region that transmits soft X-rays, a heavy metal film is deposited on the surface of the X-ray transparent thin film, and a resist is applied on the heavy metal film. After coating and patterning the resist into an arbitrary shape by a method such as electron beam exposure, an X-ray exposure mask is manufactured by etching the heavy metal film using the resist pattern as a protective film.
［発明が解決しようとする課題１
しかしながら上記の方法においては、高々１〜２μｓ程
度の厚みの極めて脆弱なＸ線透過性薄膜上に重金属ａ膜
の形成をはじめ、電子ビーム露光によるレジストパター
ン形成、ざらにはドライエツヂングによる重金属■のパ
ターニング等を行うため、該薄膜が各工程において破損
しやすく、その結処、Ｘ線露光マスクの歩留まりの低下
はもとより、破損片が電子ビーム露光装置やトライエツ
チング装置内の塵の原因になったり、おるいはまた電子
ビーム露光装置の精密ステージに付着して、位置決め精
度の低下の原因になったりした。[Problem to be Solved by the Invention 1] However, in the above method, the formation of a heavy metal a film on an extremely fragile X-ray transparent thin film with a thickness of about 1 to 2 μs at most, resist pattern formation by electron beam exposure, In addition, because heavy metal patterning is carried out by dry etching, the thin film is easily damaged in each process, which not only reduces the yield of X-ray exposure masks, but also damages the broken pieces in electron beam exposure equipment and trials. This may cause dust inside the etching device, or it may adhere to the precision stage of the electron beam exposure device, causing a decrease in positioning accuracy.
本発明は、以上述べたような従来の欠点を解消するため
になされたもので、Ｘ線透過性薄膜の破損が生じたりす
ることがなく、Ｘ線露光マスクを歩留まり良く、容易に
製造することのできるＸ線露光マスクの製造方法を提供
することを目的とする。The present invention has been made in order to eliminate the conventional drawbacks as described above, and it is possible to easily manufacture an X-ray exposure mask with high yield without causing damage to the X-ray transparent thin film. It is an object of the present invention to provide a method for manufacturing an X-ray exposure mask that allows the following.
［課題を解決するための手段］
本発明は、表面にＸ線透過性薄膜が形成された３ｉ基板
の所定の領域を裏面よりエツチングして前記Ｘ線透過性
薄膜の裏面を露出せしめる工程と、露呈したＸ線透過性
薄膜裏面に厚膜導電性有機膜を堆積して硬化せしめる工
程と、前記Ｘ線透過性薄膜の表面上に重金属薄膜および
所定形状にパターン化されたレジスト膜を順次形成する
工程と、該レジストパターンをマスクとして前記重金属
薄膜をドライエツチング法によりパターニングする工程
と、前記厚膜導電性有機膜およびパターン化されたレジ
スト膜を除去する工程とからなることを特徴とするＸ線
露光マスクの製造方法である。[Means for Solving the Problems] The present invention includes the steps of: etching a predetermined region of a 3i substrate on which an X-ray transparent thin film is formed from the back surface to expose the back surface of the X-ray transparent thin film; A step of depositing and curing a thick conductive organic film on the exposed rear surface of the X-ray transparent thin film, and sequentially forming a heavy metal thin film and a resist film patterned in a predetermined shape on the surface of the X-ray transparent thin film. a step of patterning the heavy metal thin film by dry etching using the resist pattern as a mask; and a step of removing the thick conductive organic film and the patterned resist film. This is a method for manufacturing an exposure mask.
本発明の主旨とするところは、Ｘ線透過性薄膜基板を形
成した後、厚膜導電性有機膜を前記Ｘ線透過性薄膜の裏
面に固着させ、補強した状態で、重金属薄膜の堆積、電
子ビーム露光によるレジストパターン形成および該重金
属薄摸層のドライエツチングを行い、最後にこの厚膜導
電性有機膜苦を除去するものである。従って、ここで用
いられる導電性有機膜は、Ｘ線透過性膜の裏打らとして
用いられ、るものなので、Ｘ線透過性膜に対する接着性
並びに熱伝導性に優れ、かつ応力の極めて小さい高分子
樹脂であることが望ましい。このような高分子樹脂とし
ては、例えばポリイミド樹脂が挙げられる。The gist of the present invention is that after forming an X-ray transparent thin film substrate, a thick conductive organic film is fixed to the back surface of the X-ray transparent thin film, and in a reinforced state, a heavy metal thin film is deposited, A resist pattern is formed by beam exposure, the heavy metal thin layer is dry etched, and finally the thick conductive organic film is removed. Therefore, since the conductive organic film used here is used as a backing for the X-ray transparent film, it is made of a polymer that has excellent adhesion to the X-ray transparent film and thermal conductivity, and has extremely low stress. Preferably, it is a resin. Examples of such polymer resins include polyimide resins.
［作用］
厚膜導電性有機膜をＸ線透過性簿膜の裏打ちとして用い
ることにより、該Ｘ線透過性薄膜の破損か防止される。[Function] By using a thick conductive organic film as a backing for an X-ray transparent thin film, damage to the X-ray transparent thin film is prevented.
このため、Ｘ線露光マスクの歩留まりが大幅に向−ヒす
るとともに、電子ビーム露光装置の損傷やトライエツチ
ング装置の汚れを防ぐことかできる。Therefore, the yield of X-ray exposure masks is greatly improved, and damage to the electron beam exposure device and staining of the tri-etching device can be prevented.
［実施例１
以下、本発明の実施例について、図面を参照して詳細に
説明する。[Embodiment 1] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
第１図は本発明の一実施例を工程順に示す断面図である
。FIG. 1 is a sectional view showing an embodiment of the present invention in the order of steps.
（１００）Ｓ ｉ単結晶塞板１１の両面に、例えばＳＩ
Ｃ摸もしくはＳ！３Ｎ４膜等のＸ線透過性薄膜１２を、
例えば減圧ＣＶＤ法もしくはＥＣＲプラズマＣＶＤ法等
の方法により堆積する（第１図（ａ））。次いで通常の
フォトリソグラフィ技術を用いて３ｉ単拮晶基板１１の
裏面のＸ線透過性ａ膜１２の所定の領域をエツチングし
、窓枠状のパターン１２ａを形成する（第１図（ｂ））
。さらに、３ｉ単結晶基板１１を、例えば加熱したＫＯ
Ｈ水溶液に浸し、窓枠状の薄膜パターン１２ａを保護膜
にして３ｉ単結晶基板１１の所定の領域をエツチングし
、他方のＸ線透過性薄膜１２の裏面を露出せしめた後、
露呈したＸ線透過性薄膜１２の裏面に、例えばポリイミ
ド、樹脂１３をスピン塗布し、加熱硬化せしめる（第１
図（Ｃ））。(100)Si For example, on both sides of the Si single crystal blocking plate 11,
C or S! An X-ray transparent thin film 12 such as a 3N4 film,
For example, it is deposited by a method such as a low pressure CVD method or an ECR plasma CVD method (FIG. 1(a)). Next, a predetermined region of the X-ray transparent a film 12 on the back surface of the 3i monoantagonistic substrate 11 is etched using a normal photolithography technique to form a window frame-shaped pattern 12a (FIG. 1(b)).
. Further, the 3i single crystal substrate 11 is heated, for example, with KO.
After soaking in H aqueous solution and etching a predetermined region of the 3i single crystal substrate 11 using the window frame-shaped thin film pattern 12a as a protective film to expose the back surface of the other X-ray transparent thin film 12,
For example, polyimide or a resin 13 is spin-coated on the back surface of the exposed X-ray transparent thin film 12 and cured by heating (the first
Figure (C)).
次に、Ｘ線透過性薄膜１２の表面上にＷもしくはＴａ等
の単金属薄膜１４をスパッタリング法もしくはイオンヒ
ーム蒸看法等により堆積し、この重金属簿膜１４上にレ
ジストを塗布して電子ビーム露光技術等の方法により任
意のレジストパターン１５を形成する（第１図（ｄ））
。しかる後、該レジストパターン１５を保護膜にして反
応性イオンエツチング法により単金属薄膜１４を選択的
にエツチングし、前記レジストパターンと相似の重金属
パターン１４ａを形成する。Next, a single metal thin film 14 such as W or Ta is deposited on the surface of the X-ray transparent thin film 12 by a sputtering method or an ion beam evaporation method, and a resist is applied onto this heavy metal film 14 using an electron beam exposure technique. An arbitrary resist pattern 15 is formed by a method such as (FIG. 1(d)).
. Thereafter, the single metal thin film 14 is selectively etched by reactive ion etching using the resist pattern 15 as a protective film to form a heavy metal pattern 14a similar to the resist pattern.
最後に重金属パターン１４ａ上に残るレジストと該Ｘ線
透過性薄膜に裏打らしたポリイミド樹脂１３を抱水ヒド
ラジンを用いてエツチングすると、第１図（ｅ）に示す
ような所望のＸ線露光マスクか得られる。Finally, when the resist remaining on the heavy metal pattern 14a and the polyimide resin 13 lined with the X-ray transparent thin film are etched using hydrazine hydrate, a desired X-ray exposure mask as shown in FIG. 1(e) is formed. can get.
［発明の効果］
以上説明したように、本発明のＸ線露光マスクの製造方
法によれば、Ｘ線透過性薄膜基板かきわめて容易に形成
でき、かつ従来方法に比へてＸ線露光マスクの歩留まり
が大幅に向上する。[Effects of the Invention] As explained above, according to the method of manufacturing an X-ray exposure mask of the present invention, an X-ray transparent thin film substrate can be formed extremely easily, and the manufacturing method of an X-ray exposure mask can be made more easily than the conventional method. Yield is significantly improved.
第１図は本発明のＸ線露光マスクの製造方法の一実施例
を工程順に示す断面図で必る。
１１・・・３ｉ単結晶基板
１２・・・Ｘ線透過性薄膜
１３・・・ポリイミド樹脂
１４・・・重金属薄膜
１４ａ・・・重金属パターン
１５・・・レジストパターンFIG. 1 is a sectional view showing an embodiment of the method for manufacturing an X-ray exposure mask according to the present invention in the order of steps. 11...3i single crystal substrate 12...X-ray transparent thin film 13...polyimide resin 14...heavy metal thin film 14a...heavy metal pattern 15...resist pattern
Claims (1)
定の領域を裏面よりエッチングして前記Ｘ線透過性薄膜
の裏面を露出せしめる工程と、露呈したＸ線透過性薄膜
裏面に厚膜導電性有機膜を堆積して硬化せしめる工程と
、前記Ｘ線透過性薄膜の表面上に重金属薄膜および所定
形状にパターン化されたレジスト膜を順次形成する工程
と、該レジストパターンをマスクとして前記重金属薄膜
をドライエッチング法によりパターニングする工程と、
前記厚膜導電性有機膜およびパターン化されたレジスト
膜を除去する工程とからなることを特徴とするＸ線露光
マスクの製造方法。(1) A step of etching a predetermined region of the Si substrate on which an X-ray transparent thin film is formed from the back surface to expose the back surface of the X-ray transparent thin film, and A step of depositing and curing a conductive organic film, a step of sequentially forming a heavy metal thin film and a resist film patterned in a predetermined shape on the surface of the X-ray transparent thin film, and using the resist pattern as a mask, A process of patterning a heavy metal thin film using a dry etching method,
A method for manufacturing an X-ray exposure mask, comprising the step of removing the thick conductive organic film and the patterned resist film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9290289A JPH0770465B2 (en) | 1989-04-14 | 1989-04-14 | Method of manufacturing X-ray exposure mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9290289A JPH0770465B2 (en) | 1989-04-14 | 1989-04-14 | Method of manufacturing X-ray exposure mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02272721A true JPH02272721A (en) | 1990-11-07 |
| JPH0770465B2 JPH0770465B2 (en) | 1995-07-31 |
Family
ID=14067406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9290289A Expired - Lifetime JPH0770465B2 (en) | 1989-04-14 | 1989-04-14 | Method of manufacturing X-ray exposure mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0770465B2 (en) |
-
1989
- 1989-04-14 JP JP9290289A patent/JPH0770465B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0770465B2 (en) | 1995-07-31 |
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